STMicroelectronics LFTVS18-1F3
- Part No.:
- LFTVS18-1F3
- Manufacturer:
- STMicroelectronics
- Category:
- TVS Diodes
- Package:
- 4-UFBGA, FCBGA
- Datasheet:
-
LFTVS18-1F3.pdf
- Description:
- TVS DIODE 12VWM 19VC 4FLIPCHIP
- Quantity:
- Payment:

- Shipping:

Inventory:9,687
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Product details
Overview
LFTVS18-1F3 from STMicroelectronics is a unidirectional low-forward-voltage Transil™ transient voltage suppressor diode designed for ESD and EOS protection of high-speed data lines in portable electronics. It features 16 V breakdown voltage (VBR), 19 V clamping voltage at 1 A (VCL), 175 pF junction capacitance at 0 V, 1.3 V forward voltage at 850 mA, and complies with IEC 61000-4-2 Level 4 (±15 kV air / ±8 kV contact discharge).
For engineers reviewing the LFTVS18-1F3 datasheet, LFTVS18-1F3 pinout, LFTVS18-1F3 application, or LFTVS18-1F3 equivalent, key selection criteria include clamping factor (VCL/VBR = 1.19), ultra-thin flip-chip package footprint (0.77 mm × 0.77 mm), low dynamic impedance, and line-capacitance-sensitive interface protection for USB 2.0, HDMI, and audio jack circuits.
Technical Context
The LFTVS18-1F3 employs a silicon avalanche diode structure optimized for fast response (<1 ns) and minimal parasitic capacitance. Its unidirectional configuration provides asymmetric clamping-low forward conduction (1.3 V @ 850 mA) for signal integrity during normal operation and robust reverse avalanche clamping (19 V @ 1 A) during transients.
Designed for flip-chip mounting with four solder bumps (A1, A2, B1, B2), it integrates directly onto PCB traces without wire bonds, minimizing inductance and preserving high-frequency ESD immunity. The 400 µm pitch and 185 µm bump height enable fine-pitch routing in space-constrained mobile designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR @ 1 mA | 16 V - Ensures reliable standoff above 12 V supply rails while triggering before IC damage thresholds. |
| VCL @ 1 A (8/20 µs) | 19 V - Limits transient voltage to safe levels for 1.8 V–3.3 V logic interfaces during ESD events. |
| CLINE @ 0 V, 1 MHz | 175 pF - Enables use on USB 2.0 (480 Mbps) and analog audio paths without signal distortion. |
| VF @ 850 mA | 1.3 V - Minimizes DC voltage drop and power loss in low-voltage signal lines. |
| PPP (8/20 µs) | 350 W - Sustains high-energy surges common in handheld device handling and docking scenarios. |
| IEC 61000-4-2 | ±8 kV contact / ±15 kV air - Meets industrial and consumer-grade ESD immunity requirements out-of-box. |
Pinout & Package
Package: Flip-chip (4-bump), 0.77 mm × 0.77 mm body, 400 µm pitch, RoHS-compliant ECOPACK® grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode 1 (bump) | Primary anode connection; marked with dot for orientation; connects to protected signal line. |
| A2 | Anode 2 (bump) | Secondary anode; electrically tied to A1 internally; enhances current sharing and thermal distribution. |
| B1 | Cathode 1 (bump) | Primary cathode; connects to ground plane; low-inductance path for transient current return. |
| B2 | Cathode 2 (bump) | Secondary cathode; internally connected to B1; improves solder joint reliability and current spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low clamping factor (VCL/VBR) | 1.19 - Reduces voltage overshoot during ESD, improving margin for 1.8 V I/O cells. |
| Ultra-thin flip-chip construction | 185 µm bump height - Eliminates bond wires, cutting parasitic inductance below 0.2 nH for sub-ns response. |
| Small PCB footprint | 0.59 mm² total area - Saves board space in smartphones, wearables, and TWS earbud PCBs. |
| Low leakage at 12 V | 250 nA max - Prevents signal degradation and battery drain in always-on sensor interfaces. |
Applications
| USB 2.0 Data Lines | HDMI Hot-Plug Detection |
|---|---|
Use Scenario: Protecting D+ and D− lines in smartphone OTG adapters against repeated plug/unplug ESD. IC Role / Device Role / Timing Role: Unidirectional TVS placed between connector and PHY IC to clamp ±8 kV contact discharges. Use Value: 175 pF capacitance avoids eye diagram degradation at 480 Mbps; 1.3 V VF prevents DC bias shift on differential pair. | Use Scenario: Shielding HPD (Hot-Plug Detect) pin in portable HDMI transmitters from user-handling surges. IC Role / Device Role / Timing Role: Standoff protection element referenced to 3.3 V rail, triggered only during >16 V transients. Use Value: 16 V VBR ensures no false HPD toggling during normal operation; 19 V VCL protects downstream level-shifter inputs. |
| Smartphone Audio Jacks | Wearable Sensor Interfaces |
