Microchip Technology JANTXV1N6129US/TR
- Part No.:
- JANTXV1N6129US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6129US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,528
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Product details
Overview
JANTXV1N6129US/TR from Microsemi (now Microchip) is a military-grade 1500W transient voltage suppression diode rated for 200V standoff voltage, 328V clamping voltage at 4.6A peak pulse current, and 10/1000μs waveform compliance. It serves as primary overvoltage protection in DC power input stages of avionics and ground vehicle electronics.
For engineers reviewing the JANTXV1N6129US/TR datasheet, JANTXV1N6129US/TR pinout, JANTXV1N6129US/TR application, or JANTXV1N6129US/TR equivalent, key selection criteria include peak pulse power rating, clamping ratio, junction capacitance under bias, MIL-PRF-19500/537 qualification, and hermetic TO-204AA (DO-35) axial package suitability for high-reliability environments.
Technical Context
This device operates as a unidirectional silicon avalanche diode with a specified breakdown voltage range of 222–242V at 1mA test current. Its 1500W peak pulse power rating is validated per MIL-STD-750 Method 3015.7 using 10/1000μs waveform, and it maintains ≤1.5pF junction capacitance at 0V bias - critical for preserving signal integrity in protected analog or control lines.
The JANTXV1N6129US/TR meets MIL-PRF-19500/537 requirements for screening, including temperature cycling, burn-in, and hermeticity testing. Its TO-204AA (DO-35) metal-glass package ensures mechanical robustness and thermal stability across –65°C to +175°C operating range, supporting deployment in harsh-environment power conditioning circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Standoff Voltage | 200V - maximum continuous reverse voltage before significant leakage begins; defines operating margin below clamping threshold. |
| Clamping Voltage | 328V at 4.6A - limits transient-induced stress on downstream circuitry during surge events. |
| Peak Pulse Power | 1500W - energy-handling capacity for 10/1000μs transients per MIL-STD-750 Method 3015.7. |
| Junction Capacitance | ≤1.5pF at 0V - minimizes loading on high-frequency signal paths when used on data or sensor lines. |
| Operating Temperature | –65°C to +175°C - enables use in extended-range military and aerospace platforms without derating. |
| Qualification Standard | MIL-PRF-19500/537 - confirms full military screening including hermeticity, temperature cycling, and lot acceptance tests. |
Pinout & Package
Hermetically sealed TO-204AA (DO-35) axial-leaded package with cathode band marking. Leads are tinned copper alloy, compatible with wave and hand soldering per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to system ground or low-side reference in unidirectional TVS configurations. |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected line; reverse-biased operation enables clamping above standoff voltage. |
Key Features
| Feature | Design Value |
|---|---|
| 1500W Peak Pulse Power | Enables single-device protection against severe lightning-induced surges in 28VDC aircraft systems. |
| MIL-PRF-19500/537 Screening | Guarantees reliability in mission-critical avionics where failure modes must be statistically bounded. |
| TO-204AA Hermetic Package | Prevents moisture ingress and corrosion in humid, salt-laden, or high-vibration environments. |
| Low Junction Capacitance | Preserves bandwidth and rise time integrity on protected RS-422 or synchro signal lines. |
Applications
| Avionics Power Input Protection | Ground Vehicle DC Distribution |
|---|---|
Use Scenario: 28VDC primary power feed to flight control computers in fixed-wing aircraft. IC Role / Device Role / Timing Role: Unidirectional TVS diode providing first-line surge suppression at power entry point. Use Value: Clamps induced transients from load dump or lightning coupling to ≤328V, preventing latch-up or gate oxide damage in downstream DC-DC converters. | Use Scenario: 24V battery-fed control module in armored personnel carriers exposed to EMP-like events. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main power rail ahead of microcontroller and CAN transceivers. Use Value: Absorbs 1500W pulses without degradation, maintaining functional safety during electromagnetic threats per MIL-STD-461G CS115. |
| Tactical Radio Front-End Protection | Missile Guidance System Power Conditioning |
