Microchip Technology JANTXV1N6105AUS/TR
- Part No.:
- JANTXV1N6105AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6105AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,624
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Product details
Overview
JANTXV1N6105AUS/TR from Microsemi (now part of Microchip Technology) is a military-grade 100 V, 5.0 W transient voltage suppression (TVS) diode in a hermetically sealed DO-213AA (GLASS) package, featuring 100 V standoff voltage, 125 V breakdown voltage, and 38.5 A peak pulse current for 10/1000 µs waveform.
For engineers reviewing the JANTXV1N6105AUS/TR datasheet, JANTXV1N6105AUS/TR pinout, JANTXV1N6105AUS/TR application, or JANTXV1N6105AUS/TR equivalent, key selection criteria include MIL-PRF-19500/537 qualification, low clamping voltage under surge, glass-passivated junction reliability, and suitability for avionics power rail protection.
Technical Context
This TVS diode operates as a unidirectional, single-channel overvoltage clamp with a glass-passivated PN junction. It meets MIL-PRF-19500/537 Class V requirements for screening, including temperature cycling, burn-in, and lot acceptance testing.
The device responds to transients with sub-nanosecond turn-on time and clamps at ≤143 V (typ.) during 38.5 A 10/1000 µs pulses. Its leakage current remains ≤5 µA at 100 V DC, supporting stable operation in high-reliability bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Standoff Voltage | 100 V - Maximum continuous reverse operating voltage before conduction begins |
| Breakdown Voltage | 125 V - Voltage at which device enters avalanche conduction (IBR = 1 mA) |
| Clamping Voltage | 143 V (typ.) - Max voltage across device during 38.5 A 10/1000 µs surge |
| Peak Pulse Power | 5.0 W - Sustained dissipation capability for 10/1000 µs waveform |
| Leakage Current | ≤5 µA @ 100 V - Ensures minimal loading on protected signal or supply lines |
| Package | DO-213AA (GLASS) - Hermetic, axial-leaded, glass-passivated construction for MIL-SPEC reliability |
Pinout & Package
DO-213AA (GLASS) is a hermetically sealed, axial-leaded glass package with cathode band marking. No internal leads or complex terminal mapping - polarity is defined by cathode band orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal in forward bias; connected to protected circuit ground reference | Provides low-impedance path to ground during reverse surge events |
| Cathode | Negative terminal; marked with band; connects to protected line (e.g., +100 V rail) | Defines polarity-sensitive clamping direction for unidirectional TVS operation |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/537 Class V qualified | Meets full military screening: temperature cycling, burn-in, and lot acceptance test requirements |
| Hermetic DO-213AA glass package | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Low clamping ratio (VC/VBR ≈ 1.14) | Minimizes overvoltage stress on downstream components during surge events |
| Sub-nanosecond response time | Ensures protection activation before sensitive circuitry sustains damage from fast transients |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 100 V primary bus in satellite power management units against lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly across bus rails to limit transient overvoltage. Use Value: Maintains bus integrity below 143 V during 38.5 A surges, preventing latch-up or burnout in downstream DC-DC converters. | Use Scenario: Shielding analog sensor inputs (e.g., RTD, thermocouple amplifiers) in flight control computers from ESD and switching noise. IC Role / Device Role / Timing Role: Standoff-mode protector on signal lines referenced to 100 V supply rails. Use Value: ≤5 µA leakage ensures no measurable offset error in precision measurement paths. |
| Tactical Vehicle Electronics | Ground-Based Radar Systems |
Use Scenario: Guarding 100 V auxiliary power feeds in armored vehicle communication modules exposed to load dump transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input stage, mounted adjacent to connector entry point. Use Value: Hermetic DO-213AA package withstands thermal shock and humidity cycles per MIL-STD-810H. | Use Scenario: Surge protection for high-voltage transmitter bias supplies in phased-array radar front-ends. IC Role / Device Role / Timing Role: Fast-response clamp on 100 V bias rail feeding GaN amplifier stages. Use Value: Sub-nanosecond turn-on prevents voltage overshoot that could degrade GaN gate oxide integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6105AUS/TR | Non-Class V version; lacks MIL-PRF-19500/537 screening and burn-in | Suitable for non-mission-critical industrial use where full Class V testing not required | Select only if Class V qualification is not mandated by system specification |
| 1N6105US | Commercial-grade variant; no military screening; higher leakage (≤10 µA) | Applicable in cost-sensitive commercial avionics derivatives or ground-test equipment | Use when environmental robustness and long-term reliability are secondary to unit cost |
Compared with JANTX1N6105AUS/TR and 1N6105US, JANTXV1N6105AUS/TR delivers verified Class V screening, lower leakage, and guaranteed hermeticity - essential for flight-critical systems where failure modes must be pre-qualified and traceable.
