Microchip Technology JANTXV1N6147AUS/TR
- Part No.:
- JANTXV1N6147AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6147AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

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Product details
Overview
JANTXV1N6147AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level, with 12.2 V working standoff voltage (VWM), 15.20 V minimum breakdown voltage (V(BR)) at 75 mA, and 22.3 V clamping voltage (VC) at 67.3 A peak pulse current (IPP) for 10/1000 µs waveform. It delivers 1500 W peak pulse power in a rugged C-package (SQ-MELF) for lightning surge and ESD protection in avionics power interfaces.
For engineers reviewing the JANTXV1N6147AUS/TR datasheet, JANTXV1N6147AUS/TR pinout, JANTXV1N6147AUS/TR application, or JANTXV1N6147AUS/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, 1500 W 10/1000 µs surge rating, -55°C to +175°C operating junction temperature range, and compatibility with high-reliability PCB assembly processes including 260°C soldering.
Technical Context
This TVS operates bidirectionally without polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass hermetic seal to ensure radiation hardness and long-term stability under thermal cycling. Its clamping response is defined by a 10/1000 µs double-exponential current pulse, with VC measured at IPP = 67.3 A and thermal resistance RθJEC = 5.0 °C/W.
The device exhibits a temperature coefficient of breakdown voltage αV(BR) = 0.08 %/°C and derates linearly above 150 °C case temperature to zero power at 175 °C. Standby current ID is ≤20 µA at VWM = 12.2 V, confirming low leakage in standby operation across military temperature extremes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.2 V - Maximum continuous reverse/forward voltage before conduction begins; sets system operating margin below clamping threshold. |
| V(BR) min | 15.20 V @ 75 mA - Confirmed breakdown onset under standardized test current; ensures predictable turn-on during transients. |
| VC @ IPP | 22.3 V @ 67.3 A - Clamped voltage during 10/1000 µs surge; defines maximum stress imposed on protected circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; enables robust protection against IEC61000-4-5 Level 3–4 surges. |
| TJ Range | -55°C to +175°C - Full military-grade junction temperature range; supports operation in engine bays, radar modules, and space-qualified systems. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables accurate thermal modeling for end-cap heatsinking in high-power pulse scenarios. |
| ID @ VWM | ≤20 µA - Low leakage current at rated standoff; minimizes standby power loss and avoids false triggering in high-impedance circuits. |
Pinout & Package
Package: C (SQ-MELF) - Hermetically sealed voidless hard-glass case with tungsten slugs and tin/lead-plated copper terminals; square-end-cap geometry for automated placement and mechanical robustness. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric conduction in both directions; either end functions as anode or cathode depending on transient polarity. |
| End Cap (both ends) | Thermal and electrical interface | Direct thermal path to PCB pad; dual-end-cap construction enables mounting on two pads with equal current sharing and minimal inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-STD-750, critical for aerospace deployment. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year service life in humid or vacuum environments. |
| MIL-PRF-19500/516 JANTXV qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing-required for DoD and NASA programs. |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration under high humidity and bias, maintaining VWM stability over time. |
Applications
| Aerospace Power Distribution | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protection of 28 V DC primary bus feeders in UAV flight control systems exposed to load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS placed across bus rails to clamp transients up to 1500 W without polarity constraints. Use Value: Prevents latch-up or burnout in downstream DC-DC converters and motor drivers during MIL-STD-461 RS103 events. | Use Scenario: ESD and EFT protection on ARINC 429 receive inputs in cockpit display units. IC Role / Device Role / Timing Role: Fast-response clamping element on differential data lines to limit voltage excursions during IEC61000-4-2 contact discharge. Use Value: Maintains signal integrity while meeting DO-160 Section 22 Level 3 radiated susceptibility requirements. |
| Tactical Radio Front-End | Satellite Power Conditioning |
Use Scenario: Surge suppression on RF power amplifier bias lines subjected to EMP and antenna coupling events. IC Role / Device Role / Timing Role: Standoff-clamp TVS mounted directly at PA input to absorb fast-rising transients before they reach GaN transistor gates. Use Value: Enables compliance with MIL-STD-464 CS115 conducted transient limits without adding series impedance. | Use Scenario: Input protection for radiation-hardened DC-DC converters in LEO satellite power management units. IC Role / Device Role / Timing Role: High-reliability TVS selected for total ionizing dose (TID) tolerance and displacement damage immunity. Use Value: Leverages inherent radiation hardness per MicroNote 050, eliminating need for additional shielding or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6146AUS/TR | VWM = 11.4 V, V(BR) min = 14.25 V, VC = 21.0 V @ 71.4 A - lower clamping threshold and higher IPP than JANTXV1N6147AUS/TR. | Better suited for 12 V nominal systems requiring tighter clamping margin; slightly reduced standoff headroom. | Select when system VMAX is ≤11.4 V and lower VC is prioritized over standoff margin. |
| JANTXV1N6148AUS/TR | VWM = 13.7 V, V(BR) min = 17.10 V, VC = 25.1 V @ 59.8 A - higher standoff and clamping, lower IPP. | Preferred for 15 V or 16 V rail protection where higher VWM prevents nuisance conduction during ripple or overshoot. | Select when protecting higher-voltage rails where 12.2 V VWM would be insufficiently conservative. |
Compared with JANTXV1N6146AUS/TR and JANTXV1N6148AUS/TR, the JANTXV1N6147AUS/TR provides optimal balance between 12.2 V system compatibility and 22.3 V clamping performance, making it the standard choice for 28 V DC distribution nodes where moderate standoff and precise clamping are jointly required.
