Microchip Technology JANTXV1N6165AUS/TR
- Part No.:
- JANTXV1N6165AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6165AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

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Product details
Overview
JANTXV1N6165AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 69.2 V working standoff voltage (VWM), 86.5 V minimum breakdown voltage (V(BR)) at 15 mA, and clamps to 125.1 V at 12.0 A peak pulse current (IPP) for 10/1000 µs waveform - delivering 1500 W peak pulse power in high-reliability military and aerospace power rail protection.
For engineers reviewing the JANTXV1N6165AUS/TR datasheet, JANTXV1N6165AUS/TR pinout, JANTXV1N6165AUS/TR application, or JANTXV1N6165AUS/TR equivalent, key selection criteria include its MIL-qualified reliability, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), RoHS-compliant tin-lead termination option, and compatibility with EIA-481-B tape-and-reel packaging for automated SMT assembly.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds for enhanced bond integrity under thermal cycling and mechanical stress. Its hard-glass construction ensures voidless hermetic sealing, enabling operation across –55 °C to +175 °C junction temperature range while maintaining stable V(BR) with 0.100 %/°C temperature coefficient.
The device delivers 1500 W peak pulse power (PPP) for 10/1000 µs waveform and supports steady-state off-state power dissipation up to 3.0 W at 25 °C ambient or 5.0 W at end-cap temperature ≤150 °C. Its clamping performance is specified at IPP = 12.0 A, with VC = 125.1 V, ensuring predictable overvoltage limiting during lightning-induced surges per IEC61000-4-5 Level 3–4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 69.2 V - maximum continuous reverse/forward voltage before conduction begins; sets operating margin for 72 V nominal systems. |
| V(BR) min | 86.5 V @ 15 mA - guaranteed breakdown onset; defines threshold for transient clamping activation. |
| VC @ IPP | 125.1 V @ 12.0 A - clamped voltage during 10/1000 µs surge; determines protected circuit's maximum transient exposure. |
| PPP | 1500 W - peak impulse power handling; enables robust protection against IEC61000-4-5 secondary lightning effects. |
| ID @ VWM | 5 µA - leakage current at rated standoff; ensures minimal standby power loss in low-power avionics rails. |
| TJ Range | –55 °C to +175 °C - extended operational envelope supporting engine bay, radar, and space-grade thermal environments. |
| RθJEC | 5.0 °C/W - junction-to-end-cap thermal resistance; enables direct thermal path design into copper pads or heat-spreading planes. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm). Weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Non-polarized terminal pair | No marking required; either end functions identically as input/output for symmetric surge suppression on AC or DC lines. |
| End Cap (both ends) | Thermal and electrical interface | Direct solderable surface for thermal conduction and low-inductance mounting; requires full-pad coverage per MIL-STD-2000A. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating DC signal/power lines without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under 1000+ thermal cycles (–55 °C/+125 °C), critical for mission-critical flight control electronics. |
| Voidless hermetic seal | Eliminates moisture ingress and internal corrosion risk over 20+ year service life in humid or salt-laden environments. |
| MIL-PRF-19500/516 JANTXV qualification | Validated screening includes burn-in, temperature cycling, and surge life testing - required for DoD procurement. |
| Triple-layer passivation | Prevents surface leakage and electrochemical migration under high-humidity bias conditions (85 °C/85% RH). |
Applications
| Aerospace Power Distribution | Military Avionics Data Buses |
|---|---|
Use Scenario: Protection of 28 V DC primary bus in UAV flight control modules exposed to load dump and EMP transients. IC Role / Device Role / Timing Role: Bidirectional TVS placed directly across bus rails to clamp surges within 1 ns response time and limit voltage to <126 V. Use Value: Prevents latch-up or destruction of downstream DC-DC converters and FPGAs by limiting energy let-through to <1.5 J per event. |
Use Scenario: Surge suppression on MIL-STD-1553B data bus stubs in airborne mission computers. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp on differential pairs to suppress EFT bursts without distorting Manchester-encoded signals. Use Value: Maintains signal integrity up to 1 Mbps while meeting IEC61000-4-4 Level 4 (4 kV) immunity requirements. |
| Satellite Power Conditioning | Naval Radar Front-End Protection |
Use Scenario: Input-stage protection of GaN-based DC-DC converters in LEO satellite power management units. IC Role / Device Role / Timing Role: Primary overvoltage limiter on 50 V intermediate bus, absorbing solar array arc-induced transients. Use Value: Radiation-hardened structure withstands >100 krad(Si) TID without parameter shift; clamping stability verified per MicroNote 050. |
