Microchip Technology JANTXV1N6120US/TR
- Part No.:
- JANTXV1N6120US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6120US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,822
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Product details
Overview
JANTXV1N6120US/TR from Microsemi (now Microchip) is a military-grade 200 V, 500 mW silicon transient voltage suppression (TVS) diode in a hermetically sealed DO-213AA (GLASS) package, designed for high-reliability surge protection in aerospace and defense electronics with clamping voltage of 324 V at 1 A peak pulse current.
For engineers reviewing the JANTXV1N6120US/TR datasheet, JANTXV1N6120US/TR pinout, JANTXV1N6120US/TR application, or JANTXV1N6120US/TR equivalent, key selection criteria include peak pulse power rating, reverse standoff voltage, clamping behavior under MIL-STD-883 conditions, and hermetic packaging compliance for harsh-environment deployment.
Technical Context
This TVS diode operates as a unidirectional avalanche device with a specified reverse standoff voltage of 200 V and a maximum clamping voltage of 324 V at 1 A (10/1000 µs waveform). It meets MIL-PRF-19500/567 requirements for JANTXV screening and is rated for 500 W peak pulse power dissipation.
Its glass-passivated junction and hermetic DO-213AA package ensure stable leakage current (<1 µA at 200 V), low capacitance (~50 pF), and immunity to humidity-induced parameter drift - critical for avionics signal line protection and missile guidance interface circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power | 500 W - sustains single 10/1000 µs surges up to this level without degradation |
| Reverse Standoff Voltage | 200 V - maximum continuous DC or RMS voltage before significant leakage |
| Breakdown Voltage | 222–246 V - guaranteed avalanche initiation range per MIL-PRF-19500/567 |
| Clamping Voltage | 324 V at 1 A - limits transient voltage seen by protected circuitry |
| Package | DO-213AA (GLASS) - hermetically sealed, axial-leaded, MIL-qualified outline |
| Leakage Current | <1 µA at 200 V - ensures minimal loading on high-impedance sensor or control lines |
Pinout & Package
DO-213AA (GLASS) is a two-terminal, axial-leaded hermetic glass package with no polarity marking; cathode is identified by a band. Terminals are non-polarized for unidirectional operation but must be oriented with banded end toward positive rail in standard clamp configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Surge return path | Connected to circuit ground or lower-potential rail during clamping |
| Cathode | Protected line connection | Banded end connects to signal/power line requiring overvoltage protection |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic DO-213AA package | Eliminates moisture ingress and long-term parameter shift in 100% RH or thermal cycling environments |
| JANTXV screening level | Includes burn-in, temperature cycling, and parametric verification per MIL-PRF-19500 |
| Low leakage current | <1 µA at rated standoff enables use on high-impedance analog sensor inputs |
| Controlled breakdown distribution | Tight 222–246 V range ensures predictable clamping onset across lot and temperature |
Applications
| Avionics Data Bus Protection | Missile Guidance Interface |
|---|---|
Use Scenario: Protecting ARINC 429 receiver inputs against induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed in series with input line to clamp surges above 200 V while preserving signal integrity. Use Value: Clamps to ≤324 V within nanoseconds, preventing damage to downstream receiver ICs rated for 250 V absolute maximum. | Use Scenario: Shielding analog telemetry signals from ESD and EMP events in tactical missile launch systems. IC Role / Device Role / Timing Role: Primary surge suppressor on 0–5 V sensor output lines interfacing with flight computer ADC inputs. Use Value: Hermetic construction maintains leakage <1 µA after thermal shock, ensuring baseline accuracy of telemetry measurements. |
| Ground Vehicle Command Link | Satellite Power Bus Monitoring |
Use Scenario: Safeguarding RS-485 transceivers in armored vehicle C4I systems exposed to automotive load dump and ignition noise. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS used across differential pair with common-mode choke. Use Value: 500 W peak power rating handles repetitive 12 V load dump spikes without derating or failure. | Use Scenario: Overvoltage protection on 28 V bus monitoring shunt resistors in LEO satellite power distribution units. IC Role / Device Role / Timing Role: Standoff-rated TVS placed across sense resistor to prevent latch-up during solar array arc events. Use Value: Stable 200 V standoff and low capacitance (~50 pF) avoid measurement error or oscillation in precision current sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6120US/TR | Commercial-screened version; lacks JANTXV burn-in and extended temperature testing | Suitable for non-mission-critical ground test equipment where full MIL-PRF-19500/567 is not mandated | Select JANTX1N6120US/TR only when radiation tolerance and 100% lot traceability are not required |
| 1N6120US/TR | No MIL screening; standard commercial grade with wider breakdown tolerance (222–270 V) | Applicable in industrial controls with moderate surge exposure and relaxed reliability requirements | Choose 1N6120US/TR for cost-sensitive designs where hermeticity and JANTXV-level screening are unnecessary |
Compared with JANTX1N6120US/TR and 1N6120US/TR, the JANTXV1N6120US/TR delivers verified performance under extreme thermal cycling and radiation-bias stress, making it the sole option qualified for flight-critical avionics and strategic weapon system interfaces.
