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Microchip Technology JANTXV1N6165US/TR
- Part No.:
- JANTXV1N6165US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6165US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,458
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Product details
Overview
JANTXV1N6165US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 69.2 V working peak standoff voltage (VWM), 86.5 V minimum breakdown voltage (V(BR)) at 15 mA, and clamps transients to 125.1 V at 12.0 A peak pulse current (IPP) for 10/1000 µs waveform, delivering 1500 W peak pulse power in high-reliability military and aerospace power rail protection.
For engineers reviewing the JANTXV1N6165US/TR datasheet, JANTXV1N6165US/TR pinout, JANTXV1N6165US/TR application, or JANTXV1N6165US/TR equivalent, key selection criteria include its MIL-qualified reliability level, bidirectional clamping behavior, glass-body thermal resistance (5.0 °C/W), RoHS-compliant tin/lead termination option, and compatibility with EIA-481-B tape-and-reel packaging for automated SMT assembly.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass hermetic package to ensure radiation hardness and immunity to MIL-STD-750 Method 1020 ESD. Its 0.100 %/°C temperature coefficient of V(BR) enables stable clamping across –55 °C to +175 °C junction temperature range.
The device delivers 1500 W peak pulse power under 10/1000 µs waveform while maintaining ≤5 µA standby current at VWM and supports impulse repetition rates up to 0.01 %. Thermal resistance from junction to end cap is 5.0 °C/W, enabling robust power dissipation in constrained board layouts without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 69.2 V - Maximum continuous reverse/forward voltage before conduction begins; defines safe operating margin for 72 V nominal systems. |
| V(BR) min | 86.5 V @ 15 mA - Minimum voltage at which device enters avalanche breakdown; ensures predictable turn-on threshold under surge conditions. |
| VC @ IPP | 125.1 V @ 12.0 A - Clamping voltage during 10/1000 µs transient; limits downstream circuit stress to sub-126 V during 1500 W surge events. |
| PPP | 1500 W - Peak pulse power rating; supports lightning-induced surges per IEC61000-4-5 Level 3/4 and EFT per IEC61000-4-4. |
| TJ Range | –55 °C to +175 °C - Full military-grade junction temperature range; validated for operation in avionics, satellite power interfaces, and ground vehicle electronics. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; enables direct thermal coupling to heatsink or copper pour without thermal interface material. |
| αV(BR) | 0.100 %/°C - Temperature coefficient of breakdown voltage; ensures <±1.5 V drift over full operating range, critical for precision clamping. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style) with tungsten slugs and tin/lead-plated copper terminals. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm), ECT = 0.019–0.028 in (0.48–0.71 mm). Weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Common terminal pair | No polarity marking; symmetric conduction in both directions; either end serves as anode or cathode depending on transient polarity. |
| End Cap (both ends) | Thermal & electrical interface | Directly bonded to PCB copper pads; primary heat path and current return path; requires compliant pad layout per ASME Y14.5M Φ dimensions. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in vacuum or humid environments. |
| Category 1 metallurgical bonds | Guarantees bond integrity under mechanical shock (≥1000 g), thermal cycling (–55/+175 °C), and radiation exposure per MicroNote 050. |
| MIL-PRF-19500/516 JANTXV qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military specification-no derating required for Class H applications. |
| Bidirectional clamping | Protects AC-coupled or floating rails without external polarity management; simplifies layout in differential signal lines and unregulated DC buses. |
| Triple-layer passivation | Prevents surface leakage and contamination-induced parametric shift in high-humidity or salt-fog environments (e.g., naval platforms). |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 28 V DC aircraft bus against load dump and lightning-induced transients per DO-160 Section 22. IC Role / Device Role / Timing Role: Primary bidirectional clamping element placed directly at bus entry point before DC-DC converters. Use Value: Limits transient voltage to ≤125.1 V during 1500 W surges, preserving downstream FPGAs and ADCs rated for 130 V absolute maximum. |
Use Scenario: Shielding analog sensor inputs (e.g., RTD, thermocouple) in flight control units from ESD and coupled noise. IC Role / Device Role / Timing Role: Low-leakage (≤5 µA at 69.2 V) shunt protector located at connector interface before instrumentation amplifier. Use Value: Maintains signal integrity by clamping fast transients (<1 ns rise time) without adding capacitance or loading the high-impedance sensor path. |
| Tactical Vehicle Electronics | Satellite Power Conditioning |
Use Scenario: Guarding 24 V engine control module inputs against ISO 7637-2 pulse 5a (load dump) and alternator ripple spikes. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted on front-end PCB with direct thermal tie to chassis ground plane. Use Value: Withstands 175 °C junction temperature and 5.0 °C/W RθJEC, enabling operation in under-hood enclosures without active cooling. |
