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Microchip Technology JANTXV1N6161US/TR

Part No.:
JANTXV1N6161US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANTXV1N6161US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,785

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Product details

Overview

JANTXV1N6161US/TR from Microsemi is a voidless hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 47.1 V working peak standoff voltage (VWM), 58.9 V minimum breakdown voltage (V(BR)) at 20 mA, and clamps transients to 85.3 V at 17.6 A peak pulse current (IPP) for 10/1000 µs waveform. It delivers 1500 W peak pulse power and operates from –55 °C to +175 °C, used in military avionics power rail protection.

For engineers reviewing the JANTXV1N6161US/TR datasheet, JANTXV1N6161US/TR pinout, JANTXV1N6161US/TR application, or JANTXV1N6161US/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, 1500 W surge rating, VWM/V(BR)/VC tolerance stack-up, and SQ-MELF package thermal performance under high-reliability transient stress.

Technical Context

This device is a glass-passivated, hard-glass, bidirectional TVS diode with Category 1 internal metallurgical bonds and triple-layer passivation. Its voidless hermetic seal ensures long-term stability in harsh environments, and it exhibits no polarity marking due to symmetrical bidirectional conduction.

It meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges). Thermal resistance junction-to-end cap is 5.0 °C/W, enabling robust power dissipation in surface-mount configurations without external heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 47.1 V - Maximum continuous DC or repetitive peak reverse voltage before clamping initiates; defines safe operating margin below breakdown.
V(BR) min 58.9 V @ 20 mA - Minimum voltage at which device enters avalanche breakdown; sets lower bound for clamping onset threshold.
VC @ IPP 85.3 V @ 17.6 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry.
PPP 1500 W - Peak pulse power handling capability for standardized 10/1000 µs waveform; defines single-event surge energy limit.
ID @ VWM 5 µA - Standby leakage current at rated standoff voltage; low value minimizes quiescent power loss and signal path loading.
TJ Range –55 °C to +175 °C - Full military-grade junction temperature range; supports operation in extreme environmental conditions without derating.
RθJEC 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal coupling to PCB copper or chassis for sustained power dissipation.

Pinout & Package

Package: SQ-MELF (Square-End-Cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; tin/lead-plated copper terminals; weight ≈1100 mg.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Reversible current path No polarity marking; either end functions identically as cathode or anode depending on transient polarity-enables symmetric placement on PCB without orientation constraints.
End Cap (both ends) Thermal and electrical interface Directly contacts PCB pads for simultaneous heat conduction and low-inductance current return; eliminates need for dedicated thermal vias or solder mask openings.

Key Features

Feature Design Value
Bidirectional clamping Enables protection of AC-coupled or floating signal/power lines without polarity-sensitive layout-reduces BOM count and routing complexity.
Category 1 metallurgical bonds Guarantees bond integrity under thermal cycling and mechanical shock per MIL-PRF-19500/516-critical for aerospace and defense mission-critical systems.
Voidless hermetic seal Prevents moisture ingress and internal corrosion over 20+ year field life-eliminates failure modes associated with plastic-packaged TVS devices in humid or sealed enclosures.
Triple-layer passivation Provides enhanced surface insulation and contamination resistance-maintains stable V(BR) and low ID across extended storage and operational lifetimes.
MIL-PRF-19500/516 qualification Validates manufacturing process control, screening, and test rigor at JANTXV reliability level-required for DoD procurement and flight hardware acceptance.

Applications

Avionics Power Distribution Tactical Radio Front-End Protection

Use Scenario: Protecting 28 V DC bus inputs in airborne communication systems against load dump, inductive switching spikes, and lightning-induced surges.

IC Role / Device Role / Timing Role: Bidirectional TVS clamp placed directly at connector entry point to shunt transient energy before reaching DC-DC converters and FPGAs.

Use Value: Withstands 1500 W 10/1000 µs pulses while maintaining 47.1 V standoff-ensures uninterrupted operation of MIL-STD-1275-compliant avionics subsystems.

Use Scenario: Shielding RF amplifier input stages in handheld radios from ESD events during field handling and antenna coupling transients.

IC Role / Device Role / Timing Role: Fast-response TVS placed adjacent to SMA connector to suppress sub-100 ns ESD pulses per IEC61000-4-2 Level 4 (15 kV air).

Use Value: Low 5 µA leakage and 85.3 V clamping at 17.6 A ensure minimal RF insertion loss and preservation of receiver sensitivity under repeated ESD stress.

Ground Vehicle Control Module Satellite Power Conditioning Unit

Use Scenario: Safeguarding CAN and LIN bus transceivers in engine control units exposed to ISO 7637-2 pulse 1, 2a, and 5a.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V supply rail feeding microcontroller and sensor interfaces.