Use Scenario: RF power amplifier supply line in man-portable SINCGARS radios subjected to ESD and antenna-coupled surges. IC Role / Device Role / Timing Role: Fast-response unidirectional suppressor placed directly at DC input connector. Use Value: Sub-1ns response time and ≤1.5pF capacitance prevent RF desense while limiting voltage overshoot to safe levels. | Use Scenario: Regulated 5V/15V dual-rail generation for inertial measurement units in guided munitions. IC Role / Device Role / Timing Role: Secondary-level TVS protecting LDO inputs from switching noise and launch-induced transients. Use Value: Operates reliably at –65°C to +175°C and passes MIL-PRF-19500/537 screening, ensuring functionality across full mission envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6128US/TR | 180V standoff, 296V clamping at 4.6A - lower voltage rating with tighter clamping ratio. | Better suited for 24V nominal systems requiring tighter overvoltage margin. | Select when system max operating voltage is ≤180V and clamping headroom must be minimized. |
| JANTXV1N6130US/TR | 250V standoff, 400V clamping at 4.6A - higher voltage rating with increased clamping headroom. | Preferred for 270V aircraft bus interfaces where higher standoff avoids false triggering. | Choose for 270VDC platforms needing immunity to normal bus ripple while retaining surge suppression. |
Compared with JANTXV1N6128US/TR and JANTXV1N6130US/TR, the JANTXV1N6129US/TR provides optimal clamping margin for 200V-rated 28VDC avionics systems - balancing standoff headroom and transient suppression effectiveness without unnecessary voltage overhead.
Availability
JANTXV1N6129US/TR is available at Aetrix Electronics and suitable for avionics power input protection, ground vehicle DC distribution, and missile guidance system power conditioning requiring stable component supply and long-term obsolescence management.
Supply support for JANTXV1N6129US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JANTXV1N6129US/TR belongs to Microsemi's military-qualified TVS diode family, engineered specifically for survivability in MIL-STD-704, MIL-STD-1275, and DO-160-compliant power systems.
FAQ
What is the clamping voltage specification for JANTXV1N6129US/TR?
The JANTXV1N6129US/TR has a maximum clamping voltage of 328V at 4.6A peak pulse current under 10/1000μs waveform conditions. This value is measured per MIL-STD-750 Method 3015.7 and defines the upper voltage limit imposed on protected circuitry during surge events. The JANTXV1N6129US/TR maintains this clamping performance across its full qualified temperature range.
Is JANTXV1N6129US/TR compliant with MIL-PRF-19500/537?
Yes, the JANTXV1N6129US/TR is fully qualified to MIL-PRF-19500/537, including mandatory screening such as hermeticity testing, temperature cycling, and lot acceptance tests. This qualification ensures the JANTXV1N6129US/TR meets the reliability and consistency requirements for Class V military applications.
What package type does JANTXV1N6129US/TR use?
The JANTXV1N6129US/TR uses a hermetically sealed TO-204AA (DO-35) axial-leaded package with tinned copper alloy leads. This package supports manual and automated soldering per MIL-STD-202 and provides mechanical and environmental robustness required for aerospace and defense deployments.
How does JANTXV1N6129US/TR differ from commercial-grade TVS diodes?
The JANTXV1N6129US/TR differs from commercial TVS diodes through MIL-PRF-19500/537 qualification, extended temperature range (–65°C to +175°C), hermetic packaging, and guaranteed 1500W pulse power performance under military test methods. Commercial equivalents lack screening, temperature margin, and long-term reliability validation required for JANTXV1N6129US/TR applications.
Can JANTXV1N6129US/TR be used in bidirectional configurations?
No, the JANTXV1N6129US/TR is a unidirectional TVS diode and must be used with correct polarity - cathode connected to the line being protected. Bidirectional protection requires either two series-opposed devices or a dedicated bidirectional part such as JANTXV1N6129B. Using JANTXV1N6129US/TR in reverse orientation risks permanent breakdown.
JANTXV1N6129US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 4A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6129US/TR FAQ
1.How can I place an order for JANTXV1N6129US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6129US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of JANTXV1N6129US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6129US/TR is usually 5 days.
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5.How can I obtain technical support or documentation for JANTXV1N6129US/TR?
For technical support, including JANTXV1N6129US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6129US/TR requirements.
6.How does Aetrix verify that JANTXV1N6129US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6129US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6129US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6129US/TR?
All JANTXV1N6129US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6129US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6129US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6129US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6129US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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