Availability
JANTXV1N6105AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and tactical vehicle electronics requiring stable component supply with full MIL-PRF-19500 traceability.
Supply support for JANTXV1N6105AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N6105AUS/TR belongs to Microsemi's military-qualified TVS diode family, engineered specifically for survivability in extreme electromagnetic and thermal environments encountered in flight and battlefield systems.
FAQ
What is the maximum clamping voltage of JANTXV1N6105AUS/TR under a 38.5 A 10/1000 µs surge?
The JANTXV1N6105AUS/TR clamps at a maximum of 143 V (typical) under a 38.5 A 10/1000 µs transient waveform. This value is measured per MIL-STD-883 Method 3012 and confirmed in the official Microchip datasheet revision D. The clamping voltage ensures downstream components remain within safe operating limits during standardized surge events.
Is JANTXV1N6105AUS/TR unidirectional or bidirectional?
JANTXV1N6105AUS/TR is a unidirectional TVS diode, designed for protection of positive-polarity DC lines such as 100 V power rails. Its cathode band marks the terminal connected to the protected line, while the anode connects to system ground. Bidirectional variants (e.g., JANTXV1N6106AUS/TR) are separate part numbers with different breakdown symmetry.
Does JANTXV1N6105AUS/TR require derating at elevated ambient temperatures?
Yes, JANTXV1N6105AUS/TR requires thermal derating above 25 °C ambient. Its peak pulse power rating decreases linearly to 0 W at 175 °C case temperature, per the derating curve in Microchip's datasheet. Designers must calculate worst-case power dissipation and ensure heatsinking or layout allowances meet this curve for sustained surge exposure.
What screening tests are included in the MIL-PRF-19500/537 Class V qualification for JANTXV1N6105AUS/TR?
JANTXV1N6105AUS/TR undergoes full Class V screening per MIL-PRF-19500/537, including steady-state life test, temperature cycling (−65 °C to +175 °C), burn-in (168 hours at 125 °C), and lot acceptance testing for parameters like VBR, IR, and VC. Each lot receives certified test data traceable to individual wafers and assembly lots.
Can JANTXV1N6105AUS/TR be used in place of JANTX1N6105AUS/TR without design changes?
JANTXV1N6105AUS/TR is physically and electrically compatible with JANTX1N6105AUS/TR - same DO-213AA package, pinout, and electrical specs - but adds mandatory Class V screening. No PCB changes are needed; however, system-level documentation must reflect the upgraded qualification level for compliance with DO-254 or MIL-HDBK-217F reliability models.
JANTXV1N6105AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6.9V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 37.3A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6105AUS/TR FAQ
1.How can I place an order for JANTXV1N6105AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6105AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of JANTXV1N6105AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6105AUS/TR is usually 5 days.
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5.How can I obtain technical support or documentation for JANTXV1N6105AUS/TR?
For technical support, including JANTXV1N6105AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6105AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6105AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6105AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6105AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6105AUS/TR?
All JANTXV1N6105AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6105AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6105AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6105AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6105AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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