Use Scenario: Safeguarding solar array regulator inputs against single-event transients (SET) and secondary lightning effects in LEO orbit. IC Role / Device Role / Timing Role: Radiation-hardened clamping device qualified per MIL-PRF-19500/516 JANTXV level with documented TID tolerance. Use Value: Inherent radiation hardness eliminates need for shielding mass; 0.100 %/°C αV(BR) ensures stable clamping across orbital thermal cycles (–80/+120 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6165US/TR | Commercial-grade version; same VWM (69.2 V), V(BR) (86.5 V), and VC (125.1 V), but not MIL-qualified; no JANTXV screening or temperature cycling validation. | Limited to non-safety-critical industrial or test equipment where full MIL-PRF-19500/516 compliance is not mandated. | Select when cost sensitivity outweighs long-term reliability requirements and environmental stress validation is unnecessary. |
| JANTXV1N6164US/TR | Lower VWM (62.2 V), lower V(BR) (77.9 V), and higher IPP (13.3 A); clamps at 112.8 V-12.3 V lower than JANTXV1N6165US/TR. | Better suited for 56 V nominal systems (e.g., telecom -48 V DC) requiring tighter clamping margin below 115 V. | Choose when system operating voltage is ≤60 V and lower clamping voltage is prioritized over higher standoff headroom. |
Compared with JANTXV1N6165US/TR, the commercial 1N6165US/TR sacrifices military screening for cost reduction, while JANTXV1N6164US/TR trades 7 V higher VWM for 12.3 V lower clamping-enabling tighter protection margins in lower-voltage rails without changing footprint or thermal design.
Availability
JANTXV1N6165US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, and tactical vehicle electronics requiring stable component supply with full traceability and long-term obsolescence management.
Supply support for JANTXV1N6165US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and military qualification.
JANTXV1N6165US/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for mission-critical transient suppression in environments where failure is unacceptable-such as flight control, satellite power, and nuclear instrumentation.
FAQ
What is the maximum clamping voltage of JANTXV1N6165US/TR under a 10/1000 µs surge?
The JANTXV1N6165US/TR clamps to a maximum of 125.1 V when subjected to a 12.0 A peak pulse current (IPP) under the standard 10/1000 µs waveform. This value is measured and guaranteed per the manufacturer's electrical characteristics table and forms the basis for downstream circuit voltage margining in designs using JANTXV1N6165US/TR.
Is JANTXV1N6165US/TR compatible with lead-free reflow processes?
JANTXV1N6165US/TR is rated for solder temperature up to 260 °C for 10 seconds, making it compatible with standard SnPb and lead-free reflow profiles including IPC/JEDEC J-STD-020. Its hermetic glass body and tungsten slug construction prevent cracking or delamination during thermal cycling typical of Pb-free assembly.
Does JANTXV1N6165US/TR require polarity-aware PCB layout?
No-JANTXV1N6165US/TR is a bidirectional TVS with no polarity marking. Its symmetrical structure allows either end to serve as anode or cathode, eliminating orientation constraints during placement and simplifying layout for AC-coupled or floating-rail applications where JANTXV1N6165US/TR is deployed.
How does the temperature coefficient affect JANTXV1N6165US/TR performance across its operating range?
JANTXV1N6165US/TR has a V(BR) temperature coefficient of 0.100 %/°C. Over its full –55 °C to +175 °C junction range, this results in approximately ±1.3 V drift in breakdown voltage-well within the 69.2 V to 86.5 V design window-ensuring reliable clamping behavior without recalibration in JANTXV1N6165US/TR-based systems.
Can JANTXV1N6165US/TR be used in space-grade applications?
Yes-JANTXV1N6165US/TR is inherently radiation-hardened per Microsemi MicroNote 050 and qualified to MIL-PRF-19500/516 JANTXV level, including screening for total ionizing dose (TID) and single-event effects. Its hermetic glass package and Category 1 bonds make JANTXV1N6165US/TR suitable for LEO and GEO satellite power conditioning subsystems.
JANTXV1N6165US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 69.2V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125.1V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6165US/TR FAQ
1.How can I place an order for JANTXV1N6165US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6165US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6165US/TR reliable?
The price and inventory of JANTXV1N6165US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6165US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6165US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6165US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6165US/TR?
JANTXV1N6165US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6165US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6165US/TR?
For technical support, including JANTXV1N6165US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6165US/TR requirements.
6.How does Aetrix verify that JANTXV1N6165US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6165US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6165US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6165US/TR?
All JANTXV1N6165US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6165US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6165US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6165US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6165US/TR Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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