Microchip Technology JANTX1N6172US/TR
- Part No.:
- JANTX1N6172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6172US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:3,092
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Product details
Overview
JANTX1N6172US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 136.8 V working standoff voltage (VWM), 245.7 V clamping voltage (VC) at 6.1 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.
For engineers reviewing the JANTX1N6172US/TR datasheet, JANTX1N6172US/TR pinout, JANTX1N6172US/TR application, or JANTX1N6172US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTX qualification, bidirectional surge suppression capability, hard-glass construction with Category 1 metallurgical bonds, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning-induced transients.
Technical Context
This TVS diode employs a silicon avalanche structure optimized for fast response (<1 ns) to transient overvoltages and maintains stable clamping performance across its full operating temperature range. Its bidirectional symmetry enables protection of AC-coupled or floating signal/power lines without polarity concerns.
The device uses tungsten slugs and triple-layer passivation within a voidless hermetic glass package, ensuring long-term reliability under thermal cycling, humidity, and radiation exposure per MicroNote 050. Thermal resistance junction-to-end cap is 5.0 °C/W, supporting robust power dissipation during repetitive surges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 136.8 V - Maximum continuous DC or peak reverse voltage before conduction begins; sets upper limit for protected circuit operating voltage. |
| V(BR) min | 171.0 V @ 5 mA - Minimum breakdown voltage threshold; ensures consistent turn-on behavior across production lots and temperature. |
| VC @ IPP | 245.7 V @ 6.1 A - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream components. |
| PPP | 1500 W - Peak pulse power handling for standardized 10/1000 µs waveform; determines survivability against high-energy transients. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; supports operation in extreme environmental conditions. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff voltage; low enough to avoid loading sensitive bias networks. |
| αV(BR) | 0.110 %/°C - Temperature coefficient of breakdown voltage; enables predictable V(BR) drift over temperature for system-level margining. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 4.65–5.13 mm, BL = 5.21–6.22 mm, ECT = 0.48–0.71 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity - enables symmetric AC line protection without orientation constraints. |
| End Cap (both ends) | Thermal & electrical interface | Directly bonded tungsten slug provides low thermal resistance (5.0 °C/W) and mechanical stability; requires solder pad contact on both ends for optimal heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional avalanche clamping | Enables single-device protection of AC signals, differential buses, or ungrounded power rails without external polarity management. |
| Voidless hermetic glass seal | Eliminates internal delamination risk under thermal shock or long-term humidity exposure - critical for 20+ year field life in aerospace systems. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical vibration and thermal cycling per MIL-STD-750 Method 2037 - required for JANTX reliability level. |
| MIL-PRF-19500/516 qualification | Validated screening includes burn-in, temperature cycling, and surge testing - ensures zero infant mortality in mission-critical deployments. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting 28 VDC aircraft bus feeders from load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping element placed directly across bus input to shunt transients before reaching downstream converters and controllers. Use Value: Withstands 1500 W pulses and operates up to +175 °C ambient - matches engine bay thermal profiles while maintaining clamping stability. | Use Scenario: Shielding ARINC 429 or MIL-STD-1553B data lines from ESD and coupled transients in flight control computers. IC Role / Device Role / Timing Role: Bidirectional TVS placed differential-mode across twisted-pair lines to suppress common- and differential-mode noise simultaneously. Use Value: Sub-1 ns response time and <5 µA leakage preserve signal integrity and timing margins without adding capacitive loading. |
| Ground Vehicle Command Systems | Satellite Power Conditioning |
Use Scenario: Safeguarding 24 VDC command interfaces in armored vehicle electronics exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Front-end transient suppressor mounted at connector entry point to prevent latch-up in FPGAs and microcontrollers. Use Value: JANTX qualification ensures immunity to radiation and thermal shock - validated per MIL-STD-810G and MIL-STD-461F. | Use Scenario: Protecting DC-DC converter inputs in LEO satellite power modules from solar array arc transients. IC Role / Device Role / Timing Role: High-reliability TVS integrated into radiation-hardened PCB layout to clamp >1 kV spikes without degradation. Use Value: Inherent radiation hardness per MicroNote 050 and hermetic seal prevent parametric shift after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6172US | Higher screening level (JANTXV vs JANTX); tighter VC tolerance (±5% vs ±10%), lower αV(BR) drift, and extended life test requirements. | Required for programs demanding enhanced burn-in and lot acceptance testing per MIL-PRF-19500/516 Appendix A. | Select when system-level reliability targets exceed standard JANTX requirements - especially for manned spacecraft or nuclear command systems. |
| 1N6172AUS (commercial) | No MIL qualification; RoHS-compliant matte-tin plating available; same electrical specs but no screening or traceability documentation. | Suitable only for non-military prototypes or ground-test benches where qualification documentation is not mandated. | Choose for cost-sensitive development phases where full JANTX traceability is unnecessary - not for flight or deployed hardware. |
Compared with JANTX1N6172US/TR, JANTXV1N6172US offers higher assurance for ultra-high-reliability missions, while 1N6172AUS provides identical electrical performance at lower cost and lead time - but lacks military screening, documentation, and long-term supply guarantees.
Availability
JANTX1N6172US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, and ground vehicle command systems requiring stable component supply across extended program lifecycles.
Supply support for JANTX1N6172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The 1N6138AUS–1N6173AUS series was developed specifically for military-grade transient suppression in harsh-environment platforms where failure is not an option - prioritizing hermeticity, surge robustness, and long-term parametric stability over cost or commercial convenience.
FAQ
What is the maximum clamping voltage of JANTX1N6172US/TR under a 10/1000 µs surge?
The JANTX1N6172US/TR has a maximum clamping voltage (VC) of 245.7 V when subjected to a 6.1 A peak pulse current with a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full –55 °C to +175 °C operating temperature range. The clamping performance remains stable due to the device's Category 1 metallurgical bonds and voidless hermetic construction.
Is JANTX1N6172US/TR compatible with lead-free reflow processes?
JANTX1N6172US/TR is qualified for solder reflow at 260 °C for 10 seconds per MIL-STD-750 Method 2032, making it compatible with standard lead-free reflow profiles. However, its terminals use tin/lead plating (not RoHS-compliant), so it is not suitable for fully lead-free assembly unless exempted under J-STD-609 Category 7. For RoHS-compliant alternatives, consider the commercial 1N6172AUS variant.
Does JANTX1N6172US/TR require polarity-aware PCB layout?
No - JANTX1N6172US/TR is a bidirectional TVS diode with no polarity marking and symmetrical avalanche characteristics. Either end may be connected to either side of a protected line, enabling simplified layout for AC-coupled interfaces like MIL-STD-1553B or isolated DC-DC feedback paths. This eliminates orientation errors during automated placement and reduces BOM complexity.
What is the standby leakage current of JANTX1N6172US/TR at its rated standoff voltage?
At its rated working standoff voltage (VWM) of 136.8 V and ambient temperature of 25 °C, the JANTX1N6172US/TR exhibits a maximum standby leakage current (ID) of 5 µA. This low leakage ensures minimal power loss in always-on systems and avoids unintended biasing of high-impedance sensor or reference circuits connected to the protected node.
How does JANTX1N6172US/TR differ from the commercial 1N6172AUS version?
JANTX1N6172US/TR undergoes full MIL-PRF-19500/516 JANTX-level screening including temperature cycling, steady-state life test, and surge validation - with full traceability and certification documentation. The commercial 1N6172AUS shares identical electrical specs but lacks military screening, has tin/lead plating only (no RoHS option), and carries no qualification pedigree - making it unsuitable for deployed defense or space hardware.
JANTX1N6172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 136.8V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 245.7V
- Current - Peak Pulse (10/1000µs):
- 6.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTX1N6172US/TR FAQ
1.How can I place an order for JANTX1N6172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6172US/TR reliable?
The price and inventory of JANTX1N6172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6172US/TR is usually 5 days.
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JANTX1N6172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6172US/TR?
For technical support, including JANTX1N6172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6172US/TR requirements.
6.How does Aetrix verify that JANTX1N6172US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6172US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6172US/TR?
All JANTX1N6172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6172US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6172US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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