Microchip Technology JANTXV1N6142AUS/TR
- Part No.:
- JANTXV1N6142AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6142AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTXV1N6142AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 7.6 V working standoff voltage (VWM), and 14.5 V clamping voltage (VC) at 103.4 A peak pulse current - deployed in avionics power rail protection and radar front-end ESD hardening.
For engineers reviewing the JANTXV1N6142AUS/TR datasheet, JANTXV1N6142AUS/TR pinout, JANTXV1N6142AUS/TR application, or JANTXV1N6142AUS/TR equivalent, key selection criteria include MIL-PRF-19500/516 JANTXV qualification level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and compatibility with high-reliability PCB assembly under 260 °C reflow.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses Category 1 internal metallurgical bonds for radiation-hardened reliability per MicroNote 050. Its hard-glass construction ensures voidless hermetic sealing, enabling operation from −55 °C to +175 °C junction temperature.
It delivers 1500 W peak pulse power under 10/1000 µs waveform while maintaining 100 µA maximum standby current at 7.6 V VWM, and exhibits 0.07 %/°C temperature coefficient of breakdown voltage - critical for stable clamping across extended thermal environments in aerospace systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.6 V - Maximum continuous reverse/forward working voltage before conduction begins; defines safe operating margin below clamping threshold. |
| VC @ IPP | 14.5 V at 103.4 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to sub-15 V during lightning-induced transients. |
| PPP | 1500 W - Peak pulse power handling capability; supports MIL-STD-461G CS115 and IEC 61000-4-5 Level 4 surge immunity. |
| IPP | 103.4 A - Peak surge current supported at rated clamping voltage; enables protection of 28 V DC aircraft bus interfaces. |
| TJ/TSTG | −55 °C to +175 °C - Extended junction/storage temperature range; qualified for missile guidance electronics and space-qualified payloads. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; allows direct thermal coupling to heatsinked PCB copper for sustained surge duty cycles. |
| αV(BR) | 0.07 %/°C - Low temperature coefficient of breakdown voltage; ensures <±1.5% VBR drift over −55 °C to +125 °C operational range. |
Pinout & Package
Package: SQ-MELF (Square End Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass body with tungsten slugs; terminals are tin/lead plated copper; weight ≈1100 mg; compatible with EIA-481-B tape-and-reel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (Bidirectional) | Reversible current path | No polarity marking; symmetric conduction in either direction - simplifies layout and eliminates orientation errors in high-density RF/power modules. |
| End Cap (Both Ends) | Thermal & electrical interface | Direct solderable metal end caps serve as both current terminals and primary heat dissipation paths to PCB copper; enables low-inductance mounting. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid, salt-laden naval environments. |
| Category 1 metallurgical bonds | Ensures mechanical integrity under shock/vibration up to 100 g; validated per MIL-STD-883 Method 2002. |
| Triple-layer passivation | Blocks surface leakage paths and prevents dendritic growth under high-humidity bias stress (85 °C/85% RH). |
| MIL-PRF-19500/516 JANTXV qualification | Guarantees lot traceability, 100% screening, and burn-in per military reliability requirements - mandatory for DoD procurement. |
| Non-sensitive to ESD | Withstands ≥30 kV HBM per MIL-STD-750 Method 1020 without parameter shift - eliminates need for ESD-safe handling in production. |
Applications
| Avionics Power Distribution | Radar Front-End Protection |
|---|---|
Use Scenario: Protection of 28 V DC bus inputs in flight control computers against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed directly across input terminals to limit transient excursions to ≤14.5 V. Use Value: Prevents latch-up in downstream DC-DC controllers by holding rail voltage within ±10% of nominal during 100 A surges. |
Use Scenario: Shielding LNA and mixer inputs in X-band radar receivers from ESD events during antenna maintenance. IC Role / Device Role / Timing Role: Fast-response TVS shunting ESD energy before it reaches GaAs MMICs with <100 V HBM rating. Use Value: Maintains signal integrity by clamping sub-100 ps ESD pulses to <15 V, avoiding permanent gate oxide damage. |
| Missile Guidance Electronics | Nuclear Command & Control Systems |
Use Scenario: Safeguarding inertial measurement unit (IMU) sensor interfaces exposed to EMP-like fast transients during launch vibration. IC Role / Device Role / Timing Role: Standoff-clamp device mounted at connector entry point to divert surge current away from analog front-end ASICs. Use Value: Enables uninterrupted operation after 50 kV/m radiated EMP exposure due to robust 1500 W pulse handling and radiation hardness. |
Use Scenario: Hardening serial communication lines (RS-422/485) in hardened command bunkers against lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Bidirectional line protector on differential pairs, leveraging symmetric clamping to preserve common-mode rejection. Use Value: Sustains data integrity under 10/1000 µs surges up to 103.4 A without bit errors or receiver saturation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6142US | Commercial-grade version; lacks JANTXV screening, 100% lot testing, and extended temperature validation. | Not approved for DoD or NASA Class B/C programs; limited to non-safety-critical industrial controls. | Select only when full MIL-PRF-19500/516 compliance is not required and cost sensitivity outweighs long-term reliability needs. |
| JANTXV1N6141AUS/TR | Lower VWM (6.9 V) and VC (13.4 V); 111.9 A IPP; identical package and qualification level. | Better suited for 24 V systems where tighter clamping margin is needed; slightly reduced surge headroom. | Choose when system VWM tolerance requires <7.0 V standoff or when lower clamping voltage improves downstream IC margin. |
Compared with JANTXV1N6142AUS/TR, the commercial 1N6142US sacrifices military screening and temperature validation for cost reduction, while JANTXV1N6141AUS/TR trades 0.7 V higher VWM for 1.1 V lower clamping - enabling finer voltage-margin tuning in 24–28 V platforms without changing board layout or qualification status.
