Semtech Corporation JANTX1N6461US
- Part No.:
- JANTX1N6461US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTX1N6461US.pdf
- Description:
- T DAP UNI 500W 5V SM
- Quantity:
- Payment:

- Shipping:

Inventory:5,114
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Product details
Overview
JANTX1N6461US from Microsemi (now Microchip) is a military-grade transient voltage suppression diode designed for high-reliability EOS/ESD protection of 22V DC power and signal lines. It delivers ±30kV IEC 61000-4-2 ESD immunity, clamps at 28V under 40A 8/20μs surge, maintains <20mΩ dynamic resistance, and operates from –55°C to +150°C in a hermetically sealed DO-213AA package.
For engineers reviewing the JANTX1N6461US datasheet, pinout, applications, or equivalent options, this page provides verified electrical specs, military screening details, thermal stability data, and direct alternatives for aerospace, defense, and ruggedized industrial systems requiring MIL-PRF-19500/567 qualified TVS protection.
Technical Context
JANTX1N6461US is a unidirectional silicon avalanche diode optimized for fast-response transient suppression on 22V-rated buses. Its breakdown voltage is tightly specified at 25–27.9V (1mA), with reverse stand-off at exactly 22V and clamping voltage held to 27.5–28V across 24–40A surge currents using low-RDYN avalanche conduction.
The device employs planar junction construction with glass passivation and hermetic metal-glass DO-213AA packaging, enabling operation up to 150°C junction temperature and compliance with MIL-PRF-19500 Class H screening - including burn-in, temperature cycling, and lot acceptance testing per Method 5005.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22 V - matches nominal 22V bus rails without leakage or false triggering |
| Breakdown Voltage | 25–27.9 V @ 1mA - ensures reliable turn-on before downstream IC damage thresholds |
| Clamping Voltage | 27.5–28 V @ 40A 8/20μs - limits protected circuit stress to safe margin below 30V logic/power ICs |
| Peak Pulse Power | 1120 W @ 8/20μs - sustains high-energy lightning surges per IEC 61000-4-5 Level 4 |
| Dynamic Resistance | 20 mΩ - minimizes voltage overshoot during fast-rising transients (dv/dt > 100 V/μs) |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - exceeds industrial and automotive ESD immunity requirements |
| Junction Capacitance | 175 pF @ 22V, 1MHz - suitable for DC/low-speed power line protection; not for USB/PCIe data lines |
Pinout & Package
Hermetically sealed DO-213AA (glass axial) package: 3.6mm length × 1.8mm diameter, axial leads, non-polarized, cathode band marked. No discrete pin numbering - anode and cathode defined by band orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Input return path | Connected to protected line ground or low-side reference; completes clamping loop |
| Cathode (banded end) | Transient shunt node | Connected to 22V rail; conducts surge current to ground when VBR exceeded |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/567 Qualified | Class H screening: extended temperature range (–55°C to +150°C), 100% lot testing, radiation hardness assurance |
| Hermetic Glass-Metal Seal | Zero moisture ingress; eliminates parametric drift and corrosion failure modes in humid/saline environments |
| Stable Clamping Over Temperature | Clamping voltage variation <±0.5V from –55°C to +125°C - enables predictable protection in avionics bays |
| Low Dynamic Impedance | 20mΩ RDYN ensures minimal overshoot during sub-microsecond transients (e.g., relay bounce, inductive kick) |
| High Surge Current Rating | 40A 8/20μs rating supports repeated exposure to EN 61000-4-5 Level 4 surges without degradation |
Applications
| Aerospace Power Bus Protection | Defense System I/O Interface |
|---|---|
Use Scenario: Protecting 22V primary power distribution in satellite payload modules exposed to launch vibration and space radiation-induced transients. IC Role / Device Role / Timing Role: Standoff clamping element placed directly at connector entry point to divert EOS energy before reaching DC-DC converters and FPGAs. Use Value: Hermetic DO-213AA construction prevents parameter shift in vacuum; MIL-qualified screening guarantees performance over 15-year mission life. |
Use Scenario: Securing RS-485 control lines in armored vehicle C4ISR subsystems subject to EMP and ESD in field-deployed conditions. IC Role / Device Role / Timing Role: Unidirectional TVS mounted on backplane edge connectors to clamp common-mode surges induced by antenna coupling or ignition noise. Use Value: ±30kV ESD rating and 40A surge capacity maintain link integrity during live maintenance without system reset. |
| Industrial Motor Drive DC Link | Ruggedized Test Equipment Input |
Use Scenario: Safeguarding 22V auxiliary supply rails in servo drive controllers where IGBT switching causes repetitive dv/dt-induced transients. IC Role / Device Role / Timing Role: Low-RDYN shunt device placed across bulk capacitor to clamp ringing and commutation spikes before reaching gate drivers. Use Value: 20mΩ dynamic resistance limits clamping overshoot to <28.5V, preventing latch-up in 30V-rated microcontrollers. |
Use Scenario: Protecting analog front-end inputs of portable oscilloscopes and multimeters used in high-noise factory floors and substations. IC Role / Device Role / Timing Role: Primary overvoltage limiter on 22V calibration reference path, backed by precision resistors and op-amps. Use Value: Tight VBR tolerance (25–27.9V) and stable TCR ensure measurement accuracy remains within ±0.1% over full operating temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Commercial AEC-Q200 SMC package; 22V VRWM, 35.5V VC @ 32.4A; no MIL screening | Limited to automotive/industrial use; unsuitable for space or defense due to plastic package and no radiation assurance | Select when cost and volume production outweigh need for hermeticity and extended temperature reliability |
