My Inquiry
My Account
Microchip Technology JANTX1N6168US/TR
- Part No.:
- JANTX1N6168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6168US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,441
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTX1N6168US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 91.2 V working standoff voltage (VWM), and 165.1 V clamping voltage (VC) at 9.1 A peak pulse current - deployed in avionics power rail protection and MIL-STD-461E transient suppression.
For engineers reviewing the JANTX1N6168US/TR datasheet, JANTX1N6168US/TR pinout, JANTX1N6168US/TR application, or JANTX1N6168US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTX qualification, Category 1 metallurgical bonds, -55°C to +175°C operating junction temperature, RoHS-compliant tin/lead terminations (commercial versions only), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced surge immunity.
Technical Context
This TVS operates bidirectionally with no polarity marking and relies on hard-glass construction with tungsten slugs for thermal stability and mechanical robustness. Its breakdown voltage is 114.0 V at 10 mA (VBR), with a temperature coefficient of 0.100 %/°C and maximum standby current of 5 µA at VWM.
The device delivers 1500 W peak pulse power under 10/1000 µs waveform, derates linearly above 150 °C case temperature to zero at 175 °C, and exhibits 5.0 °C/W thermal resistance from junction to end cap (RθJEC). It is non-sensitive to ESD per MIL-STD-750 Method 1020 and inherently radiation-hardened per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 91.2 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins. |
| VBR @ IBR | 114.0 V @ 10 mA - Minimum voltage at which device enters breakdown region; defines overvoltage threshold. |
| VC @ IPP | 165.1 V @ 9.1 A - Clamped voltage during 10/1000 µs surge; determines protected circuit's max stress level. |
| PPP | 1500 W - Peak pulse power handling capability for standardized surge waveform; critical for MIL-STD-1275/461E compliance. |
| TJ/TSTG | -55°C to +175°C - Extended temperature range enables deployment in aerospace, downhole, and space-grade systems. |
| RθJEC | 5.0 °C/W - Low thermal resistance supports high-power transient dissipation without excessive junction heating. |
| αVBR | 0.100 %/°C - Predictable VBR drift over temperature ensures stable clamping across operational envelope. |
Pinout & Package
SQ-MELF (Square-end-cap Metal Electrode Leadless Face) hermetically sealed glass package with tungsten slugs and tin/lead-plated copper terminals; no polarity marking due to bidirectional operation; weight ≈1100 mg; dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | Both ends function identically; no polarity required - simplifies PCB layout and eliminates orientation errors. |
| End Cap (glass body contact) | Thermal interface | Direct thermal path to mounting surface; requires ≥0.090 in (2.29 mm) center adhesive pad if solder-only mounting insufficient. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk - essential for 20+ year field life in sealed military enclosures. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock per MIL-STD-883, enabling use in launch-vibration environments. |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog conditions typical in naval platforms. |
| MIL-PRF-19500/516 JANTX qualification | Validated reliability screening includes burn-in, temperature cycling, and life testing - required for DoD procurement and flight-critical subsystems. |
Applications
| Aerospace Power Distribution | Naval Radar Front-End Protection |
|---|---|
Use Scenario: Protecting 28 VDC aircraft bus from load dump and alternator transients per MIL-STD-1275B. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit voltage excursions to ≤165.1 V during 1500 W surges. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs by maintaining rail integrity during engine start-stop cycles. | Use Scenario: Shielding RF receiver LNA inputs from ESD events and radar transmitter coupling spikes. IC Role / Device Role / Timing Role: Fast-response TVS shunting transient energy before it reaches sensitive GaAs MMIC stages. Use Value: Maintains <1 dB noise figure degradation after 15 kV contact ESD (IEC61000-4-2 Level 4) due to sub-nanosecond response and low capacitance. |
| Ground Vehicle Command & Control | Satellite Power Conditioning |
Use Scenario: Securing CAN bus transceivers and microcontroller I/O against ISO 7637-2 pulse 1/2/5a induced surges in armored vehicles. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing 100 A pulses without failure while preserving signal integrity on 5 V logic lines. Use Value: Enables uninterrupted mission-critical comms during electromagnetic warfare exposure via guaranteed 9.1 A IPP capability and radiation hardness. | Use Scenario: Safeguarding solar array regulator MOSFET gates from secondary lightning effects per IEC61000-4-5 (Level 3, 2 kV line-earth). IC Role / Device Role / Timing Role: High-VWM (91.2 V) TVS clamping bus transients before they propagate into gate drive circuitry. Use Value: Avoids single-event gate oxide rupture in space-grade power ICs by limiting transient overshoot to 165.1 V with zero recovery delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6168AUS | Same electrical specs but commercial-grade; lacks MIL-PRF-19500/516 qualification and Category 1 bonds. | Not approved for JANTX-level programs; limited to non-mission-critical industrial use. | Select only when full military screening and radiation tolerance are unnecessary. |
| SMCJ90A | Surface-mount DO-214AB package; 90 V VWM, 146 V VC @ 10.3 A; 1500 W rating; RoHS-compliant; no hermetic seal. | Higher capacitance and lower thermal robustness; unsuitable for vacuum or high-reliability sealed modules. | Choose for cost-sensitive commercial designs where MIL-spec isn't mandated and board space permits larger footprint. |
Compared with JANTX1N6168US/TR, 1N6168AUS omits military screening and radiation hardening but matches all electrical parameters, while SMCJ90A trades hermetic reliability and temperature range for standard SMT compatibility and RoHS compliance - making JANTX1N6168US/TR irreplaceable in flight-qualified, long-life, or radiation-exposed deployments.
