Microchip Technology JANTXV1N6161AUS/TR
- Part No.:
- JANTXV1N6161AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6161AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTXV1N6161AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV reliability level. It provides 47.1 V working standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps transients to 85.3 V at 17.6 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in military avionics power rail protection.
For engineers reviewing the JANTXV1N6161AUS/TR datasheet, JANTXV1N6161AUS/TR pinout, JANTXV1N6161AUS/TR application, or JANTXV1N6161AUS/TR equivalent, key selection criteria include its 1500 W peak pulse power rating, -55°C to +175°C operating junction temperature range, Category 1 metallurgical bonds, RoHS-compliant tin/lead termination option, and SQ-MELF "C" package compatibility with automated SMT placement.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses hard-glass construction with tungsten slugs for thermal robustness. Its clamping behavior is defined by a 10/1000 µs double-exponential surge waveform, and it maintains stable V(BR) with a temperature coefficient of 0.100 %/°C.
The device achieves 1500 W peak pulse power (PPP) at 25°C and derates linearly above 150°C case temperature to zero at 175°C. Thermal resistance from junction to end cap (RθJEC) is 5.0 °C/W, enabling high-energy transient absorption without thermal runaway in constrained aerospace PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.1 V - maximum continuous reverse/forward voltage before conduction begins; sets safe operating margin below system rail voltage. |
| V(BR) min | 58.9 V @ 20 mA - guaranteed breakdown onset threshold; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 85.3 V @ 17.6 A - clamped voltage during 10/1000 µs surge; defines worst-case stress on downstream ICs. |
| PPP | 1500 W - peak impulse power handling capability; supports lightning-induced surge immunity per IEC61000-4-5 Level 3. |
| TJ Range | -55°C to +175°C - full military temperature operation; validated for engine bay and space-grade thermal cycling. |
| RθJEC | 5.0 °C/W - low thermal resistance to end cap; enables direct heat sinking to copper pour or chassis for sustained pulse duty. |
Pinout & Package
Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs); dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm); weight ≈ 1100 mg; terminals are tin/lead plated copper (RoHS matte-tin available for commercial grade only).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional terminal pair | No polarity marking - symmetric conduction in both directions; connects across protected line-to-line or line-to-ground. |
| End Cap | Thermal interface | Primary heat path to PCB copper or heatsink; requires soldered contact to thermal pad for RθJEC spec compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and bond degradation over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Ensures mechanical integrity under shock/vibration up to 100 g; required for MIL-PRF-19500/516 JANTXV qualification. |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass body; maintains ID ≤ 5 µA at VWM across extended temperature and humidity stress. |
| SQ-MELF geometry | Enables precise pick-and-place alignment and consistent solder joint formation in high-reliability automated assembly lines. |
Applications
| Aerospace Power Distribution | Military Vehicle ECUs |
|---|---|
Use Scenario: Protection of 28 V DC bus in satellite power management units against load dump and ESD coupling. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across bus rails to limit transient excursions to <85.3 V during 1500 W surges. Use Value: Prevents latch-up or gate oxide rupture in downstream DC-DC controllers rated for 100 V absolute max input. | Use Scenario: Input protection for CAN transceivers and microcontrollers in armored vehicle control modules exposed to ignition noise. IC Role / Device Role / Timing Role: Line-to-line TVS suppressing coupled transients from solenoid switching and alternator ripple. Use Value: Maintains signal integrity by clamping induced spikes within 10 ns response time while surviving >1000 surges per MIL-STD-1275E. |
| Naval Radar Front-Ends | High-Altitude UAV Sensors |
Use Scenario: Surge suppression on RF amplifier bias lines subjected to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing secondary lightning energy per IEC61000-4-5 Level 4 without parametric shift. Use Value: Guarantees VWM = 47.1 V remains stable after 5000 surge cycles - critical for maintaining RF gain stability. | Use Scenario: Protection of MEMS inertial measurement unit (IMU) supply inputs during rapid atmospheric discharge events. IC Role / Device Role / Timing Role: Low-leakage (ID ≤ 5 µA) bidirectional clamp preserving ultra-low quiescent current in battery-powered flight systems. Use Value: Enables 10-year shelf life and >50,000 hr MTBF by eliminating parametric drift due to humidity-induced leakage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6161US | Commercial-grade version; same electrical specs but not MIL-PRF-19500/516 qualified; no JANTXV reliability screening. | Lacks radiation hardness, thermal cycling validation, and long-term parametric stability data required for flight hardware. | Select only for non-mission-critical ground test equipment where cost outweighs lifetime reliability. |
| JANTXV1N6162AUS/TR | Higher VWM (51.7 V) and V(BR) (64.6 V); clamps at 97.1 V @ 15.4 A; identical package and qualification level. | Better suited for 36 V nominal systems; trades lower clamping headroom for higher standoff margin against normal-mode ripple. | Choose when protecting 36 V avionics buses where 47.1 V VWM risks false triggering during startup overshoot. |
Compared with JANTXV1N6161AUS/TR, the 1N6161US sacrifices military qualification for cost reduction, while JANTXV1N6162AUS/TR offers higher standoff for 36 V systems at the expense of 7% higher clamping voltage - requiring revalidation of downstream IC voltage margins.
