Microchip Technology JANTXV1N6168US/TR
- Part No.:
- JANTXV1N6168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6168US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:5,048
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Product details
Overview
JANTXV1N6168US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 91.2 V working peak standoff voltage (VWM), 114.0 V minimum breakdown voltage (V(BR)) at 10 mA, and clamps transients to 165.1 V at 9.1 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power bus protection and radar front-end surge suppression.
For engineers reviewing the JANTXV1N6168US/TR datasheet, JANTXV1N6168US/TR pinout, JANTXV1N6168US/TR application, or JANTXV1N6168US/TR equivalent, key selection criteria include its 1500 W peak pulse power rating, -55 °C to +175 °C operating junction temperature range, Category 1 metallurgical bonds, RoHS-compliant tin/lead terminations, and SQ-MELF "C" package compatibility with EIA-481-B tape-and-reel handling.
Technical Context
This TVS operates bidirectionally with no polarity marking and delivers robust transient suppression via hard-glass construction and internal tungsten-slug thermal path. Its 5.0 °C/W junction-to-end-cap thermal resistance enables stable 1500 W pulse dissipation under military-grade thermal cycling.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges), and is inherently radiation-hard per MicroNote 050 - critical for space-qualified subsystems where single-event burnout must be avoided.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 91.2 V - maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin below clamping threshold. |
| V(BR) min | 114.0 V @ 10 mA - guaranteed minimum breakdown voltage ensures predictable turn-on timing during overvoltage events. |
| VC @ IPP | 165.1 V @ 9.1 A (10/1000 µs) - clamping voltage limits downstream circuit stress during standardized surge pulses. |
| PPP | 1500 W - peak pulse power rating determines survivability against high-energy transients without degradation. |
| TJ Range | -55 °C to +175 °C - extended junction temperature range supports operation in harsh environments including engine bays and satellite payloads. |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap enables efficient heat transfer to PCB copper or heatsink interface. |
| ID @ VWM | 5 µA - ultra-low leakage current preserves signal integrity and minimizes standby power loss in high-impedance circuits. |
Pinout & Package
Package: SQ-MELF "C" - hermetically sealed voidless hard-glass case with tungsten slugs and tin/lead-plated copper terminals; weight ≈ 1100 mg; compatible with EIA-481-B tape-and-reel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Transient conduction path | No polarity marking; symmetric structure allows identical clamping in both directions - simplifies layout and eliminates orientation errors. |
| End Cap (both ends) | Thermal and electrical interface | Direct thermal path to PCB copper; dual-end termination supports high-current pulse return without trace inductance penalties. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in humid or vacuum environments. |
| Category 1 metallurgical bonds | Eliminates interfacial delamination under thermal shock (-55 °C ↔ +175 °C), ensuring reliability in missile guidance systems. |
| Triple-layer passivation | Blocks surface conduction paths on glass body, maintaining >10¹² Ω insulation resistance after 1000-hr damp heat testing. |
| MIL-PRF-19500/516 JANTXV qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing - required for DoD procurement contracts. |
Applications
| Avionics Power Bus Protection | Radar Front-End Surge Suppression |
|---|---|
Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit voltage excursions to ≤165.1 V during 10/1000 µs transients. Use Value: Prevents latch-up in flight control microcontrollers and avoids damage to MIL-STD-704 compliant DC-DC converters. |
Use Scenario: Shielding LNA inputs and mixer stages in airborne pulse-Doppler radar receivers from antenna-coupled lightning surges. IC Role / Device Role / Timing Role: Fast-response TVS placed at RF connector feedthrough to clamp induced common-mode transients before they reach sensitive GaAs MMICs. Use Value: Maintains receiver dynamic range by limiting transient overshoot to <165.1 V while preserving sub-pA leakage performance at 91.2 V bias. |
| Satellite Power Conditioning | Tactical Radio Transceiver Protection |
Use Scenario: Safeguarding DC-DC converter outputs in LEO satellite power management units exposed to solar array arc-induced transients. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at converter output filter capacitor to absorb repetitive 1500 W pulses without derating. Use Value: Enables radiation-hardened operation up to 175 °C junction temperature while meeting NASA-SSP-30215 surge immunity requirements. |
Use Scenario: Hardening HF/VHF manpack radio power inputs against EMP and ESD during field deployment in desert or maritime environments. IC Role / Device Role / Timing Role: Primary surge arrestor on battery input line, rated for 5 µA leakage to extend shelf life of sealed Li-ion packs. Use Value: Survives MIL-STD-461G CS115 conducted transient injection without parameter shift or visual discoloration of glass body. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6167US/TR | Lower VWM (86.6 V), lower VC (151.3 V @ 9.9 A), same 1500 W PPP and SQ-MELF package. | Better suited for 24 V nominal systems requiring tighter clamping margin below 150 V. | Select when system max transient voltage is constrained to <151.3 V and 24 V rail protection is primary requirement. |
| JANTXV1N6169US/TR | Higher VWM (98.8 V), higher VC (178.8 V @ 8.4 A), same 1500 W PPP and SQ-MELF package. | Preferred for 48 V telecom or vehicle battery systems where higher standoff reduces leakage and false triggering. | Choose for 48 V DC systems needing ≥98.8 V standoff with minimal standby current drift over temperature. |
Compared with JANTXV1N6168US/TR, JANTXV1N6167US/TR offers tighter clamping at lower voltage rails while JANTXV1N6169US/TR extends standoff headroom for higher-voltage architectures - all three share identical thermal design, MIL-PRF-19500/516 qualification, and mechanical footprint.