Use Value: JANTXV-level screening and –55 °C to +175 °C operation support reliable function across automotive under-hood thermal extremes without derating.

Use Scenario: Protecting DC-DC converter inputs in LEO satellite power systems subjected to single-event transients and TID effects.

IC Role / Device Role / Timing Role: Radiation-hardened TVS suppressing secondary surges induced by particle strikes in solar array regulation circuits.

Use Value: Inherent radiation hardness per MicroNote 050 and hermetic construction prevent parametric shift or catastrophic failure in total ionizing dose environments up to 100 krad(Si).

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional TVS applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6161AUS Commercial-grade version with same VWM (47.1 V), V(BR) (58.9 V), and VC (85.3 V), but not MIL-qualified; RoHS-compliant matte-tin plating available. Lacks JANTXV screening, burn-in, and lot traceability; unsuitable for DoD or space programs requiring MIL-PRF-19500 compliance. Select when cost sensitivity outweighs military reliability requirements and RoHS compliance is mandatory.
JANTXV1N6160US/TR Lower VWM (42.6 V), V(BR) (53.2 V), and VC (77.0 V); same 1500 W PPP and SQ-MELF package; identical JANTXV qualification level. Better suited for 36 V nominal systems where tighter clamping margin is required; slightly higher standby current (5 µA same). Choose for 36 V rail protection where lower clamping voltage reduces stress on downstream 50 V-rated components.

Compared with JANTXV1N6161US/TR, 1N6161AUS trades MIL qualification for RoHS compliance and lower cost, while JANTXV1N6160US/TR offers lower clamping voltage at reduced standoff-enabling finer voltage-margin design in 36 V systems without sacrificing surge rating or reliability grade.

Availability

JANTXV1N6161US/TR is available at Aetrix Electronics and suitable for avionics power distribution, tactical radio front-end protection, and ground vehicle control module designs requiring stable component supply, full traceability, and long-term obsolescence management.

Supply support for JANTXV1N6161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.

JANTXV1N6161US/TR belongs to Microsemi's MIL-qualified TVS diode family designed specifically for mission-critical transient suppression in military, space, and high-temperature industrial environments where failure is not an option.

FAQ

What is the clamping voltage of JANTXV1N6161US/TR at its rated peak pulse current?

The JANTXV1N6161US/TR has a maximum clamping voltage (VC) of 85.3 V when subjected to its rated peak pulse current (IPP) of 17.6 A under the standard 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The clamping performance remains stable across its full operating temperature range.

Is JANTXV1N6161US/TR suitable for RoHS-compliant designs?

No, JANTXV1N6161US/TR uses tin/lead terminal plating and is not RoHS compliant. Microsemi offers RoHS-compliant versions only in commercial-grade parts such as 1N6161AUS. The JANTXV variant maintains legacy plating to ensure compatibility with existing military assembly processes and solderability specifications under MIL-STD-202.

Does JANTXV1N6161US/TR require polarity-aware PCB layout?

No, JANTXV1N6161US/TR is a bidirectional TVS diode with symmetrical electrical characteristics-neither end is marked as anode or cathode. Its SQ-MELF package has identical end caps, allowing unrestricted orientation during automated placement. This eliminates polarity verification steps and reduces assembly errors in high-reliability production lines.

What is the thermal resistance specification for JANTXV1N6161US/TR?

JANTXV1N6161US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W. This parameter reflects direct conduction from the silicon die through the tungsten slug and glass body to the PCB pad contact surface. It enables accurate thermal modeling for steady-state and pulsed power dissipation without requiring additional thermal vias or heatsinks.

How does JANTXV1N6161US/TR differ from commercial 1N6161AUS in reliability testing?

JANTXV1N6161US/TR undergoes full MIL-PRF-19500/516 screening including extended burn-in, temperature cycling, hermeticity testing, and lot acceptance tests per JANTXV level. In contrast, 1N6161AUS receives only commercial-grade quality assurance with no military screening-making it unsuitable for applications requiring guaranteed lifetime performance under shock, vibration, or extreme thermal cycling.

JANTXV1N6161US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
47.1V
Voltage - Breakdown (Min):
58.9V
Voltage - Clamping (Max) @ Ipp:
85.3V
Current - Peak Pulse (10/1000µs):
17.6A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANTXV1N6161US/TR FAQ

1.How can I place an order for JANTXV1N6161US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6161US/TR reliable?

The price and inventory of JANTXV1N6161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6161US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N6161US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6161US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6161US/TR?

JANTXV1N6161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6161US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6161US/TR?

For technical support, including JANTXV1N6161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6161US/TR requirements.

6.How does Aetrix verify that JANTXV1N6161US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6161US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N6161US/TR?

All JANTXV1N6161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6161US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6161US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N6161US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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