Microchip Technology JANTXV1N6139US/TR
- Part No.:
- JANTXV1N6139US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6139US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:5,410
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Product details
Overview
JANTXV1N6139US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) with 5.7 V working standoff voltage (VWM), 11.2 V clamping voltage (VC) at 133.9 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform-designed for lightning surge and ESD protection in avionics power rails.
For engineers reviewing the JANTXV1N6139US/TR datasheet, JANTXV1N6139US/TR pinout, JANTXV1N6139US/TR application, or JANTXV1N6139US/TR equivalent, key selection criteria include MIL-PRF-19500/516 JANTXV qualification, axial-leaded hard-glass package, bidirectional clamping behavior, -55°C to +175°C operating junction temperature, and IEC61000-4-2/4-4/4-5 compliance readiness.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds for high-reliability interconnect integrity under thermal cycling and mechanical shock. Its voidless hermetic glass construction ensures long-term stability in vacuum and high-humidity environments typical of aerospace deployments.
The device delivers 1500 W peak pulse power at 25°C with thermal resistance junction-to-lead (RθJL) of 20°C/W, enabling robust transient suppression without derating when mounted with 3/8″ lead length. Standby current remains ≤300 µA at 5.7 V VWM, supporting low-power monitoring circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 5.7 V - Maximum continuous reverse/forward voltage before conduction begins; sets system-level overvoltage trip threshold. |
| V(BR) @ I(BR) | 7.13 V @ 175 mA - Breakdown initiates reliably within specification, ensuring predictable clamping onset. |
| VC @ IPP | 11.2 V @ 133.9 A - Clamped voltage during 10/1000 µs surge; defines worst-case rail excursion during transient. |
| PPP | 1500 W - Sustains single high-energy surges per IEC61000-4-5 Level 3/4 without failure. |
| TJ Range | -55°C to +175°C - Fully rated operation across extended military temperature range without parameter drift. |
| RθJL | 20°C/W - Enables direct thermal path to chassis or heatsink via axial leads; supports >5 W steady-state dissipation at TL = 75°C. |
Pinout & Package
Package: Axial-leaded "C"-type hard-glass case with tungsten slugs, voidless hermetic seal, tin/lead-plated copper leads, ~1270 mg mass. Dimensions: BD = 3.43–4.70 mm, BL = 3.56–4.95 mm, LD = 0.91–1.07 mm, LL = 25.4–33.02 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Transient current entry point in forward bias | Bidirectional symmetry means either lead serves as anode or cathode depending on surge polarity; no marking required. |
| Cathode (Lead 2) | Transient current exit point in forward bias | Same physical terminal as Anode under reverse surge; dual-role axial configuration enables compact PCB layout without orientation constraints. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year service life in space-grade systems. |
| Category 1 metallurgical bonds | Withstands >1000 thermal cycles (-55°C ↔ +125°C) without bond fatigue-critical for launch vibration survival. |
| MIL-PRF-19500/516 JANTXV qualification | Includes lot traceability, burn-in, temperature cycling, and radiation hardness per MicroNote 050 (100 krad(Si)). |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration under high humidity and salt fog exposure. |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in flight control computers against induced lightning transients per DO-160 Section 22 Level 3. IC Role / Device Role / Timing Role: Bidirectional TVS clamping device placed directly at connector entry point to shunt surge energy to chassis ground. Use Value: Limits rail excursion to ≤11.2 V during 133.9 A surge, preserving downstream DC-DC converter input stage integrity. | Use Scenario: Safeguarding analog sensor signal lines (e.g., RTD, thermocouple) in engine monitoring units exposed to EFT bursts. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor bridging differential pair to ground, maintaining signal fidelity below 1 MHz. Use Value: Sub-300 µA standby current avoids loading precision reference paths; 5.7 V VWM aligns with ±5 V sensor supply rails. |
| Tactical Radio Front-End | Satellite Command & Data Handling |
Use Scenario: Shielding RF power amplifier bias lines from ESD events during field maintenance in humid desert environments. IC Role / Device Role / Timing Role: Axial-leaded TVS soldered inline on bias feed line, leveraging lead inductance to dampen fast-rising ESD edges. Use Value: Hermetic glass body prevents corrosion-induced leakage drift; 175°C max junction rating accommodates sealed enclosure heating. | Use Scenario: Securing command receiver inputs against secondary lightning effects during orbital insertion phase. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor integrated into MIL-STD-1553B data line protection network. Use Value: Inherent TID tolerance (100 krad) eliminates need for additional shielding; bidirectional response matches AC-coupled bus signaling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6139A | Same electrical specs but commercial-grade, non-military qualified; no MIL-PRF-19500/516 screening. | Lacks JANTXV reliability testing (burn-in, thermal cycling, lot traceability); unsuitable for flight hardware. | Select only for ground-test fixtures or non-safety-critical prototypes where cost outweighs lifetime assurance. |
