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Microchip Technology JANTX1N6168AUS/TR
- Part No.:
- JANTX1N6168AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6168AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,171
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Product details
Overview
JANTX1N6168AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, with 91.2 V working standoff voltage (VWM), 114.0 V minimum breakdown voltage (V(BR)), and 165.1 V clamping voltage (VC) at 9.1 A peak pulse current (IPP). It delivers 1500 W peak pulse power for 10/1000 µs transients and operates from –55 °C to +175 °C, serving as primary overvoltage protection in avionics power distribution systems.
For engineers reviewing the JANTX1N6168AUS/TR datasheet, JANTX1N6168AUS/TR pinout, JANTX1N6168AUS/TR application, or JANTX1N6168AUS/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTX qualification, Category 1 metallurgical bonds, triple-layer passivation, RoHS-compliant tin/lead termination (non-RoHS per standard), and absence of polarity marking due to bidirectional operation.
Technical Context
This TVS diode operates in avalanche breakdown mode to clamp transient overvoltages above its VWM of 91.2 V while maintaining low leakage (<5 µA) under normal bias. Its hard-glass SQ-MELF construction enables stable thermal resistance (RθJEC = 5.0 °C/W) and supports continuous off-state power dissipation up to 5.0 W at TEC ≤ 150 °C.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning surge) immunity requirements. Its temperature coefficient of breakdown voltage (αV(BR) = 0.100 %/°C) ensures predictable clamping behavior across –55 °C to +175 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 91.2 V - Maximum continuous reverse-bias voltage before conduction begins; defines system operating margin. |
| V(BR) min | 114.0 V @ 10 mA - Minimum voltage at which avalanche breakdown initiates; sets lower bound for clamping onset. |
| VC @ IPP | 165.1 V @ 9.1 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream circuitry. |
| PPP | 1500 W - Peak transient energy handling capacity; validates suitability for MIL-STD-461 CS115/CS116-level surges. |
| TJ Range | –55 °C to +175 °C - Full military temperature range; enables deployment in engine-mounted or space-constrained avionics enclosures. |
| ID @ VWM | <5 µA - Ultra-low leakage current at rated standoff; prevents signal integrity degradation in high-impedance sensor interfaces. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; supports direct heat sinking via PCB copper pour or metal chassis contact. |
Pinout & Package
SQ-MELF (Square-End-Cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals. No polarity marking; bidirectional operation confirmed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient conduction path | Identical terminals enable placement without orientation check; bidirectional clamping protects both polarities of DC bus or AC line. |
| End cap surface | Thermal interface | Direct thermal path to PCB copper or heatsink; requires ≥0.090″ (2.29 mm) center adhesive pad if non-solder mounting is used. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and long-term parameter drift; required for 20+ year field life in sealed military platforms. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling (–55/+175 °C) and mechanical shock; validated per MIL-STD-750 Method 2035. |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog environments; critical for naval and airborne deployments. |
| JANTX qualification | Fully tested to MIL-PRF-19500/516 screening levels including burn-in, temperature cycling, and lot acceptance testing. |
Applications
| Avionics Power Bus Protection | Military Vehicle DC Distribution |
|---|---|
Use Scenario: Protecting 28 VDC and 270 VDC aircraft bus lines from load dump, inductive switching spikes, and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit transient excursions to ≤165.1 V. Use Value: Prevents latch-up or destruction of MIL-STD-1553 transceivers, ARINC 429 line drivers, and flight control microcontrollers during EMI events. | Use Scenario: Safeguarding 24 VDC auxiliary power networks in tracked armored vehicles exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Primary overvoltage suppressor mounted directly at battery feed-through points on vehicle control modules. Use Value: Withstands 1500 W pulses without degradation, enabling compliance with MIL-STD-461G CS115 (bulk cable injection) and RS103 (radiated susceptibility). |
| Spacecraft Power Conditioning | Naval Radar RF Front-End Protection |
Use Scenario: Shielding DC-DC converter inputs in satellite power management units against secondary lightning effects and solar array arcing. IC Role / Device Role / Timing Role: Standoff-rated TVS placed upstream of radiation-hardened DC/DC controllers to absorb >100 A transient currents. Use Value: Inherent radiation hardness (per MicroNote 050) and 175 °C max junction temperature support extended mission life in geosynchronous orbit. | Use Scenario: Protecting low-noise amplifier (LNA) inputs and mixer stages in shipboard S-band radar receivers from antenna-coupled transients. IC Role / Device Role / Timing Role: Low-capacitance, fast-response TVS integrated into RF front-end matching network substrate. Use Value: Bidirectional clamping preserves RF signal symmetry; hermetic seal prevents outgassing-induced performance shift in vacuum-sealed radar modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6167AUS | Lower VWM (86.6 V), lower VC (151.3 V), higher IPP (9.9 A) | Better suited for 24–48 VDC systems requiring tighter clamping margin | Select when system nominal voltage is ≤90 V and lower clamping voltage is prioritized over higher standoff headroom. |
| JANTX1N6169AUS | Higher VWM (98.8 V), higher VC (178.8 V), lower IPP (8.4 A) | Optimized for 115 VAC-derived DC rails or 100 VDC avionics buses | Choose when protecting circuits with higher operating voltage tolerance and where peak current demand is reduced. |
Compared with JANTX1N6168AUS/TR, JANTX1N6167AUS offers tighter clamping at lower voltage but less standoff margin, while JANTX1N6169AUS provides greater voltage headroom at the cost of higher clamping stress-selection depends on whether system design prioritizes fault voltage limiting or operating voltage robustness.
