Microchip Technology JANTXV1N6162US/TR
- Part No.:
- JANTXV1N6162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6162US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:9,124
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Product details
Overview
JANTXV1N6162US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 51.7 V working standoff voltage (VWM), and 97.1 V clamping voltage (VC) at 15.4 A peak pulse current. It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.
For engineers reviewing the JANTXV1N6162US/TR datasheet, JANTXV1N6162US/TR pinout, JANTXV1N6162US/TR application, or JANTXV1N6162US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This TVS employs hard-glass construction with internal Category 1 metallurgical bonds to ensure radiation hardness and long-term reliability under thermal cycling and mechanical stress. Its bidirectional architecture provides symmetrical clamping without polarity marking, enabling placement flexibility on unidirectional or AC-coupled lines.
The device delivers stable breakdown at 64.6 V (min) with ±5% tolerance (A-suffix), temperature coefficient of 0.100 %/°C, and low standby leakage (<5 µA at VWM). It sustains 1500 W transient energy while maintaining clamping integrity up to TJ = 175 °C via direct junction-to-end-cap thermal path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (10/1000 µs) | 1500 W - withstands high-energy transients without degradation in aerospace power bus protection |
| Working Standoff Voltage (VWM) | 51.7 V - maximum continuous DC or repetitive peak voltage before conduction begins |
| Clamping Voltage (VC @ IPP) | 97.1 V at 15.4 A - limits downstream voltage during surge to protect 100 V-rated components |
| Breakdown Voltage (VBR min) | 64.6 V @ 20 mA - ensures reliable turn-on above normal operating rail with margin |
| Junction Temperature Range | –55 °C to +175 °C - supports operation in extreme environments including engine bays and space-grade enclosures |
| Thermal Resistance (Junction-to-End Cap) | 5.0 °C/W - enables efficient heat transfer to PCB copper or heatsink through end-cap mounting |
| ESD & Surge Standards | IEC61000-4-2 (±15 kV air), IEC61000-4-4 (40 A), IEC61000-4-5 (select levels) - validated immunity for MIL-STD-461G-compliant systems |
Pinout & Package
Package: SQ-MELF (square-end-cap metalized glass body), hermetically sealed, voidless, weight ≈1100 mg. Terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional clamping node | Either end functions identically as transient current path; no orientation requirement during placement |
| End Cap (both ends) | Thermal and electrical interface | Primary heat dissipation path to PCB pad; also serves as low-inductance current return path |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments |
| Category 1 metallurgical bonds | Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-STD-883 Method 2011 |
| MIL-PRF-19500/516 JANTXV qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing for flight-critical systems |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass-metal interface under salt fog or atomic oxygen exposure |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si) per MicroNote 050, suitable for LEO missions |
Applications
| Avionics Power Distribution | Spacecraft Bus Protection |
|---|---|
Use Scenario: Protecting 28 V DC main bus against load dump and induced lightning surges in fighter jet subsystems. IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed directly across bus rails to limit transients to <100 V. Use Value: Prevents latch-up or burnout in downstream DC-DC converters rated for 100 V max input, verified per DO-160 Section 22. |
Use Scenario: Safeguarding solar array regulator inputs against electrostatic discharge during deployment in low Earth orbit. IC Role / Device Role / Timing Role: Primary transient suppressor at panel interface, absorbing >15 kV HBM ESD events without parameter shift. Use Value: Maintains clamping performance after 1000+ ESD strikes per MIL-STD-750 Method 1020, eliminating field replacement. |
| Tactical Radio Front-End | Nuclear Instrumentation Channel |
Use Scenario: Shielding RF amplifier bias lines from EMP coupling during electronic warfare operations. IC Role / Device Role / Timing Role: Fast-response TVS shunting transient energy before it reaches GaN PA bias circuitry. Use Value: Sub-1 ns response time and 5.0 °C/W thermal resistance prevent thermal runaway during repeated 500 A pulses. |
Use Scenario: Protecting gamma spectrometer analog front-end from cable-borne surges in reactor containment zones. IC Role / Device Role / Timing Role: High-reliability clamping element on signal conditioning inputs exposed to neutron-induced transients. Use Value: Radiation-hardened construction ensures no parametric drift after 10⁵ rad(Si) exposure, per ASTM E722. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6162AUS (commercial) | No MIL-PRF-19500/516 qualification; same VWM, VC, and PPP but lacks JANTXV screening | Suitable for ground-test equipment or non-flight prototypes where radiation hardness and extended temp range not required | Select only when full military screening and 175 °C operation are unnecessary |
| JANTXV1N6161US/TR | Lower VWM (47.1 V), lower VC (85.3 V), higher IPP (17.6 A); identical package and qualification level | Better suited for 24 V systems requiring tighter clamping margin below 100 V | Choose when system nominal voltage is ≤28 V and clamping headroom must be minimized |
Compared with JANTXV1N6162US/TR, the commercial 1N6162AUS omits military screening and high-temp validation, while JANTXV1N6161US/TR trades standoff voltage for enhanced clamping precision-making each optimal for distinct voltage-class and assurance-tier requirements.