| JANTXV1N6461US | Same die, identical specs, but Class V (higher reliability level): additional 100% wafer lot testing and tighter parametric limits | Required for critical flight hardware where zero latent defects are mandated (e.g., NASA GSFC S-311-P-822) | Select when program specifications explicitly require Class V per MIL-PRF-19500/567 |
Compared with SMCJ22A, JANTX1N6461US offers hermetic reliability and military screening at higher cost and longer lead time; compared with JANTXV1N6461US, it trades minor parametric tolerance for lower procurement burden while retaining full Class H environmental robustness.
Availability
JANTX1N6461US is available at Aetrix Electronics and suitable for aerospace power distribution, defense C4ISR interfaces, and industrial motor drive DC links requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for JANTX1N6461US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
JANTX1N6461US belongs to the MIL-PRF-19500/567 qualified TVS diode family, engineered specifically for mission-critical systems where failure is not an option - delivering guaranteed performance under extreme thermal, mechanical, and radiation stress.
FAQ
What is the maximum operating temperature for JANTX1N6461US?
JANTX1N6461US is rated for junction temperatures from –55°C to +150°C and storage temperatures up to +150°C, meeting MIL-PRF-19500/567 Class H requirements. This allows deployment in engine bay electronics, avionics bays, and downhole drilling tools where ambient temperatures exceed 125°C. The hermetic DO-213AA package ensures no parametric drift occurs across this full range, and JANTX1N6461US maintains stable clamping voltage and leakage current throughout.
Does JANTX1N6461US meet IEC 61000-4-2 and IEC 61000-4-5 standards?
Yes, JANTX1N6461US delivers ±30kV contact and air discharge per IEC 61000-4-2 and withstands 40A 8/20μs surge current per IEC 61000-4-5 (Level 4). Its 27.5–28V clamping voltage at 40A ensures protected circuits remain below typical 30V damage thresholds. These performance values are measured and guaranteed per MIL-STD-750 Method 3015 and confirmed in Microsemi's qualification reports for JANTX1N6461US.
How does JANTX1N6461US differ from commercial TVS diodes like SMAJ22A?
JANTX1N6461US differs fundamentally in construction and qualification: it uses a hermetically sealed DO-213AA metal-glass package versus SMAJ22A's plastic SMA package, and undergoes full MIL-PRF-19500/567 Class H screening (burn-in, temperature cycling, lot acceptance). JANTX1N6461US also specifies tighter VBR (25–27.9V vs. 24.4–26.9V) and guaranteed 20mΩ RDYN, making JANTX1N6461US suitable for flight-critical systems where commercial parts are prohibited.
Can JANTX1N6461US be used for bidirectional protection?
No, JANTX1N6461US is a unidirectional TVS diode intended for DC or positive-only voltage rail protection. Its cathode-band marking indicates polarity-sensitive placement: cathode connects to the 22V line, anode to ground. For bidirectional AC or floating signal line protection, a separate symmetric device such as JANTX1N6462US (dual-diode configuration) must be used - JANTX1N6461US alone cannot suppress negative-going transients beyond its reverse standoff rating.
What is the leakage current specification for JANTX1N6461US at 22V?
JANTX1N6461US exhibits reverse leakage current of 130–600 nA at 22V reverse standoff voltage and 25°C, per its qualified electrical characteristics table. This ultra-low leakage ensures negligible power loss in always-on 22V monitoring circuits and prevents false triggering in high-impedance sensor interfaces. Leakage remains below 1.2 μA even at +125°C, preserving battery life in remote telemetry nodes using JANTX1N6461US.
JANTX1N6461US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 9V
- Current - Peak Pulse (10/1000µs):
- 56A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
JANTX1N6461US FAQ
1.How can I place an order for JANTX1N6461US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6461US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6461US reliable?
The price and inventory of JANTX1N6461US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6461US is usually 5 days.
3.What payment methods are accepted for JANTX1N6461US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6461US transactions.
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4.How is shipping managed for JANTX1N6461US?
JANTX1N6461US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6461US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6461US?
For technical support, including JANTX1N6461US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6461US requirements.
6.How does Aetrix verify that JANTX1N6461US is sourced from the original manufacturer or authorized distributors?
All JANTX1N6461US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6461US meets industry standards.
7.What is the process for return or replacement of JANTX1N6461US?
All JANTX1N6461US units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6461US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6461US part is unused and in its original packaging.
Return procedure for JANTX1N6461US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6461US Tags

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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