My Inquiry
My Account
Microchip Technology JANTXV1N5632A
- Part No.:
- JANTXV1N5632A
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- DO-202AA, DO-13, Axial
- Datasheet:
-
JANTXV1N5632A.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO13
- Quantity:
- Payment:
- Shipping:
Inventory:8,909
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N5632A from Microchip Technology is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability military avionics and aerospace systems. It features 7.37 V rated standoff voltage (VWM), 8.19–8.65 V breakdown voltage (V(BR)) at 1 mA, and clamps transients to ≤13.4 V at 112 A peak pulse current (IPP), delivering 1500 W peak pulse power for 10/1000 µs waveform.
For engineers reviewing the JANTXV1N5632A datasheet, JANTXV1N5632A pinout, JANTXV1N5632A application, or JANTXV1N5632A equivalent, this part serves as a MIL-PRF-19500/500 qualified, radiation-hardened protection device for inductive switching transients, ESD per IEC 61000-4-2, EFT per IEC 61000-4-4, and secondary lightning surges per IEC 61000-4-5 with 2–42 Ω source impedance.
Technical Context
The JANTXV1N5632A operates as a unidirectional avalanche diode, entering controlled breakdown when reverse voltage exceeds its V(BR) threshold, thereby shunting surge energy away from sensitive circuitry. Its hermetic DO-13 metal-glass package ensures stable performance across -55°C to +175°C operating temperature range and inherent radiation hardness per MicroNote 050.
It delivers 1500 W non-repetitive peak pulse power under 10/1000 µs waveform with <100 ps response time, and exhibits a +0.068 %/°C temperature coefficient of V(BR), enabling predictable clamping behavior over wide thermal excursions in harsh environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.37 V - Maximum continuous reverse operating voltage before conduction; sets minimum system bus voltage compatibility. |
| V(BR) @ I(BR) | 8.19–8.65 V @ 1 mA - Confirmed avalanche onset range; defines precise turn-on threshold for transient suppression. |
| VC @ IPP | ≤13.4 V @ 112 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on protected ICs. |
| PPP | 1500 W - Peak pulse power handling capability; enables robust protection against high-energy transients. |
| ID @ VWM | ≤50 µA - Leakage current at rated standoff; ensures minimal standby power loss and signal integrity. |
| αV(BR) | +0.068 %/°C - Temperature coefficient of breakdown voltage; supports accurate derating in thermal design. |
| Package | DO-13 (DO-202AA) - Hermetically sealed metal-glass through-hole package; provides MIL-spec reliability and thermal robustness. |
Pinout & Package
Hermetic DO-13 (DO-202AA) metal-glass package with cathode connected to case; polarity marked by diode symbol on body; leads tin-lead plated per MIL-STD-750 Method 2026.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input node for protected line | Connected to signal/power rail requiring transient protection; reverse-biased during normal operation. |
| Cathode | Ground reference / surge return path | Internally bonded to metal case; must be connected to low-impedance ground plane for effective clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional TVS architecture | Enables selective protection of DC-biased lines without interfering with forward conduction paths. |
| 1500 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive loads or lightning-induced surges without failure. |
| <100 ps response time | Clamps ESD events before downstream logic or analog circuits experience damaging voltage overshoot. |
| MIL-PRF-19500/500 JANTXV qualification | Meets stringent screening, testing, and traceability requirements for defense and space applications. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for high-altitude avionics and satellite subsystems. |
Applications
| Aerospace Avionics Power Bus Protection | Defense Vehicle Control Interface |
|---|---|
|
Use Scenario: Protecting 28 V DC power distribution networks in fighter aircraft flight control computers from load dump and relay switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus rail and chassis ground to limit voltage excursions to safe levels during 1500 W surges. Use Value: Prevents latch-up or permanent damage to FPGAs and microcontrollers exposed to >100 V transients, ensuring mission-critical system continuity. |
Use Scenario: Shielding CAN and RS-485 communication ports in armored vehicle electronic control units from EFT bursts and induced RF coupling. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on differential data lines to absorb 4 kV EFT pulses per IEC 61000-4-4 without signal distortion. Use Value: Maintains data integrity during electromagnetic warfare conditions while preserving bit error rate below 10⁻¹². |
| Spacecraft Secondary Lightning Protection | Tactical Radio Front-End Surge Suppression |
|
Use Scenario: Mitigating secondary lightning-induced surges (IEC 61000-4-5, 42 Ω source) on satellite payload telemetry interfaces. IC Role / Device Role / Timing Role: High-reliability DO-13 TVS deployed at board-level entry points to divert 112 A peak currents within 100 ps. Use Value: Achieves Class 1 compliance for 42 Ω IEC 61000-4-5 testing while maintaining hermetic seal integrity over 15-year orbital lifetime. |
Use Scenario: Safeguarding HF/VHF receiver front-end amplifiers in manpack radios from antenna-coupled ESD and nearby lightning strikes. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp on RF input path to prevent gate oxide rupture in GaAs FETs. Use Value: Limits clamping voltage to 13.4 V, keeping RF stage bias within safe operating area during 8 kV contact ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5631A | VWM = 6.63 V, VC = 12.1 V @ 124 A - lower standoff and clamping voltage. | Better suited for 5–6 V logic rails; less margin for 28 V systems with ripple. | Select when protecting lower-voltage digital interfaces where tighter VWM tolerance is required. |
| JANTXV1N5633A | VWM = 8.10 V, VC = 14.5 V @ 103 A - higher standoff, slightly reduced peak current rating. | Preferred for 12 V automotive-derived subsystems needing higher VWM headroom. | Choose for applications requiring ≥8 V standoff with relaxed peak current demands. |
Compared with JANTXV1N5631A and JANTXV1N5633A, the JANTXV1N5632A offers optimal balance of 7.37 V VWM and 112 A IPP for 28 V avionics buses-providing sufficient margin above nominal voltage while sustaining higher surge current than the next-higher VWM variant.
