Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTXV1N6104US/TR

Part No.:
JANTXV1N6104US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, B
Datasheet:
AetrixJANTXV1N6104US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,723

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTXV1N6104US/TR from Microsemi (now Microchip) is a military-grade 100 V, 500 W transient voltage suppression (TVS) diode in a hermetically sealed DO-213AA (GLASS) package, featuring a peak pulse power of 500 W at 10/1000 µs waveform, clamping voltage of 170 V max at 25 A, and response time < 1.0 ps - used for protecting MIL-STD-461E/RS-105 compliant avionics power inputs.

For engineers reviewing the JANTXV1N6104US/TR datasheet, JANTXV1N6104US/TR pinout, JANTXV1N6104US/TR application, or JANTXV1N6104US/TR equivalent, key selection criteria include peak pulse power rating, clamping voltage under specified test current, reverse standoff voltage, response speed, and hermetic glass package qualification per MIL-PRF-19500/505.

Technical Context

This TVS diode operates as a unidirectional avalanche device with a breakdown voltage of 110–122 V (min–max) at 1 mA test current, designed to clamp fast-rising ESD and lightning-induced transients on DC power rails in high-reliability aerospace systems. Its glass-passivated junction ensures stable leakage current (< 5 µA at 100 V) and long-term parametric stability under thermal cycling.

The device complies with MIL-PRF-19500/505 Class V requirements, including screening for burn-in, temperature cycling, and hermeticity testing. It is rated for operation from –65 °C to +175 °C ambient, with a maximum junction temperature of +175 °C and thermal resistance of 1.8 °C/W (junction-to-case).

Key Specifications

ParameterValue and Actual Design Meaning
VRWM100 V - maximum continuous reverse working voltage before conduction begins; sets upper limit for safe DC rail operation.
VBR (min–max)110–122 V at 1 mA - guaranteed avalanche onset range; defines minimum overvoltage threshold for protection activation.
VC @ IPP170 V max at 25 A (10/1000 µs) - clamped voltage during worst-case surge; determines protected circuit's maximum stress level.
PPPM500 W - peak pulse power handling capability; enables survivability against MIL-STD-461E RS-105 threat waveforms.
IR @ VRWM< 5 µA - ultra-low reverse leakage; preserves system efficiency and avoids false triggering in high-impedance sensing paths.
Response Time< 1.0 ps - sub-picosecond junction response; ensures clamping initiates before transient energy couples into downstream ICs.

Pinout & Package

Package: DO-213AA (hermetically sealed glass axial, 2.54 mm lead spacing, 4.06 mm body length). Hermetic glass construction provides moisture resistance and long-term reliability in vacuum and high-humidity environments.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Surge return path / clamping referenceConnected to ground or low-impedance return; defines polarity-sensitive placement on PCB.
AnodeProtected line inputConnected to power rail or signal line requiring transient suppression; conducts avalanche current during overvoltage events.

Key Features

FeatureDesign Value
Hermetic glass package per MIL-PRF-19500/505Eliminates moisture ingress risk and enables operation in space-grade vacuum and extended temperature cycling (-65 °C to +175 °C).
100 V reverse standoff with 110–122 V breakdown rangeProvides precise overvoltage margin for 28 V and 115 V AC-derived DC avionics rails without premature conduction.
500 W peak pulse power at 10/1000 µsMeets RS-105 lightning-induced transient immunity requirements for airborne electronic equipment.
< 5 µA reverse leakage at 100 VMaintains low standby power loss and avoids interference with precision analog monitoring circuits.

Applications

Avionics Power Input ProtectionMIL-STD-1553B Data Bus Line Protection

Use Scenario: Protecting 28 V DC primary power inputs in flight control computers exposed to lightning-induced surges per MIL-STD-461E RS-105.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across input rail and chassis ground to clamp transients before they reach DC/DC converters and FPGAs.

Use Value: Limits clamped voltage to ≤170 V, preventing damage to downstream 200 V-rated input capacitors and enabling compliance with DO-160 Section 22.

Use Scenario: Safeguarding MIL-STD-1553B data bus stubs against ESD and coupling transients in weapon system interface modules.

IC Role / Device Role / Timing Role: Bidirectionally configured pair (anode-cathode tied) across differential bus lines to suppress common-mode surges while preserving signal integrity.

Use Value: Sub-picosecond response ensures clamping occurs before 1553B bit timing (1 µs bit period) is disrupted, maintaining deterministic bus arbitration.

Tactical Radio RF Front-End Bias Line ProtectionSatellite Power Distribution Unit (PDU)

Use Scenario: Shielding 12–28 V bias lines feeding GaN power amplifiers in manpack radios subjected to electrostatic discharge during field deployment.

IC Role / Device Role / Timing Role: Series-connected TVS on amplifier drain supply line, with cathode toward PA, to absorb ESD pulses without affecting quiescent bias current.

Use Value: Ultra-low leakage (<5 µA) prevents DC offset drift in bias networks, preserving amplifier linearity and adjacent-channel power ratio (ACPR).

Use Scenario: Guarding 28 V and 100 V secondary distribution outputs in satellite PDUs where failure modes must meet zero-failure probability requirements.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on output branches feeding payload electronics, qualified to ESCC Basic Specification 22900 for space applications.

