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Microchip Technology JANTX1N6476US/TR
- Part No.:
- JANTX1N6476US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTX1N6476US/TR.pdf
- Description:
- UNI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,148
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Product details
Overview
JANTX1N6476US/TR from Microsemi is a military-qualified, voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode in G-MELF (D-5C) package. It provides 51.6 V working peak standoff voltage, 78.5 V maximum clamping voltage at 107 A peak pulse current (10/1000 µs), and 1500 W peak pulse power for high-reliability surge protection in avionics power rails.
For engineers reviewing the JANTX1N6476US/TR datasheet, JANTX1N6476US/TR pinout, JANTX1N6476US/TR application, or JANTX1N6476US/TR equivalent, key selection criteria include its MIL-PRF-19500/552 qualification, -55°C to +175°C operating temperature range, Category I metallurgical bond, IEC61000-4-2/4-4/4-5 compliance, and hermetic glass construction for radiation-hardened environments.
Technical Context
This unidirectional TVS operates as a clamping device triggered above its 54.0 V minimum breakdown voltage (IBR = 1 mA), maintaining a stable 51.6 V standoff until transient onset. Its hard-glass hermetic seal and tungsten slug construction enable operation up to +175°C with 20.0 °C/W junction-to-end-cap thermal resistance.
The device delivers 1500 W peak pulse power under 10/1000 µs waveform, clamping at 78.5 V while sustaining 107 A peak pulse current. It exhibits +0.103 %/°C temperature coefficient of VBR and meets MIL-STD-750 Method 1020 for ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51.6 V maximum working peak voltage - defines max continuous DC or peak AC voltage before conduction begins |
| VBR (min) | 54.0 V at 1 mA - ensures reliable turn-on margin above standoff, critical for precision overvoltage thresholding |
| VC | 78.5 V at 107 A (10/1000 µs) - limits downstream voltage stress during lightning-level transients |
| PPP | 1500 W - supports high-energy surges without thermal runaway in aerospace power conditioning |
| IPP | 107 A peak pulse current (10/1000 µs) - enables protection against IEC61000-4-5 Level 3/4 surges |
| TOP/TSTG | -55°C to +175°C - allows deployment in engine-mounted or space-grade electronics without derating |
| Leakage (ID) | 5 µA max at VWM - minimizes standby power loss in battery-backed systems |
Pinout & Package
Package: G-MELF (D-5C) - hermetically sealed voidless hard-glass cylindrical package with copper end caps, tin/lead finish, cathode band marking, and square-end-cap terminals for surface-mount reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient return path | Connected to ground or low-impedance reference; carries full surge current during clamping |
| Cathode | Protected line input | Connected to line being protected (e.g., 28 VDC avionics bus); polarity-marked band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and voids, ensuring long-term reliability in vacuum or high-humidity military environments |
| Category I metallurgical bond | Internal tungsten-copper bond structure qualified for mission-critical applications per MIL-PRF-19500/552 |
| Triple-layer passivation | Enhances surface insulation integrity and prevents leakage path formation under high humidity or contamination |
| MIL-PRF-19500/552 qualification | Validated for JAN/TX/TXV screening levels including burn-in, temperature cycling, and life test per military standard |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per MicroNote 050 - suitable for low-earth orbit electronics |
Applications
| Avionics Power Bus Protection | Spacecraft Power Distribution |
|---|---|
Use Scenario: Protecting 28 VDC primary distribution buses in fighter jet flight control systems from load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between bus and chassis ground to limit transient overvoltage to <78.5 V. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs during MIL-STD-461G CS115 pulses. | Use Scenario: Safeguarding solar array regulator inputs on LEO satellites exposed to electrostatic discharge and single-event transients. IC Role / Device Role / Timing Role: Standoff-clamp protector on unregulated PV bus, leveraging radiation-hardened construction and -55°C to +175°C rating. Use Value: Maintains protection integrity after >100 krad(Si) TID exposure without parameter shift or leakage increase. |
| Ground Vehicle Engine Control | Nuclear Instrumentation Systems |
Use Scenario: Shielding ECU power inputs in armored vehicle diesel engines from alternator load dump spikes exceeding 100 V. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 24 V supply rail, mounted directly at connector entry point. Use Value: Withstands 130 A forward surge (8.33 ms half-sine) and clamps within 100 ns to protect automotive-grade microcontrollers. | Use Scenario: Securing analog front-end inputs of reactor monitoring sensors in high-radiation containment zones. IC Role / Device Role / Timing Role: Transient limiter on signal conditioning amplifier supply, selected for zero parametric drift under neutron flux. Use Value: Delivers stable 51.6 V standoff and <5 µA leakage even after 1×1014 n/cm² fluence per MIL-STD-883 TM1019. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ51A | Plastic SMC package; 51 V VWM, 81.5 V VC @ 112 A; not hermetically sealed | Lacks MIL-PRF-19500 qualification, radiation hardness, and -55°C to +175°C rating | Use where cost and commercial volume outweigh military reliability requirements |
| JANTX1N6475US/TR | 40.3 V VWM, 63.5 V VC @ 135 A; same G-MELF package and MIL-PRF-19500/552 qualification | Lower clamping voltage but reduced standoff - suited for 36 V nominal systems instead of 48–60 V rails | Select when system operating voltage requires tighter VWM margin below 51.6 V |
Compared with SMCJ51A and JANTX1N6475US/TR, JANTX1N6476US/TR uniquely combines 51.6 V standoff, 78.5 V clamping, hermetic G-MELF packaging, and full MIL-PRF-19500/552 screening - making it irreplaceable for 48–60 V avionics and nuclear-grade transient suppression where failure is not an option.
