Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTXV1N6162US/TR

Part No.:
JANTXV1N6162US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANTXV1N6162US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,124

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTXV1N6162US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 1500 W peak pulse power (10/1000 µs), 51.7 V working standoff voltage (VWM), and 97.1 V clamping voltage (VC) at 15.4 A peak pulse current. It operates across –55 °C to +175 °C and is used in high-reliability avionics power rail protection.

For engineers reviewing the JANTXV1N6162US/TR datasheet, JANTXV1N6162US/TR pinout, JANTXV1N6162US/TR application, or JANTXV1N6162US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.

Technical Context

This TVS employs hard-glass construction with internal Category 1 metallurgical bonds to ensure radiation hardness and long-term reliability under thermal cycling and mechanical stress. Its bidirectional architecture provides symmetrical clamping without polarity marking, enabling placement flexibility on unidirectional or AC-coupled lines.

The device delivers stable breakdown at 64.6 V (min) with ±5% tolerance (A-suffix), temperature coefficient of 0.100 %/°C, and low standby leakage (<5 µA at VWM). It sustains 1500 W transient energy while maintaining clamping integrity up to TJ = 175 °C via direct junction-to-end-cap thermal path.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Pulse Power (10/1000 µs) 1500 W - withstands high-energy transients without degradation in aerospace power bus protection
Working Standoff Voltage (VWM) 51.7 V - maximum continuous DC or repetitive peak voltage before conduction begins
Clamping Voltage (VC @ IPP) 97.1 V at 15.4 A - limits downstream voltage during surge to protect 100 V-rated components
Breakdown Voltage (VBR min) 64.6 V @ 20 mA - ensures reliable turn-on above normal operating rail with margin
Junction Temperature Range –55 °C to +175 °C - supports operation in extreme environments including engine bays and space-grade enclosures
Thermal Resistance (Junction-to-End Cap) 5.0 °C/W - enables efficient heat transfer to PCB copper or heatsink through end-cap mounting
ESD & Surge Standards IEC61000-4-2 (±15 kV air), IEC61000-4-4 (40 A), IEC61000-4-5 (select levels) - validated immunity for MIL-STD-461G-compliant systems

Pinout & Package

Package: SQ-MELF (square-end-cap metalized glass body), hermetically sealed, voidless, weight ≈1100 mg. Terminals are tin/lead plated copper; no polarity marking due to bidirectional symmetry.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (symmetrical) Bidirectional clamping node Either end functions identically as transient current path; no orientation requirement during placement
End Cap (both ends) Thermal and electrical interface Primary heat dissipation path to PCB pad; also serves as low-inductance current return path

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination risk over 20+ year field life in humid or vacuum environments
Category 1 metallurgical bonds Guarantees bond integrity under shock, vibration, and thermal cycling per MIL-STD-883 Method 2011
MIL-PRF-19500/516 JANTXV qualification Validated screening includes burn-in, temperature cycling, and lot acceptance testing for flight-critical systems
Triple-layer passivation Prevents surface leakage and corrosion on glass-metal interface under salt fog or atomic oxygen exposure
Radiation hardness Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si) per MicroNote 050, suitable for LEO missions

Applications

Avionics Power Distribution Spacecraft Bus Protection

Use Scenario: Protecting 28 V DC main bus against load dump and induced lightning surges in fighter jet subsystems.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed directly across bus rails to limit transients to <100 V.

Use Value: Prevents latch-up or burnout in downstream DC-DC converters rated for 100 V max input, verified per DO-160 Section 22.

Use Scenario: Safeguarding solar array regulator inputs against electrostatic discharge during deployment in low Earth orbit.

IC Role / Device Role / Timing Role: Primary transient suppressor at panel interface, absorbing >15 kV HBM ESD events without parameter shift.

Use Value: Maintains clamping performance after 1000+ ESD strikes per MIL-STD-750 Method 1020, eliminating field replacement.

Tactical Radio Front-End Nuclear Instrumentation Channel

Use Scenario: Shielding RF amplifier bias lines from EMP coupling during electronic warfare operations.

IC Role / Device Role / Timing Role: Fast-response TVS shunting transient energy before it reaches GaN PA bias circuitry.

Use Value: Sub-1 ns response time and 5.0 °C/W thermal resistance prevent thermal runaway during repeated 500 A pulses.

Use Scenario: Protecting gamma spectrometer analog front-end from cable-borne surges in reactor containment zones.

IC Role / Device Role / Timing Role: High-reliability clamping element on signal conditioning inputs exposed to neutron-induced transients.

