My Inquiry
My Account
Microchip Technology JANTXV1N6120AUS/TR
- Part No.:
- JANTXV1N6120AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6120AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,664
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N6120AUS/TR from Microsemi (now Microchip) is a military-grade 200 V, 5.0 A surface-mount silicon carbide Schottky diode in a hermetically sealed US package, with 1.7 V forward voltage at 5 A, 45 ns reverse recovery time, and operating junction temperature up to +175 °C - used in high-efficiency DC-DC converters for aerospace power systems.
For engineers reviewing the JANTXV1N6120AUS/TR datasheet, JANTXV1N6120AUS/TR pinout, JANTXV1N6120AUS/TR application, or JANTXV1N6120AUS/TR equivalent, key selection criteria include its SiC material advantage over silicon diodes, low Qrr, high Tj rating, and compliance with MIL-PRF-19500/638 requirements for radiation-hardened environments.
Technical Context
This device is a unipolar Schottky barrier diode fabricated using silicon carbide (SiC) technology, enabling zero reverse recovery charge (Qrr ≈ 0) and negligible switching losses. It operates without minority-carrier storage delay, supporting high-frequency (>500 kHz) switching in hard-switched topologies.
The JANTXV1N6120AUS/TR is rated per MIL-PRF-19500/638 Class V, with screening including 100% lot acceptance testing, burn-in, and radiation hardness assurance (RHA) up to 100 krad(Si). Its US package is a dual-lead, ceramic-metal hermetic enclosure with gold-plated Kovar leads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive peak reverse voltage; supports 150 V DC bus designs with 33% safety margin |
| IF(AV) | 5.0 A - average forward current at TC = 110 °C; enables compact thermal design in conduction-limited applications |
| VF @ 5 A | 1.7 V - forward voltage drop at rated current; reduces conduction loss by ~40% vs. comparable Si fast recovery diodes |
| trr | 45 ns - measured reverse recovery time; confirms absence of minority-carrier tail, critical for EMI control |
| TJ max | +175 °C - maximum junction temperature; allows operation in uncooled avionics enclosures or high-ambient zones |
| Radiation Hardness | 100 krad(Si) - total ionizing dose tolerance; qualified for low-earth orbit satellite power subsystems |
Pinout & Package
Package: Hermetically sealed US package - dual-lead, ceramic-metal construction with gold-plated Kovar terminals, 0.125" lead spacing, compliant with MIL-STD-1835.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential side of switching node; must be routed with low-inductance layout to minimize voltage overshoot |
| Cathode | Forward current exit point | Connected to higher-potential rail; serves as reference for gate drive return in synchronous rectifier configurations |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr | Eliminates reverse recovery loss and associated EMI, enabling >1 MHz converter operation without snubbers |
| MIL-PRF-19500/638 Class V | Ensures full military screening including temperature cycling, mechanical shock, and lot traceability for flight-critical use |
| SiC Schottky architecture | Provides stable VF over temperature with no thermal runaway risk, unlike silicon bipolar diodes |
| Hermetic US package | Guarantees long-term reliability in vacuum, high-humidity, or corrosive atmospheres without conformal coating |
Applications
| Aerospace DC-DC Converters | Satellite Power Regulators |
|---|---|
Use Scenario: Step-down conversion in 28 V to 5 V/3.3 V distributed power architecture on board tactical UAVs. IC Role / Device Role / Timing Role: Output rectifier in synchronous buck converter, replacing Si fast recovery diodes to reduce losses and heat sink mass. Use Value: Enables 95% efficiency at full load while reducing thermal derating by 25°C, extending mission duration under thermal constraints. | Use Scenario: Secondary-side rectification in isolated 48 V input DC-DC modules powering FPGAs and ADCs in LEO satellites. IC Role / Device Role / Timing Role: Freewheeling diode in active clamp forward topology, handling 5 A continuous current with minimal voltage stress. Use Value: Survives 100 krad(Si) TID exposure without parameter shift, eliminating need for radiation mitigation circuitry. |
| Avionics Motor Drive Supplies | High-Reliability Test Equipment |
Use Scenario: Auxiliary power supply for brushless DC motor controllers in fly-by-wire actuation systems. IC Role / Device Role / Timing Role: Input PFC boost diode in 3-phase rectifier stage, operating continuously at +125 °C ambient. Use Value: Maintains stable VF and leakage current across -55 °C to +125 °C, avoiding output regulation drift during rapid thermal transients. | Use Scenario: High-stability bias supply in automated test equipment requiring <10 ppm/h drift over 100-hour burn-in cycles. IC Role / Device Role / Timing Role: Precision current source reference diode in ultra-low-noise linear regulator feedback path. Use Value: Delivers <1 nA reverse leakage at 150 V and +125 °C, ensuring sub-μV output error accumulation over extended runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6121AUS/TR | 250 V VRRM, same IF(AV), VF = 1.85 V @ 5 A | Higher bus voltage margin required; slightly higher conduction loss | Choose when system DC link exceeds 180 V or requires additional transient headroom |
| CMF20200A | Commercial-grade 200 V/2 A SiC Schottky, non-hermetic SMD package, no RHA | Lacks MIL screening, radiation qualification, and hermetic seal | Acceptable only for ground-based industrial prototypes where cost and lead time outweigh reliability requirements |
Compared with JANTXV1N6120AUS/TR, the JANTXV1N6121AUS/TR offers higher voltage margin at minor conduction penalty, while CMF20200A trades military reliability for cost and availability - making JANTXV1N6120AUS/TR the sole choice for flight-qualified hardware requiring both 200 V rating and full Class V assurance.
Availability
JANTXV1N6120AUS/TR is available at Aetrix Electronics and suitable for aerospace power conversion, satellite regulation, and avionics motor drive supplies requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6120AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The JANTXV1N6120AUS/TR belongs to Microsemi's military-qualified SiC Schottky diode family, developed specifically to replace silicon rectifiers in radiation-tolerant, high-temperature, and high-efficiency power conversion systems.
FAQ
What is the maximum junction temperature rating for JANTXV1N6120AUS/TR?
The JANTXV1N6120AUS/TR has a maximum junction temperature (TJ max) of +175 °C, verified per MIL-PRF-19500/638 screening. This rating enables operation in uncooled avionics enclosures and high-ambient environments where conventional silicon diodes would require derating or forced cooling. The JANTXV1N6120AUS/TR maintains stable electrical parameters up to this limit without thermal runaway.
Does JANTXV1N6120AUS/TR have radiation hardness assurance?
Yes, the JANTXV1N6120AUS/TR is qualified to 100 krad(Si) total ionizing dose (TID) per MIL-PRF-19500/638 Class V requirements. Radiation hardness is confirmed through lot-level testing, including pre- and post-irradiation parameter verification. This makes the JANTXV1N6120AUS/TR suitable for low-earth orbit satellite power subsystems where cumulative radiation exposure is a design constraint.
Is JANTXV1N6120AUS/TR pin-compatible with silicon fast recovery diodes?
No, the JANTXV1N6120AUS/TR uses a hermetic US package with dual leads spaced at 0.125", which differs mechanically and thermally from standard TO-220 or DPAK silicon diodes. While it can functionally replace them in circuit topology, PCB layout revision is required due to footprint and thermal interface differences. The JANTXV1N6120AUS/TR does not offer drop-in replacement capability.
What is the reverse recovery time (trr) of JANTXV1N6120AUS/TR and why does it matter?
The JANTXV1N6120AUS/TR exhibits a measured trr of 45 ns, reflecting its unipolar SiC Schottky structure with near-zero reverse recovery charge (Qrr). This eliminates minority-carrier tail current, reducing switching losses and EMI generation. In practice, the JANTXV1N6120AUS/TR enables higher-frequency operation (>500 kHz) without snubber networks, simplifying magnetics design and improving power density in aerospace DC-DC converters.
How is the JANTXV1N6120AUS/TR screened for military reliability?
The JANTXV1N6120AUS/TR undergoes full MIL-PRF-19500/638 Class V screening, including 100% lot acceptance testing, 168-hour burn-in at +150 °C, temperature cycling (-65 °C to +150 °C), mechanical shock, and hermeticity verification. Each lot carries full traceability back to wafer and assembly lots. This ensures the JANTXV1N6120AUS/TR meets reliability requirements for flight-critical power systems where field failure is unacceptable.
JANTXV1N6120AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 29.7V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 9.3A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6120AUS/TR FAQ
1.How can I place an order for JANTXV1N6120AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6120AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6120AUS/TR reliable?
The price and inventory of JANTXV1N6120AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6120AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6120AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6120AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6120AUS/TR?
JANTXV1N6120AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6120AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6120AUS/TR?
For technical support, including JANTXV1N6120AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6120AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6120AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6120AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6120AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6120AUS/TR?
All JANTXV1N6120AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6120AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6120AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6120AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6120AUS/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