Availability
JANTXV1N6161AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military vehicle ECUs, naval radar front-ends, and high-altitude UAV sensors requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N6161AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N6138AUS–1N6173AUS series was developed specifically to meet MIL-PRF-19500/516 requirements for voidless hermetic TVS devices in mission-critical platforms where failure is not an option.
FAQ
What is the maximum clamping voltage of JANTXV1N6161AUS/TR under a 10/1000 µs surge?
The JANTXV1N6161AUS/TR clamps to a maximum of 85.3 V when subjected to a 10/1000 µs surge waveform at its rated peak pulse current of 17.6 A. This value is measured per MIL-STD-750 Method 3019 and is guaranteed across the full -55°C to +175°C junction temperature range. The clamping voltage directly determines the peak stress imposed on protected circuitry, making it a critical parameter for downstream IC voltage rating validation.
Is JANTXV1N6161AUS/TR compatible with lead-free reflow processes?
JANTXV1N6161AUS/TR uses standard tin/lead termination and is rated for solder temperature up to 260°C for 10 seconds, matching SnPb reflow profiles. While RoHS-compliant matte-tin versions exist for commercial-grade parts (e.g., 1N6161AUS), the JANTXV1N6161AUS/TR variant is not qualified for lead-free reflow due to its MIL-PRF-19500/516 JANTXV screening requirements and legacy termination specification.
How does the temperature coefficient affect JANTXV1N6161AUS/TR's breakdown voltage in extreme environments?
JANTXV1N6161AUS/TR has a V(BR) temperature coefficient of +0.100 %/°C, meaning its breakdown voltage increases by approximately 0.059 V per °C rise above 25°C. At +125°C junction temperature, V(BR) rises to ~64.8 V - ensuring reliable turn-on margin above system rail voltage even in engine bay or avionics bay thermal extremes.
Can JANTXV1N6161AUS/TR be used in line-to-line configuration?
Yes, JANTXV1N6161AUS/TR is explicitly designed for bidirectional operation and is routinely applied line-to-line in MIL-STD-1275E and DO-160G compliant systems. Its symmetric IV curve and absence of polarity marking allow direct placement between any two conductors requiring transient isolation - including differential data lines, dual-rail supplies, and ungrounded AC inputs.
What is the steady-state power dissipation limit for JANTXV1N6161AUS/TR at 25°C ambient?
At TA = 25°C, JANTXV1N6161AUS/TR has a steady-state power dissipation limit of 3.0 W, as specified in the Maximum Ratings table. This rating assumes adequate PCB copper area for thermal conduction; derating follows the curve in Figure 4, dropping to zero at 150°C case temperature. For continuous operation, designers must ensure junction temperature stays ≤175°C using RθJEC = 5.0 °C/W and thermal interface design.
JANTXV1N6161AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 47.1V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6161AUS/TR FAQ
1.How can I place an order for JANTXV1N6161AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6161AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6161AUS/TR reliable?
The price and inventory of JANTXV1N6161AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6161AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6161AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6161AUS/TR transactions.
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4.How is shipping managed for JANTXV1N6161AUS/TR?
JANTXV1N6161AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6161AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6161AUS/TR?
For technical support, including JANTXV1N6161AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6161AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6161AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6161AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6161AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6161AUS/TR?
All JANTXV1N6161AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6161AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6161AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6161AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6161AUS/TR Tags

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Toshiba Semiconductor and Storage

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