Availability
JANTXV1N6147AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics data bus protection, tactical radio front-end design, satellite power conditioning, and high-reliability industrial control systems requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N6147AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-qualified components.
The JANTXV1N6147AUS/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in mission-critical platforms where failure is not an option-including launch vehicles, fighter aircraft, and deep-space probes.
FAQ
What is the clamping voltage of JANTXV1N6147AUS/TR under a 10/1000 µs surge?
The JANTXV1N6147AUS/TR has a maximum clamping voltage (VC) of 22.3 V when subjected to a 10/1000 µs impulse waveform at a peak pulse current (IPP) of 67.3 A. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full -55°C to +175°C junction temperature range. The clamping performance remains stable due to triple-layer passivation and Category 1 metallurgical bonding.
Is JANTXV1N6147AUS/TR RoHS compliant?
No, JANTXV1N6147AUS/TR is not RoHS compliant. As a JANTXV-qualified military-grade part, it uses tin/lead plating on copper terminals per MIL-PRF-19500/516 requirements. RoHS-compliant versions (e3 suffix) are only available for commercial-grade variants (e.g., 1N6147AUS without JAN/JANTXV prefix), not for JANTXV1N6147AUS/TR.
What package type does JANTXV1N6147AUS/TR use, and what are its key mechanical features?
JANTXV1N6147AUS/TR uses the C-package (SQ-MELF), a hermetically sealed voidless hard-glass case with tungsten slugs and square-end-cap terminals. Key mechanical features include 0.183–0.202 in body diameter (BD), 0.205–0.245 in body length (BL), and compatibility with EIA-481-B tape-and-reel packaging. The square ends enable precise pick-and-place alignment and low-inductance PCB mounting.
How does JANTXV1N6147AUS/TR differ from commercial-grade 1N6147AUS?
JANTXV1N6147AUS/TR differs from commercial 1N6147AUS in screening, reliability, and environmental qualification: it undergoes full MIL-PRF-19500/516 JANTXV-level testing-including temperature cycling, burn-in, and lot acceptance-ensuring operation from -55°C to +175°C. Commercial 1N6147AUS lacks this screening, has narrower temperature range, and may use matte-tin RoHS plating instead of tin/lead.
Can JANTXV1N6147AUS/TR be used in bidirectional signal line protection?
Yes, JANTXV1N6147AUS/TR is inherently bidirectional and requires no polarity marking, making it suitable for protecting AC-coupled or floating signal lines such as MIL-STD-1553 buses, RS-422 differential pairs, or transformer-isolated interfaces. Its symmetrical V-I characteristics ensure identical clamping in both directions, with VC = 22.3 V regardless of transient polarity.
JANTXV1N6147AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 12.2V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 67.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6147AUS/TR FAQ
1.How can I place an order for JANTXV1N6147AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6147AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6147AUS/TR reliable?
The price and inventory of JANTXV1N6147AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6147AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6147AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6147AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6147AUS/TR?
JANTXV1N6147AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6147AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6147AUS/TR?
For technical support, including JANTXV1N6147AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6147AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6147AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6147AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6147AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6147AUS/TR?
All JANTXV1N6147AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6147AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6147AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6147AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6147AUS/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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