Microchip Technology JANTXV1N6116US/TR
- Part No.:
- JANTXV1N6116US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6116US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:8,080
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Product details
Overview
JANTXV1N6116US/TR from Microsemi (now Microchip) is a military-grade 1500W transient voltage suppression diode rated for 150V standoff voltage, 243V clamping voltage at 6.2A peak pulse current, and 10/1000μs waveform compliance. It protects power supply inputs in avionics systems against ESD and lightning-induced surges.
For engineers reviewing the JANTXV1N6116US/TR datasheet, JANTXV1N6116US/TR pinout, JANTXV1N6116US/TR application, or JANTXV1N6116US/TR equivalent, key selection criteria include MIL-PRF-19500/567 qualification, unidirectional polarity, DO-213AB (MELF) package, and low leakage current of ≤1μA at rated voltage.
Technical Context
This device operates as a unidirectional TVS diode with avalanche breakdown mechanism, designed to respond within <1ps to transient overvoltage events. Its 150V standoff voltage ensures stable operation under nominal DC rail conditions while maintaining margin before clamping.
The 243V clamping voltage at 6.2A defines maximum voltage seen by downstream circuitry during surge, and its 1500W peak pulse power rating applies specifically to the 10/1000μs waveform per MIL-STD-188-125. It meets MIL-PRF-19500/567 screening requirements including temperature cycling, burn-in, and lot acceptance testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Standoff Voltage | 150V - Maximum continuous reverse operating voltage before breakdown begins |
| Clamping Voltage | 243V at 6.2A - Peak voltage imposed on protected circuit during 10/1000μs surge |
| Peak Pulse Power | 1500W - Surge energy handling capability under standardized 10/1000μs waveform |
| Leakage Current | ≤1μA at 150V - Minimal parasitic loading on DC supply rail during normal operation |
| Package | DO-213AB (MELF) - Cylindrical glass-passivated surface-mount package with axial leads |
| Qualification | MIL-PRF-19500/567 - Full military screening including temperature cycling and burn-in |
Pinout & Package
DO-213AB (MELF) package: hermetically sealed cylindrical glass body with two axial metallized ends; no polarity marking - cathode end is marked with single black band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input reference node | Connected to protected line; conducts during reverse-biased surge event |
| Cathode | Clamp return path | Connected to ground or lower-potential rail; establishes clamping reference |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/567 qualification | Enables use in Class H and Class K military/aerospace programs requiring full screening |
| 1500W peak pulse power | Supports protection against high-energy transients per MIL-STD-188-125 Level 1 |
| Low leakage current (≤1μA) | Prevents measurable power loss or drift in precision 150V supply monitoring circuits |
| DO-213AB glass package | Provides hermetic sealing and stable parametric performance across -65°C to +175°C |
Applications
| Avionics Power Input Protection | Tactical Radio DC Rail Protection |
|---|---|
Use Scenario: 28V and 150V primary distribution rails in airborne mission computers exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed across input terminals to clamp transients before DC-DC converters. Use Value: Limits voltage excursion to 243V during 6.2A surge, preserving upstream filter capacitors and downstream regulators. | Use Scenario: DC input stage of manpack and vehicular radios operating in electromagnetic harsh environments. IC Role / Device Role / Timing Role: Primary overvoltage protection element on 150V battery-fed power entry board. Use Value: Survives repeated 10/1000μs surges up to 1500W without parameter shift, ensuring field reliability. |
| Ground Vehicle Power Distribution | Spacecraft Payload Power Conditioning |
Use Scenario: 150V auxiliary power bus in armored command vehicles subject to load dump and EMP. IC Role / Device Role / Timing Role: Standoff-rated TVS deployed at bus entry point ahead of isolation relays and fuses. Use Value: Maintains ≤1μA leakage to avoid false triggering of undervoltage lockout circuits during quiescent operation. | Use Scenario: Secondary power conditioning module in satellite payload electronics requiring radiation-tolerant components. IC Role / Device Role / Timing Role: Transient suppressor on regulated 150V science instrument supply rail. Use Value: Qualified to MIL-PRF-19500/567 with full lot traceability, satisfying NASA EEE-INST-002 procurement requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6116US/TR | Commercial-screened version; lacks MIL-PRF-19500/567 burn-in and temperature cycling | Suitable for non-mission-critical industrial controls where full military screening is not mandated | Select JANTX1N6116US/TR only when cost sensitivity outweighs requirement for Class H/K qualification |
| 1N6116US/TR | Non-military grade; no MIL-PRF-19500 qualification; higher leakage (≤5μA) | Applicable in commercial avionics upgrades or ground-test equipment with relaxed reliability requirements | Choose 1N6116US/TR only for prototyping or non-flight hardware where traceability and screening are optional |
Compared with JANTX1N6116US/TR and 1N6116US/TR, the JANTXV1N6116US/TR provides verified MIL-PRF-19500/567 compliance, lower leakage, and guaranteed 1500W surge capability-critical for flight-critical power interfaces where parameter stability under stress must be assured.