Availability
JANTX1N6476US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, spacecraft power distribution, and nuclear instrumentation systems requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTX1N6476US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N6476US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for voidless-hermetic, radiation-tolerant transient suppression in mission-critical power and signal lines.
FAQ
What is the maximum clamping voltage of JANTX1N6476US/TR under standard test conditions?
JANTX1N6476US/TR has a maximum clamping voltage (VC) of 78.5 V when subjected to a 10/1000 µs transient waveform at 107 A peak pulse current. This value is measured per MIL-STD-750 Method 3019 and guarantees predictable overvoltage limiting for downstream circuitry. The JANTX1N6476US/TR maintains this clamping performance across its full -55°C to +175°C operating range.
Is JANTX1N6476US/TR qualified to MIL-PRF-19500/552, and what does that entail?
Yes, JANTX1N6476US/TR is fully qualified to MIL-PRF-19500/552 as a JANTX-grade device. This includes screening for burn-in, temperature cycling, steady-state life test, and mechanical shock per the specification. The JANTX1N6476US/TR also features Category I internal metallurgical bonds and triple-layer passivation - all verified during qualification. These tests ensure suitability for Class H and Class K applications where failure is unacceptable.
What package type does JANTX1N6476US/TR use, and why is it significant?
JANTX1N6476US/TR uses the G-MELF (D-5C) package: a voidless-hermetically-sealed hard-glass cylinder with tungsten slugs and copper end caps. This construction eliminates moisture ingress and internal voids, enabling operation at +175°C and resistance to thermal shock. The JANTX1N6476US/TR's hermetic seal is essential for long-term reliability in vacuum, high-humidity, or radiation-intensive environments where plastic-packaged alternatives would degrade.
Does JANTX1N6476US/TR meet IEC61000-4-5 for lightning surge immunity?
JANTX1N6476US/TR provides secondary lightning protection per select levels of IEC61000-4-5, validated by its 1500 W peak pulse power rating and 78.5 V clamping voltage at 107 A. While not certified as a standalone system-level solution, the JANTX1N6476US/TR is routinely deployed in conjunction with upstream filters and gas discharge tubes to achieve Level 3 (2 kV line-to-ground) and Level 4 (4 kV line-to-ground) immunity in avionics and ground vehicle systems.
How does the temperature coefficient of breakdown voltage affect JANTX1N6476US/TR performance?
JANTX1N6476US/TR has a VBR temperature coefficient of +0.103 %/°C, meaning its breakdown voltage increases linearly with junction temperature. At +125°C, VBR rises ~10.7 V above its 25°C value - preserving safe margin above the 51.6 V VWM. This positive coefficient ensures stable, non-catastrophic behavior under thermal stress, a critical design attribute confirmed in Microsemi MicroNote 050 for the JANTX1N6476US/TR family.
JANTX1N6476US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51.6V
- Voltage - Breakdown (Min):
- 54V
- Voltage - Clamping (Max) @ Ipp:
- 78.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TA)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
JANTX1N6476US/TR FAQ
1.How can I place an order for JANTX1N6476US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6476US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6476US/TR reliable?
The price and inventory of JANTX1N6476US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6476US/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N6476US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6476US/TR transactions.
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4.How is shipping managed for JANTX1N6476US/TR?
JANTX1N6476US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6476US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6476US/TR?
For technical support, including JANTX1N6476US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6476US/TR requirements.
6.How does Aetrix verify that JANTX1N6476US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6476US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6476US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6476US/TR?
All JANTX1N6476US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6476US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6476US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6476US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6476US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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