Availability
JANTXV1N6168US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, radar front-end surge suppression, satellite power conditioning, and tactical radio transceiver protection requiring stable component supply across long-lifecycle defense programs.
Supply support for JANTXV1N6168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
JANTXV1N6168US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for mission-critical surge protection in environments where failure is not an option - including launch vehicles, airborne radar, and secure communications platforms.
FAQ
What is the maximum clamping voltage of JANTXV1N6168US/TR under standard test conditions?
The JANTXV1N6168US/TR has a maximum clamping voltage (VC) of 165.1 V when subjected to a 10/1000 µs impulse waveform at 9.1 A peak pulse current. This value is measured per MIL-PRF-19500/516 test methods and reflects worst-case conduction behavior during standardized surge events. The JANTXV1N6168US/TR maintains this clamping performance across its full -55 °C to +175 °C operating junction temperature range.
Is JANTXV1N6168US/TR RoHS compliant?
JANTXV1N6168US/TR is not RoHS compliant - it uses tin/lead-plated copper terminations per MIL-PRF-19500/516 requirements for solderability and thermal fatigue resistance in high-reliability applications. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6168AUS without JAN/JANTXV prefix), not in JANTXV-qualified parts like JANTXV1N6168US/TR.
What package type does JANTXV1N6168US/TR use, and is it compatible with automated SMT placement?
JANTXV1N6168US/TR uses the SQ-MELF "C" package - a hermetically sealed voidless hard-glass cylindrical body with square end caps. It is fully compatible with EIA-481-B tape-and-reel handling and standard SMT pick-and-place equipment using vacuum nozzles designed for MELF components. The 0.205 inch (5.21 mm) body length and 0.183–0.202 inch (4.65–5.13 mm) diameter are supported by industry-standard feeder settings.
How does JANTXV1N6168US/TR differ from commercial-grade 1N6168AUS?
JANTXV1N6168US/TR differs from commercial 1N6168AUS in qualification level, screening, and construction: it undergoes full MIL-PRF-19500/516 JANTXV-level screening (including burn-in and temperature cycling), uses Category 1 metallurgical bonds, and features triple-layer passivation. The commercial 1N6168AUS lacks military screening, may use different bond types, and is offered in RoHS-compliant variants - whereas JANTXV1N6168US/TR is non-RoHS and built for extreme reliability.
Can JANTXV1N6168US/TR be used in bidirectional AC line protection?
Yes - JANTXV1N6168US/TR is inherently bidirectional and unmarked for polarity, making it suitable for symmetrical AC transient suppression such as in 115 VAC aircraft systems or isolated DC-DC gate drive lines. Its 91.2 V VWM and 165.1 V VC allow safe operation across ±90 V peaks, provided RMS voltage and thermal dissipation remain within steady-state ratings (3.0 W at 25 °C ambient).
JANTXV1N6168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 91.2V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 165.1V
- Current - Peak Pulse (10/1000µs):
- 9.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6168US/TR FAQ
1.How can I place an order for JANTXV1N6168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6168US/TR reliable?
The price and inventory of JANTXV1N6168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6168US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6168US/TR?
JANTXV1N6168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6168US/TR?
For technical support, including JANTXV1N6168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6168US/TR requirements.
6.How does Aetrix verify that JANTXV1N6168US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6168US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6168US/TR?
All JANTXV1N6168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6168US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6168US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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