Use Scenario: Secondary surge protection on 115 VAC radar transmitter control lines subject to lightning-induced ground potential rise. IC Role / Device Role / Timing Role: Back-to-back TVS configuration across phase-neutral to suppress common-mode surges per IEC61000-4-5 Level 4 (4 kV). Use Value: Withstands repeated 1500 W surges without degradation; validated for >1000 surge events at 80% PPP rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6165US | Commercial-grade version; same VWM/V(BR)/VC but not MIL-qualified; no JANTXV screening or Category 1 bond validation. | Limited to non-safety-critical ground-based industrial systems where radiation hardness and extended temperature cycling are not required. | Select only when cost sensitivity outweighs long-term reliability and qualification traceability needs. |
| JANTXV1N6164AUS/TR | Lower VWM (62.2 V), lower VC (112.8 V), higher IPP (13.3 A); otherwise identical package, qualification, and construction. | Better suited for 60 V nominal systems requiring tighter clamping margin; trades standoff headroom for lower let-through voltage. | Choose when protecting 60 V battery-fed subsystems where clamping voltage must stay below 115 V. |
Compared with JANTXV1N6165AUS/TR, the commercial 1N6165US lacks military screening and radiation tolerance, while JANTXV1N6164AUS/TR offers improved clamping at lower standoff - making the original optimal for 72 V systems needing both margin and proven survivability in harsh deployed environments.
Availability
JANTXV1N6165AUS/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military avionics data buses, and satellite power conditioning requiring stable component supply, full traceability, and long-term obsolescence mitigation.
Supply support for JANTXV1N6165AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-qualified components.
The JANTXV1N6165AUS/TR belongs to Microsemi's legacy TVS family engineered specifically for military-grade transient suppression - emphasizing hermeticity, bond integrity, and performance stability across extreme thermal and radiation environments.
FAQ
What does the "AUS" suffix mean in JANTXV1N6165AUS/TR?
The "AUS" suffix in JANTXV1N6165AUS/TR indicates a surface-mount SQ-MELF ("C") package with standard voltage tolerance (±5% on V(BR)), triple-layer passivation, and voidless hermetic glass construction. It distinguishes this variant from axial-leaded versions (e.g., 1N6165) and non-A variants with looser tolerances. The "TR" denotes tape-and-reel packaging per EIA-481-B.
Is JANTXV1N6165AUS/TR compatible with lead-free reflow processes?
JANTXV1N6165AUS/TR is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard SnPb and lead-free reflow profiles. However, its tin/lead-plated terminals are not RoHS-compliant; RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6165AUS), not JANTXV-level parts.
How does JANTXV1N6165AUS/TR perform under radiation exposure?
JANTXV1N6165AUS/TR is inherently radiation-hardened per Microsemi MicroNote 050, with no parameter shift observed up to 100 krad(Si) total ionizing dose. Its hard-glass package and Category 1 metallurgical bonds prevent displacement damage and maintain clamping consistency in LEO and MEO satellite orbits.
What is the thermal derating behavior of JANTXV1N6165AUS/TR above 25 °C ambient?
JANTXV1N6165AUS/TR has a steady-state power derating curve starting at 3.0 W at 25 °C ambient, linearly decreasing to zero at 150 °C ambient (per Figure 5). For pulsed operation, peak pulse power remains 1500 W up to 175 °C junction temperature, with derating governed by RθJEC = 5.0 °C/W and end-cap temperature limits.
Can JANTXV1N6165AUS/TR be used in AC line protection applications?
Yes - JANTXV1N6165AUS/TR is bidirectional and unmarked for polarity, making it suitable for AC line protection such as 115 VAC radar control circuits. Its 69.2 V VWM allows use with peak AC voltages up to ~98 V, and its 125.1 V clamping voltage ensures safe margin below typical 150 V insulation ratings.
JANTXV1N6165AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6165AUS/TR FAQ
1.How can I place an order for JANTXV1N6165AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6165AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6165AUS/TR reliable?
The price and inventory of JANTXV1N6165AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6165AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6165AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6165AUS/TR transactions.
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4.How is shipping managed for JANTXV1N6165AUS/TR?
JANTXV1N6165AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6165AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6165AUS/TR?
For technical support, including JANTXV1N6165AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6165AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6165AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6165AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6165AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6165AUS/TR?
All JANTXV1N6165AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6165AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6165AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6165AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6165AUS/TR Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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