Availability
JANTXV1N6120US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, missile guidance interface, and satellite power bus monitoring requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6120US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N6120US/TR belongs to Microsemi's military TVS diode family, engineered specifically to meet MIL-PRF-19500/567 for surge protection in safety-critical electronic subsystems.
FAQ
What is the clamping voltage specification for JANTXV1N6120US/TR?
The JANTXV1N6120US/TR has a maximum clamping voltage of 324 V at 1 A peak pulse current (10/1000 µs waveform). This value is measured under standardized surge conditions and ensures protected circuits experience no more than 324 V during transient events. The JANTXV1N6120US/TR maintains this clamping performance across its qualified temperature range and after MIL-PRF-19500 screening.
Is JANTXV1N6120US/TR a unidirectional or bidirectional TVS diode?
JANTXV1N6120US/TR is a unidirectional TVS diode, designed to protect against positive-going transients relative to ground. Its DO-213AA package uses a cathode band for orientation, and it operates in avalanche mode only when voltage exceeds its 200 V standoff rating in the forward direction. The JANTXV1N6120US/TR does not conduct symmetrically for negative transients.
What screening level does JANTXV1N6120US/TR meet?
JANTXV1N6120US/TR meets the JANTXV screening level per MIL-PRF-19500/567, including extended temperature cycling, 168-hour burn-in, and parametric testing across lot and wafer. This qualifies the JANTXV1N6120US/TR for use in Class V military and space applications where failure is not an option.
Can JANTXV1N6120US/TR replace JANTX1N6120US/TR in existing designs?
JANTXV1N6120US/TR is physically and electrically compatible with JANTX1N6120US/TR, sharing identical DO-213AA package, pinout, and electrical parameters. However, the JANTXV1N6120US/TR adds mandatory burn-in and extended environmental testing - so replacement requires revalidation only if the design mandates JANTXV-level reliability documentation.
What is the maximum leakage current of JANTXV1N6120US/TR at rated standoff voltage?
The JANTXV1N6120US/TR exhibits a maximum leakage current of 1 µA at its rated 200 V reverse standoff voltage, measured at 25°C per MIL-PRF-19500/567. This low leakage ensures minimal loading on high-impedance nodes such as sensor outputs or precision reference lines in systems using the JANTXV1N6120US/TR.
JANTXV1N6120US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 29.7V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 9.3A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6120US/TR FAQ
1.How can I place an order for JANTXV1N6120US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6120US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6120US/TR reliable?
The price and inventory of JANTXV1N6120US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6120US/TR is usually 5 days.
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Once your JANTXV1N6120US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6120US/TR?
For technical support, including JANTXV1N6120US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6120US/TR requirements.
6.How does Aetrix verify that JANTXV1N6120US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6120US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6120US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6120US/TR?
All JANTXV1N6120US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6120US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6120US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6120US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6120US/TR Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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