Microchip Technology JANTX1N6167US/TR
- Part No.:
- JANTX1N6167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6167US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,832
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTX1N6167US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 86.6 V working standoff voltage (VWM), and 151.3 V clamping voltage (VC) at 9.9 A peak pulse current. It operates across –55 °C to +175 °C and is used in avionics power rail protection where failure tolerance and radiation hardness are critical.
For engineers reviewing the JANTX1N6167US/TR datasheet, JANTX1N6167US/TR pinout, JANTX1N6167US/TR application, or JANTX1N6167US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTX qualification, Category 1 metallurgical bonds, triple-layer passivation, IEC61000-4-2/4-4/4-5 compliance, and hard-glass SQ-MELF construction with square-end-cap terminals.
Technical Context
This TVS diode functions as a bidirectional voltage-clamping device with no polarity marking, designed to shunt transient energy above its breakdown threshold (104.5 V min @ 12 mA) while maintaining low leakage (<5 µA @ 86.6 V). Its clamping action occurs within nanoseconds during 10/1000 µs surges, limiting downstream circuit voltage to ≤151.3 V.
The device uses tungsten slugs and internal Category 1 metallurgical bonds inside a voidless hermetic glass package, enabling operation up to 175 °C junction temperature and intrinsic radiation hardness per MicroNote 050. Thermal resistance from junction to end cap is 5.0 °C/W, supporting high-reliability thermal management in constrained aerospace layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 86.6 V - Maximum continuous reverse voltage before conduction begins; defines safe operating margin below clamping threshold. |
| V(BR) min | 104.5 V @ 12 mA - Minimum breakdown voltage ensures reliable turn-on only above system overvoltage thresholds. |
| VC | 151.3 V @ 9.9 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on protected ICs. |
| PPP | 1500 W - Peak pulse power handling capability for standardized lightning-induced transients. |
| TJ/TSTG | –55 °C to +175 °C - Extended temperature range supports deployment in engine bays and space-grade electronics. |
| RθJEC | 5.0 °C/W - Low junction-to-end-cap thermal resistance enables direct thermal coupling to heatsink or PCB copper. |
| αV(BR) | 0.100 %/°C - Predictable temperature drift of breakdown voltage simplifies design margining across operational extremes. |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) hermetically sealed voidless glass package with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient current path | Either terminal serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB pads for simultaneous heat dissipation and low-inductance surge return path. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating DC rails without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock per MIL-STD-750 Method 2024. |
| Triple-layer passivation | Prevents surface leakage and moisture ingress in high-humidity or salt-spray environments. |
| Voidless hermetic seal | Eliminates internal delamination risk during reflow or long-term storage, ensuring 100% reliability in mission-critical systems. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus lines in flight control computers against load dump and induced lightning transients. IC Role / Device Role / Timing Role: Primary clamping element placed directly at bus entry point to limit voltage excursion to <152 V. Use Value: Prevents latch-up or gate oxide rupture in downstream FPGAs and ADCs by enforcing strict clamping with <5 µA leakage at nominal bus voltage. | Use Scenario: Shielding ARINC 429 receivers from ESD events and coupled transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Bidirectional transient suppressor across differential data lines, leveraging symmetric clamping response. Use Value: Maintains signal integrity by clamping both positive and negative excursions equally without adding DC bias or skew. |
| Military Vehicle Electronics | Satellite Power Conditioning |
Use Scenario: Safeguarding 270 V DC starter-generator interfaces in armored vehicle power systems against EMP-like surges. IC Role / Device Role / Timing Role: High-energy transient absorber mounted adjacent to busbar connections with direct thermal anchoring. Use Value: Delivers 1500 W pulse handling with 5.0 °C/W thermal resistance, enabling sustained operation at 150 °C ambient without derating. | Use Scenario: Protecting DC-DC converter inputs in LEO satellite power modules exposed to single-event effects and solar flare-induced surges. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary transients generated by particle strikes in upstream converters. Use Value: Inherent radiation tolerance per MicroNote 050 eliminates need for additional shielding or redundancy, reducing SWaP-C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6167US | Tape-and-reel packaging omitted; bulk or tube delivery only; identical electrical specs and qualification level. | No automated pick-and-place support; requires manual or semi-automated assembly. | Select JANTX1N6167US/TR when SMT line integration and traceable reel-based logistics are required. |
| JANTXV1N6167US/TR | Higher reliability screening per MIL-PRF-19500/516 JANTXV level; tighter parametric limits and extended burn-in. | Required for Class H or Class K spaceflight programs where zero-defect assurance is mandated. | Choose JANTXV1N6167US/TR only if program specifications explicitly require JANTXV-level testing and documentation. |
Compared with JANTX1N6167US/TR, the JANTX variant lacks tape-and-reel convenience but matches all electrical and environmental performance, while the JANTXV variant adds cost and lead time for enhanced screening-neither is pin-compatible in the sense of physical interchangeability, as all share identical SQ-MELF geometry and bidirectional terminal function.
