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Microchip Technology JANTXV1N6169AUS/TR
- Part No.:
- JANTXV1N6169AUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6169AUS/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,078
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Product details
Overview
JANTXV1N6169AUS/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 JANTXV level. It provides 98.8 V working standoff voltage (VWM), 123.5 V minimum breakdown voltage (V(BR)) at 10 mA, and clamps transients to 178.8 V at 8.4 A peak pulse current (IPP) for 10/1000 µs waveform - deployed in avionics power rail protection and radar front-end surge suppression.
For engineers reviewing the JANTXV1N6169AUS/TR datasheet, JANTXV1N6169AUS/TR pinout, JANTXV1N6169AUS/TR application, or JANTXV1N6169AUS/TR equivalent, key selection criteria include its military-grade reliability, 1500 W peak pulse power rating, bidirectional clamping behavior, -55°C to +175°C operating junction temperature range, and SQ-MELF "C" package compatibility with automated SMT placement.
Technical Context
This TVS operates as a voltage-clamped shunt protector with symmetrical bidirectional avalanche conduction - no polarity marking required. Its hard-glass hermetic construction uses internal Category 1 metallurgical bonds and triple-layer passivation to ensure radiation hardness and ESD immunity per MIL-STD-750 Method 1020.
It delivers 1500 W peak pulse power (10/1000 µs) with thermal resistance of 5.0 °C/W (junction-to-end cap), enabling robust transient suppression in high-reliability systems where failure is unacceptable. Standby current is ≤5 µA at 98.8 V, and temperature coefficient of V(BR) is +0.105 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 98.8 V - maximum continuous reverse standoff voltage before leakage exceeds 5 µA; defines safe operating margin below clamping threshold. |
| V(BR) min | 123.5 V @ 10 mA - guaranteed avalanche initiation voltage; ensures predictable turn-on during overvoltage events. |
| VC @ IPP | 178.8 V @ 8.4 A - clamping voltage under 10/1000 µs surge; determines maximum stress imposed on protected circuitry. |
| PPP | 1500 W - peak pulse power handling capability; supports lightning-induced surges per IEC61000-4-5 Level 3–4. |
| TJ Range | -55°C to +175°C - extended junction temperature range enables deployment in engine bay, space-grade, and airborne electronics. |
| RθJEC | 5.0 °C/W - low thermal resistance from junction to end cap; allows efficient heat dissipation into PCB copper or heatsink. |
| αV(BR) | +0.105 %/°C - positive temperature coefficient ensures stable breakdown voltage across wide ambient ranges. |
Pinout & Package
Package: SQ-MELF "C" - hermetically sealed voidless hard glass case with tungsten slugs and tin/lead-plated copper terminals. Square-end-cap geometry enables precise pick-and-place alignment and reliable reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (bidirectional) | Surge current path | No polarity marking; either terminal serves as anode or cathode depending on transient polarity - simplifies layout and eliminates orientation errors. |
| End Cap (both ends) | Thermal interface | Direct thermal path from junction to PCB pad or heatsink; requires full-surface solder contact for rated RθJEC = 5.0 °C/W. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints. |
| Category 1 metallurgical bonds | Guarantees mechanical integrity and bond strength under thermal cycling, shock, and vibration per MIL-PRF-19500/516. |
| Voidless hermetic seal | Prevents moisture ingress and long-term parameter drift - critical for >20-year field life in sealed military enclosures. |
| Triple-layer passivation | Reduces surface leakage and enhances stability in high-humidity, salt-fog, or radiation environments. |
| MIL-PRF-19500/516 JANTXV qualification | Validates screening, testing, and lot traceability for flight-critical and mission-essential systems. |
Applications
| Avionics Power Distribution | Radar RF Front-End Protection |
|---|---|
Use Scenario: Protecting 28 V DC bus inputs in airborne navigation computers against load dump and induced lightning surges. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly across input filter capacitor. Use Value: Clamps 178.8 V at 8.4 A to prevent damage to downstream DC/DC converters and FPGAs while maintaining 98.8 V system operating margin. |
Use Scenario: Safeguarding LNA inputs in X-band radar receivers from ESD and antenna-coupled transients. IC Role / Device Role / Timing Role: Bidirectional voltage clamp mounted at RF connector feedthrough point. Use Value: Symmetrical clamping preserves signal integrity on balanced RF paths and meets IEC61000-4-2 Level 4 (±15 kV air discharge) requirements. |
| Tactical Vehicle Control Systems | Spacecraft Power Conditioning |
Use Scenario: Suppressing alternator-induced spikes on CAN bus power rails in armored ground vehicles. IC Role / Device Role / Timing Role: Primary surge protection stage upstream of isolated DC/DC and CAN transceivers. Use Value: Withstands 1500 W pulses and operates reliably from -55°C to +175°C - eliminating derating concerns in desert or arctic deployments. |
Use Scenario: Guarding solar array regulator inputs against secondary lightning effects and single-event burnout in LEO satellites. IC Role / Device Role / Timing Role: Radiation-hardened TVS integrated into redundant power management module. Use Value: Inherent radiation tolerance per MicroNote 050 and hermetic seal ensure zero parametric shift after 100 krad(Si) total ionizing dose exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6168AUS/TR | Lower VWM (91.2 V), lower VC (165.1 V), higher IPP (9.1 A); same package and qualification level. | Better suited for 24 V nominal systems requiring tighter clamping margin. | Select when system max operating voltage is ≤91.2 V and lower clamping voltage is prioritized over standoff headroom. |
| JANTXV1N6170AUS/TR | Higher VWM (114.0 V), higher VC (206.3 V), lower IPP (7.3 A); identical construction and qualification. | Preferred for 110 V DC distribution or high-voltage sensor interfaces needing wider standoff range. | Choose when protecting circuits with ≥114 V steady-state operation and where higher clamping voltage is acceptable for increased surge margin. |
Compared with JANTXV1N6169AUS/TR, JANTXV1N6168AUS/TR offers tighter clamping at lower voltage but reduced standoff headroom, while JANTXV1N6170AUS/TR extends standoff capability at the cost of higher clamping - both retain identical military screening, thermal performance, and SQ-MELF packaging.
