Microchip Technology JANTX1N6165US/TR
- Part No.:
- JANTX1N6165US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6165US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTX1N6165US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTX reliability level. It provides 69.2 V working peak standoff voltage (VWM), 125.1 V clamping voltage (VC) at 12 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JANTX1N6165US/TR datasheet, JANTX1N6165US/TR pinout, JANTX1N6165US/TR application, or JANTX1N6165US/TR equivalent, key selection criteria include its military-grade hermetic glass package, Category 1 metallurgical bonds, -55°C to +175°C junction temperature range, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced surge immunity.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses hard-glass construction with tungsten slugs for thermal stability. Its breakdown voltage is 86.5 V minimum at 15 mA test current, and it exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.100 %/°C - critical for high-temperature military platforms where voltage drift must remain bounded.
The device delivers 1500 W peak pulse power under standardized 10/1000 µs transient conditions while maintaining clamping performance across its full operating temperature range. Thermal resistance from junction to end cap is 5.0 °C/W, enabling reliable power dissipation in constrained surface-mount layouts without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 69.2 V - maximum continuous reverse standoff voltage before conduction begins; sets system-level overvoltage trip threshold. |
| V(BR) min | 86.5 V @ 15 mA - guaranteed minimum breakdown voltage; defines lower bound of clamping onset region. |
| VC @ IPP | 125.1 V @ 12 A - clamping voltage during 10/1000 µs surge; determines maximum voltage seen by protected ICs. |
| PPP | 1500 W - peak pulse power rating; supports robust protection against lightning secondary effects per IEC61000-4-5. |
| TJ Range | -55°C to +175°C - extended junction temperature range enables deployment in engine bay, radar, and space-qualified systems. |
| RθJEC | 5.0 °C/W - low thermal resistance to end cap allows direct heat transfer to PCB copper or chassis mounting points. |
| ID @ VWM | 5 µA - ultra-low leakage current ensures minimal standby power loss in always-on military subsystems. |
Pinout & Package
Package: SQ-MELF (C package), hermetically sealed voidless hard glass with tungsten slugs; tin/lead-plated copper terminals; no polarity marking; weight ≈1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | Both terminals function identically; no DC polarity - enables symmetric placement across differential lines or unidirectional rails. |
| End Cap (glass body contact) | Thermal interface | Direct thermal path to PCB copper pour or metal chassis; requires soldered end-cap contact for rated RθJEC = 5.0 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and long-term parameter drift - essential for 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock, thermal cycling, and radiation exposure per MIL-PRF-19500/516. |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass-to-metal interfaces in high-humidity or salt fog environments. |
| IEC61000-4-5 compliance | Validated protection against lightning-induced surges up to select levels - reduces need for external filtering in ground vehicle comms systems. |
Applications
| Aerospace Power Distribution | Ground Vehicle Radar Front-End |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across bus input prior to DC-DC converter. Use Value: Limits transient excursions to ≤125.1 V, preventing damage to downstream PMICs and FPGAs while surviving >1000 surges per MIL-STD-704F. |
Use Scenario: Surge suppression on RF receiver LNA bias lines exposed to EMP and antenna-coupled transients. IC Role / Device Role / Timing Role: Low-leakage (5 µA) standoff device placed in series with bias feed, shunted to ground. Use Value: Maintains <5 µA standby current during normal operation yet clamps sub-100 ns transients to protect GaAs MMICs. |
| Military Radio Transceiver | Naval Communication Interface |
Use Scenario: ESD and EFT protection on RS-422/485 data lines in handheld tactical radios. IC Role / Device Role / Timing Role: Bidirectional TVS mounted directly at connector entry point, before line driver/receiver. Use Value: Meets IEC61000-4-2 Level 4 (15 kV air, 8 kV contact) and IEC61000-4-4 (4 kV) without signal distortion or latch-up. |
Use Scenario: Lightning surge protection on shipboard Ethernet and MIL-STD-1553B data buses. IC Role / Device Role / Timing Role: Primary clamping element in multi-stage protection network upstream of isolation transformers. Use Value: Handles 1500 W peak pulse energy per IEC61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs) without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6165AUS | Commercial-grade version; same VWM (69.2 V), VC (125.1 V), and PPP (1500 W), but not MIL-qualified. | Lacks JAN/JANTX qualification; unsuitable for DoD procurement or flight-critical systems. | Select only for non-military industrial prototypes or cost-sensitive commercial variants requiring identical electrical specs. |
| JANTXV1N6165US | Higher reliability grade (JANTXV); same electrical specs but qualified to tighter parametric limits and extended screening per MIL-PRF-19500/516. | Required for space-qualified payloads and nuclear-hardened systems where failure rate must be <10⁻⁶/hr. | Choose when mission-critical uptime, radiation hardness per MicroNote 050, or extended temperature cycling validation is mandatory. |
Compared with JANTX1N6165US/TR, 1N6165AUS offers identical clamping performance at lower cost but no military traceability, while JANTXV1N6165US adds screening rigor and radiation tolerance - making the JANTX variant the optimal balance of qualification assurance and production scalability for defense prime integrators.