Use Value: Radiation-hardened construction ensures no parametric drift after 10⁵ rad(Si) exposure, per ASTM E722.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N6162AUS (commercial) No MIL-PRF-19500/516 qualification; same VWM, VC, and PPP but lacks JANTXV screening Suitable for ground-test equipment or non-flight prototypes where radiation hardness and extended temp range not required Select only when full military screening and 175 °C operation are unnecessary
JANTXV1N6161US/TR Lower VWM (47.1 V), lower VC (85.3 V), higher IPP (17.6 A); identical package and qualification level Better suited for 24 V systems requiring tighter clamping margin below 100 V Choose when system nominal voltage is ≤28 V and clamping headroom must be minimized

Compared with JANTXV1N6162US/TR, the commercial 1N6162AUS omits military screening and high-temp validation, while JANTXV1N6161US/TR trades standoff voltage for enhanced clamping precision-making each optimal for distinct voltage-class and assurance-tier requirements.

Availability

JANTXV1N6162US/TR is available at Aetrix Electronics and suitable for avionics power distribution, spacecraft bus protection, tactical radio front-end hardening, and nuclear instrumentation channel safeguarding requiring stable component supply across extended product lifecycles.

Supply support for JANTXV1N6162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and mil-spec qualified components.

The JANTXV1N6162US/TR belongs to Microsemi's legacy 1N61xxAUS TVS family, engineered specifically for mission-critical transient suppression where failure is not an option-targeting MIL-STD-461, DO-160, and ECSS-Q-ST-60C compliance.

FAQ

What is the clamping voltage of JANTXV1N6162US/TR at its rated peak pulse current?

The JANTXV1N6162US/TR has a maximum clamping voltage (VC) of 97.1 V at 15.4 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and forms the basis for downstream component voltage rating selection in protected circuits. The JANTXV1N6162US/TR maintains this clamping performance without degradation after repeated surge events when mounted per recommended pad layout.

Is JANTXV1N6162US/TR suitable for bidirectional signal line protection?

Yes, JANTXV1N6162US/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior regardless of voltage polarity, making it appropriate for AC-coupled interfaces, differential buses, or any application where transient direction cannot be predicted-such as antenna feedlines or isolated sensor outputs. The JANTXV1N6162US/TR does not require orientation verification during assembly.

Does JANTXV1N6162US/TR meet IEC61000-4-5 for lightning surge immunity?

Yes, JANTXV1N6162US/TR is validated for protection against secondary effects of lightning per select levels of IEC61000-4-5, as stated in the official Microsemi documentation. Its 1500 W peak pulse power rating and low clamping voltage enable effective energy diversion for combination wave (1.2/50 µs voltage, 8/20 µs current) surges up to 6 kV open-circuit. The JANTXV1N6162US/TR achieves this while maintaining parameter stability after surge testing per test plan requirements.

What is the thermal resistance specification for JANTXV1N6162US/TR?

JANTXV1N6162US/TR has a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W, measured under standardized conditions. This low value reflects its hard-glass construction and tungsten slug design, enabling efficient heat transfer from the junction to the PCB pads. For sustained operation near maximum ambient temperatures, the JANTXV1N6162US/TR requires adequate copper area and optional adhesive bonding per the recommended pad layout to maintain junction temperature below 175 °C.

How does the JANTXV1N6162US/TR differ from the commercial 1N6162AUS variant?

JANTXV1N6162US/TR differs from 1N6162AUS in qualification level, screening, and temperature capability: it is fully qualified to MIL-PRF-19500/516 at JANTXV level-including extended temperature operation (–55 °C to +175 °C), radiation hardness, and rigorous lot acceptance testing. The 1N6162AUS is commercial-grade only, with narrower temperature range and no military screening. Both share identical electrical parameters and SQ-MELF packaging, but the JANTXV1N6162US/TR is the only version approved for flight hardware.

JANTXV1N6162US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
51.7V
Voltage - Breakdown (Min):
64.6V
Voltage - Clamping (Max) @ Ipp:
97.1V
Current - Peak Pulse (10/1000µs):
15.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANTXV1N6162US/TR FAQ

1.How can I place an order for JANTXV1N6162US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6162US/TR reliable?

The price and inventory of JANTXV1N6162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6162US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N6162US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6162US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6162US/TR?

JANTXV1N6162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6162US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6162US/TR?

For technical support, including JANTXV1N6162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6162US/TR requirements.

6.How does Aetrix verify that JANTXV1N6162US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6162US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N6162US/TR?

All JANTXV1N6162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6162US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6162US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N6162US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTXV1N6162US/TR Tags

  • JANTXV1N6162US/TR
  • JANTXV1N6162US/TR PDF
  • JANTXV1N6162US/TR Datasheet
  • JANTXV1N6162US/TR Specifications
  • JANTXV1N6162US/TR Images
  • Microchip Technology
  • Microchip Technology JANTXV1N6162US/TR
  • Buy JANTXV1N6162US/TR
  • JANTXV1N6162US/TR Price
  • JANTXV1N6162US/TR Distributor
  • JANTXV1N6162US/TR Supplier
  • JANTXV1N6162US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER