Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTXV1N6145US/TR

Part No.:
JANTXV1N6145US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANTXV1N6145US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,458

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTXV1N6145US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 9.9 V working standoff voltage (VWM), 12.35 V minimum breakdown voltage (V(BR)) at 100 mA, and clamps transients to 18.2 V at 82.4 A peak pulse current (IPP), delivering 1500 W peak pulse power for 10/1000 µs waveform in high-reliability military avionics power rail protection.

For engineers reviewing the JANTXV1N6145US/TR datasheet, JANTXV1N6145US/TR pinout, JANTXV1N6145US/TR application, or JANTXV1N6145US/TR equivalent, this part supports ESD/EFT protection per IEC61000-4-2/-4-4, lightning-induced surge suppression per IEC61000-4-5, and operates across –55 °C to +175 °C junction temperature with Category 1 metallurgical bonds and triple-layer passivation.

Technical Context

This TVS diode uses hard-glass hermetic construction with tungsten slugs and tin/lead-plated copper terminals, enabling robust transient energy absorption without void formation. Its bidirectional architecture eliminates polarity concerns and supports symmetric clamping on both positive and negative excursions.

The device achieves 1500 W peak pulse power (10/1000 µs) with thermal resistance of 5.0 °C/W (junction-to-end cap), and linearly derates from 5.0 W off-state power at TEC = 150 °C to zero at 175 °C. Standby current remains ≤20 µA at 9.9 V VWM.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 9.9 V - Maximum continuous DC or repetitive peak voltage applied without triggering conduction.
V(BR) min 12.35 V @ 100 mA - Guaranteed breakdown onset under standardized test current; defines turn-on threshold.
VC @ IPP 18.2 V @ 82.4 A - Clamped voltage during full-rated 10/1000 µs surge; determines protected circuit stress level.
PPP 1500 W - Peak transient power handling capability for standard lightning-surge waveform.
TJ Range –55 °C to +175 °C - Full military-grade operating junction temperature range without derating loss.
RθJEC 5.0 °C/W - Thermal resistance from junction to end cap; enables direct heatsinking via PCB pads or mounting surface.

Pinout & Package

Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), with square-end-cap terminals for precise SMT placement. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Transient conduction path No polarity marking; either terminal serves as anode or cathode depending on transient polarity - enables single-device bidirectional clamping.
End Cap (both ends) Thermal & electrical interface Direct metal-to-PCB contact for low-inductance surge return path and junction heat extraction (RθJEC = 5.0 °C/W).

Key Features

Feature Design Value
Voidless hermetic seal Eliminates internal delamination risk under thermal cycling or high-humidity operation - critical for 20+ year field life in aerospace systems.
Category 1 metallurgical bonds Internal tungsten-copper interconnects withstand >100,000 thermal cycles and >50 g mechanical shock without bond fatigue.
Triple-layer passivation SiO₂/Si₃N₄/SiO₂ stack prevents moisture ingress and ion migration - maintains V(BR) stability after 1000 hrs @ 85 °C/85% RH.
MIL-PRF-19500/516 JANTXV qualification Includes lot traceability, 100% burn-in, and parametric screening per MIL-STD-750 - ensures zero infant mortality in deployed hardware.

Applications

Avionics Power Distribution Military Vehicle ECUs

Use Scenario: Protection of 28 V DC bus inputs in flight control computers against load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at connector entry point before upstream filtering.

Use Value: Limits induced surges to ≤18.2 V, preserving integrity of downstream 3.3 V/5 V logic rails and ADC reference inputs.

Use Scenario: Input protection for engine control units exposed to ISO 7637-2 Pulse 1, 2a, and 5a waveforms in tracked vehicle platforms.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on battery-supplied 24 V sensor and actuator interfaces.

Use Value: Withstands 1500 W pulses without degradation, meeting MIL-STD-1275E Class III surge requirements.

Satellite Power Conditioning Tactical Radio Front-Ends

Use Scenario: Secondary protection on regulated 12 V outputs of radiation-hardened DC/DC converters in LEO payloads.

IC Role / Device Role / Timing Role: Final-stage transient suppressor before FPGA power pins and analog front-end ICs.

Use Value: Inherent radiation hardness (per MicroNote 050) and –55 °C to +175 °C operation ensure reliability in vacuum thermal cycling.

Use Scenario: RF power amplifier bias line protection in manpack radios subjected to ESD events during field handling.

IC Role / Device Role / Timing Role: Fast-response clamping device on PA drain supply, placed within 5 mm of RF transistor die.

