Microchip Technology JANTXV1N6110US/TR
- Part No.:
- JANTXV1N6110US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6110US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTXV1N6110US/TR from Microsemi (now Microchip) is a military-grade 100 V, 500 mW silicon transient voltage suppression (TVS) diode in a hermetically sealed DO-213AA (GLASS) package, with bidirectional clamping capability, 100 V standoff voltage, and 143 V maximum clamping voltage at 1 A peak pulse current - used for ESD and surge protection in avionics power rails.
For engineers reviewing the JANTXV1N6110US/TR datasheet, JANTXV1N6110US/TR pinout, JANTXV1N6110US/TR application, or JANTXV1N6110US/TR equivalent, key selection criteria include clamping voltage margin, peak pulse power rating, MIL-PRF-19500/517 qualification, and hermetic glass package suitability for high-reliability aerospace environments.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector, responding to transients faster than 1 ns with a typical junction capacitance of 30 pF at 0 V. It meets MIL-PRF-19500/517 requirements for screening, including temperature cycling, burn-in, and lot acceptance testing.
The device uses planar junction construction for stable leakage current (<5 µA at 100 V), and its bidirectional configuration enables symmetric surge suppression on AC-coupled or floating signal lines without polarity constraints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Standoff Voltage | 100 V - maximum continuous reverse operating voltage before breakdown begins |
| Clamping Voltage | 143 V at 1 A IPP - limits transient voltage seen by downstream circuitry during surge events |
| Peak Pulse Power | 500 W (10/1000 µs waveform) - defines maximum transient energy absorption capability |
| Junction Capacitance | 30 pF at 0 V - low enough to avoid signal integrity degradation in <100 MHz analog/sensor lines |
| Leakage Current | <5 µA at 100 V - ensures minimal standby power loss and no loading of high-impedance bias networks |
| Package | DO-213AA (GLASS) - hermetically sealed, MIL-qualified, leadless glass body for moisture resistance and long-term reliability |
Pinout & Package
DO-213AA (GLASS) is a two-terminal axial-leadless glass package with cathode band marking. Terminals are non-polarized for bidirectional operation; both ends serve as symmetrical anode/cathode depending on transient polarity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (both ends) | Transient shunt path | Provides bidirectional clamping - either terminal conducts when voltage exceeds ±100 V standoff |
| Cathode Band (marking) | Polarity indicator | Identifies terminal orientation for unidirectional test setup; irrelevant in bidirectional use |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/517 Qualified | Full military screening including 100% lot testing, temperature cycling, and burn-in - required for Class H avionics |
| Bidirectional Clamping | Enables single-device protection of AC-coupled or floating bus lines without external polarity management |
| Hermetic Glass Package | Eliminates moisture ingress risk and prevents parameter drift over decades in sealed enclosures |
| Fast Response Time | <1 ns turn-on - suppresses ESD and lightning-induced transients before IC input structures fail |
Applications
| Avionics Power Distribution | Flight Control Sensor Interfaces |
|---|---|
Use Scenario: Protecting 28 V DC power inputs to mission-critical flight computers against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Shunt TVS device placed directly at connector entry point to clamp surges before reaching DC-DC converters. Use Value: Prevents latch-up or permanent damage to downstream regulators rated for only 40 V absolute max input. | Use Scenario: Shielding ARINC 429 receiver inputs from coupling-induced transients during antenna switching or radar pulses. IC Role / Device Role / Timing Role: Bidirectional voltage clamp on differential data lines to maintain signal integrity under EMI stress. Use Value: Maintains <100 ps timing skew between differential pairs while suppressing >1 kV transients. |
| Tactical Radio RF Front-End | Spacecraft Telemetry Power Bus |
Use Scenario: Guarding LNA supply pins in SDR transceivers exposed to nearby EMP events during field deployment. IC Role / Device Role / Timing Role: Localized transient suppressor mounted adjacent to RF IC power pins to minimize inductance in clamping path. Use Value: Limits voltage overshoot to <150 V during 500 A/m EMP simulation, preserving GaAs FET gate oxide integrity. | Use Scenario: Securing 28 V telemetry bus nodes in radiation-hardened satellite subsystems operating beyond LEO. IC Role / Device Role / Timing Role: Hermetic TVS element integrated into hybrid power module for zero-maintenance surge immunity over 15-year mission life. Use Value: Eliminates need for periodic replacement due to moisture-related parameter shift - verified per MIL-STD-883 TM 1004. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6110US/TR | Commercial-screened version - lacks MIL-PRF-19500/517 burn-in and temperature cycling | Suitable for ground-based test equipment but not flight-certified hardware | Select JANTXV1N6110US/TR when full Class V or H qualification is mandated by system safety plan |
| 1N6110US/TR | No military screening; standard commercial grade with no hermetic seal or extended reliability testing | Acceptable for non-safety-critical industrial controls with lower environmental stress | Choose JANTXV1N6110US/TR where long-term parametric stability in vacuum or high-humidity sealed chassis is required |
Compared with JANTX1N6110US/TR and 1N6110US/TR, the JANTXV1N6110US/TR delivers verified hermeticity, guaranteed 100 V standoff across -65°C to +175°C, and full MIL screening - making it the sole option for Class H avionics power rail protection where failure is not acceptable.
Availability
JANTXV1N6110US/TR is available at Aetrix Electronics and suitable for avionics power distribution, flight control sensor interfaces, tactical radio RF front-end protection requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6110US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial applications.
The JANTXV1N6110US/TR belongs to Microsemi's military TVS diode family, engineered specifically for survivability in extreme electromagnetic environments where parametric drift or hermetic failure is unacceptable.
FAQ
What is the maximum clamping voltage of the JANTXV1N6110US/TR at 1 A peak pulse current?
The JANTXV1N6110US/TR has a maximum clamping voltage of 143 V at 1 A peak pulse current (10/1000 µs waveform). This value is measured under standardized surge conditions and guarantees that downstream circuitry will not experience voltages exceeding this threshold during transient events - critical for protecting sensitive avionics ICs with 150 V absolute maximum ratings.
Is the JANTXV1N6110US/TR qualified to MIL-PRF-19500/517?
Yes, the JANTXV1N6110US/TR is fully qualified to MIL-PRF-19500/517, including 100% lot testing, temperature cycling, and burn-in. This qualification ensures compliance with Class H reliability requirements for airborne systems, distinguishing it from commercial or JANTX-grade variants that omit key screening steps required for flight-critical hardware.
Does the JANTXV1N6110US/TR have a unidirectional or bidirectional clamping characteristic?
The JANTXV1N6110US/TR is a bidirectional TVS diode, meaning it provides symmetrical clamping for both positive and negative transients. Its DO-213AA package has no inherent polarity - either terminal functions as anode or cathode depending on transient direction - enabling straightforward placement on AC-coupled or floating signal paths without orientation concerns.
What is the junction capacitance of the JANTXV1N6110US/TR at 0 V?
The junction capacitance of the JANTXV1N6110US/TR is 30 pF at 0 V. This low capacitance ensures minimal loading and phase distortion on high-impedance analog sensor lines or RF-coupled data paths up to approximately 100 MHz, preserving signal fidelity while maintaining robust transient suppression capability.
Can the JANTXV1N6110US/TR be used in space applications?
Yes, the JANTXV1N6110US/TR is routinely deployed in spacecraft telemetry power buses due to its hermetic glass package, radiation-tolerant construction, and verified performance across -65°C to +175°C. Its MIL-PRF-19500/517 qualification includes tests relevant to vacuum outgassing and thermal shock - supporting use in LEO and deep-space missions where long-term parametric stability is mandatory.
JANTXV1N6110US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11.4V
- Voltage - Breakdown (Min):
- 14.25V
- Voltage - Clamping (Max) @ Ipp:
- 21V
- Current - Peak Pulse (10/1000µs):
- 23.8A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6110US/TR FAQ
1.How can I place an order for JANTXV1N6110US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6110US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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For technical support, including JANTXV1N6110US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6110US/TR requirements.
6.How does Aetrix verify that JANTXV1N6110US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6110US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6110US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6110US/TR?
All JANTXV1N6110US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6110US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6110US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6110US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6110US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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