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Microchip Technology JANTXV1N6171US/TR
- Part No.:
- JANTXV1N6171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6171US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,399
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Product details
Overview
JANTXV1N6171US/TR from Microsemi is a voidless hermetically sealed surface-mount bidirectional Transient Voltage Suppressor (TVS) qualified to MIL-PRF-19500/516 at JANTXV level, with 121.6 V working standoff voltage (VWM), 218.4 V clamping voltage (VC) at 6.9 A peak pulse current (IPP), and 1500 W peak pulse power for 10/1000 µs waveform - deployed in avionics power rail protection.
For engineers reviewing the JANTXV1N6171US/TR datasheet, JANTXV1N6171US/TR pinout, JANTXV1N6171US/TR application, or JANTXV1N6171US/TR equivalent, key selection criteria include military-grade reliability, bidirectional surge clamping performance under IEC61000-4-5 lightning-induced transients, thermal derating above 150 °C, and compatibility with SQ-MELF reflow profiles up to 260 °C.
Technical Context
This TVS operates bidirectionally with no polarity marking and uses internal Category 1 metallurgical bonds within a hard-glass hermetic package to ensure radiation hardness and ESD immunity per MIL-STD-750 Method 1020. Its breakdown voltage is 152.0 V at 8 mA test current, with temperature coefficient αV(BR) of 0.105 %/°C.
The device delivers 1500 W peak pulse power under standardized 10/1000 µs waveform, with thermal resistance junction-to-end cap (RθJEC) of 5.0 °C/W and operational junction temperature range from –55 °C to +175 °C - enabling use in high-temperature aerospace environments where failure tolerance is non-negotiable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 121.6 V - maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin below clamping threshold |
| V(BR) @ I(BR) | 152.0 V @ 8 mA - precise breakdown initiation point; ensures predictable turn-on during overvoltage events |
| VC @ IPP | 218.4 V @ 6.9 A - clamping voltage during 10/1000 µs surge; limits downstream circuit stress to safe levels |
| PPP | 1500 W - peak pulse power handling capability; sustains single high-energy transients without degradation |
| TJ Range | –55 °C to +175 °C - extended junction temperature range supports operation in sealed avionics enclosures |
| RθJEC | 5.0 °C/W - low thermal resistance enables effective heat transfer to PCB end-cap mounting points |
| αV(BR) | 0.105 %/°C - predictable voltage drift with temperature; critical for stable clamping across flight envelope |
Pinout & Package
Package: SQ-MELF (Surface-mount Square-end-cap Metal Electrode Leadless Face), hermetically sealed voidless hard glass with tungsten slugs; terminals are tin/lead plated copper; weight ≈ 1100 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode | Bidirectional terminal pair | No polarity marking; either end serves as anode or cathode depending on transient polarity - simplifies layout and eliminates orientation errors |
| End Cap | Thermal & mechanical interface | Primary heat path to PCB; requires direct solder contact to copper pour for RθJEC = 5.0 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Protects AC-coupled and floating signal/power lines without polarity constraints or external diode pairing |
| Category 1 metallurgical bonds | Ensures bond integrity under thermal cycling and mechanical shock - required for MIL-PRF-19500/516 JANTXV qualification |
| Voidless hermetic seal | Prevents moisture ingress and internal corrosion over 20+ year service life in sealed military chassis |
| IEC61000-4-5 compliance | Validated clamping response to lightning-induced surges up to select severity levels - reduces need for system-level retesting |
Applications
| Aerospace Power Distribution | Avionics Sensor Interface |
|---|---|
Use Scenario: Protection of 28 V DC bus feeders in fly-by-wire control units against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed directly at bus entry point to limit transient overvoltage before it reaches DC-DC converters. Use Value: Maintains VWM = 121.6 V margin above nominal 28 V bus while clamping to 218.4 V - preventing MOSFET gate oxide rupture in upstream regulators. | Use Scenario: Shielding analog sensor inputs (e.g., pitot-static, temperature transducers) from EFT bursts during ground handling. IC Role / Device Role / Timing Role: Low-leakage (<5 µA @ VWM) transient shunt mounted at connector interface to absorb IEC61000-4-4 4 kV pulses. Use Value: Standby current <5 µA avoids loading precision ratiometric sensor bridges; bidirectional symmetry preserves AC-coupled signal integrity. |
| Military Radio Front-End | Satellite Payload Power Conditioning |
Use Scenario: Input-stage protection for HF/VHF transceiver power supplies exposed to EMP-like fast transients. IC Role / Device Role / Timing Role: Primary surge clamp on unregulated 270 V DC input rail, coordinated with upstream fuse and downstream LC filter. Use Value: 1500 W PPP rating handles single-event energy spikes without parametric shift; RoHS-compliant matte-tin option available for commercial variants. | Use Scenario: Secondary-side overvoltage suppression in isolated DC-DC modules powering FPGA-based telemetry processors. IC Role / Device Role / Timing Role: Clamp positioned after isolation barrier to protect low-voltage logic rails from reflected transients. Use Value: Junction temperature rating up to +175 °C enables operation inside thermally constrained satellite payload bays without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6170US/TR | VWM = 114.0 V, VC = 206.3 V @ 7.3 A, PPP = 1500 W - lower clamping threshold by 12.1 V | Better suited for 100 V nominal systems where tighter clamping margin is required | Select when system max transient voltage must stay below 210 V; verify coordination with upstream fusing |
| JANTXV1N6172US/TR | VWM = 136.8 V, VC = 245.7 V @ 6.1 A, PPP = 1500 W - higher standoff but elevated clamping | Applicable in 150 V DC distribution where higher VWM prevents nuisance conduction | Choose for legacy 130–140 V bus architectures; confirm downstream component VDS(max) > 245.7 V |
Compared with JANTXV1N6170US/TR and JANTXV1N6172US/TR, the JANTXV1N6171US/TR provides optimal balance between 121.6 V standoff and 218.4 V clamping - making it the preferred choice for modern 120 V-class avionics power rails requiring both margin and robustness.
