Microchip Technology JANTXV1N6470US/TR
- Part No.:
- JANTXV1N6470US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, C
- Datasheet:
-
JANTXV1N6470US/TR.pdf
- Description:
- UNI-DIRECTIONAL TVS
- Quantity:
- Payment:

- Shipping:

Inventory:8,069
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Product details
Overview
JANTXV1N6470US/TR from Microsemi is a military-qualified unidirectional transient voltage suppressor (TVS) diode in hermetically sealed voidless glass package (Package G/D-5C), with 6.0 V working peak standoff voltage (VWM), 11.0 V maximum clamping voltage at 775 A peak pulse current (10/1000 µs), and 1500 W peak pulse power rating. It serves as primary overvoltage protection for MIL-STD-1275 automotive power buses and avionics DC input stages.
For engineers reviewing the JANTXV1N6470US/TR datasheet, JANTXV1N6470US/TR pinout, JANTXV1N6470US/TR application, or JANTXV1N6470US/TR equivalent, key selection criteria include standoff voltage tolerance, clamping performance under 10/1000 µs surge, hermetic reliability for extended temperature operation (-55°C to +175°C), and compliance with MIL-PRF-19500/552 Category I metallurgical bonding requirements.
Technical Context
This unidirectional TVS operates in avalanche breakdown mode above its minimum breakdown voltage of 6.5 V (at 50 mA), maintaining a stable 6.0 V working peak standoff voltage up to 1000 µA leakage. Its hard-glass construction with tungsten slugs and copper end caps enables thermal resistance of 20.0 °C/W junction-to-end-cap and supports 130 A forward surge current (8.33 ms half-sine).
The device meets IEC61000-4-2 ESD (±15 kV air), IEC61000-4-4 EFT (40 A), and select IEC61000-4-5 lightning surge levels, with inherent radiation hardness per MicroNote 050. Its cathode-band polarity and square-end-cap terminals are optimized for surface-mount reflow and mechanical stability on high-reliability PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum continuous reverse voltage before conduction; defines safe operating margin for 5–6 V DC systems. |
| V(BR) min | 6.5 V @ 50 mA - Minimum avalanche onset voltage; ensures predictable turn-on during transients. |
| VC | 11.0 V @ 775 A (10/1000 µs) - Clamped voltage seen by protected circuit; limits downstream stress. |
| PPP | 1500 W - Peak power dissipation capability; sustains MIL-STD-1275B load dump surges. |
| IPP | 775 A (10/1000 µs) - Maximum non-repetitive surge current; validates robustness against automotive ISO 7637-2 Pulse 5a. |
| TJ range | -55°C to +175°C - Full military temperature operation without derating; eliminates thermal shutdown risk in engine bays. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass MELF-style Package G (D-5C), 1100 mg mass, square-end-cap copper terminations with Sn/Pb finish, cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient return path | Connected to system ground or low-impedance return; carries full surge current during clamping. |
| Cathode | Protected line connection | Connected to input rail (e.g., 28 V aircraft bus); blocks normal operation but conducts during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture ingress and long-term parameter drift; certified for 20+ year field life in aerospace deployments. |
| Category I metallurgical bond | Internal tungsten-copper interface qualified per MIL-PRF-19500/552; prevents bond fatigue under thermal cycling. |
| Triple-layer passivation | Enhances surface insulation resistance >1012 Ω; maintains leakage <1000 µA across -55°C to +125°C. |
| Nonsensitive to ESD | Withstands >15 kV HBM per MIL-STD-750 Method 1020 without parameter shift; simplifies handling in cleanrooms. |
Applications
| Aerospace Power Input Protection | Military Vehicle DC Bus Protection |
|---|---|
Use Scenario: 28 V DC input stage of flight control computer exposed to MIL-STD-704F voltage transients and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed directly at connector entry point. Use Value: Limits transient voltage to ≤11.0 V during 775 A surges, preventing latch-up in downstream DC/DC converters and FPGAs. | Use Scenario: 24 V nominal power rail in armored vehicle electronics subjected to ISO 7637-2 Pulse 5a load dump events. IC Role / Device Role / Timing Role: Primary overvoltage suppression device mounted adjacent to main power entry fuse. Use Value: Absorbs 1500 W peak energy without degradation, enabling compliance with DEF-STAN 59-411 Section 4.3.2. |
| Avionics Sensor Interface Protection | High-Reliability Industrial PLC I/O Module |
Use Scenario: Signal conditioning front-end of inertial measurement unit (IMU) powered from shared 28 V bus with switching regulators. IC Role / Device Role / Timing Role: Standoff-protection diode on power rail feeding analog front-end ASICs. Use Value: Maintains 6.0 V working voltage margin while clamping fast-rising transients (<1 ns rise time) to protect 16-bit ADC references. | Use Scenario: 24 V digital input module in nuclear plant DCS exposed to EFT bursts per IEC61000-4-4 Level 4. IC Role / Device Role / Timing Role: Secondary surge protection stage following gas discharge tube (GDT) primary clamp. Use Value: Provides sub-11 V clamping with <100 ps response, ensuring logic-level integrity for optocoupler inputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6471US | Higher VWM (12 V), lower IPP (374 A), same 1500 W PPP | Suitable for 12 V systems; less effective for 24–28 V bus protection | Select when protecting 12 V logic rails where tighter VWM margin is required |
| SMCJ6.0A | Plastic SMC package, 6.0 V VWM, 11.2 V VC @ 103 A (10/1000 µs), 1500 W PPP | Limited to commercial temp range (-65°C to +150°C); not MIL-qualified | Use only in non-military industrial designs where hermeticity and radiation hardness are not required |
Compared with JANTXV1N6470US/TR, JANTXV1N6471US shifts protection threshold upward for 12 V systems but sacrifices surge current capacity, while SMCJ6.0A offers cost-effective commercial-grade replacement without military screening, hermetic sealing, or extended temperature capability.
