Microchip Technology JANTXV1N5639A

Overview

JANTXV1N5639A from Microchip Technology is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military systems. It features 1500 W peak pulse power (10/1000 µs), 16.2 V minimum breakdown voltage (V_BR), and clamps transients to ≤26.5 V at 56.5 A peak pulse current (I_PP). It operates across –55 °C to +175 °C and is used for secondary lightning protection in avionics power rails.

For engineers reviewing the JANTXV1N5639A datasheet, JANTXV1N5639A pinout, JANTXV1N5639A application, or JANTXV1N5639A equivalent, key selection criteria include standoff voltage (14.5 V), clamping performance under IEC61000-4-5 with 42 Ω source impedance (Class 1–4), radiation hardness per MicroNote 050, and hermetic DO-13 packaging for harsh-environment reliability.

Technical Context

The JANTXV1N5639A is a unidirectional avalanche diode optimized for fast transient suppression in high-temperature, high-reliability circuits. Its breakdown voltage range (16.2–19.8 V) and tight tolerance (±5% for "A" suffix) ensure precise standoff margin above 14.5 V rated working voltage (V_WM), while its <100 ps response time enables ESD protection per IEC61000-4-2.

It delivers 1500 W peak pulse power at T_L = 25 °C with 10/1000 µs waveform and exhibits a temperature coefficient of 0.088 %/°C for V_BR. Its cathode-is-case construction and tin-lead plating comply with MIL-STD-750 method 2026, supporting soldering up to 260 °C for 10 s.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically bonded to case and marked with diode symbol on body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JANTXV1N5639A, JANTXV1N5638A offers lower clamping for 12 V applications but insufficient standoff for 28 V rails, while JANTXV1N5640A extends operational margin to 30 V systems at the cost of higher clamping voltage-requiring careful review of downstream IC voltage tolerances.

Availability

JANTXV1N5639A is available at Aetrix Electronics and suitable for avionics power bus protection, ground vehicle control modules, and satellite power conditioning requiring stable component supply, long-term obsolescence management, and traceable military-grade sourcing.

Supply support for JANTXV1N5639A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology (formerly Microsemi) is a U.S.-based semiconductor manufacturer specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

The JANTXV1N5639A belongs to Microchip's legacy military-qualified TVS diode family, engineered specifically for survivability in extreme electromagnetic and thermal environments encountered in flight-critical and space-based electronics.

FAQ

What is the standoff voltage (V_WM) of the JANTXV1N5639A?

The JANTXV1N5639A has a rated standoff voltage (V_WM) of 14.5 V. This is the maximum continuous reverse voltage at which the device maintains leakage current ≤5 µA, ensuring reliable non-conductive behavior during normal operation while providing sufficient margin above typical 12–15 V system rails. The JANTXV1N5639A is selected for 28 V avionics applications where this V_WM avoids false triggering yet allows effective clamping during transients.

Does the JANTXV1N5639A meet IEC61000-4-5 for lightning surge protection?

Yes, the JANTXV1N5639A is validated for secondary lightning protection per IEC61000-4-5 with 42 Ω, 12 Ω, and 2 Ω source impedances across multiple classes (e.g., Class 1–4 at 42 Ω). Its 1500 W peak pulse rating and 26.5 V clamping voltage at 56.5 A enable compliance in low-to-moderate surge level applications typical of airborne and vehicle-mounted electronics. The JANTXV1N5639A achieves this without derating at elevated temperatures due to its +175 °C max operating limit.

Is the JANTXV1N5639A radiation hardened?

Yes, the JANTXV1N5639A is inherently radiation hard per Microsemi MicroNote 050, a documented characteristic of its silicon process and hermetic DO-13 construction. This makes the JANTXV1N5639A suitable for low-Earth orbit (LEO) satellite power systems and high-altitude avionics where total ionizing dose (TID) and single-event effects (SEE) are design concerns. No additional radiation screening is required beyond standard JANTXV qualification.

What is the package type and mounting configuration of the JANTXV1N5639A?

The JANTXV1N5639A uses a DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads. Its cathode is internally connected to the metal case and marked with a diode symbol on the body; the anode is the isolated lead. This configuration requires mounting with the case electrically tied to chassis ground to achieve optimal clamping performance. The JANTXV1N5639A is intended for through-hole installation with 0.375 inch (10 mm) lead length for thermal management.

How does the JANTXV1N5639A compare to plastic-packaged TVS diodes in reliability-critical applications?

The JANTXV1N5639A's hermetic DO-13 metal package eliminates moisture permeation and outgassing risks inherent in plastic packages, making it suitable for vacuum, high-humidity, and long-life deployments where field failure is unacceptable. Unlike plastic equivalents, the JANTXV1N5639A maintains parameter stability over temperature extremes (–55 °C to +175 °C) and passes rigorous MIL-PRF-19500/500 Class V screening-including thermal shock, life test, and internal visual inspection. This makes the JANTXV1N5639A the preferred choice for flight-critical and space-qualified designs.