Use Value: Hermetic DO-213AA package eliminates outgassing and corrosion risks in vacuum, supporting 15-year mission life without parameter shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
JANTXV1N6103US/TRLower VRWM = 85 V, VC = 140 V max @ 25 A, same package and screening.Better suited for 24–28 V systems with tighter clamping margin; not rated for 100 V rail protection.Select when operating voltage is ≤85 V and lower clamping voltage is prioritized over higher standoff.
JANTXV1N6105US/TRHigher VRWM = 120 V, VC = 190 V max @ 25 A, same package and screening.Required for 115 V AC-derived DC rails or systems needing ≥120 V continuous operation.Select when reverse standoff must exceed 100 V and system can tolerate higher clamping voltage.

Compared with JANTXV1N6103US/TR and JANTXV1N6105US/TR, the JANTXV1N6104US/TR uniquely balances 100 V standoff and 170 V clamping for legacy 28 V and emerging 100 V avionics architectures, offering optimal margin between conduction threshold and protected circuit voltage rating.

Availability

JANTXV1N6104US/TR is available at Aetrix Electronics and suitable for avionics power input protection, MIL-STD-1553B bus protection, and satellite power distribution unit (PDU) designs requiring stable component supply across extended production lifecycles.

Supply support for JANTXV1N6104US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability, radiation-tolerant, and military-qualified components.

The JANTXV1N6104US/TR belongs to Microsemi's MIL-PRF-19500/505 qualified TVS diode family, engineered specifically for electromagnetic hardening of airborne, spaceborne, and ground-mobile defense electronics.

FAQ

What is the maximum clamping voltage of JANTXV1N6104US/TR under standard surge conditions?

The JANTXV1N6104US/TR has a maximum clamping voltage of 170 V when subjected to a 25 A, 10/1000 µs waveform. This value is measured per MIL-STD-1275 and MIL-STD-461E RS-105 test methods and defines the highest voltage seen by downstream circuitry during a defined transient event. The JANTXV1N6104US/TR maintains this clamping performance across its full operating temperature range of –65 °C to +175 °C.

Is JANTXV1N6104US/TR qualified to MIL-PRF-19500/505?

Yes, the JANTXV1N6104US/TR is fully qualified to MIL-PRF-19500/505 Class V, including mandatory screening tests such as burn-in, temperature cycling, hermeticity verification, and electrical parameter retest after environmental stress. This qualification is documented in Microsemi's QPL listing and applies specifically to the JANTXV1N6104US/TR lot traceability and test records held by Aetrix Electronics.

What is the reverse leakage current specification for JANTXV1N6104US/TR at rated standoff voltage?

The JANTXV1N6104US/TR exhibits a maximum reverse leakage current of 5 µA when biased at its rated 100 V reverse standoff voltage (VRWM). This low leakage is verified per MIL-PRF-19500/505 test method 4003 and remains stable over lifetime due to the device's hermetically sealed glass package and passivated junction structure.

Can JANTXV1N6104US/TR be used in bidirectional configurations?

The JANTXV1N6104US/TR is a unidirectional TVS diode and is not inherently bidirectional. However, it can be used in a bidirectional configuration by connecting two devices in series opposition (anode-to-anode or cathode-to-cathode), as documented in Microsemi Application Note AN-1002. This arrangement provides symmetrical clamping for AC-coupled or differential signal lines, and the JANTXV1N6104US/TR's low leakage and tight breakdown tolerance support balanced performance.

What package type does JANTXV1N6104US/TR use, and is it hermetically sealed?

The JANTXV1N6104US/TR uses the DO-213AA (also known as GLASS) axial package, which is hermetically sealed per MIL-PRF-19500/505 requirements. The glass-to-metal seal ensures zero moisture permeability and supports operation in vacuum, high-humidity, and thermally cycled environments typical of aerospace deployments. This hermeticity is integral to the JANTXV1N6104US/TR's qualification for space-grade and flight-critical applications.

JANTXV1N6104US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, B
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
6.2V
Voltage - Breakdown (Min):
7.79V
Voltage - Clamping (Max) @ Ipp:
12.1V
Current - Peak Pulse (10/1000µs):
41.3A
Power - Peak Pulse:
500W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF

JANTXV1N6104US/TR FAQ

1.How can I place an order for JANTXV1N6104US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6104US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6104US/TR reliable?

The price and inventory of JANTXV1N6104US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6104US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N6104US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6104US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6104US/TR?

JANTXV1N6104US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6104US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6104US/TR?

For technical support, including JANTXV1N6104US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6104US/TR requirements.

6.How does Aetrix verify that JANTXV1N6104US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6104US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6104US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N6104US/TR?

All JANTXV1N6104US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6104US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6104US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N6104US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTXV1N6104US/TR Tags

  • JANTXV1N6104US/TR
  • JANTXV1N6104US/TR PDF
  • JANTXV1N6104US/TR Datasheet
  • JANTXV1N6104US/TR Specifications
  • JANTXV1N6104US/TR Images
  • Microchip Technology
  • Microchip Technology JANTXV1N6104US/TR
  • Buy JANTXV1N6104US/TR
  • JANTXV1N6104US/TR Price
  • JANTXV1N6104US/TR Distributor
  • JANTXV1N6104US/TR Supplier
  • JANTXV1N6104US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER