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Microchip Technology JANTXV1N6168AUS/TR
- Part No.:
- JANTXV1N6168AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6168AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,730
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Product details
Overview
JANTXV1N6168AUS/TR from Microsemi is a military-qualified, voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) designed for high-reliability circuit protection. It features a 91.2 V working standoff voltage (VWM), 114.0 V minimum breakdown voltage (V(BR)) at 10 mA, 165.1 V clamping voltage (VC) at 9.1 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It is used in avionics power bus conditioning and radiation-hardened satellite interface circuits.
For engineers reviewing the JANTXV1N6168AUS/TR datasheet, JANTXV1N6168AUS/TR pinout, JANTXV1N6168AUS/TR application, or JANTXV1N6168AUS/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, Category 1 metallurgical bonds, -55°C to +175°C operating junction temperature, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This TVS operates bidirectionally with no polarity marking and relies on hard-glass construction with tungsten slugs for thermal stability and mechanical robustness. Its triple-layer passivation and internal Category 1 metallurgical bonds ensure long-term reliability under thermal cycling and radiation exposure per MicroNote 050.
The device delivers 1500 W peak pulse power for 10/1000 µs transients while maintaining a low thermal resistance of 5.0 °C/W (junction-to-end cap). Standby current is limited to ≤5 µA at 91.2 V, and it exhibits a temperature coefficient of breakdown voltage (αV(BR)) of 0.100 %/°C - critical for precision overtemperature operation in aerospace systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 91.2 V - Maximum continuous reverse standoff voltage before conduction begins; defines maximum system operating voltage it can protect without leakage. |
| V(BR) min | 114.0 V @ 10 mA - Minimum voltage at which device enters controlled avalanche; ensures predictable turn-on margin above VWM. |
| VC @ IPP | 165.1 V @ 9.1 A - Clamping voltage during 10/1000 µs transient; determines maximum stress imposed on downstream ICs. |
| PPP | 1500 W - Peak pulse power handling capability; enables protection against high-energy surges like lightning-induced coupling. |
| TJ Range | -55°C to +175°C - Full military-grade junction temperature range; supports operation in extreme environments without derating loss. |
| RθJEC | 5.0 °C/W - Junction-to-end-cap thermal resistance; allows direct thermal path design into PCB copper or heatsink for sustained pulse duty. |
| αV(BR) | 0.100 %/°C - Temperature coefficient of breakdown voltage; enables accurate overtemperature clamping prediction in flight control systems. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass "C" package (SQ-MELF style), surface-mount, square-end-cap terminals, ~1100 mg weight. Dimensions: BD = 0.183–0.202 in (4.65–5.13 mm), BL = 0.205–0.245 in (5.21–6.22 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Reversible current path | No polarity marking required; symmetric conduction in either direction enables single-device protection of AC or differential lines. |
| End Cap (both ends) | Thermal and electrical terminal | Directly bonded tungsten slug provides low-inductance current path and primary heat dissipation route to PCB pads. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional TVS architecture | Enables single-device protection of AC-coupled, differential, or floating signal/power rails without polarity concerns. |
| Category 1 metallurgical bonds | Guarantees bond integrity under thermal shock and vibration per MIL-STD-750, critical for launch and orbital deployment. |
| Triple-layer passivation | Prevents moisture ingress and surface leakage in high-humidity or vacuum-outgassing environments typical in space payloads. |
| JANTXV qualification | Fully screened to MIL-PRF-19500/516 Level JANTXV - includes burn-in, life test, and lot acceptance testing for mission-critical use. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050; validated for total ionizing dose (TID) >100 krad(Si) without parameter shift. |
Applications
| Aerospace Power Bus Protection | Satellite Command & Data Handling Interface |
|---|---|
Use Scenario: Protecting 28 V DC power distribution buses in LEO satellites from load dump and switching transients. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit voltage excursions during fault events. Use Value: Withstands 1500 W surges and maintains <5 µA leakage at 91.2 V, ensuring minimal parasitic drain on battery-limited platforms. |
Use Scenario: Shielding RS-422/RS-485 command links between onboard computers and payload controllers. IC Role / Device Role / Timing Role: Line-level transient suppressor on differential pairs, placed adjacent to connector entry points. Use Value: 165.1 V clamping at 9.1 A ensures downstream UART transceivers remain within absolute maximum ratings during ESD events per IEC61000-4-2 Level 4. |
| Avionics Sensor Signal Conditioning | Military Radar RF Front-End Bias Lines |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in fly-by-wire control units. IC Role / Device Role / Timing Role: Low-leakage standoff protector on 0–5 V ratiometric sensor outputs exposed to harness-induced transients. Use Value: 91.2 V VWM exceeds system rail margins while 0.100 %/°C αV(BR) enables stable clamping across -55°C to +125°C operational range. |