Availability
JANTX1N6168US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, naval radar front-end protection, and ground vehicle command & control systems requiring stable component supply across extended product lifecycles and defense procurement cycles.
Supply support for JANTX1N6168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for defense, aerospace, and industrial markets.
The JANTX1N6168US/TR belongs to Microsemi's legacy MIL-PRF-19500/516-qualified TVS family, engineered specifically for mission-critical transient suppression where failure is not an option - including launch systems, satellite power buses, and hardened C4ISR platforms.
FAQ
What is the clamping voltage of JANTX1N6168US/TR at its rated peak pulse current?
The JANTX1N6168US/TR has a maximum clamping voltage (VC) of 165.1 V at 9.1 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuits during surge events. The JANTX1N6168US/TR maintains this clamping performance across its full -55°C to +175°C junction temperature range.
Is JANTX1N6168US/TR RoHS compliant?
JANTX1N6168US/TR is not RoHS compliant, as it uses traditional tin/lead plating on copper terminals per MIL-PRF-19500/516 requirements. RoHS-compliant matte-tin terminations are available only on commercial-grade variants (e.g., 1N6168AUS), not on JANTX-qualified parts. The JANTX1N6168US/TR remains exempt under RoHS Annex III for military and space applications requiring lead-based finishes for reliability and solder joint integrity.
Does JANTX1N6168US/TR require polarity-aware PCB layout?
No, JANTX1N6168US/TR does not require polarity-aware PCB layout because it is a bidirectional TVS with no anode/cathode distinction. The device functions identically regardless of terminal orientation, and its SQ-MELF package carries no polarity marking. This eliminates assembly errors and simplifies routing in high-density layouts - a key advantage of the JANTX1N6168US/TR in dual-rail or AC-coupled protection schemes.
What is the thermal resistance specification for JANTX1N6168US/TR?
JANTX1N6168US/TR has a thermal resistance from junction to end cap (RθJEC) of 5.0 °C/W, measured under standard test conditions. This low value reflects its tungsten slug construction and direct thermal path through the glass body to the PCB mounting surface. Engineers must ensure adequate thermal contact area and, if needed, use optional center adhesive per package drawing to maintain this RθJEC in high-power surge scenarios.
How does JANTX1N6168US/TR meet IEC61000-4-5 requirements?
JANTX1N6168US/TR meets IEC61000-4-5 (surge immunity) up to select levels - specifically, it suppresses secondary lightning-induced surges by clamping to 165.1 V during 10/1000 µs impulses, limiting energy delivered to downstream circuitry. Its 1500 W peak pulse power rating and robust hard-glass construction enable reliable operation under repeated surge stress, as validated in Microsemi's application testing referenced in MicroNote 050 and T4-LDS-0278-1.
JANTX1N6168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 91.2V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165.1V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6168US/TR FAQ
1.How can I place an order for JANTX1N6168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6168US/TR reliable?
The price and inventory of JANTX1N6168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6168US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N6168US/TR?
JANTX1N6168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6168US/TR?
For technical support, including JANTX1N6168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6168US/TR requirements.
6.How does Aetrix verify that JANTX1N6168US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6168US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6168US/TR?
All JANTX1N6168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6168US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6168US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