| JANTXV1N6140US/TR | Higher VWM (6.2 V), higher VC (12.1 V), lower IPP (124.0 A); otherwise identical construction and qualification. | Better suited for 3.3 V logic rail protection where tighter clamping margin is acceptable. | Choose when system VWM margin requires ≥6.0 V standoff, or when higher clamping voltage is tolerable for reduced surge current demand. |
Compared with JANTXV1N6139US/TR, 1N6139A offers identical performance at lower cost but no military reliability assurance, while JANTXV1N6140US/TR trades 0.5 V higher standoff for 0.9 V higher clamping-enabling design flexibility across adjacent voltage rails without changing board layout.
Availability
JANTXV1N6139US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and tactical radio front-end applications requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N6139US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANTXV1N6139US/TR belongs to Microsemi's legacy 1N61xxA TVS family-engineered specifically for mission-critical surge protection in environments where failure is not an option, including launch vehicles, satellites, and airborne computing systems.
FAQ
What is the maximum clamping voltage of JANTXV1N6139US/TR under a 10/1000 µs surge?
The JANTXV1N6139US/TR has a maximum clamping voltage (VC) of 11.2 V when subjected to its rated peak pulse current of 133.9 A using the standard 10/1000 µs double-exponential waveform. This value is guaranteed across the full -55°C to +175°C junction temperature range and is measured with specified test conditions per MIL-PRF-19500/516.
Is JANTXV1N6139US/TR RoHS compliant?
No, JANTXV1N6139US/TR is not RoHS compliant. It uses traditional tin/lead plating on copper leads per MIL-PRF-19500/516 requirements. RoHS-compliant matte-tin versions are available only for commercial-grade variants (e.g., 1N6139A), not for JANTXV-qualified parts.
Does JANTXV1N6139US/TR require polarity-aware PCB layout?
No, JANTXV1N6139US/TR does not require polarity-aware layout. As a bidirectional TVS, it exhibits symmetrical clamping behavior in both forward and reverse directions, and the device body carries no polarity marking. Either axial lead may be connected to line or ground without functional impact.
What is the thermal resistance junction-to-lead (RθJL) for JANTXV1N6139US/TR?
The thermal resistance junction-to-lead (RθJL) for JANTXV1N6139US/TR is 20°C/W, measured with 3/8 inch lead length from the package body. This value enables reliable heat transfer to the PCB or chassis and supports up to 5.0 W off-state power dissipation at lead temperature (TL) of 75°C per MIL-PRF-19500/516 limits.
How does JANTXV1N6139US/TR differ from the non-"A" version 1N6139US?
The JANTXV1N6139US/TR (with "A") has tighter electrical tolerances: its minimum breakdown voltage is 7.13 V, clamping voltage is 11.2 V, and peak pulse current is 133.9 A. The non-"A" 1N6139US has 5% lower minimum V(BR), 5% higher VC, and 5% lower IPP-making the "A" version more precise and repeatable for critical designs.
JANTXV1N6139US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 5.7V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 133.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6139US/TR FAQ
1.How can I place an order for JANTXV1N6139US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6139US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6139US/TR reliable?
The price and inventory of JANTXV1N6139US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6139US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6139US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6139US/TR transactions.
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4.How is shipping managed for JANTXV1N6139US/TR?
JANTXV1N6139US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6139US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6139US/TR?
For technical support, including JANTXV1N6139US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6139US/TR requirements.
6.How does Aetrix verify that JANTXV1N6139US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6139US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6139US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6139US/TR?
All JANTXV1N6139US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6139US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6139US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6139US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6139US/TR Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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