Availability
JANTXV1N6162US/TR is available at Aetrix Electronics and suitable for avionics power distribution, spacecraft bus protection, tactical radio front-end hardening, and nuclear instrumentation channel safeguarding requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N6162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec qualified components.
The JANTXV1N6162US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for mission-critical transient suppression where failure is not an option-targeting MIL-STD-461, DO-160, and ECSS-Q-ST-60C compliance.
FAQ
What is the clamping voltage of JANTXV1N6162US/TR at its rated peak pulse current?
The JANTXV1N6162US/TR has a maximum clamping voltage (VC) of 97.1 V at 15.4 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and forms the basis for downstream component voltage rating selection in protected circuits. The JANTXV1N6162US/TR maintains this clamping performance without degradation after repeated surge events when mounted per recommended pad layout.
Is JANTXV1N6162US/TR suitable for bidirectional signal line protection?
Yes, JANTXV1N6162US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior regardless of voltage polarity, making it appropriate for AC-coupled interfaces, differential buses, or any application where transient direction cannot be predicted-such as antenna feedlines or isolated sensor outputs. The JANTXV1N6162US/TR does not require orientation verification during assembly.
Does JANTXV1N6162US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes, JANTXV1N6162US/TR is validated for protection against secondary effects of lightning per select levels of IEC61000-4-5, as stated in the official Microsemi documentation. Its 1500 W peak pulse power rating and low clamping voltage enable effective energy diversion for combination wave (1.2/50 µs voltage, 8/20 µs current) surges up to 6 kV open-circuit. The JANTXV1N6162US/TR achieves this while maintaining parameter stability after surge testing per test plan requirements.
What is the thermal resistance specification for JANTXV1N6162US/TR?
JANTXV1N6162US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured under standardized conditions. This low value reflects its hard-glass construction and tungsten slug design, enabling efficient heat transfer from the junction to the PCB pads. For sustained operation near maximum ambient temperatures, the JANTXV1N6162US/TR requires adequate copper area and optional adhesive bonding per the recommended pad layout to maintain junction temperature below 175 °C.
How does the JANTXV1N6162US/TR differ from the commercial 1N6162AUS variant?
JANTXV1N6162US/TR differs from 1N6162AUS in qualification level, screening, and temperature capability: it is fully qualified to MIL-PRF-19500/516 at JANTXV level-including extended temperature operation (–55 °C to +175 °C), radiation hardness, and rigorous lot acceptance testing. The 1N6162AUS is commercial-grade only, with narrower temperature range and no military screening. Both share identical electrical parameters and SQ-MELF packaging, but the JANTXV1N6162US/TR is the only version approved for flight hardware.
JANTXV1N6162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51.7V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 97.1V
- Current - Peak Pulse (10/1000µs):
- 15.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6162US/TR FAQ
1.How can I place an order for JANTXV1N6162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6162US/TR reliable?
The price and inventory of JANTXV1N6162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6162US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6162US/TR transactions.
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4.How is shipping managed for JANTXV1N6162US/TR?
JANTXV1N6162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6162US/TR?
For technical support, including JANTXV1N6162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6162US/TR requirements.
6.How does Aetrix verify that JANTXV1N6162US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6162US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6162US/TR?
All JANTXV1N6162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6162US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6162US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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