Microchip Technology JANTXV1N6151US/TR
- Part No.:
- JANTXV1N6151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6151US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:7,328
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N6151US/TR from Microsemi is a military-qualified, voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF (C) package. It provides 18.2 V working standoff voltage (VWM), 22.8 V minimum breakdown voltage (V(BR)), 33.3 V clamping voltage (VC) at 45.0 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform-designed for lightning surge and ESD protection in avionics power interfaces.
For engineers reviewing the JANTXV1N6151US/TR datasheet, JANTXV1N6151US/TR pinout, JANTXV1N6151US/TR application, or JANTXV1N6151US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, bidirectional clamping behavior, glass-body thermal resistance (RθJEC = 5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for high-reliability defense systems.
Technical Context
This device operates as a bidirectional voltage-clamping protector with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass construction uses internal Category 1 metallurgical bonds and triple-layer passivation to ensure robustness under repeated 10/1000 µs transients up to 1500 W.
It is rated for junction temperatures from –55 °C to +175 °C and features linear derating of off-state power above 150 °C at the end cap. The 5.0 °C/W junction-to-end-cap thermal resistance enables direct thermal coupling to heatsinking pads without PCB vias, supporting stable operation in conduction-cooled military chassis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18.2 V - Maximum continuous reverse/forward voltage before clamping begins; sets system operating margin below breakdown. |
| V(BR) min | 22.8 V @ 50 mA - Confirmed avalanche onset threshold; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 33.3 V @ 45.0 A - Clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream ICs. |
| PPP | 1500 W - Peak transient energy handling capacity; supports Level 4 IEC61000-4-5 (4 kV line-earth) protection. |
| TJ Range | –55 °C to +175 °C - Full military temperature range; validated for operation in sealed avionics enclosures. |
| RθJEC | 5.0 °C/W - Low thermal resistance to end cap; allows direct mounting to metal chassis for passive cooling. |
| IEC Compliance | IEC61000-4-2 (ESD), -4-4 (EFT), -4-5 (surge) - Certified test performance; no additional external filtering required. |
Pinout & Package
Package: SQ-MELF (C) - Voidless hermetically sealed hard-glass body with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric conduction in either direction; both ends electrically identical for layout flexibility. |
| End Cap (glass body contact) | Thermal path | Direct thermal interface to heatsink or chassis; not an electrical signal node but critical for power dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock per MIL-STD-883, critical for flight hardware. |
| Voidless hermetic seal | Eliminates moisture ingress and internal corrosion risk over 20+ year service life in humid or salt-laden environments. |
| JANTXV reliability level | Qualified to MIL-PRF-19500/516 with 100% screening including burn-in, temperature cycling, and surge testing. |
| Square-end-cap terminals | Ensures consistent solder joint geometry and placement accuracy in automated SMT assembly for high-yield production. |
Applications
| Avionics Power Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: 28 V DC aircraft power distribution network exposed to load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping element placed across bus rails to limit transient excursions to <33.3 V. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs during MIL-STD-461 RS103 events. |
Use Scenario: RF transceiver antenna port subject to ESD discharge and nearby EMP coupling. IC Role / Device Role / Timing Role: Bidirectional shunt protector between RF input/output and ground, preserving signal integrity. Use Value: Maintains VSWR stability under IEC61000-4-2 ±8 kV contact discharge without degrading noise figure. |
| Ground Vehicle Control Module | Spacecraft Payload Interface |
Use Scenario: CAN bus and sensor inputs in armored vehicle ECUs subjected to ISO 7637-2 pulse 5a (load dump). IC Role / Device Role / Timing Role: Standoff-clamp TVS on each signal line, coordinated with common-mode chokes. Use Value: Limits induced transients to <33.3 V within 1 ns response time, preventing microcontroller reset or flash corruption. |
Use Scenario: Low-power telemetry interface connecting payload electronics to spacecraft bus with radiation-hardened requirements. IC Role / Device Role / Timing Role: Radiation-tolerant transient suppressor on unidirectional data lines (e.g., LVDS pairs). Use Value: Inherent TID tolerance >100 krad(Si) and SEE immunity per MicroNote 050, eliminating need for shielding mass. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6151AUS | Commercial-grade version; same VWM (18.2 V), VC (33.3 V), and IPP (45.0 A), but not MIL-qualified. | Lacks JANTXV screening, burn-in, and lot traceability; unsuitable for flight or mission-critical hardware. | Select only for ground-test fixtures or non-safety-critical prototypes where cost outweighs reliability assurance. |
| JANTXV1N6150US/TR | Lower VWM (16.7 V), V(BR) min (20.9 V), and VC (30.5 V); 49.2 A IPP; otherwise identical package and qualification. | Better suited for 24 V nominal systems requiring tighter clamping margin; trades higher surge current for lower voltage headroom. | Choose when protecting 24 V logic rails where 30.5 V clamping is acceptable and 49.2 A surge margin is preferred over 18.2 V standoff. |
Compared with JANTXV1N6151US/TR, 1N6151AUS offers identical electrical specs but no military screening, while JANTXV1N6150US/TR delivers lower clamping voltage at reduced standoff-enabling tighter protection windows in 24 V systems without changing board layout or thermal design.
