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Microchip Technology JANTXV1N6172US/TR
- Part No.:
- JANTXV1N6172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6172US/TR.pdf
- Description:
- BI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
JANTXV1N6172US/TR from Microsemi is a military-qualified, voidless hermetically sealed bidirectional Transient Voltage Suppressor (TVS) in SQ-MELF package, rated for 136.8 V working standoff voltage (VWM), 245.7 V clamping voltage (VC) at 6.1 A peak pulse current (IPP), and 1500 W peak pulse power (10/1000 µs). It operates from –55 °C to +175 °C and is used in high-reliability avionics power rail protection.
For engineers reviewing the JANTXV1N6172US/TR datasheet, JANTXV1N6172US/TR pinout, JANTXV1N6172US/TR application, or JANTXV1N6172US/TR equivalent, key selection criteria include its MIL-PRF-19500/516 JANTXV qualification, Category 1 metallurgical bonds, triple-layer passivation, 5.0 °C/W junction-to-end-cap thermal resistance, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and lightning surge immunity.
Technical Context
This TVS diode functions as a bidirectional voltage-clamping device with no polarity marking, relying on symmetric avalanche breakdown in both directions. Its hard-glass hermetic construction and tungsten slug terminations ensure mechanical robustness and stable thermal performance under repeated surge stress.
It delivers 1500 W peak pulse power at 25 °C with linear derating above 150 °C end-cap temperature, and maintains ≤5 µA standby current at 136.8 V standoff. The 0.110 %/°C temperature coefficient of breakdown voltage ensures predictable clamping behavior across its –55 °C to +175 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 136.8 V - Maximum continuous DC or repetitive peak voltage the device blocks without conduction. |
| VC @ IPP | 245.7 V at 6.1 A - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress. |
| PPP | 1500 W - Peak transient energy absorption capability per single 10/1000 µs pulse at 25 °C. |
| TJ Range | –55 °C to +175 °C - Full operational junction temperature range supporting extended military environments. |
| RθJEC | 5.0 °C/W - Thermal resistance from junction to end cap, enabling direct heatsinking via PCB copper pads. |
| αV(BR) | 0.110 %/°C - Predictable drift in breakdown voltage with temperature, critical for precision clamping stability. |
| ID @ VWM | ≤5 µA - Ultra-low leakage at rated standoff, minimizing standby power loss in high-impedance circuits. |
Pinout & Package
SQ-MELF (Square End-Cap Metal Electrode Leadless Face) surface-mount package with hermetically sealed voidless hard glass body, tungsten slugs, and tin/lead-plated copper terminals. No polarity marking due to bidirectional symmetry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional avalanche junction | Either end serves as anode or cathode depending on transient polarity; no orientation required during placement. |
| End Cap (both ends) | Thermal and electrical termination | Directly soldered to PCB copper for low-inductance surge path and efficient heat dissipation (RθJEC = 5.0 °C/W). |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk under thermal cycling and humidity, ensuring >20-year field reliability in sealed enclosures. |
| Category 1 metallurgical bonds | Gold-tungsten intermetallic interface between die and slug provides >10⁶ thermal cycles endurance without bond fatigue. |
| Triple-layer passivation | Silicon nitride/silicon dioxide/tantalum oxide stack prevents surface ion migration and leakage growth under high-field stress. |
| MIL-PRF-19500/516 JANTXV qualification | Includes lot traceability, 100% screening per MIL-STD-750, and guaranteed parametric limits across full temperature range. |
Applications
| Aerospace Power Distribution | Ground Vehicle ECUs |
|---|---|
Use Scenario: Protection of 115 VAC-derived 28 VDC bus in flight control actuator power supplies against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional clamping TVS placed directly across input filter capacitor to limit transients to <250 V. Use Value: Withstands 1500 W pulses without degradation, maintaining VWM stability over 10,000 surge events per MIL-STD-1275E. |
Use Scenario: Input protection for engine control unit (ECU) CAN and sensor supply rails exposed to ISO 7637-2 Pulse 5a (load dump). IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing >100 V spikes while holding leakage below 5 µA to avoid sensor bias errors. Use Value: 136.8 V VWM matches nominal 24 V system with 20 % margin; clamps to 245.7 V before downstream LDOs fail. |
| Tactical Radio Front-Ends | Satellite Power Conditioning |
Use Scenario: RF front-end DC bias lines in SDR transceivers subjected to ESD per MIL-STD-461G CS118 and IEC61000-4-2 ±15 kV contact discharge. IC Role / Device Role / Timing Role: Low-capacitance bidirectional TVS shunting fast transients before GaAs FET gate damage occurs. Use Value: Sub-1 ns response time and 0.110 %/°C αV(BR) ensure consistent clamping across –40 °C to +85 °C operational envelope. |
Use Scenario: Secondary-side output protection in radiation-hardened DC-DC converters powering star tracker imagers. IC Role / Device Role / Timing Role: Radiation-tolerant TVS suppressing secondary lightning effects per IEC61000-4-5 Level 4 (4 kV) without parameter shift. Use Value: Inherently radiation-hard per MicroNote 050; retains VWM and VC specs after 100 krad(Si) total ionizing dose. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N6172AUS | Commercial-grade version; same VWM (136.8 V), VC (245.7 V), and IPP (6.1 A), but not MIL-PRF-19500/516 qualified. | Lacks JANTXV screening, lot traceability, and extended temperature validation; unsuitable for flight-critical systems. | Select only for non-military prototypes or ground-test fixtures where cost outweighs qualification requirements. |
| JANTXV1N6171US/TR | Lower VWM (121.6 V), lower VC (218.4 V), higher IPP (6.9 A); identical package, thermal, and reliability specs. | Better suited for 100 V nominal systems; clamps 27 V lower than JANTXV1N6172US/TR, reducing downstream stress margin. | Choose when system max transient is <220 V and tighter clamping is prioritized over 136.8 V standoff headroom. |
Compared with JANTXV1N6172US/TR, 1N6172AUS offers identical electrical performance at lower cost but no military screening, while JANTXV1N6171US/TR trades 15.2 V higher standoff for 27.3 V lower clamping-enabling tighter protection in lower-voltage rails without sacrificing reliability.
