Microchip Technology JANTXV1N6161US/TR
- Part No.:
- JANTXV1N6161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6161US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
JANTXV1N6161US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 47.1 V working peak standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps transients to 85.3 V at 17.6 A peak pulse current (IPP) for 10/1000 µs waveform. It delivers 1500 W peak pulse power and operates from –55 °C to +175 °C, used in military avionics power rail protection.
For engineers reviewing the JANTXV1N6161US/TR datasheet, JANTXV1N6161US/TR pinout, JANTXV1N6161US/TR application, or JANTXV1N6161US/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, 1500 W surge rating, VWM/V(BR)/VC tolerance stack-up, and SQ-MELF package thermal performance under high-reliability transient stress.
Technical Context
This device is a glass-passivated, hard-glass, bidirectional TVS diode with Category 1 internal metallurgical bonds and triple-layer passivation. Its voidless hermetic seal ensures long-term stability in harsh environments, and it exhibits no polarity marking due to symmetrical bidirectional conduction.
It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges). Thermal resistance junction-to-end cap is 5.0 °C/W, enabling robust power dissipation in surface-mount configurations without external heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.1 V - Maximum continuous DC or repetitive peak reverse voltage before clamping initiates; defines safe operating margin below breakdown. |
| V(BR) min | 58.9 V @ 20 mA - Minimum voltage at which device enters avalanche breakdown; sets lower bound for clamping onset threshold. |
| VC @ IPP | 85.3 V @ 17.6 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry. |
| PPP | 1500 W - Peak pulse power handling capability for standardized 10/1000 µs waveform; defines single-event surge energy limit. |
| ID @ VWM | 5 µA - Standby leakage current at rated standoff voltage; low value minimizes quiescent power loss and signal path loading. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; supports operation in extreme environmental conditions without derating. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal coupling to PCB copper or chassis for sustained power dissipation. |
Pinout & Package
Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; tin/lead-plated copper terminals; weight ≈1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Reversible current path | No polarity marking; either end functions identically as cathode or anode depending on transient polarity-enables symmetric placement on PCB without orientation constraints. |
| End Cap (both ends) | Thermal and electrical interface | Directly contacts PCB pads for simultaneous heat conduction and low-inductance current return; eliminates need for dedicated thermal vias or solder mask openings. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables protection of AC-coupled or floating signal/power lines without polarity-sensitive layout-reduces BOM count and routing complexity. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal cycling and mechanical shock per MIL-PRF-19500/516-critical for aerospace and defense mission-critical systems. |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year field life-eliminates failure modes associated with plastic-packaged TVS devices in humid or sealed enclosures. |
| Triple-layer passivation | Provides enhanced surface insulation and contamination resistance-maintains stable V(BR) and low ID across extended storage and operational lifetimes. |
| MIL-PRF-19500/516 qualification | Validates manufacturing process control, screening, and test rigor at JANTXV reliability level-required for DoD procurement and flight hardware acceptance. |
Applications
| Avionics Power Distribution | Tactical Radio Front-End Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in airborne communication systems against load dump, inductive switching spikes, and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed directly at connector entry point to shunt transient energy before reaching DC-DC converters and FPGAs. Use Value: Withstands 1500 W 10/1000 µs pulses while maintaining 47.1 V standoff-ensures uninterrupted operation of MIL-STD-1275-compliant avionics subsystems. |
Use Scenario: Shielding RF amplifier input stages in handheld radios from ESD events during field handling and antenna coupling transients. IC Role / Device Role / Timing Role: Fast-response TVS placed adjacent to SMA connector to suppress sub-100 ns ESD pulses per IEC61000-4-2 Level 4 (15 kV air). Use Value: Low 5 µA leakage and 85.3 V clamping at 17.6 A ensure minimal RF insertion loss and preservation of receiver sensitivity under repeated ESD stress. |
| Ground Vehicle Control Module | Satellite Power Conditioning Unit |
Use Scenario: Safeguarding CAN and LIN bus transceivers in engine control units exposed to ISO 7637-2 pulse 1, 2a, and 5a. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V supply rail feeding microcontroller and sensor interfaces. Use Value: JANTXV-level screening and –55 °C to +175 °C operation support reliable function across automotive under-hood thermal extremes without derating. |
