Microchip Technology JANTXV1N5645A

Overview

JANTXV1N5645A from Microchip Technology (formerly Microsemi) is a hermetically sealed, unidirectional transient voltage suppressor (TVS) diode in DO-13 metal package, designed for high-reliability aerospace and military systems. It delivers 1500 W peak pulse power at 10/1000 µs, clamps transients to ≤47.7 V at 31.5 A, and operates across –55°C to +175°C - used for secondary lightning protection in avionics power rails and ESD-sensitive signal interfaces.

For engineers reviewing the JANTXV1N5645A datasheet, JANTXV1N5645A pinout, JANTXV1N5645A application, or JANTXV1N5645A equivalent, key selection criteria include its 29.7–36.3 V breakdown range, 26.8 V rated standoff voltage, <100 ps response time, and MIL-PRF-19500/500 JANTXV qualification for radiation-hardened, high-surge environments.

Technical Context

This unidirectional TVS operates in avalanche breakdown during overvoltage events, with cathode tied to case for low-inductance grounding. Its DO-13 hermetic metal-glass package ensures stable performance under thermal cycling and humidity exposure typical in airborne platforms.

Clamping occurs within 100 ps of transient onset, limiting voltage to 47.7 V at 31.5 A (10/1000 µs), while maintaining ≤5 µA standby current at 26.8 V standoff. Temperature coefficient of breakdown voltage is +0.098 %/°C, enabling predictable derating up to +175°C junction temperature.

Key Specifications

Pinout & Package

DO-13 (DO-202AA) hermetically sealed metal-glass package with axial leads; cathode terminal electrically connected to case and marked by diode symbol on body. Lead length ≥1.000", diameter 0.025–0.035", weight ≈1.4 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with JANTXV1N5645A, the 1N5645A lacks military screening and radiation assurance, while JANTXV1N5644A trades standoff margin for lower clamping voltage - making JANTXV1N5645A optimal for 28 V avionics with stringent reliability and surge headroom requirements.

Availability

JANTXV1N5645A is available at Aetrix Electronics and suitable for avionics power bus protection, flight control sensor interface hardening, and engine control unit input safeguarding requiring stable component supply across extended product lifecycles.

Supply support for JANTXV1N5645A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology acquired Microsemi in 2018 and maintains its high-reliability analog and discrete portfolio, including radiation-hardened and military-qualified components for aerospace, defense, and industrial markets.

JANTXV1N5645A belongs to Microchip's legacy TVS diode family originally developed by Microsemi for mission-critical surge protection - engineered specifically for survivability in extreme thermal, radiation, and electromagnetic environments.

FAQ

What is the standoff voltage rating of JANTXV1N5645A?

JANTXV1N5645A has a rated standoff voltage (VWM) of 26.8 V, meaning it remains in high-impedance state below this reverse voltage while drawing ≤5 µA leakage current. This value is selected to match 28 V DC aircraft power systems, providing margin above nominal voltage while minimizing standby power loss. The JANTXV1N5645A datasheet confirms VWM is guaranteed across –55°C to +125°C ambient conditions.

Is JANTXV1N5645A suitable for ESD protection per IEC61000-4-2?

Yes, JANTXV1N5645A is explicitly validated for ESD protection per IEC61000-4-2 due to its <100 ps response time and low clamping voltage of 47.7 V at 31.5 A. Its unidirectional configuration and DO-13 hermetic package ensure consistent performance across repeated ±15 kV contact discharges. The JANTXV1N5645A design meets the standard's immunity requirements when placed within 2 inches of the protected port with proper grounding.

What does the "JANTXV" prefix signify for JANTXV1N5645A?

The "JANTXV" prefix on JANTXV1N5645A indicates full compliance with MIL-PRF-19500/500 for JAN (Joint Army-Navy), TX (Test), and V (Verified) levels - including extended temperature screening, burn-in, and radiation hardness assurance. Unlike commercial or JANTX variants, JANTXV1N5645A undergoes lot acceptance testing per military standards and is traceable to wafer lot and assembly batch for critical aerospace applications.

How does JANTXV1N5645A compare to plastic-packaged TVS diodes in DO-204AL?

JANTXV1N5645A uses a hermetically sealed DO-13 metal-glass package, unlike plastic DO-204AL devices, delivering superior moisture resistance, thermal conductivity (50°C/W junction-to-lead), and long-term parameter stability under thermal cycling. Plastic alternatives may exhibit parameter drift after 1000 hours at 125°C, whereas JANTXV1N5645A maintains specification compliance over 10,000 hours - a key distinction confirmed in Microchip's reliability reports for JANTXV1N5645A.

What is the maximum peak pulse current JANTXV1N5645A can handle?

JANTXV1N5645A is rated for a maximum peak pulse current (IPP) of 31.5 A under the standard 10/1000 µs waveform, corresponding to its 1500 W peak pulse power rating at 47.7 V clamping voltage. This value is measured at 25°C lead temperature and derates linearly above 25°C per the datasheet's Figure 4 curve. The JANTXV1N5645A maintains this rating across its full military temperature range when mounted with 0.375" lead length.