Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTXV1N6168US/TR

Part No.:
JANTXV1N6168US/TR
Manufacturer:
Microchip Technology
Category:
TVS Diodes
Package:
SQ-MELF, C
Datasheet:
AetrixJANTXV1N6168US/TR.pdf
Description:
BI-DIRECTIONAL TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,048

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTXV1N6168US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level. It provides 91.2 V working peak standoff voltage (VWM), 114.0 V minimum breakdown voltage (V(BR)) at 10 mA, and clamps transients to 165.1 V at 9.1 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power bus protection and radar front-end surge suppression.

For engineers reviewing the JANTXV1N6168US/TR datasheet, JANTXV1N6168US/TR pinout, JANTXV1N6168US/TR application, or JANTXV1N6168US/TR equivalent, key selection criteria include its 1500 W peak pulse power rating, -55 °C to +175 °C operating junction temperature range, Category 1 metallurgical bonds, RoHS-compliant tin/lead terminations, and SQ-MELF "C" package compatibility with EIA-481-B tape-and-reel handling.

Technical Context

This TVS operates bidirectionally with no polarity marking and delivers robust transient suppression via hard-glass construction and internal tungsten-slug thermal path. Its 5.0 °C/W junction-to-end-cap thermal resistance enables stable 1500 W pulse dissipation under military-grade thermal cycling.

The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning-induced surges), and is inherently radiation-hard per MicroNote 050 - critical for space-qualified subsystems where single-event burnout must be avoided.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 91.2 V - maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin below clamping threshold.
V(BR) min 114.0 V @ 10 mA - guaranteed minimum breakdown voltage ensures predictable turn-on timing during overvoltage events.
VC @ IPP 165.1 V @ 9.1 A (10/1000 µs) - clamping voltage limits downstream circuit stress during standardized surge pulses.
PPP 1500 W - peak pulse power rating determines survivability against high-energy transients without degradation.
TJ Range -55 °C to +175 °C - extended junction temperature range supports operation in harsh environments including engine bays and satellite payloads.
RθJEC 5.0 °C/W - low thermal resistance from junction to end cap enables efficient heat transfer to PCB copper or heatsink interface.
ID @ VWM 5 µA - ultra-low leakage current preserves signal integrity and minimizes standby power loss in high-impedance circuits.

Pinout & Package

Package: SQ-MELF "C" - hermetically sealed voidless hard-glass case with tungsten slugs and tin/lead-plated copper terminals; weight ≈ 1100 mg; compatible with EIA-481-B tape-and-reel.

Pin/Terminal Circuit Role Design Meaning
Anode/Cathode (bidirectional) Transient conduction path No polarity marking; symmetric structure allows identical clamping in both directions - simplifies layout and eliminates orientation errors.
End Cap (both ends) Thermal and electrical interface Direct thermal path to PCB copper; dual-end termination supports high-current pulse return without trace inductance penalties.

Key Features

Feature Design Value
Voidless hermetic glass seal Prevents moisture ingress and internal corrosion over 20+ year field life in humid or vacuum environments.
Category 1 metallurgical bonds Eliminates interfacial delamination under thermal shock (-55 °C ↔ +175 °C), ensuring reliability in missile guidance systems.
Triple-layer passivation Blocks surface conduction paths on glass body, maintaining >10¹² Ω insulation resistance after 1000-hr damp heat testing.
MIL-PRF-19500/516 JANTXV qualification Validated screening includes burn-in, temperature cycling, and lot acceptance testing - required for DoD procurement contracts.

Applications

Avionics Power Bus Protection Radar Front-End Surge Suppression

Use Scenario: Protecting 28 V DC aircraft power distribution networks from load dump and inductive switching spikes.

IC Role / Device Role / Timing Role: Bidirectional clamping element placed across bus rails to limit voltage excursions to ≤165.1 V during 10/1000 µs transients.

Use Value: Prevents latch-up in flight control microcontrollers and avoids damage to MIL-STD-704 compliant DC-DC converters.

Use Scenario: Shielding LNA inputs and mixer stages in airborne pulse-Doppler radar receivers from antenna-coupled lightning surges.

IC Role / Device Role / Timing Role: Fast-response TVS placed at RF connector feedthrough to clamp induced common-mode transients before they reach sensitive GaAs MMICs.

Use Value: Maintains receiver dynamic range by limiting transient overshoot to <165.1 V while preserving sub-pA leakage performance at 91.2 V bias.

Satellite Power Conditioning Tactical Radio Transceiver Protection

Use Scenario: Safeguarding DC-DC converter outputs in LEO satellite power management units exposed to solar array arc-induced transients.

IC Role / Device Role / Timing Role: Standoff-rated TVS mounted directly at converter output filter capacitor to absorb repetitive 1500 W pulses without derating.

Use Value: Enables radiation-hardened operation up to 175 °C junction temperature while meeting NASA-SSP-30215 surge immunity requirements.

Use Scenario: Hardening HF/VHF manpack radio power inputs against EMP and ESD during field deployment in desert or maritime environments.

IC Role / Device Role / Timing Role: Primary surge arrestor on battery input line, rated for 5 µA leakage to extend shelf life of sealed Li-ion packs.

