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Microchip Technology JANTXV1N6149US/TR
- Part No.:
- JANTXV1N6149US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6149US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,558
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Product details
Overview
JANTXV1N6149US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF glass package, rated for 1500 W peak pulse power (10/1000 µs), with 15.2 V working standoff voltage (VWM), 19.0 V minimum breakdown voltage (VBR @ 65 mA), and 27.7 V clamping voltage (VC @ 54.2 A). It delivers ESD/EFT protection per IEC61000-4-2/4-4 and lightning surge immunity per IEC61000-4-5 in high-reliability aerospace and defense power interfaces.
For engineers reviewing the JANTXV1N6149US/TR datasheet, JANTXV1N6149US/TR pinout, JANTXV1N6149US/TR application, or JANTXV1N6149US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, bidirectional clamping behavior, 5.0 °C/W junction-to-end-cap thermal resistance, and compatibility with automated surface-mount assembly using EIA-481-B tape-and-reel.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, leveraging hard-glass construction and Category 1 internal metallurgical bonds to ensure reliability under extreme thermal cycling (-55 °C to +175 °C) and high-surge stress. Its clamping action begins at VBR = 19.0 V (min) and limits transient energy to ≤27.7 V at 54.2 A peak pulse current.
The device is optimized for DC power rail protection where low standby leakage (<5 µA at VWM) and stable temperature coefficient (αV(BR) = 0.085 %/°C) are critical. It supports steady-state dissipation up to 3.0 W at 25 °C ambient and derates linearly above 150 °C end-cap temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 1500 W - sustains single high-energy transients without failure in avionics power distribution |
| Working Standoff Voltage (VWM) | 15.2 V - maximum continuous DC voltage before conduction begins; matches 12 V nominal systems with margin |
| Breakdown Voltage (VBR) | 19.0 V min @ 65 mA - precise threshold for initiating clamping during overvoltage events |
| Clamping Voltage (VC) | 27.7 V @ 54.2 A - limits downstream voltage stress during worst-case surge conditions |
| Junction Temp Range | -55 °C to +175 °C - enables operation in engine bay, satellite payload, and missile guidance electronics |
| Thermal Resistance (RθJEC) | 5.0 °C/W - enables efficient heat transfer to PCB copper or heatsink via end-cap mounting |
| Standby Current (ID) | ≤5 µA @ VWM - negligible leakage in always-on military subsystems with tight power budgets |
Pinout & Package
Package: SQ-MELF (square-end-cap metalized glass cylinder), hermetically sealed, voidless, with tin/lead-plated copper terminals. Dimensions: BD = 4.65–5.13 mm, BL = 5.21–6.22 mm, ECT = 0.48–0.71 mm. Weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (bidirectional) | Transient conduction path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity |
| End Cap (both ends) | Thermal and electrical interface | Primary heat sink path (RθJEC = 5.0 °C/W); soldered directly to PCB pads per EIA-481-B layout |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled or floating DC lines without polarity constraints; eliminates need for dual-device placement |
| Category 1 metallurgical bonds | Ensures bond integrity under mechanical shock, vibration, and thermal cycling per MIL-STD-883 |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year service life in sealed enclosures |
| JANTXV qualification | Fully tested to MIL-PRF-19500/516 screening levels including burn-in, temperature cycling, and lot acceptance tests |
| IEC61000-4-2/4-4/4-5 compliance | Validated for system-level ESD (±8 kV contact), EFT (±2 kV), and surge (line-to-ground 1 kV) |
Applications
| Aerospace Power Distribution | Defense Radar Front-End |
|---|---|
Use Scenario: Protection of 12 V DC bus feeding flight control actuators against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across input rails to limit transient excursions to <28 V. Use Value: Prevents latch-up or damage to downstream DC-DC converters and FPGAs during 1500 W surge events. |
Use Scenario: Shielding RF receiver LNA bias lines from ESD events during field maintenance or antenna coupling. IC Role / Device Role / Timing Role: Low-leakage transient suppressor mounted directly at connector entry point. Use Value: Maintains sub-5 µA standby current while clamping ±8 kV ESD pulses to <28 V within nanoseconds. |
| Satellite Payload Power | Military Vehicle Data Bus |
Use Scenario: Safeguarding 15 V regulated supplies for star tracker imagers exposed to space radiation-induced transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary ionization spikes on power inputs. Use Value: Withstands total ionizing dose >100 krad(Si) and provides reliable clamping after proton irradiation. |
Use Scenario: Protecting CAN FD transceiver power pins from automotive ISO 7637-2 pulse 5a/b surges during ignition. IC Role / Device Role / Timing Role: Primary surge suppression stage ahead of local regulators feeding data link ICs. Use Value: Limits 10/1000 µs surge to 27.7 V while surviving repeated 1500 W pulses without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6149US/TR | Commercial-grade version; same VWM, VBR, VC, but not MIL-qualified; RoHS-compliant matte-tin plating available | Lacks JANTXV screening; unsuitable for flight-critical or mission-essential hardware | Select only for non-military industrial prototypes or cost-sensitive ground support equipment |
| JANTXV1N6148US/TR | Lower VWM = 13.7 V, VBR = 17.1 V min, VC = 25.1 V @ 59.8 A; identical package and qualification level | Better suited for 12 V systems with tighter clamping margin; higher IPP allows longer surge duration tolerance | Choose when protecting lower-voltage rails where 25.1 V clamping is acceptable and higher surge current headroom is needed |
Compared with JANTXV1N6149US/TR, the commercial 1N6149US/TR offers identical electrical specs but lacks military screening and radiation hardness, while JANTXV1N6148US/TR trades 1.5 V higher clamping headroom for improved surge current capacity-making it preferable for 12 V systems requiring extended pulse handling.