Availability
JANTX1N6167US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and military vehicle electronics requiring stable component supply, full traceability, and MIL-qualified consistency.
Supply support for JANTX1N6167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and military-qualified components.
The 1N6138AUS–1N6173AUS series was developed specifically for MIL-PRF-19500/516-compliant transient suppression in mission-critical platforms where hermeticity, thermal robustness, and long-term parameter stability are non-negotiable.
FAQ
What is the clamping voltage of JANTX1N6167US/TR under a 10/1000 µs surge?
The JANTX1N6167US/TR has a maximum clamping voltage (VC) of 151.3 V when subjected to a 10/1000 µs waveform at 9.9 A peak pulse current. This value is measured per MIL-STD-750 Method 3013 and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The JANTX1N6167US/TR maintains this clamping performance across its full qualified temperature range of –55 °C to +175 °C.
Is JANTX1N6167US/TR RoHS compliant?
No, JANTX1N6167US/TR is not RoHS compliant. Per the manufacturer's nomenclature and datasheet notes, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants-not for JAN, JANTX, JANTXV, or JANS qualified parts like JANTX1N6167US/TR. The JANTX1N6167US/TR uses standard tin/lead plating on copper terminals to meet MIL-PRF-19500/516 solderability and reliability requirements.
Does JANTX1N6167US/TR have polarity markings?
No, JANTX1N6167US/TR has no polarity markings because it is a bidirectional TVS diode. Its symmetrical construction allows either end to serve as anode or cathode depending on transient polarity, eliminating orientation constraints during PCB placement. This feature simplifies layout and reduces assembly errors in high-reliability systems where JANTX1N6167US/TR is commonly deployed.
What is the thermal resistance specification for JANTX1N6167US/TR?
The JANTX1N6167US/TR has a thermal resistance from junction to end cap (RθJEC) of 5.0 °C/W, as specified in the Absolute Maximum Ratings table. This low value enables efficient heat transfer from the silicon junction directly to the PCB pad or heatsink via the end-cap terminals. The JANTX1N6167US/TR relies on this path-not ambient convection-for thermal management in high-power transient events.
How does JANTX1N6167US/TR differ from the commercial 1N6167AUS?
JANTX1N6167US/TR differs from commercial 1N6167AUS in qualification level, screening, and packaging: it meets MIL-PRF-19500/516 JANTX requirements including extended temperature testing, lot acceptance tests, and hermeticity validation, whereas 1N6167AUS is commercial-grade. JANTX1N6167US/TR also uses tin/lead plating and ships in EIA-481-B tape-and-reel, unlike RoHS-compliant matte-tin commercial variants.
JANTX1N6167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 86.6V
- Voltage - Breakdown (Min):
- 104.5V
- Voltage - Clamping (Max) @ Ipp:
- 151.3V
- Current - Peak Pulse (10/1000µs):
- 9.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6167US/TR FAQ
1.How can I place an order for JANTX1N6167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6167US/TR reliable?
The price and inventory of JANTX1N6167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6167US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6167US/TR?
JANTX1N6167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6167US/TR?
For technical support, including JANTX1N6167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6167US/TR requirements.
6.How does Aetrix verify that JANTX1N6167US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6167US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6167US/TR?
All JANTX1N6167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6167US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6167US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