Use Value: Survives MIL-STD-461G CS115 conducted transient injection without parameter shift or visual discoloration of glass body.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N6167US/TR Lower VWM (86.6 V), lower VC (151.3 V @ 9.9 A), same 1500 W PPP and SQ-MELF package. Better suited for 24 V nominal systems requiring tighter clamping margin below 150 V. Select when system max transient voltage is constrained to <151.3 V and 24 V rail protection is primary requirement.
JANTXV1N6169US/TR Higher VWM (98.8 V), higher VC (178.8 V @ 8.4 A), same 1500 W PPP and SQ-MELF package. Preferred for 48 V telecom or vehicle battery systems where higher standoff reduces leakage and false triggering. Choose for 48 V DC systems needing ≥98.8 V standoff with minimal standby current drift over temperature.

Compared with JANTXV1N6168US/TR, JANTXV1N6167US/TR offers tighter clamping at lower voltage rails while JANTXV1N6169US/TR extends standoff headroom for higher-voltage architectures - all three share identical thermal design, MIL-PRF-19500/516 qualification, and mechanical footprint.

Availability

JANTXV1N6168US/TR is available at Aetrix Electronics and suitable for avionics power bus protection, radar front-end surge suppression, satellite power conditioning, and tactical radio transceiver protection requiring stable component supply across long-lifecycle defense programs.

Supply support for JANTXV1N6168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.

JANTXV1N6168US/TR belongs to Microsemi's military-qualified TVS diode family engineered specifically for mission-critical surge protection in environments where failure is not an option - including launch vehicles, airborne radar, and secure communications platforms.

FAQ

What is the maximum clamping voltage of JANTXV1N6168US/TR under standard test conditions?

The JANTXV1N6168US/TR has a maximum clamping voltage (VC) of 165.1 V when subjected to a 10/1000 µs impulse waveform at 9.1 A peak pulse current. This value is measured per MIL-PRF-19500/516 test methods and reflects worst-case conduction behavior during standardized surge events. The JANTXV1N6168US/TR maintains this clamping performance across its full -55 °C to +175 °C operating junction temperature range.

Is JANTXV1N6168US/TR RoHS compliant?

JANTXV1N6168US/TR is not RoHS compliant - it uses tin/lead-plated copper terminations per MIL-PRF-19500/516 requirements for solderability and thermal fatigue resistance in high-reliability applications. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N6168AUS without JAN/JANTXV prefix), not in JANTXV-qualified parts like JANTXV1N6168US/TR.

What package type does JANTXV1N6168US/TR use, and is it compatible with automated SMT placement?

JANTXV1N6168US/TR uses the SQ-MELF "C" package - a hermetically sealed voidless hard-glass cylindrical body with square end caps. It is fully compatible with EIA-481-B tape-and-reel handling and standard SMT pick-and-place equipment using vacuum nozzles designed for MELF components. The 0.205 inch (5.21 mm) body length and 0.183–0.202 inch (4.65–5.13 mm) diameter are supported by industry-standard feeder settings.

How does JANTXV1N6168US/TR differ from commercial-grade 1N6168AUS?

JANTXV1N6168US/TR differs from commercial 1N6168AUS in qualification level, screening, and construction: it undergoes full MIL-PRF-19500/516 JANTXV-level screening (including burn-in and temperature cycling), uses Category 1 metallurgical bonds, and features triple-layer passivation. The commercial 1N6168AUS lacks military screening, may use different bond types, and is offered in RoHS-compliant variants - whereas JANTXV1N6168US/TR is non-RoHS and built for extreme reliability.

Can JANTXV1N6168US/TR be used in bidirectional AC line protection?

Yes - JANTXV1N6168US/TR is inherently bidirectional and unmarked for polarity, making it suitable for symmetrical AC transient suppression such as in 115 VAC aircraft systems or isolated DC-DC gate drive lines. Its 91.2 V VWM and 165.1 V VC allow safe operation across ±90 V peaks, provided RMS voltage and thermal dissipation remain within steady-state ratings (3.0 W at 25 °C ambient).

JANTXV1N6168US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Package/Case:
SQ-MELF, C
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
91.2V
Voltage - Breakdown (Min):
114V
Voltage - Clamping (Max) @ Ipp:
165.1V
Current - Peak Pulse (10/1000µs):
9.1A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
C, SQ-MELF

JANTXV1N6168US/TR FAQ

1.How can I place an order for JANTXV1N6168US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N6168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N6168US/TR reliable?

The price and inventory of JANTXV1N6168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6168US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N6168US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6168US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N6168US/TR?

JANTXV1N6168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N6168US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N6168US/TR?

For technical support, including JANTXV1N6168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6168US/TR requirements.

6.How does Aetrix verify that JANTXV1N6168US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N6168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6168US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N6168US/TR?

All JANTXV1N6168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6168US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N6168US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N6168US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTXV1N6168US/TR Tags

  • JANTXV1N6168US/TR
  • JANTXV1N6168US/TR PDF
  • JANTXV1N6168US/TR Datasheet
  • JANTXV1N6168US/TR Specifications
  • JANTXV1N6168US/TR Images
  • Microchip Technology
  • Microchip Technology JANTXV1N6168US/TR
  • Buy JANTXV1N6168US/TR
  • JANTXV1N6168US/TR Price
  • JANTXV1N6168US/TR Distributor
  • JANTXV1N6168US/TR Supplier
  • JANTXV1N6168US/TR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER