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Microchip Technology JANTX1N6163US/TR
- Part No.:
- JANTX1N6163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6163US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,092
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Product details
Overview
JANTX1N6163US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTX reliability level. It provides 56.0 V working peak standoff voltage (VWM), 71.3 V minimum breakdown voltage (V(BR)) at 20 mA, 103.1 V clamping voltage (VC) at 14.5 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JANTX1N6163US/TR datasheet, JANTX1N6163US/TR pinout, JANTX1N6163US/TR application, or JANTX1N6163US/TR equivalent, key selection criteria include military-grade surge robustness, bidirectional clamping symmetry, hard-glass package integrity, Category 1 metallurgical bond reliability, and IEC61000-4-2/4-4/4-5 compliance for high-reliability ESD/EFT/lightning secondary effects mitigation.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its voidless hermetic glass construction and tungsten slug terminations ensure stable thermal resistance (RθJEC = 5.0 °C/W) and immunity to moisture ingress under extended temperature cycling (-55 to +175 °C).
The device delivers 1500 W peak pulse power at 25 °C for standardized 10/1000 µs transients while maintaining <5 µA standby current at VWM. Its 0.100 %/°C temperature coefficient of V(BR) ensures predictable clamping behavior across operational junction temperatures, critical for precision rail protection in aerospace systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 56.0 V - Maximum continuous reverse/forward voltage before conduction begins; defines safe operating margin below system rail voltage. |
| V(BR) min | 71.3 V @ 20 mA - Minimum voltage at which avalanche breakdown initiates; sets lower bound for clamping onset threshold. |
| VC @ IPP | 103.1 V @ 14.5 A - Clamped voltage during 10/1000 µs surge; determines maximum transient overvoltage seen by protected ICs. |
| PPP | 1500 W - Peak impulse power handling capability; enables suppression of high-energy lightning-induced surges per IEC61000-4-5. |
| ID @ VWM | <5 µA - Leakage current at rated standoff voltage; ensures negligible power loss and signal integrity in standby operation. |
| TJ Range | -55 to +175 °C - Full military temperature range; supports operation in engine bay, radar, and space-qualified electronics. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct heat sinking to PCB copper or chassis for sustained pulse duty cycles. |
Pinout & Package
Package: SQ-MELF (C-package variant), hermetically sealed voidless hard glass with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm). No polarity marking; bidirectional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Identical electrical behavior in either orientation; eliminates layout polarity constraints and simplifies board routing. |
| End Cap (both ends) | Thermal and mechanical interface | Direct thermal path to PCB copper or heatsink; tungsten slugs provide low-resistance conduction and mechanical stability. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid, high-vibration environments. |
| Category 1 metallurgical bonds | Guarantees interfacial integrity under thermal shock (-55/+175 °C cycling) and mechanical stress per MIL-STD-750. |
| Triple-layer passivation | Reduces surface leakage and enhances long-term stability of V(BR) and VC under high-humidity bias conditions. |
| MIL-PRF-19500/516 qualification | Validated test sequence includes burn-in, temperature cycling, hermeticity, and surge endurance - required for DoD procurement. |
| IEC61000-4-2/4-4/4-5 compliance | Meets Level 4 ESD (±15 kV air/±8 kV contact), EFT (±4 kV), and lightning surge (1 kV line-earth, 2 kV line-line) immunity thresholds. |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 28 V DC primary bus against load dump and lightning-induced transients in flight control computers. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly across bus rails to limit overvoltage to ≤103.1 V during 1500 W surges. Use Value: Prevents latch-up or permanent damage to downstream DC-DC converters and FPGAs without adding series impedance or signal delay. |
Use Scenario: Shielding analog sensor inputs (e.g., pressure, temperature) from ESD events during maintenance or environmental exposure. IC Role / Device Role / Timing Role: Low-leakage (<5 µA) standoff device that remains transparent during normal operation but clamps sub-100 ns ESD pulses. Use Value: Maintains signal fidelity in 16-bit ADC front-ends while surviving ±15 kV IEC61000-4-2 contact discharge without parameter drift. |
| Military Vehicle Electronics | Satellite Power Management |
Use Scenario: Guarding CAN bus transceivers and microcontrollers against ISO 7637-2 pulse 5a/b surges in armored vehicle ECUs. IC Role / Device Role / Timing Role: High-surge-capacity TVS mounted at connector entry point to shunt energy before it reaches signal conditioning circuitry. Use Value: Withstands repeated 1500 W transients without degradation, enabling >100,000 surge cycles in field-deployed systems. |