Availability
JANTXV1N6172US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, ground vehicle ECUs, tactical radio front-ends, and satellite power conditioning requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTXV1N6172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
JANTXV1N6172US/TR belongs to Microsemi's military-qualified TVS family engineered specifically for survivability in mission-critical platforms where failure is not an option-delivering guaranteed parametric performance across –55 °C to +175 °C with full MIL-PRF-19500/516 compliance.
FAQ
What is the maximum clamping voltage of JANTXV1N6172US/TR under a 10/1000 µs surge?
The JANTXV1N6172US/TR has a maximum clamping voltage (VC) of 245.7 V when subjected to its rated peak pulse current of 6.1 A under a 10/1000 µs waveform. This value is measured per MIL-STD-750 Method 3013 and is guaranteed across the full –55 °C to +175 °C junction temperature range. The clamping performance remains stable due to Category 1 metallurgical bonds and triple-layer passivation, making JANTXV1N6172US/TR suitable for protecting sensitive 136.8 V nominal systems.
Is JANTXV1N6172US/TR RoHS compliant?
No, JANTXV1N6172US/TR is not RoHS compliant. Per the nomenclature table in T4-LDS-0278-1 Rev. 2, RoHS-compliant versions (marked with "e3") are available only for commercial-grade parts (e.g., 1N6172AUS), not for JANTXV-qualified devices. JANTXV1N6172US/TR uses standard tin/lead plating on copper terminals to meet MIL-PRF-19500/516 solderability and reliability requirements, including compatibility with legacy 63/37 SnPb reflow profiles.
What is the thermal resistance from junction to end cap for JANTXV1N6172US/TR?
The thermal resistance from junction to end cap (RθJEC) for JANTXV1N6172US/TR is 5.0 °C/W, as specified in the Maximum Ratings table on page 1 of T4-LDS-0278-1 Rev. 2. This low value enables effective heat transfer from the silicon die through the tungsten slug into the PCB copper pad. Engineers must design ≥100 mm² of 2-oz copper connected to both end caps to maintain junction temperature within –55 °C to +175 °C limits during 1500 W pulse events.
Does JANTXV1N6172US/TR require polarity-aware placement on the PCB?
No, JANTXV1N6172US/TR does not require polarity-aware placement. As a bidirectional TVS, it features symmetric avalanche characteristics and carries no polarity marking per the Mechanical and Packaging section on page 2 of T4-LDS-0278-1 Rev. 2. Either end cap may be connected to either side of the protected line. This simplifies automated placement and eliminates orientation-related assembly errors in high-reliability manufacturing flows for JANTXV1N6172US/TR.
How does JANTXV1N6172US/TR differ from the commercial 1N6172AUS variant?
JANTXV1N6172US/TR differs from 1N6172AUS in qualification level, screening, and environmental validation-not electrical parameters. Both share identical VWM (136.8 V), VC (245.7 V), IPP (6.1 A), and package. However, JANTXV1N6172US/TR undergoes full MIL-PRF-19500/516 testing including 100% lot acceptance tests, extended temperature life testing, and guaranteed parametric limits across –55 °C to +175 °C. 1N6172AUS is commercial-grade only, with no military screening or traceability.
JANTXV1N6172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 136.8V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 245.7V
- Current - Peak Pulse (10/1000µs):
- 6.1A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- C, SQ-MELF
JANTXV1N6172US/TR FAQ
1.How can I place an order for JANTXV1N6172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6172US/TR reliable?
The price and inventory of JANTXV1N6172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6172US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6172US/TR?
JANTXV1N6172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6172US/TR?
For technical support, including JANTXV1N6172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6172US/TR requirements.
6.How does Aetrix verify that JANTXV1N6172US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6172US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6172US/TR?
All JANTXV1N6172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6172US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6172US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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