My Inquiry
My Account
Microchip Technology JANTXV1N6465US/TR
- Part No.:
- JANTXV1N6465US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N6465US/TR.pdf
- Description:
- UNI-DIRECTIONAL TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,599
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N6465US/TR from Microsemi is a military-qualified, voidless hermetically sealed unidirectional TVS diode in SQ-MELF package, with 24 V working standoff voltage (VWM), 41.4 V clamping voltage (VC) at 69 A peak impulse current (IPP), and 500 W peak pulse power (PPP), used for lightning surge and ESD protection in avionics power rails.
For engineers reviewing the JANTXV1N6465US/TR datasheet, JANTXV1N6465US/TR pinout, JANTXV1N6465US/TR application, or JANTXV1N6465US/TR equivalent, key selection criteria include VWM tolerance, clamping ratio (VC/VWM = 1.725), MIL-PRF-19500/551 JANTXV screening level, thermal resistance (20 °C/W), and Category 1 metallurgical bond reliability.
Technical Context
This device operates as a unidirectional avalanche breakdown protector with fixed polarity (cathode band marked), designed to clamp transient overvoltages above its 27.0 V minimum breakdown voltage (V(BR)) while maintaining ≤50 µA standby current (ID) at 24 V standoff. Its hard glass hermetic seal and tungsten slug construction ensure survivability under thermal shock and radiation exposure.
It delivers 69 A peak impulse current (IPP) under 10/1000 µs waveform with 41.4 V clamping voltage (VC), achieving a clamping ratio of 1.725 - critical for protecting downstream 28 V DC systems without over-clamping. Temperature coefficient of breakdown voltage is +0.096 %/°C, enabling stable operation across –55 °C to +175 °C junction range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 24 V - maximum continuous reverse voltage before conduction; sets operating margin for 28 V nominal aerospace bus |
| V(BR) min | 27.0 V @ 2 mA - guaranteed avalanche onset threshold; ensures reliable turn-on during transients |
| VC @ IPP | 41.4 V @ 69 A (10/1000 µs) - clamped voltage seen by protected circuit; limits stress on downstream regulators |
| PPP | 500 W - peak transient energy handling capacity; supports IEC61000-4-5 Level 3 (1 kV/2 Ω) surge immunity |
| ID @ VWM | ≤50 µA - leakage current at rated standoff; minimizes quiescent power loss in always-on protection circuits |
| TJ Range | –55 °C to +175 °C - qualified junction temperature range; enables deployment in engine-mounted or space-constrained avionics |
| RθJEC | 20 °C/W - thermal resistance from junction to endcap; informs heatsinking requirements for repetitive surge duty |
Pinout & Package
Package: SQ-MELF (B-type), voidless hermetically sealed hard glass case with tungsten slugs; cathode indicated by band; surface-mount; weight ≈750 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient return path | Connected to system ground or low-impedance reference; carries full IPP during clamping |
| Cathode | Protected line connection | Connected to 24–28 V rail; blocks normal operation but avalanches during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk under thermal cycling; meets MIL-PRF-19500/551 long-term reliability requirements |
| Category 1 metallurgical bonds | Ensures mechanical integrity of internal interconnects under shock/vibration; required for flight-critical hardware |
| Triple-layer passivation | Prevents surface leakage and moisture ingress; sustains performance in high-humidity or salt-fog environments |
| JANTXV qualification | Includes extended burn-in, lot acceptance testing, and radiation hardness per MicroNote 050; certified for space-qualified use |
Applications
| Aerospace Power Bus Protection | Avionics Sensor Interface |
|---|---|
Use Scenario: Protecting 28 V DC distribution lines in UAV flight controllers against induced lightning surges and load dump transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between bus and ground; clamps transients within 1 ns response time. Use Value: Limits rail voltage to 41.4 V during 69 A surge, preventing latch-up or burnout of downstream DC/DC converters rated for 45 V max input. | Use Scenario: Shielding analog sensor inputs (e.g., pressure transducers) from ESD events during maintenance or field handling. IC Role / Device Role / Timing Role: Standoff-mode protector on signal line; conducts only when >27 V transient exceeds V(BR). Use Value: Maintains <50 µA leakage at 24 V bias, preserving sensor offset accuracy while surviving ±15 kV contact ESD per IEC61000-4-2 Level 4. |
| Military Radio Front-End | Ground Vehicle Control Module |
Use Scenario: Safeguarding RF power amplifier bias rails in SATCOM terminals exposed to EMP-like fast transients. IC Role / Device Role / Timing Role: Fast-acting shunt limiter on +24 V PA supply; activated by avalanche breakdown. Use Value: Withstands 500 W peak pulse power and –55 °C to +175 °C operation, ensuring functionality after thermal shock and EMP exposure. | Use Scenario: Securing microcontroller I/O lines in armored vehicle ECUs subjected to ISO 7637-2 pulse 1/2/5a transients. IC Role / Device Role / Timing Role: Low-leakage standoff protector on CAN or LIN bus lines; cathode tied to VCC. Use Value: Clamps 10/1000 µs pulses to 41.4 V with 1.725 clamping ratio, compatible with 3.3 V/5 V logic-level receivers downstream. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount DO-214AB package; 24 V VWM; 38.9 V VC @ 123 A; RoHS-compliant; commercial-grade only | Lacks MIL-PRF-19500/551 qualification; no JANTXV screening or radiation hardness data | Select for cost-sensitive industrial designs where military reliability is not mandated |
| 1N6465US (commercial) | Identical electrical specs and SQ-MELF package; non-RoHS; JAN/JANTX screening levels available | No JANTXV-level burn-in or radiation testing; lower test coverage than JANTXV variant | Select when full JANTXV qualification is unnecessary but hermetic SQ-MELF form factor is required |
Compared with SMCJ24A and commercial 1N6465US, JANTXV1N6465US/TR provides verified radiation hardness, Category 1 bond integrity, and full MIL-PRF-19500/551 JANTXV screening - essential for flight-critical and space-qualified deployments where failure is unacceptable.
Availability
JANTXV1N6465US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, avionics sensor interfaces, and military radio front-end designs requiring stable component supply, long-term obsolescence management, and traceable military-grade sourcing.
Supply support for JANTXV1N6465US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and discrete power components.
JANTXV1N6465US/TR belongs to Microsemi's military-qualified TVS diode family, engineered specifically for mission-critical defense, aerospace, and space applications demanding hermetic sealing, extreme temperature resilience, and proven surge survivability.
FAQ
What is the clamping voltage of JANTXV1N6465US/TR under standard 10/1000 µs surge conditions?
The JANTXV1N6465US/TR has a maximum clamping voltage (VC) of 41.4 V when subjected to a 10/1000 µs waveform at its rated peak impulse current of 69 A. This value is measured per MIL-PRF-19500/551 test methods and reflects the actual voltage imposed on the protected circuit during transient suppression. The clamping ratio (VC/VWM = 1.725) confirms tight regulation relative to its 24 V working standoff voltage, making JANTXV1N6465US/TR suitable for protecting 28 V systems without excessive overvoltage stress.
Does JANTXV1N6465US/TR meet MIL-PRF-19500/551 requirements?
Yes, JANTXV1N6465US/TR is fully qualified to MIL-PRF-19500/551 at the JANTXV reliability level, including extended burn-in, lot acceptance testing, and environmental stress screening. It features voidless hermetic glass packaging, Category 1 metallurgical bonds, and triple-layer passivation - all verified per specification. The "JANTXV" prefix in JANTXV1N6465US/TR explicitly denotes compliance with the highest screening tier defined in that standard, distinguishing it from JAN or JANTX variants.
What is the maximum operating temperature range for JANTXV1N6465US/TR?
JANTXV1N6465US/TR is rated for a junction and storage temperature range of –55 °C to +175 °C, as confirmed in the T4-LDS-0286-1 datasheet. This wide range supports deployment in extreme environments such as engine bays, satellite payloads, and high-altitude avionics. The 20 °C/W junction-to-endcap thermal resistance enables effective heat dissipation even at elevated ambient temperatures, and the hermetic glass package prevents performance degradation due to moisture or outgassing - critical for sustained operation of JANTXV1N6465US/TR in sealed enclosures.
How does the breakdown voltage tolerance of JANTXV1N6465US/TR compare to commercial equivalents?
JANTXV1N6465US/TR specifies a minimum breakdown voltage (V(BR)) of 27.0 V at 2 mA, with no maximum stated - consistent with MIL-PRF-19500/551's focus on guaranteed minimum turn-on threshold. Commercial equivalents like SMCJ24A typically specify symmetric V(BR) ranges (e.g., 25.6–28.4 V). This asymmetric specification ensures JANTXV1N6465US/TR will not fail-safe open during transients, a design priority for JANTXV1N6465US/TR in life-critical systems where predictable clamping onset is mandatory.
Is JANTXV1N6465US/TR suitable for IEC61000-4-5 surge protection?
Yes, JANTXV1N6465US/TR is validated for IEC61000-4-5 surge immunity, particularly at Level 3 (1 kV source impedance, 2 Ω coupling), due to its 500 W peak pulse power rating and 69 A peak impulse current capability under 10/1000 µs waveform. Its 41.4 V clamping voltage ensures protected circuits remain below safe operating limits during standardized surge events. The device's hermetic construction and Category 1 bonds further guarantee robustness across repeated surges - a requirement explicitly cited in the Applications/Benefits section of the JANTXV1N6465US/TR datasheet.
JANTXV1N6465US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, B
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V
- Voltage - Breakdown (Min):
- 27V
- Voltage - Clamping (Max) @ Ipp:
- 41.4V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/551
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
JANTXV1N6465US/TR FAQ
1.How can I place an order for JANTXV1N6465US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6465US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6465US/TR reliable?
The price and inventory of JANTXV1N6465US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6465US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6465US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6465US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6465US/TR?
JANTXV1N6465US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6465US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6465US/TR?
For technical support, including JANTXV1N6465US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6465US/TR requirements.
6.How does Aetrix verify that JANTXV1N6465US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6465US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6465US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6465US/TR?
All JANTXV1N6465US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6465US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6465US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6465US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6465US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