Use Scenario: Guarding MIC and EAR lines in 3.5 mm TRRS jacks against pocket discharge events. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on analog audio paths, grounded via local decoupling. Use Value: Sub-200 pF capacitance preserves bandwidth up to 20 kHz; 1.3 V VF avoids DC offset in electret microphone bias networks. | Use Scenario: Securing I²C lines (SDA/SCL) connecting PMIC and health sensors in fitness trackers. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS leveraging low VF for both polarities in open-drain topology. Use Value: 250 nA leakage at 12 V prevents bus pull-up current errors; 350 W PPP handles ESD from wristband contact. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | DO-214AC package; 200 W PPP; 27.7 V VCL @ 1 A; 1000 pF CJ | Not suitable for high-speed data lines due to high capacitance and slow response. | Select when board space is unconstrained and only low-frequency I/O (e.g., GPIO, buttons) require protection. |
| ESD5Z7.0T1G | SOD-523; 12.5 V VBR; 15.6 V VCL @ 1 A; 120 pF CJ; 1.1 V VF | Lower VBR limits use to ≤5 V systems; lower PPP (200 W) reduces surge margin. | Prefer for 3.3 V/5 V microcontroller I/O where tighter clamping and lower capacitance are critical. |
Compared with SMAJ18A and ESD5Z7.0T1G, the LFTVS18-1F3 uniquely balances 16 V standoff, 19 V clamping, 175 pF capacitance, and flip-chip integration-making it optimal for miniaturized, high-speed interfaces where layout inductance and board area are limiting factors.
Availability
LFTVS18-1F3 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI hot-plug detection, and wearable sensor bus hardening requiring stable component supply across production lifecycles.
Supply support for LFTVS18-1F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, sensing, and control solutions for automotive, industrial, and consumer markets.
The Transil™ TVS portfolio targets system-level ESD/EOS protection with emphasis on low-clamp, low-capacitance, and ultra-compact packaging for portable and IoT edge devices.
FAQ
What is the recommended PCB layout for LFTVS18-1F3 to maintain ESD performance?
Place the device within 3 mm of the protected connector with symmetric, short (<2 mm), equal-length traces to A1/A2 and B1/B2. Use dedicated ground vias under B1/B2 bumps and avoid routing other signals beneath the device. Follow ST's AN2348 footprint recommendations: 220 µm solder mask opening and 300 µm × 300 µm stencil aperture for reliable reflow.
Does LFTVS18-1F3 support bidirectional transient suppression?
No-it is a unidirectional device optimized for clamping positive transients on signal-to-ground paths. For bidirectional protection (e.g., USB D+/D−), two devices must be used back-to-back, or a dedicated bidirectional TVS like SMF18A should be selected instead.
How does the 400 µm pitch affect assembly yield in high-volume manufacturing?
The 400 µm pitch is compatible with standard SMT placement equipment (±25 µm accuracy) and reflow profiles. ST's ECOPACK® qualification and tape-and-reel packaging (10,000 units per reel) ensure >99.95% first-pass yield when using recommended stencil design and nitrogen reflow. No special placement tooling is required.
Can LFTVS18-1F3 replace older Transil™ parts like SMBJ18A in legacy designs?
Only with layout revision: LFTVS18-1F3's flip-chip form factor and 0.77 mm footprint differ fundamentally from SMBJ18A's DO-214AA package. Electrical substitution is valid (same VBR, higher PPP, lower VCL), but mechanical redesign is mandatory due to incompatible mounting and thermal path.
LFTVS18-1F3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Package/Case:
- 4-UFBGA, FCBGA
- Series:
- LFTVS, TRANSIL™
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 16V
- Voltage - Clamping (Max) @ Ipp:
- 19V
- Current - Peak Pulse (10/1000µs):
- 5A
- Power - Peak Pulse:
- 350W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 175pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-FlipChip (0.77x0.77)
LFTVS18-1F3 FAQ
1.How can I place an order for LFTVS18-1F3 through Aetrix?
Please submit a Request for Quotation (RFQ) for LFTVS18-1F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LFTVS18-1F3 reliable?
The price and inventory of LFTVS18-1F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LFTVS18-1F3 is usually 5 days.
3.What payment methods are accepted for LFTVS18-1F3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LFTVS18-1F3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LFTVS18-1F3?
LFTVS18-1F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LFTVS18-1F3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LFTVS18-1F3?
For technical support, including LFTVS18-1F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LFTVS18-1F3 requirements.
6.How does Aetrix verify that LFTVS18-1F3 is sourced from the original manufacturer or authorized distributors?
All LFTVS18-1F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LFTVS18-1F3 meets industry standards.
7.What is the process for return or replacement of LFTVS18-1F3?
All LFTVS18-1F3 units undergo pre-shipment inspection (PSI). If there is an issue with LFTVS18-1F3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LFTVS18-1F3 part is unused and in its original packaging.
Return procedure for LFTVS18-1F3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
LFTVS18-1F3 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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