Use Scenario: Protecting DC-DC converter inputs in LEO satellite power systems subjected to single-event transients and TID effects. IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary surges induced by particle strikes in solar array regulation circuits. Use Value: Inherent radiation hardness per MicroNote 050 and hermetic construction prevent parametric shift or catastrophic failure in total ionizing dose environments up to 100 krad(Si). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6161AUS | Commercial-grade version with same VWM (47.1 V), V(BR) (58.9 V), and VC (85.3 V), but not MIL-qualified; RoHS-compliant matte-tin plating available. | Lacks JANTXV screening, burn-in, and lot traceability; unsuitable for DoD or space programs requiring MIL-PRF-19500 compliance. | Select when cost sensitivity outweighs military reliability requirements and RoHS compliance is mandatory. |
| JANTXV1N6160US/TR | Lower VWM (42.6 V), V(BR) (53.2 V), and VC (77.0 V); same 1500 W PPP and SQ-MELF package; identical JANTXV qualification level. | Better suited for 36 V nominal systems where tighter clamping margin is required; slightly higher standby current (5 µA same). | Choose for 36 V rail protection where lower clamping voltage reduces stress on downstream 50 V-rated components. |
Compared with JANTXV1N6161US/TR, 1N6161AUS trades MIL qualification for RoHS compliance and lower cost, while JANTXV1N6160US/TR offers lower clamping voltage at reduced standoff-enabling finer voltage-margin design in 36 V systems without sacrificing surge rating or reliability grade.
Availability
JANTXV1N6161US/TR is available at Aetrix Electronics and suitable for avionics power distribution, tactical radio front-end protection, and ground vehicle control module designs requiring stable component supply, full traceability, and long-term obsolescence management.
Supply support for JANTXV1N6161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
JANTXV1N6161US/TR belongs to Microsemi's MIL-qualified TVS diode family designed specifically for mission-critical transient suppression in military, space, and high-temperature industrial environments where failure is not an option.
FAQ
What is the clamping voltage of JANTXV1N6161US/TR at its rated peak pulse current?
The JANTXV1N6161US/TR has a maximum clamping voltage (VC) of 85.3 V when subjected to its rated peak pulse current (IPP) of 17.6 A under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance remains stable across its full operating temperature range.
Is JANTXV1N6161US/TR suitable for RoHS-compliant designs?
No, JANTXV1N6161US/TR uses tin/lead terminal plating and is not RoHS compliant. Microsemi offers RoHS-compliant versions only in commercial-grade parts such as 1N6161AUS. The JANTXV variant maintains legacy plating to ensure compatibility with existing military assembly processes and solderability specifications under MIL-STD-202.
Does JANTXV1N6161US/TR require polarity-aware PCB layout?
No, JANTXV1N6161US/TR is a bidirectional TVS diode with symmetrical electrical characteristics-neither end is marked as anode or cathode. Its SQ-MELF package has identical end caps, allowing unrestricted orientation during automated placement. This eliminates polarity verification steps and reduces assembly errors in high-reliability production lines.
What is the thermal resistance specification for JANTXV1N6161US/TR?
JANTXV1N6161US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This parameter reflects direct conduction from the silicon die through the tungsten slug and glass body to the PCB pad contact surface. It enables accurate thermal modeling for steady-state and pulsed power dissipation without requiring additional thermal vias or heatsinks.
How does JANTXV1N6161US/TR differ from commercial 1N6161AUS in reliability testing?
JANTXV1N6161US/TR undergoes full MIL-PRF-19500/516 screening including extended burn-in, temperature cycling, hermeticity testing, and lot acceptance tests per JANTXV level. In contrast, 1N6161AUS receives only commercial-grade quality assurance with no military screening-making it unsuitable for applications requiring guaranteed lifetime performance under shock, vibration, or extreme thermal cycling.
JANTXV1N6161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 47.1V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 17.6A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6161US/TR FAQ
1.How can I place an order for JANTXV1N6161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6161US/TR reliable?
The price and inventory of JANTXV1N6161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6161US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6161US/TR transactions.
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4.How is shipping managed for JANTXV1N6161US/TR?
JANTXV1N6161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6161US/TR?
For technical support, including JANTXV1N6161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6161US/TR requirements.
6.How does Aetrix verify that JANTXV1N6161US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6161US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6161US/TR?
All JANTXV1N6161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6161US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6161US/TR Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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