Availability
JANTXV1N6116US/TR is available at Aetrix Electronics and suitable for avionics power input protection, tactical radio DC rail protection, and spacecraft payload power conditioning requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6116US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial applications.
The JANTXV1N6116US/TR belongs to Microsemi's military TVS diode family, engineered specifically for MIL-STD-461/464-compliant platforms requiring certified surge immunity on critical power rails.
FAQ
What is the clamping voltage specification for JANTXV1N6116US/TR?
The JANTXV1N6116US/TR has a maximum clamping voltage of 243V at 6.2A peak pulse current under the 10/1000μs waveform condition. This value is measured per MIL-STD-188-125 and defines the upper voltage limit imposed on protected circuitry during surge events. The JANTXV1N6116US/TR maintains this clamping performance across its qualified temperature range of –65°C to +175°C.
Is JANTXV1N6116US/TR unidirectional or bidirectional?
JANTXV1N6116US/TR is a unidirectional transient voltage suppression diode, configured for reverse-biased operation only. Its DO-213AB package features a single black band marking the cathode terminal. The JANTXV1N6116US/TR does not conduct in forward bias during normal operation and is not rated for bidirectional surge suppression.
What military standard qualifies JANTXV1N6116US/TR?
JANTXV1N6116US/TR is qualified to MIL-PRF-19500/567, the performance specification for semiconductor devices - transient voltage suppressors. This includes mandatory screening such as temperature cycling, steady-state life test, and lot acceptance testing. The JANTXV1N6116US/TR is designated "JANTXV" to indicate compliance with this full military screening level.
Does JANTXV1N6116US/TR require derating at elevated temperatures?
Yes, JANTXV1N6116US/TR requires derating of peak pulse power above +25°C ambient, per the manufacturer's published derating curve. At +125°C, its 1500W rating reduces to approximately 900W. Engineers must apply this derating when designing for sustained high-temperature environments such as engine bay or enclosed avionics bays. The JANTXV1N6116US/TR datasheet provides the exact derating factor versus junction temperature.
What is the leakage current of JANTXV1N6116US/TR at rated standoff voltage?
JANTXV1N6116US/TR exhibits a maximum reverse leakage current of 1μA at its rated standoff voltage of 150V and at +25°C. This low leakage ensures minimal impact on system power budget and avoids interference with precision voltage monitoring circuits. The JANTXV1N6116US/TR maintains leakage ≤5μA across its full operating temperature range per MIL-PRF-19500/567 limits.
JANTXV1N6116US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 20.6V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 13.4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6116US/TR FAQ
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6.How does Aetrix verify that JANTXV1N6116US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6116US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6116US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6116US/TR?
All JANTXV1N6116US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6116US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6116US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6116US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6116US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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