Availability
JANTXV1N5632A is available at Aetrix Electronics and suitable for aerospace avionics, defense vehicle electronics, spacecraft telemetry systems, and tactical radio designs requiring stable component supply under extended qualification and traceability mandates.
Supply support for JANTXV1N5632A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The JANTXV1N5632A belongs to Microchip's legacy MIL-qualified TVS diode family, engineered specifically for survivability in extreme electromagnetic environments-including lightning, ESD, and nuclear-induced transients-where failure is not an option.
FAQ
What is the maximum clamping voltage of the JANTXV1N5632A under standard test conditions?
The JANTXV1N5632A has a maximum clamping voltage (VC) of 13.4 V when subjected to its rated 112 A peak pulse current (IPP) under the 10/1000 µs waveform. This value is measured at TA = 25°C and defines the upper voltage limit imposed on protected circuitry during surge events, ensuring downstream components remain within safe operating voltage ranges.
Is the JANTXV1N5632A suitable for IEC 61000-4-5 secondary lightning testing?
Yes, the JANTXV1N5632A is validated for IEC 61000-4-5 secondary lightning protection across multiple classes: it meets Class 1 with 42 Ω source impedance, Class 2 with 12 Ω, and Class 2 with 2 Ω source impedance. Its 1500 W peak pulse rating and sub-100 ps response enable reliable pass/fail performance in standardized surge immunity tests.
Does the JANTXV1N5632A have radiation hardness certification?
Yes, the JANTXV1N5632A exhibits inherent radiation hardness per Microsemi MicroNote 050. While not individually tested per MIL-STD-883 method 1019, its DO-13 hermetic construction and silicon process are qualified for total ionizing dose (TID) resilience in high-altitude and space environments, supporting use in avionics and satellite subsystems.
What is the operating temperature range for the JANTXV1N5632A?
The JANTXV1N5632A operates across -55°C to +175°C, verified per MIL-PRF-19500/500 screening. This extended range accommodates engine bay, radar pod, and exoatmospheric deployments where thermal cycling and sustained high ambient temperatures challenge conventional TVS devices.
How does the JANTXV1N5632A differ from commercial-grade 1N5632A?
The JANTXV1N5632A differs from the commercial 1N5632A through full MIL-PRF-19500/500 qualification: it undergoes rigorous lot acceptance testing, burn-in, hermeticity verification, and traceable lot documentation. Electrically identical, it adds guaranteed performance over temperature, radiation tolerance, and long-term reliability for mission-critical systems where the commercial variant is not approved.
JANTXV1N5632A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- DO-202AA, DO-13, Axial
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 112A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/500
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-13 (DO-202AA)
JANTXV1N5632A FAQ
1.How can I place an order for JANTXV1N5632A through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5632A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5632A reliable?
The price and inventory of JANTXV1N5632A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5632A is usually 5 days.
3.What payment methods are accepted for JANTXV1N5632A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5632A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5632A?
JANTXV1N5632A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5632A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5632A?
For technical support, including JANTXV1N5632A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5632A requirements.
6.How does Aetrix verify that JANTXV1N5632A is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5632A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5632A meets industry standards.
7.What is the process for return or replacement of JANTXV1N5632A?
All JANTXV1N5632A units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5632A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5632A part is unused and in its original packaging.
Return procedure for JANTXV1N5632A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5632A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