Availability
JANTXV1N6169AUS/TR is available at Aetrix Electronics and suitable for avionics power distribution, radar RF front-end protection, tactical vehicle control systems, and spacecraft power conditioning requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N6169AUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets - emphasizing radiation tolerance, extended temperature operation, and military qualification.
The JANTXV1N6169AUS/TR belongs to Microsemi's MIL-PRF-19500/516-qualified TVS family, engineered specifically for mission-critical surge protection where hermetic sealing, Category 1 bonding, and deterministic clamping behavior are non-negotiable.
FAQ
What is the maximum clamping voltage of JANTXV1N6169AUS/TR under standard test conditions?
The JANTXV1N6169AUS/TR has a maximum clamping voltage (VC) of 178.8 V when subjected to an 8.4 A peak pulse current (IPP) with a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test methods and defines the upper voltage limit imposed on protected circuitry during transient events. The JANTXV1N6169AUS/TR maintains this clamping performance across its full -55°C to +175°C junction temperature range.
Is JANTXV1N6169AUS/TR suitable for bidirectional signal line protection?
Yes, JANTXV1N6169AUS/TR is inherently bidirectional due to its symmetrical avalanche structure and absence of polarity marking. It provides identical clamping behavior for positive and negative transients, making it ideal for protecting AC-coupled data lines, transformer-isolated interfaces, or floating power domains. The JANTXV1N6169AUS/TR does not require orientation verification during placement, reducing assembly risk in high-reliability manufacturing.
Does JANTXV1N6169AUS/TR meet IEC61000-4-5 surge immunity standards?
Yes, JANTXV1N6169AUS/TR is validated for protection against secondary effects of lightning per IEC61000-4-5, supporting Level 3 (2 kV line-to-earth, 1 kV line-to-line) and Level 4 (4 kV line-to-earth, 2 kV line-to-line) tests when properly implemented with appropriate PCB layout and series impedance. Its 1500 W peak pulse power rating and 178.8 V clamping voltage enable compliance in conjunction with system-level design practices.
What is the thermal resistance specification for JANTXV1N6169AUS/TR?
JANTXV1N6169AUS/TR has a junction-to-end cap thermal resistance (RθJEC) of 5.0 °C/W, measured under standardized conditions per MIL-PRF-19500/516. This low thermal resistance enables effective heat transfer from the silicon junction through the tungsten slug and glass body into the PCB copper or external heatsink. Maintaining full-surface solder contact on both end caps is required to achieve the rated RθJEC value in actual JANTXV1N6169AUS/TR applications.
How does the JANTXV1N6169AUS/TR differ from commercial-grade 1N6169AUS variants?
JANTXV1N6169AUS/TR undergoes full MIL-PRF-19500/516 screening including extended temperature cycling, hermeticity testing, and lot traceability - unlike commercial 1N6169AUS which lacks military qualification. It also features tighter parameter tolerances, Category 1 metallurgical bonds, and triple-layer passivation. The JANTXV1N6169AUS/TR is rated for operation up to +175°C junction temperature, whereas commercial versions are typically limited to +150°C.
JANTXV1N6169AUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 98.8V
- Voltage - Breakdown (Min):
- 123.5V
- Voltage - Clamping (Max) @ Ipp:
- 178.8V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6169AUS/TR FAQ
1.How can I place an order for JANTXV1N6169AUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6169AUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6169AUS/TR reliable?
The price and inventory of JANTXV1N6169AUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6169AUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6169AUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6169AUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6169AUS/TR?
JANTXV1N6169AUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6169AUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6169AUS/TR?
For technical support, including JANTXV1N6169AUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6169AUS/TR requirements.
6.How does Aetrix verify that JANTXV1N6169AUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6169AUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6169AUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6169AUS/TR?
All JANTXV1N6169AUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6169AUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6169AUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6169AUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6169AUS/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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