Availability
JANTXV1N6149US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, defense radar front-end protection, satellite payload power conditioning, and military vehicle data bus hardening requiring stable component supply across long production lifecycles.
Supply support for JANTXV1N6149US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JANTXV1N6149US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for military-grade transient suppression in mission-critical platforms where failure is not an option.
FAQ
What is the maximum clamping voltage of JANTXV1N6149US/TR under a 10/1000 µs surge?
The JANTXV1N6149US/TR has a maximum clamping voltage (VC) of 27.7 V when subjected to its rated peak pulse current of 54.2 A under a 10/1000 µs waveform. This value is guaranteed per MIL-PRF-19500/516 test conditions and reflects worst-case performance across temperature and lot variations. The JANTXV1N6149US/TR maintains this clamping level without degradation after multiple surge events when operated within thermal limits.
Is JANTXV1N6149US/TR compatible with lead-free reflow processes?
JANTXV1N6149US/TR is qualified for solder reflow at 260 °C for 10 seconds, meeting standard lead-free process requirements. Its tin/lead-plated terminals are designed for compatibility with both SnPb and Pb-free solder pastes. However, RoHS-compliant matte-tin plating is only available on commercial-grade variants (e.g., 1N6149US/TR), not on JANTXV versions, which retain traditional tin/lead finish per MIL specification.
Does JANTXV1N6149US/TR require polarity-aware PCB layout?
No-JANTXV1N6149US/TR is a bidirectional TVS with no polarity marking or internal asymmetry; either end functions identically as anode or cathode depending on transient polarity. PCB layout requires symmetric pad geometry per SQ-MELF footprint, but orientation is arbitrary. This simplifies placement and eliminates risk of reverse installation during automated assembly of the JANTXV1N6149US/TR.
What is the standby leakage current of JANTXV1N6149US/TR at its rated standoff voltage?
JANTXV1N6149US/TR exhibits a maximum standby current (ID) of 5 µA when biased at its rated working standoff voltage (VWM) of 15.2 V and measured at 25 °C. This ultra-low leakage ensures minimal power drain in always-on military subsystems and preserves battery life in portable defense electronics powered by the JANTXV1N6149US/TR-protected rails.
How does JANTXV1N6149US/TR perform under extreme temperature conditions?
JANTXV1N6149US/TR is rated for junction and storage temperatures from -55 °C to +175 °C and undergoes full MIL-PRF-19500/516 temperature cycling validation. Its breakdown voltage drift is controlled by a temperature coefficient of 0.085 %/°C, ensuring predictable clamping behavior across operational extremes. Thermal resistance of 5.0 °C/W enables reliable operation even when mounted on minimal copper areas in the JANTXV1N6149US/TR application.
JANTXV1N6149US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 15.2V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 54.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6149US/TR FAQ
1.How can I place an order for JANTXV1N6149US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6149US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6149US/TR reliable?
The price and inventory of JANTXV1N6149US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6149US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6149US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6149US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6149US/TR?
JANTXV1N6149US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6149US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6149US/TR?
For technical support, including JANTXV1N6149US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6149US/TR requirements.
6.How does Aetrix verify that JANTXV1N6149US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6149US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6149US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6149US/TR?
All JANTXV1N6149US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6149US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6149US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6149US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6149US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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