Availability
JANTXV1N6171US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interface, military radio front-end, and satellite payload power conditioning requiring stable component supply across long-lifecycle programs.
Supply support for JANTXV1N6171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The 1N6138AUS–1N6173AUS series was developed specifically for military-grade transient suppression in mission-critical platforms where hermetic sealing, Category 1 bonding, and MIL-PRF-19500/516 qualification are mandatory.
FAQ
What is the clamping voltage of JANTXV1N6171US/TR under standard 10/1000 µs surge conditions?
The JANTXV1N6171US/TR has a maximum clamping voltage (VC) of 218.4 V at 6.9 A peak pulse current (IPP) for a 10/1000 µs waveform. This value is measured per MIL-PRF-19500/516 test conditions and reflects the actual voltage seen by protected circuitry during surge events - critical for ensuring downstream components remain within their absolute maximum ratings. The JANTXV1N6171US/TR maintains this performance across its full operating temperature range.
Is JANTXV1N6171US/TR compatible with lead-free reflow processes?
JANTXV1N6171US/TR is rated for solder temperature up to 260 °C for 10 seconds, meeting standard lead-free reflow profiles. However, its terminals are specified as tin/lead plated copper per the datasheet; RoHS-compliant matte-tin plating is available only on commercial-grade versions (non-JANTXV). For JANTXV1N6171US/TR, tin/lead assembly is recommended unless process validation confirms compatibility with Pb-free thermal cycles.
Does JANTXV1N6171US/TR require polarity-aware PCB layout?
No - the JANTXV1N6171US/TR is a bidirectional TVS with no polarity marking, meaning either end functions identically as anode or cathode depending on transient polarity. This eliminates orientation constraints during placement and reduces risk of assembly error. The device's symmetric IV curve ensures identical clamping behavior for positive and negative transients, which is essential for protecting AC-coupled or floating circuits.
How does the thermal performance of JANTXV1N6171US/TR support high-reliability deployment?
JANTXV1N6171US/TR features a junction-to-end-cap thermal resistance (RθJEC) of 5.0 °C/W and operates from –55 °C to +175 °C. Its hard-glass hermetic package with tungsten slugs enables direct heat transfer to the PCB end-cap pads, supporting stable operation in sealed, convection-limited environments like avionics enclosures. Derating begins linearly above 150 °C, reaching zero power at 175 °C - a key enabler for extended mission profiles.
What standards compliance is verified for JANTXV1N6171US/TR?
JANTXV1N6171US/TR is qualified to MIL-PRF-19500/516 at JANTXV level and provides documented protection per IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select levels of IEC61000-4-5 (lightning surge). It is also non-sensitive to ESD per MIL-STD-750 Method 1020 and inherently radiation-hard per Microsemi MicroNote 050 - all verified through manufacturer testing and included in the official T4-LDS-0278-1 datasheet for JANTXV1N6171US/TR.
JANTXV1N6171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 121.6V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 218.4V
- Current - Peak Pulse (10/1000µs):
- 6.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6171US/TR FAQ
1.How can I place an order for JANTXV1N6171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6171US/TR reliable?
The price and inventory of JANTXV1N6171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6171US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6171US/TR?
JANTXV1N6171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6171US/TR?
For technical support, including JANTXV1N6171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6171US/TR requirements.
6.How does Aetrix verify that JANTXV1N6171US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6171US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6171US/TR?
All JANTXV1N6171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6171US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6171US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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