Use Scenario: Protecting bias supply lines feeding GaN MMICs in airborne radar T/R modules. IC Role / Device Role / Timing Role: High-energy transient clamp on +10 V/+28 V bias rails susceptible to antenna-coupled lightning energy. Use Value: Voidless hermetic seal prevents outgassing in vacuum-cooled radar enclosures; 175°C max TJ supports proximity to high-power RF stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6168US/TR | Commercial-grade version; lacks JANTXV screening, no MIL-PRF-19500/516 qualification, higher VC tolerance (±5% vs. tighter JANTXV limits). | Approved only for non-mission-critical ground test equipment or commercial subsystems; not rated for flight hardware. | Select when cost sensitivity outweighs radiation tolerance and extended temperature validation requirements. |
| JANTXV1N6167AUS/TR | Lower VWM (86.6 V), lower VC (151.3 V @ 9.9 A); otherwise identical construction, qualification, and packaging. | Better suited for 24–48 V intermediate bus protection where tighter clamping headroom is needed. | Choose when system nominal voltage is ≤80 V and lower clamping voltage is prioritized over maximum standoff margin. |
Compared with JANTXV1N6168AUS/TR, the commercial 1N6168US/TR omits military screening and radiation assurance, while JANTXV1N6167AUS/TR trades 4.6 V VWM margin for 13.8 V lower clamping - enabling safer protection of 75 V-rated FETs but reducing headroom for 100 V transients.
Availability
JANTXV1N6168AUS/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, satellite command interface hardening, and avionics sensor signal conditioning requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for JANTXV1N6168AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and mixed-signal components.
JANTXV1N6168AUS/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for survivability in aerospace, defense, and nuclear instrumentation systems where failure is not an option.
FAQ
What is the clamping voltage of JANTXV1N6168AUS/TR at its rated peak pulse current?
The JANTXV1N6168AUS/TR has a maximum clamping voltage (VC) of 165.1 V when subjected to its rated peak pulse current (IPP) of 9.1 A under the standard 10/1000 µs waveform. This value is guaranteed per the manufacturer's electrical characteristics table and reflects worst-case device behavior after full MIL-PRF-19500/516 screening.
Is JANTXV1N6168AUS/TR RoHS compliant?
No, JANTXV1N6168AUS/TR is not RoHS compliant. Per the nomenclature and features section, RoHS-compliant matte-tin terminations are available only on commercial-grade versions (e.g., 1N6168AUS/TR without JANTXV prefix). The JANTXV variant uses traditional tin/lead plating to meet MIL-STD-750 solderability and reliability requirements.
Does JANTXV1N6168AUS/TR require polarity-aware PCB layout?
No, JANTXV1N6168AUS/TR is a bidirectional TVS with no polarity marking and symmetric electrical characteristics. Its SQ-MELF "C" package has identical end-cap terminals, allowing orientation-agnostic placement on PCBs - simplifying layout and eliminating risk of reverse installation in high-density avionics assemblies.
What is the thermal resistance from junction to end cap for JANTXV1N6168AUS/TR?
The thermal resistance from junction to end cap (RθJEC) for JANTXV1N6168AUS/TR is 5.0 °C/W, as specified in the Maximum Ratings table. This low value enables efficient heat transfer directly from the silicon die through the tungsten slugs into the PCB copper pads, supporting repeated 1500 W pulse handling without thermal runaway.
How does JANTXV1N6168AUS/TR differ from the non-A suffix version (e.g., JANTXV1N6168US/TR)?
JANTXV1N6168AUS/TR features tighter electrical tolerances: its minimum breakdown voltage (V(BR)) is 5% higher, clamping voltage (VC) is 5% lower, and peak pulse current (IPP) is 5% higher than the non-A version. These improvements result from enhanced process control and screening - critical for applications demanding precise clamping predictability in safety-critical systems.
JANTXV1N6168AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 91.2V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165.1V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6168AUS/TR FAQ
1.How can I place an order for JANTXV1N6168AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6168AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6168AUS/TR reliable?
The price and inventory of JANTXV1N6168AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6168AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6168AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6168AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6168AUS/TR?
JANTXV1N6168AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6168AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6168AUS/TR?
For technical support, including JANTXV1N6168AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6168AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6168AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6168AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6168AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6168AUS/TR?
All JANTXV1N6168AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6168AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6168AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6168AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6168AUS/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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