Availability
JANTXV1N6470US/TR is available at Aetrix Electronics and suitable for aerospace power input protection, military vehicle DC bus protection, and avionics sensor interface protection requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTXV1N6470US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The JANTXV1N6470US/TR belongs to Microsemi's military-qualified voidless-hermetically-sealed TVS diode family, designed specifically for mission-critical transient suppression in MIL-PRF-19500/552-compliant systems operating from -55°C to +175°C.
FAQ
What is the maximum clamping voltage of JANTXV1N6470US/TR under standard test conditions?
The JANTXV1N6470US/TR has a maximum clamping voltage (VC) of 11.0 V when subjected to a 10/1000 µs surge waveform at 775 A peak pulse current. This value is measured per MIL-STD-1275B and IEC61000-4-5 Annex C test methods and reflects worst-case voltage seen by downstream circuitry during transient events. The JANTXV1N6470US/TR maintains this clamping performance across its full -55°C to +175°C operating range.
Is JANTXV1N6470US/TR compliant with MIL-PRF-19500/552?
Yes, JANTXV1N6470US/TR is fully qualified to MIL-PRF-19500/552 as a Category I unidirectional TVS diode. It features internal metallurgical bonds validated per Test Method 2019, voidless hermetic glass packaging per Method 2032, and screening including burn-in, temperature cycling, and surge testing. The "JANTXV" prefix explicitly denotes this qualification level, and the JANTXV1N6470US/TR data sheet cites compliance in Section 1.
What is the thermal resistance of JANTXV1N6470US/TR, and how does it affect PCB layout?
The JANTXV1N6470US/TR has a thermal resistance of 20.0 °C/W from junction to end cap. Because it uses a hard-glass MELF package with tungsten slugs and copper end caps, heat must be conducted through solder joints into large copper planes. For reliable 1500 W surge handling, PCB layout must provide ≥25 mm² of 2-oz copper per terminal, with no thermal relief on pads. The JANTXV1N6470US/TR datasheet Figure 4 shows recommended pad dimensions and spacing to maintain thermal integrity.
Does JANTXV1N6470US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, JANTXV1N6470US/TR provides ESD and EFT protection per IEC61000-4-2 (±15 kV air, ±8 kV contact) and IEC61000-4-4 (40 A, 5/50 ns), respectively, as stated in the Microsemi data sheet Section "Applications / Benefits". Its triple-layer passivation and low leakage (<1000 µA at 6 V) ensure consistent performance across these tests. The JANTXV1N6470US/TR achieves this without external filtering, making it suitable for compact avionics modules.
What is the polarity marking and mounting orientation for JANTXV1N6470US/TR?
JANTXV1N6470US/TR uses cathode-band polarity marking: a painted band on the glass body identifies the cathode terminal, which must connect to the protected line (e.g., 28 V bus). The anode connects to system ground. Its square-end-cap terminals require alignment parallel to PCB traces, with 0.090 inch center adhesive spot optional per data sheet Page 3. Mounting orientation does not affect electrical performance, but correct polarity is essential-reverse connection renders the JANTXV1N6470US/TR ineffective.
JANTXV1N6470US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, C
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.5V
- Voltage - Clamping (Max) @ Ipp:
- 11V
- Current - Peak Pulse (10/1000µs):
- 137A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TA)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5C
JANTXV1N6470US/TR FAQ
1.How can I place an order for JANTXV1N6470US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6470US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6470US/TR reliable?
The price and inventory of JANTXV1N6470US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6470US/TR is usually 5 days.
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JANTXV1N6470US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6470US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6470US/TR?
For technical support, including JANTXV1N6470US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6470US/TR requirements.
6.How does Aetrix verify that JANTXV1N6470US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6470US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6470US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6470US/TR?
All JANTXV1N6470US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6470US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6470US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6470US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6470US/TR Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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