Availability
JANTX1N6168AUS/TR is available at Aetrix Electronics and suitable for avionics power bus protection, military vehicle DC distribution, and spacecraft power conditioning requiring stable component supply, full traceability, and long-term obsolescence mitigation.
Supply support for JANTX1N6168AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec qualified components.
The JANTX1N6168AUS/TR belongs to Microsemi's 1N6138AUS–1N6173AUS family of military-grade bidirectional TVS diodes, engineered specifically for survivability in harsh electromagnetic environments where failure is not an option.
FAQ
What is the clamping voltage of JANTX1N6168AUS/TR and how is it measured?
The clamping voltage (VC) of JANTX1N6168AUS/TR is 165.1 V, measured at 9.1 A peak pulse current (IPP) using a standardized 10/1000 µs double-exponential waveform per MIL-STD-1275 and IEC61000-4-5. This value represents the maximum voltage seen across the device during surge conduction and is guaranteed across the full –55 °C to +175 °C operating range. JANTX1N6168AUS/TR maintains this clamping performance due to its hard-glass construction and Category 1 metallurgical bonds.
Is JANTX1N6168AUS/TR RoHS compliant?
JANTX1N6168AUS/TR is not RoHS compliant, as it uses standard tin/lead (SnPb) plating per MIL-PRF-19500/516 JANTX requirements. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6168AUS without JAN/JANTX prefix). The JANTX1N6168AUS/TR retains SnPb terminations to ensure solder joint reliability under thermal cycling and mechanical shock conditions typical of military platforms.
Does JANTX1N6168AUS/TR have polarity markings?
No, JANTX1N6168AUS/TR has no polarity markings because it is a bidirectional TVS diode. Its symmetrical structure allows installation in either orientation across a circuit node, simplifying assembly and eliminating risk of reverse-mounting errors. This feature is explicitly confirmed in the mechanical documentation, which states "No polarity marking for these bidirectional TVSs" and specifies identical electrical behavior in both directions.
What is the thermal resistance specification for JANTX1N6168AUS/TR?
JANTX1N6168AUS/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured under standard test conditions. This low thermal resistance enables efficient heat transfer from the silicon junction through the tungsten slug and end cap into the PCB copper or external heatsink. The value is critical for calculating steady-state power derating above 150 °C and is validated per MIL-STD-750 Method 1071.
How does JANTX1N6168AUS/TR differ from the non-A version (e.g., JANTX1N6168US)?
JANTX1N6168AUS/TR features tighter voltage tolerances: its minimum breakdown voltage (V(BR)) is 114.0 V, clamping voltage (VC) is 165.1 V, and peak pulse current (IPP) is 9.1 A. In contrast, the non-A suffix version (e.g., JANTX1N6168US) has 5% lower V(BR), 5% higher VC, and 5% lower IPP per the nomenclature note. These differences affect clamping precision and surge-handling margin, making the "A" version preferred for applications demanding strict voltage control.
JANTX1N6168AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 91.2V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165.1V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6168AUS/TR FAQ
1.How can I place an order for JANTX1N6168AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6168AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6168AUS/TR reliable?
The price and inventory of JANTX1N6168AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6168AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6168AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6168AUS/TR transactions.
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4.How is shipping managed for JANTX1N6168AUS/TR?
JANTX1N6168AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6168AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6168AUS/TR?
For technical support, including JANTX1N6168AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6168AUS/TR requirements.
6.How does Aetrix verify that JANTX1N6168AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6168AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6168AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6168AUS/TR?
All JANTX1N6168AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6168AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6168AUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N6168AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6168AUS/TR Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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