Availability
JANTXV1N6142AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, radar front-end protection, missile guidance electronics, and nuclear command & control systems requiring stable component supply under long-lifecycle, high-reliability procurement frameworks.
Supply support for JANTXV1N6142AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JANTXV1N6142AUS/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in mission-critical electronic systems exposed to lightning, EMP, ESD, and harsh environmental stress.
FAQ
What is the maximum clamping voltage of JANTXV1N6142AUS/TR under a 10/1000 µs surge?
The JANTXV1N6142AUS/TR has a maximum clamping voltage (VC) of 14.5 V when subjected to its rated peak pulse current of 103.4 A under the standard 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and guarantees consistent overvoltage limiting across all JANTXV-screened lots. The JANTXV1N6142AUS/TR maintains this clamping performance from −55 °C to +125 °C ambient.
Is JANTXV1N6142AUS/TR RoHS compliant?
No, JANTXV1N6142AUS/TR is not RoHS compliant. It uses tin/lead terminal plating per MIL-PRF-19500/516 requirements and is intended for high-reliability military applications where leaded finishes ensure superior solder joint integrity and thermal fatigue resistance. RoHS-compliant versions (e.g., with matte-tin plating) are available only in commercial-grade variants like 1N6142AUS, not in JANTXV-qualified parts.
What does the "A" suffix in JANTXV1N6142AUS/TR signify?
The "A" suffix in JANTXV1N6142AUS/TR indicates standard voltage tolerance: minimum breakdown voltage (VBR) of 9.50 V at 125 mA test current, versus non-A parts which have 5% lower VBR, 5% higher VC, and 5% lower IPP. This ensures tighter parametric control for precision clamping applications. The JANTXV1N6142AUS/TR meets all electrical specifications listed in Microsemi T4-LDS-0278-1 Rev. 2.
Can JANTXV1N6142AUS/TR be used in surface-mount reflow processes?
Yes, JANTXV1N6142AUS/TR supports standard leaded reflow profiles with a maximum solder temperature of 260 °C for 10 seconds, as specified in MIL-STD-202 Method 210. Its SQ-MELF glass package withstands thermal shock without cracking or seal degradation. The JANTXV1N6142AUS/TR must be mounted using tin/lead solder paste and verified per IPC-J-STD-001 Class 3 requirements for high-reliability assemblies.
How does JANTXV1N6142AUS/TR differ from commercial 1N6142AUS in reliability testing?
JANTXV1N6142AUS/TR undergoes full MIL-PRF-19500/516 screening including 100% lot acceptance testing, burn-in at 150 °C for 168 hours, and temperature cycling from −65 °C to +150 °C for 500 cycles - none of which apply to commercial 1N6142AUS. The JANTXV1N6142AUS/TR also carries full traceability to wafer lot and assembly batch, meeting DoD AS9100 and NASA EEE-INST-002 requirements.
JANTXV1N6142AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.6V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 103.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6142AUS/TR FAQ
1.How can I place an order for JANTXV1N6142AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6142AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6142AUS/TR reliable?
The price and inventory of JANTXV1N6142AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6142AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6142AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6142AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6142AUS/TR?
JANTXV1N6142AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6142AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6142AUS/TR?
For technical support, including JANTXV1N6142AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6142AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6142AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6142AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6142AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6142AUS/TR?
All JANTXV1N6142AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6142AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6142AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6142AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6142AUS/TR Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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