Microchip Technology JANTXV1N6164AUS/TR

Overview

JANTXV1N6164AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 62.2 V working standoff voltage (VWM), 77.9 V minimum breakdown voltage (V(BR)) at 15 mA, and clamps transients to 112.8 V at 13.3 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in military avionics power rail protection.

For engineers reviewing the JANTXV1N6164AUS/TR datasheet, JANTXV1N6164AUS/TR pinout, JANTXV1N6164AUS/TR application, or JANTXV1N6164AUS/TR equivalent, key selection criteria include its 1500 W peak pulse power rating, -55°C to +175°C operating junction temperature range, Category 1 metallurgical bonds, RoHS-compliant tin/lead terminations (non-RoHS version), and SQ-MELF "C" package compatibility with EIA-481-B tape-and-reel delivery.

Technical Context

This TVS operates bidirectionally with no polarity marking and relies on avalanche breakdown for transient suppression. Its hard-glass construction incorporates tungsten slugs and triple-layer passivation to sustain repeated 10/1000 µs surges up to 1500 W without degradation.

It exhibits a 0.100 %/°C temperature coefficient of breakdown voltage (αV(BR)), enabling stable clamping across wide thermal excursions. The device is rated for 5.0 W off-state power at T_EC = 150°C with linear derating to zero at 175°C, and features 5.0 °C/W junction-to-end-cap thermal resistance (R_θJEC).

Key Specifications

Pinout & Package

Package: SQ-MELF "C" (hermetically sealed voidless hard glass with tungsten slugs; tin/lead plated copper terminals; weight ≈ 1100 mg). Dimensions per Microsemi T4-LDS-0278-1 Rev. 2: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with 1N6164US and JANTXV1N6163AUS/TR, the JANTXV1N6164AUS/TR uniquely balances 62.2 V standoff with 112.8 V clamping in a JANTXV-qualified SQ-MELF package - making it optimal for 28 V/70 V dual-rail aerospace platforms requiring both MIL-spec assurance and precise voltage coordination.

Availability

JANTXV1N6164AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radar signal chains, naval communication radios, and tactical vehicle data buses requiring stable component supply under extended lead times and strict obsolescence management.

Supply support for JANTXV1N6164AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.

The JANTXV1N6164AUS/TR belongs to Microsemi's legacy 1N61xxAUS series of hermetically sealed TVS diodes, engineered specifically for survivability in mission-critical military platforms where failure is not an option.

FAQ

What is the clamping voltage of JANTXV1N6164AUS/TR under a 10/1000 µs surge?

The JANTXV1N6164AUS/TR clamps to a maximum of 112.8 V when subjected to a 13.3 A peak pulse current with a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full -55°C to +175°C junction temperature range. The clamping performance is integral to the device's role in protecting downstream 70 V-rated power converters and FETs in aerospace systems.

Is JANTXV1N6164AUS/TR RoHS compliant?

No - the JANTXV1N6164AUS/TR uses standard tin/lead (SnPb) terminations and is not RoHS compliant. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6164AUS), which lack MIL-PRF-19500/516 qualification. The JANTXV1N6164AUS/TR maintains SnPb plating to ensure solder joint reliability under thermal cycling and mechanical shock per MIL-STD-750.

What does the "AUS" suffix mean in JANTXV1N6164AUS/TR?

The "AUS" suffix denotes the SQ-MELF surface-mount package ("US") with "A"-grade voltage tolerance (±5% on V(BR), ±5% on VC, and ±5% on IPP), and "JANTXV" reliability level. It distinguishes this variant from axial-leaded "C"-package versions (e.g., JANTXV1N6164A) and non-A versions with looser tolerances. The "TR" indicates tape-and-reel packaging per EIA-481-B.

Can JANTXV1N6164AUS/TR replace JANTXV1N6163AUS/TR in a design?

JANTXV1N6164AUS/TR is not a direct replacement for JANTXV1N6163AUS/TR due to differing electrical parameters: VWM increases from 56.0 V to 62.2 V, VC rises from 103.1 V to 112.8 V, and IPP decreases from 14.5 A to 13.3 A. System-level validation is required to confirm that the higher clamping voltage remains within safe margins for protected ICs and that the reduced surge current capacity meets worst-case lightning test requirements.

What is the thermal resistance specification for JANTXV1N6164AUS/TR?

The JANTXV1N6164AUS/TR has a junction-to-end-cap thermal resistance (R_θJEC) of 5.0 °C/W, measured per MIL-STD-750 Method 1022. This parameter defines the temperature rise at the semiconductor junction per watt of power dissipated through the end caps into the PCB pads. It is essential for calculating steady-state power derating and verifying thermal survival during repetitive surge events.