Microchip Technology JANTXV1N5630A

Overview

JANTXV1N5630A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military and aerospace applications. It features 6.45 V minimum breakdown voltage (V_BR), 6.40 V rated standoff voltage (V_WM), 11.3 V maximum clamping voltage (V_C) at 132 A peak pulse current, and 1500 W peak pulse power rating per 10/1000 µs waveform - used primarily to protect avionics power rails and signal lines against ESD, EFT, and secondary lightning surges.

For engineers reviewing the JANTXV1N5630A datasheet, JANTXV1N5630A pinout, JANTXV1N5630A application, or JANTXV1N5630A equivalent, key selection criteria include its MIL-PRF-19500/500 qualified JANTXV grade, hermetic DO-13 package, sub-100 ps response time, -55°C to +175°C operating range, and IEC 61000-4-2/4-4/4-5 compliance in low-impedance surge environments.

Technical Context

The JANTXV1N5630A operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its 6.45–7.14 V V_BR range at 10 mA test current. Its clamping action limits transient voltage to ≤11.3 V at 132 A IPP, enabling robust protection of 5 V–6.4 V nominal circuits without latch-up or thermal runaway.

Designed for through-hole mounting in high-radiation, high-temperature environments, it leverages a welded, hermetically sealed DO-13 (DO-202AA) metal-glass package with cathode-to-case polarity and tin-lead plating per MIL-STD-750. Its 0.061 %/°C temperature coefficient of V_BR ensures stable breakdown behavior across its full -55°C to +175°C operational range.

Key Specifications

Pinout & Package

Hermetically sealed DO-13 (DO-202AA) metal-glass package with axial leads; cathode terminal electrically connected to case and marked with diode symbol on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with 1N5630A and JANTXV1N5631A, the JANTXV1N5630A uniquely balances 6.4 V standoff compatibility with full military screening and radiation tolerance - making it the only option qualified for flight-critical, high-temperature, and long-duration airborne deployments.

Availability

JANTXV1N5630A is available at Aetrix Electronics and suitable for aircraft power distribution, avionics signal line protection, and military vehicle control systems requiring stable component supply, traceable lot history, and long-term obsolescence mitigation.

Supply support for JANTXV1N5630A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete product portfolio, including radiation-hardened and military-qualified components for aerospace, defense, and industrial markets.

The JANTXV1N5630A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for mission-critical surge protection - engineered specifically for avionics, missile guidance, and satellite subsystems demanding hermetic sealing and extended temperature resilience.

FAQ

What is the standoff voltage (V_WM) specification for JANTXV1N5630A?

The JANTXV1N5630A has a rated standoff voltage (V_WM) of 6.40 V, meaning it remains nonconductive up to this reverse voltage at 25°C. This value is selected to provide sufficient margin above typical 5 V system rails while ensuring reliable clamping onset during transients. The JANTXV1N5630A's V_WM is verified per MIL-PRF-19500/500 testing and remains stable across its full -55°C to +175°C operating range.

Is JANTXV1N5630A suitable for ESD protection per IEC 61000-4-2?

Yes, the JANTXV1N5630A is explicitly validated for ESD protection per IEC 61000-4-2 due to its sub-100 ps response time and ability to clamp transients to ≤11.3 V at 132 A. Its hermetic DO-13 package and low leakage (<500 µA at V_WM) ensure consistent performance across repeated 8 kV contact and 15 kV air discharge events. The JANTXV1N5630A is routinely deployed on avionics data lines where ESD immunity is mandatory.

What is the peak pulse current (I_PP) rating for JANTXV1N5630A?

The JANTXV1N5630A supports a maximum peak pulse current (I_PP) of 132 A under the standard 10/1000 µs double-exponential waveform. This rating is derived from its 1500 W peak pulse power capability and 11.3 V clamping voltage (V_C). The JANTXV1N5630A maintains this rating at lead temperature (T_L) = 25°C and derates linearly above that point per Figure 4 in the official datasheet.

Does JANTXV1N5630A have radiation hardness certification?

Yes, the JANTXV1N5630A is inherently radiation hard per Microsemi MicroNote 050 and qualified to MIL-PRF-19500/500 Class V standards, which include total ionizing dose (TID) and single-event effects (SEE) testing. This radiation tolerance is a direct result of its hermetic DO-13 metal-glass construction and process-controlled silicon die. The JANTXV1N5630A is approved for use in satellites, UAVs, and nuclear-hardened ground systems.

What package type does JANTXV1N5630A use, and is it lead-free?

The JANTXV1N5630A uses the DO-13 (DO-202AA) hermetically sealed metal-glass package with tin-lead (SnPb) plating per MIL-STD-750 Method 2026. It is not RoHS-compliant or lead-free; the SnPb finish ensures solderability at 260°C for 10 seconds and long-term intermetallic stability in high-reliability assemblies. The JANTXV1N5630A's case serves as the cathode terminal and must be grounded to function correctly.