Use Value: Sub-1 ns response time and <20 µA standby current prevent RF desense while maintaining low quiescent power draw.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6145US/TR Commercial-grade version; same VWM (9.9 V), VC (18.2 V), and PPP (1500 W), but not MIL-qualified - no JANTXV screening or lot traceability. Lacks MIL-PRF-19500/516 qualification; unsuitable for DoD procurement or space-qualified designs. Select only for non-military industrial prototypes where cost sensitivity outweighs long-term reliability assurance.
JANTXV1N6144US/TR Lower VWM (9.1 V), lower V(BR) min (11.40 V), higher IPP (88.8 A), identical PPP (1500 W) and package. Better suited for 9 V nominal systems; tighter clamping margin vs. 9.9 V rail but reduced headroom before conduction. Choose when protecting circuits with lower absolute maximum input ratings - e.g., legacy 9 V analog sensors or microcontrollers.

Compared with JANTXV1N6145US/TR, the commercial 1N6145US/TR omits military screening and traceability but matches electrical specs, while JANTXV1N6144US/TR offers lower standoff for tighter 9 V system margins - neither is pin-compatible drop-in due to distinct VWM/V(BR) design points requiring layout review.

Availability

JANTXV1N6145US/TR is available at Aetrix Electronics and suitable for avionics power distribution, military vehicle ECUs, satellite power conditioning, and tactical radio front-ends requiring stable component supply across extended product lifecycles and defense logistics channels.

Supply support for JANTXV1N6145US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

JANTXV1N6145US/TR belongs to Microsemi's MIL-qualified TVS family designed specifically for mission-critical surge protection in environments where failure is unacceptable - including launch vehicles, airborne radar, and nuclear command systems.

FAQ

What is the maximum clamping voltage of JANTXV1N6145US/TR under full-rated surge conditions?

The JANTXV1N6145US/TR clamps to a maximum of 18.2 V when subjected to its rated 82.4 A peak pulse current (IPP) with a 10/1000 µs waveform. This value is guaranteed across the full –55 °C to +175 °C junction temperature range and forms the basis for downstream circuit overvoltage margining in designs using JANTXV1N6145US/TR.

Is JANTXV1N6145US/TR RoHS compliant?

No, JANTXV1N6145US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants (e.g., 1N6145AUS), not for JANTXV-level military-qualified parts like JANTXV1N6145US/TR, which retain tin/lead plating for enhanced solder joint reliability under thermal cycling.

Does JANTXV1N6145US/TR require polarity-aware PCB layout?

No, JANTXV1N6145US/TR is a bidirectional TVS and has no polarity marking. Either end functions identically as anode or cathode depending on transient polarity, allowing orientation-agnostic placement on PCBs - a key advantage for compact, high-density military layouts where routing flexibility is constrained.

What is the thermal resistance specification for JANTXV1N6145US/TR, and how does it impact heatsinking?

JANTXV1N6145US/TR has a junction-to-end cap thermal resistance (RθJEC) of 5.0 °C/W. This low value enables effective heat extraction through direct end-cap contact with copper pads or metal-core PCBs, supporting sustained off-state power dissipation up to 5.0 W at TEC = 150 °C - critical for thermal management in sealed avionics enclosures.

How does JANTXV1N6145US/TR differ from the "A" suffix variant 1N6145AUS?

JANTXV1N6145US/TR and 1N6145AUS share identical electrical parameters (VWM = 9.9 V, V(BR) min = 12.35 V, VC = 18.2 V), but differ in qualification: JANTXV1N6145US/TR is fully MIL-PRF-19500/516 qualified at JANTXV level with 100% screening, while 1N6145AUS is commercial-grade with no military testing or traceability - making JANTXV1N6145US/TR mandatory for DoD contracts.

JANTXV1N6145US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
9.9V
Voltage - Breakdown (Min):
12.35V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
82.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANTXV1N6145US/TR FAQ

1.How can I place an order for JANTXV1N6145US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6145US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6145US/TR reliable?

The price and inventory of JANTXV1N6145US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6145US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N6145US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6145US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6145US/TR?

JANTXV1N6145US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6145US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6145US/TR?

For technical support, including JANTXV1N6145US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6145US/TR requirements.

6.How does Aetrix verify that JANTXV1N6145US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6145US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6145US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N6145US/TR?

All JANTXV1N6145US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6145US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6145US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N6145US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTXV1N6145US/TR Tags

  • JANTXV1N6145US/TR
  • JANTXV1N6145US/TR PDF
  • JANTXV1N6145US/TR Datasheet
  • JANTXV1N6145US/TR Specifications
  • JANTXV1N6145US/TR Images
  • Microchip Technology
  • Microchip Technology JANTXV1N6145US/TR
  • Buy JANTXV1N6145US/TR
  • JANTXV1N6145US/TR Price
  • JANTXV1N6145US/TR Distributor
  • JANTXV1N6145US/TR Supplier
  • JANTXV1N6145US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER