Microchip Technology JANTXV1N6157US/TR
- Part No.:
- JANTXV1N6157US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6157US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

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Product details
Overview
JANTXV1N6157US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 32.7 V working peak standoff voltage (VWM), 40.9 V minimum breakdown voltage (V(BR)) at 30 mA, and clamps transients to 59.1 V at 25.4 A peak pulse current (IPP) for 10/1000 µs waveform, delivering 1500 W peak pulse power in high-reliability military and aerospace power rail protection.
For engineers reviewing the JANTXV1N6157US/TR datasheet, JANTXV1N6157US/TR pinout, JANTXV1N6157US/TR application, or JANTXV1N6157US/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), standoff-to-clamp voltage ratio (VWM/VC = 0.55), and compatibility with automated SMT placement via square-end-cap terminals.
Technical Context
This TVS operates as a bidirectional voltage-clamping device with no polarity marking, relying on symmetrical avalanche breakdown in both directions. Its hard-glass hermetic package incorporates internal Category 1 metallurgical bonds and triple-layer passivation to ensure robustness against ESD (per MIL-STD-750 Method 1020), EFT (IEC61000-4-4), and lightning-induced surges (IEC61000-4-5).
It delivers stable transient suppression across -55 °C to +175 °C junction temperature range, with 0.095 %/°C temperature coefficient of breakdown voltage (αV(BR)). Thermal performance is defined by junction-to-end-cap resistance (RθJEC = 5.0 °C/W), enabling predictable derating above 150 °C end-cap temperature per linear derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 32.7 V - Maximum continuous DC or repetitive peak reverse voltage before conduction begins; sets operating margin below clamping threshold. |
| V(BR) min | 40.9 V @ 30 mA - Minimum voltage at which avalanche breakdown initiates; defines lower bound of functional clamping window. |
| VC @ IPP | 59.1 V @ 25.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected circuitry. |
| PPP | 1500 W - Peak pulse power handling capability; enables protection against high-energy transients without failure. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff voltage; ensures minimal power loss and signal integrity in standby. |
| TJ Range | -55 to +175 °C - Operational junction temperature span; supports deployment in extreme environmental conditions. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; critical for calculating end-cap temperature rise under pulsed or steady-state power dissipation. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass surface-mount case with tungsten slugs and square-end-cap terminals; dimensions per Microsemi T4-LDS-0278-1 Rev. 2 (BD: 0.183–0.202", BL: 0.205–0.245", ECT: 0.019–0.028").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No polarity marking; symmetric terminals conduct equally in either direction during overvoltage events. |
| End Cap (both ends) | Thermal interface & mechanical anchor | Primary heat transfer path to PCB; requires controlled solder joint geometry per pad layout spec (A1=0.310", A2=0.170"). |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock, meeting MIL-PRF-19500/516 JANTXV reliability requirements. |
| Triple-layer passivation | Prevents moisture ingress and surface leakage paths, ensuring long-term stability in humid or contaminated environments. |
| Voidless hermetic seal | Eliminates internal delamination risk during reflow or field operation, preserving electrical characteristics over lifetime. |
Applications
| Aerospace Power Distribution | Military Avionics Data Buses |
|---|---|
Use Scenario: Protection of 28 V DC power rails in satellite bus subsystems exposed to load dump and ESD events. IC Role / Device Role / Timing Role: Bidirectional TVS clamping device placed directly across input rails to limit transient overvoltage. Use Value: Withstands 1500 W surges while maintaining 32.7 V standoff, preventing latch-up or burnout in downstream DC-DC converters and FPGAs. |
Use Scenario: Surge suppression on MIL-STD-1553B data line terminations subject to induced lightning transients. IC Role / Device Role / Timing Role: Low-leakage (5 µA) bidirectional clamp shunting fast-rising common-mode noise without distorting signal integrity. Use Value: Clamps to 59.1 V within nanoseconds, preserving bus timing margins and meeting IEC61000-4-5 Level 3 immunity requirements. |
| Ground Vehicle Engine Control Units | Naval Radar Signal Conditioning |
Use Scenario: Input protection for microcontroller-based ECU modules connected to 12 V battery systems experiencing ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Primary transient suppressor mounted at connector entry point to absorb coupled energy before reaching sensitive logic. Use Value: 0.095 %/°C αV(BR) ensures stable clamping across -40 to +125 °C ambient, eliminating thermal drift-related misfires. |
Use Scenario: Front-end protection of RF receiver LNA inputs in shipboard radar systems vulnerable to EMP coupling. IC Role / Device Role / Timing Role: High-reliability TVS with hermetic glass package deployed in RF shielded enclosures to prevent moisture-induced parameter shift. Use Value: Voidless seal and Category 1 bonds maintain specified VC and IPP after 1000+ thermal cycles, supporting 20-year naval service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6157AUS | Commercial-grade version with same VWM (32.7 V), V(BR) (40.9 V), and VC (59.1 V), but not MIL-qualified. | Lacks JANTXV reliability screening, temperature cycling, and lot traceability required for flight hardware. | Select when cost-sensitive commercial designs require identical electrical specs without military certification. |
| JANTXV1N6156US/TR | Lower VWM (29.7 V), V(BR) (37.1 V), and VC (53.6 V); 28.0 A IPP rating vs. 25.4 A for JANTXV1N6157US/TR. | Better suited for 24 V systems where tighter clamping margin is needed, but less headroom for voltage tolerance drift. | Choose for 24 V rail protection where lower clamping voltage reduces stress on downstream 30 V-rated components. |
Compared with JANTXV1N6157US/TR, 1N6157AUS offers identical electrical performance at lower cost but no MIL qualification, while JANTXV1N6156US/TR trades 3 V higher standoff for 5.5 V lower clamping-enabling tighter protection windows in lower-voltage systems.
Availability
JANTXV1N6157US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military avionics data buses, and ground vehicle engine control units requiring stable component supply with full MIL-PRF-19500/516 traceability and lot-level documentation.
Supply support for JANTXV1N6157US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation hardness, extended temperature operation, and military qualification.
JANTXV1N6157US/TR belongs to Microsemi's MIL-qualified TVS family engineered specifically for mission-critical transient suppression in harsh-environment electronics where failure is not an option.
FAQ
What is the clamping voltage of JANTXV1N6157US/TR at its rated peak pulse current?
The JANTXV1N6157US/TR has a maximum clamping voltage (VC) of 59.1 V when subjected to its rated 10/1000 µs peak pulse current of 25.4 A. This value is measured under standardized test conditions per MIL-PRF-19500/516 and defines the upper voltage limit imposed on protected circuitry during surge events. The JANTXV1N6157US/TR maintains this clamping performance across its full operational temperature range.
Is JANTXV1N6157US/TR suitable for bidirectional signal line protection?
Yes, JANTXV1N6157US/TR is explicitly designed as a bidirectional TVS with no polarity marking and symmetrical avalanche characteristics in both directions. It is commonly used to protect AC-coupled interfaces, differential buses like MIL-STD-1553B, and floating power domains where voltage reversals may occur. Its 32.7 V standoff and 59.1 V clamping apply identically regardless of terminal orientation.
What does the "JANTXV" prefix indicate for JANTXV1N6157US/TR?
The "JANTXV" prefix certifies that JANTXV1N6157US/TR meets the highest reliability tier of MIL-PRF-19500/516, including extended temperature screening (-55 °C to +175 °C), rigorous lot acceptance testing, and full traceability. JANTXV qualification exceeds JANTX and JAN levels, making JANTXV1N6157US/TR appropriate for spaceflight, strategic weapons, and other zero-failure-tolerance applications.
How does the thermal resistance of JANTXV1N6157US/TR affect its steady-state power handling?
JANTXV1N6157US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, meaning each watt of steady-state power raises the junction temperature by 5 °C above the end-cap temperature. Its rated off-state power is 5.0 W up to 150 °C end-cap temperature, then linearly derated to zero at 175 °C. Proper PCB copper area and solder joint quality are essential to maintain safe thermal paths.
Does JANTXV1N6157US/TR comply with RoHS requirements?
No, JANTXV1N6157US/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (marked with "e3") are available only for commercial-grade variants (e.g., 1N6157AUS), not for MIL-qualified JANTXV devices. The JANTXV1N6157US/TR uses tin/lead plating per military specification and retains lead content to ensure solder joint reliability under thermal cycling and mechanical stress.
JANTXV1N6157US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 32.7V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.1V
- Current - Peak Pulse (10/1000µs):
- 25.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6157US/TR FAQ
1.How can I place an order for JANTXV1N6157US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6157US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6157US/TR reliable?
The price and inventory of JANTXV1N6157US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6157US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6157US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6157US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6157US/TR?
JANTXV1N6157US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6157US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6157US/TR?
For technical support, including JANTXV1N6157US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6157US/TR requirements.
6.How does Aetrix verify that JANTXV1N6157US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6157US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6157US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6157US/TR?
All JANTXV1N6157US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6157US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6157US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6157US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6157US/TR Tags

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Diodes Incorporated

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