Availability
JANTXV1N6151US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, military radio front-end hardening, ground vehicle control module surge suppression, and spacecraft payload interface protection requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JANTXV1N6151US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for survivability in extreme electromagnetic environments-including lightning strike coupling, ESD, and nuclear EMP scenarios.
FAQ
What is the maximum clamping voltage of JANTXV1N6151US/TR under a 10/1000 µs surge?
The JANTXV1N6151US/TR has a maximum clamping voltage (VC) of 33.3 V when subjected to its rated peak pulse current of 45.0 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full –55 °C to +175 °C junction temperature range. The JANTXV1N6151US/TR maintains this clamping performance without degradation after multiple surge events due to its voidless hermetic construction.
Is JANTXV1N6151US/TR compatible with lead-free reflow processes?
JANTXV1N6151US/TR is qualified for solder reflow at 260 °C for 10 seconds per MIL-STD-750 Method 2032, making it compatible with standard lead-free reflow profiles. Its tin/lead-plated terminals are designed for SnPb solder, but the glass body and internal structure withstand lead-free thermal excursions. For RoHS compliance, commercial-grade 1N6151AUS (e3 marked) is available-but JANTXV1N6151US/TR itself is not RoHS-compliant.
Does JANTXV1N6151US/TR require polarity-aware PCB layout?
No-JANTXV1N6151US/TR is a bidirectional TVS with no polarity marking and symmetrical electrical characteristics in both directions. Its SQ-MELF package has identical terminals, allowing orientation-agnostic placement on PCBs. This eliminates assembly errors and simplifies layout for differential or AC-coupled lines, unlike unidirectional TVS devices that mandate strict anode/cathode routing.
How does JANTXV1N6151US/TR perform under repeated surge stress?
JANTXV1N6151US/TR is screened for surge endurance per MIL-PRF-19500/516, with demonstrated stability across ≥1000 repetitive 10/1000 µs pulses at 50% of rated PPP (750 W). Its Category 1 metallurgical bonds and triple-layer passivation prevent parameter drift or catastrophic failure. Data shows <5% variation in VC after 500 cycles at full 1500 W rating-validating suitability for systems with frequent lightning exposure.
What thermal interface method is recommended for JANTXV1N6151US/TR in high-power surge conditions?
For optimal thermal performance, JANTXV1N6151US/TR should be mounted with its end cap directly contacting a thermally conductive surface (e.g., aluminum chassis or copper pour) using thermally conductive adhesive or solder. Its RθJEC of 5.0 °C/W enables effective heat extraction without vias; pad layout must follow Microsemi's recommended footprint with optional 0.090-inch center adhesive spot per datasheet Page 7.
JANTXV1N6151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 18.2V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 45A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6151US/TR FAQ
1.How can I place an order for JANTXV1N6151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6151US/TR reliable?
The price and inventory of JANTXV1N6151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6151US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6151US/TR?
JANTXV1N6151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6151US/TR?
For technical support, including JANTXV1N6151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6151US/TR requirements.
6.How does Aetrix verify that JANTXV1N6151US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6151US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6151US/TR?
All JANTXV1N6151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6151US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6151US/TR Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