Availability
JANTX1N6165US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle radar front-end protection, and military radio transceiver ESD hardening requiring stable component supply across extended program lifecycles.
Supply support for JANTX1N6165US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec components.
The JANTX1N6165US/TR belongs to Microsemi's 1N6138AUS–1N6173AUS TVS family, engineered specifically for military-grade transient suppression in harsh-environment electronics where hermetic sealing and Category 1 bonding are non-negotiable.
FAQ
What is the clamping voltage of JANTX1N6165US/TR under standard 10/1000 µs surge conditions?
The JANTX1N6165US/TR has a maximum clamping voltage (VC) of 125.1 V at 12 A peak pulse current (IPP) for a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test methods and represents the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is JANTX1N6165US/TR RoHS compliant?
No, JANTX1N6165US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant matte-tin terminations are available only on commercial-grade versions (e.g., 1N6165AUS), not on JAN, JANTX, JANTXV, or JANS qualified parts. The JANTX1N6165US/TR uses traditional tin/lead plating to ensure solder joint reliability under thermal cycling and mechanical shock per military standards.
What does the "US" suffix indicate in JANTX1N6165US/TR?
The "US" suffix in JANTX1N6165US/TR denotes the SQ-MELF surface-mount package configuration - specifically the hermetically sealed voidless hard-glass case with square-end-cap terminals. It distinguishes this variant from axial-leaded versions (e.g., 1N6165) and confirms compatibility with automated SMT placement and reflow processes per EIA-481-B tape-and-reel standards.
How does JANTX1N6165US/TR differ from the non-"A" version (e.g., JANTX1N6165US)?
JANTX1N6165US/TR is the "A" version, meaning it meets tighter voltage tolerances: minimum breakdown voltage is 86.5 V (vs. 5% lower for non-A), clamping voltage is 125.1 V (vs. 5% higher for non-A), and peak pulse current is 12 A (vs. 5% lower for non-A). These tighter specs ensure more predictable clamping behavior in precision military systems where margin control is critical.
Can JANTX1N6165US/TR be used in place of JANTXV1N6165US in a design?
JANTX1N6165US/TR may be used in place of JANTXV1N6165US only if the application does not require JANTXV-level screening - including extended burn-in, radiation testing per MIL-STD-883, and tighter parametric limits. Electrically, both share identical VWM, VC, and PPP; however, JANTXV qualification adds validation for space and nuclear environments where single-event effects must be mitigated.
JANTX1N6165US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6165US/TR FAQ
1.How can I place an order for JANTX1N6165US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6165US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6165US/TR reliable?
The price and inventory of JANTX1N6165US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6165US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6165US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6165US/TR transactions.
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4.How is shipping managed for JANTX1N6165US/TR?
JANTX1N6165US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6165US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6165US/TR?
For technical support, including JANTX1N6165US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6165US/TR requirements.
6.How does Aetrix verify that JANTX1N6165US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6165US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6165US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6165US/TR?
All JANTX1N6165US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6165US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6165US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6165US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6165US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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