Use Scenario: Safeguarding solar array regulator inputs against single-event transients (SET) and secondary lightning coupling in LEO orbit. IC Role / Device Role / Timing Role: Radiation-hardened (per MicroNote 050) bidirectional suppressor with no parametric shift after 100 krad(Si) TID exposure. Use Value: Eliminates need for redundant TVS placement while meeting NASA EEE-INST-002 Class S reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6163US/TR (commercial grade) | No MIL-PRF-19500/516 qualification; same electrical specs but lower screening (no burn-in, temp cycling, or hermeticity testing). | Limited to non-mission-critical ground-based industrial systems where full JANTX reliability is not mandated. | Select when cost sensitivity outweighs requirement for DoD traceability and extended lifetime validation. |
| JANTXV1N6163US/TR | Higher screening level (JANTXV): includes additional radiation hardness verification, tighter parametric limits, and extended life testing per MIL-PRF-19500/516 Appendix A. | Required for space-qualified payloads and nuclear-hardened command systems where failure probability must be <10⁻⁶. | Choose when mission assurance mandates worst-case parameter stability across radiation, vacuum, and thermal extremes. |
Compared with JANTX1N6163US/TR, the commercial 1N6163US/TR reduces procurement cost and lead time but lacks military test documentation and long-term reliability data; JANTXV1N6163US/TR adds radiation tolerance and tighter V(BR) distribution at higher unit cost and longer qualification cycle - all share identical SQ-MELF footprint and clamping performance.
Availability
JANTX1N6163US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and military vehicle electronics requiring stable component supply with full MIL-PRF-19500/516 traceability and long-term obsolescence management.
Supply support for JANTX1N6163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
JANTX1N6163US/TR belongs to Microsemi's legacy MIL-qualified TVS family designed specifically for fail-safe transient suppression in safety-critical platforms where zero field failures are mandated - including flight control, weapon guidance, and satellite power systems.
FAQ
What is the clamping voltage of JANTX1N6163US/TR at its rated peak pulse current?
The JANTX1N6163US/TR has a maximum clamping voltage (VC) of 103.1 V when subjected to its rated 14.5 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full -55 to +175 °C junction temperature range and forms the basis for overvoltage protection design margins in systems using this device.
Is JANTX1N6163US/TR RoHS compliant?
No, JANTX1N6163US/TR is not RoHS compliant. Per the datasheet nomenclature, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants (e.g., 1N6163AUS), not for JAN/JANTX/JANTXV/JANS military-qualified parts, which retain tin/lead plating for solderability and reliability in high-reliability thermal cycling environments.
Does JANTX1N6163US/TR require polarity-aware PCB layout?
No, JANTX1N6163US/TR does not require polarity-aware PCB layout. As a bidirectional TVS, it exhibits symmetrical avalanche characteristics in both forward and reverse bias, with no anode/cathode marking on the SQ-MELF package. The device functions identically regardless of orientation, simplifying placement and reducing assembly errors.
What is the thermal resistance from junction to end cap for JANTX1N6163US/TR?
The thermal resistance from junction to end cap (RθJEC) for JANTX1N6163US/TR is 5.0 °C/W. This low value enables efficient heat transfer from the silicon junction through the tungsten slugs into the PCB copper or external heatsink, supporting reliable operation during repetitive surge events without thermal runaway.
How does JANTX1N6163US/TR differ from the non-A suffix version 1N6163US/TR?
The JANTX1N6163US/TR (with "A" suffix) specifies tighter electrical tolerances: its clamping voltage (VC) is 5% lower, minimum breakdown voltage (V(BR)) is 5% higher, and peak pulse current (IPP) is 5% higher than the non-A version. These differences reflect stricter screening and binning - the "A" variant is intended for applications demanding higher surge margin and tighter parametric consistency.
JANTX1N6163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 56V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103.1V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6163US/TR FAQ
1.How can I place an order for JANTX1N6163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6163US/TR reliable?
The price and inventory of JANTX1N6163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6163US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6163US/TR?
JANTX1N6163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6163US/TR?
For technical support, including JANTX1N6163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6163US/TR requirements.
6.How does Aetrix verify that JANTX1N6163US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6163US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6163US/TR?
All JANTX1N6163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6163US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6163US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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