STMicroelectronics M24LR16E-RDW6T/2

Overview

M24LR16E-RDW6T/2 from STMicroelectronics is a dual-interface Dynamic NFC/RFID tag IC integrating 16-Kbit EEPROM, ISO 15693 RF interface, I²C bus (400 kHz), and energy harvesting capability. It operates from 1.8 V to 5.5 V, supports RF write-in-progress indication via RF WIP/BUSY pin, and delivers 64-bit UID, password-protected memory access in both RF and I²C modes. Used in smart packaging, asset tagging, and industrial maintenance logs where battery-free operation and wired/wireless data synchronization are required.

For engineers reviewing the M24LR16E-RDW6T/2 datasheet, M24LR16E-RDW6T/2 pinout, M24LR16E-RDW6T/2 application, or M24LR16E-RDW6T/2 equivalent, key selection criteria include ISO 15693 compliance, dual-interface memory coherency, energy harvesting sink current configuration, RF busy signaling, and sector-level password security in both RF and I²C domains.

Technical Context

The M24LR16E-RDW6T/2 implements a hybrid communication architecture: its I²C interface enables host MCU read/write at up to 400 kHz with byte/page programming (≤4 bytes), while its contactless interface complies fully with ISO 15693 and ISO 18000-3 Mode 1, supporting 13.56 MHz carrier with ASK modulation (10%/100%) and Manchester load modulation (423/484 kHz subcarriers).

Memory is partitioned into 2048 bytes for I²C access and 512 × 32-bit blocks for RF access, with independent write endurance (1M cycles @25°C, 150k @85°C) and >40-year data retention. Security includes single-password protection over I²C and multi-password block locking in RF mode, enforced via dedicated configuration registers and system memory areas.

Key Specifications

Pinout & Package

Package: UFDFPN8 (2 × 3 mm, ECOPACK2® RoHS/Halogen-free). Pin functions validated per STMicroelectronics DocID018932 Rev 14, Sections 2.1–2.7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-interface NFC/RFID tag applications.

Compared with M24LR16E-RDW6T/2, ST25DV16K-IER improves system responsiveness via hardware interrupt signaling and extends RF performance, while NT3H2111W0FHKH sacrifices memory size, energy harvesting, and ISO 15693 support for NFC smartphone compatibility - making M24LR16E-RDW6T/2 optimal for industrial dual-mode deployments.

Availability

M24LR16E-RDW6T/2 is available at Aetrix Electronics and suitable for smart industrial labels, medical device service logs, and asset tracking in harsh environments requiring stable component supply across extended temperature ranges and dual-interface reliability.

Supply support for M24LR16E-RDW6T/2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, sensors, power ICs, and secure connectivity solutions for industrial, automotive, and IoT markets.

The M24LR16E-RDW6T/2 belongs to the ST25 Dynamic NFC/RFID tag product line, engineered specifically for applications demanding seamless integration between wired microcontroller systems and contactless infrastructure - enabling battery-free, secure, and field-upgradable smart objects.

FAQ

What is the maximum I²C clock frequency supported by the M24LR16E-RDW6T/2?

The M24LR16E-RDW6T/2 supports I²C communication at up to 400 kHz, compliant with the Fast-mode I²C specification. This allows high-speed data exchange with host MCUs while maintaining robust noise immunity and built-in I²C timeout protection to prevent bus lock-up during signal anomalies.

How does the energy harvesting function operate, and what loads can it drive?

The Vout pin delivers harvested RF energy with four user-configurable sink current levels: 10 µA, 20 µA, 40 µA, or 80 µA. It is designed to power low-quiescent-current peripherals such as comparators, reset supervisors, or sensor bias circuits - not microcontrollers or radios - and requires proper impedance matching to the antenna's induced voltage.

Can the same memory location be written simultaneously via I²C and RF interfaces?

No. The M24LR16E-RDW6T/2 uses a hardware arbitration mechanism that prevents concurrent writes: an active RF write locks the memory array until completion, blocking I²C access, and vice versa. This ensures atomicity and eliminates data corruption risks in dual-interface operation.

What security mechanisms protect memory against unauthorized RF access?

RF access is secured via multiple layers: a 64-bit UID prevents cloning, sector-level password protection (up to 4 independent passwords) restricts block writes, and lock bits permanently disable further password changes after configuration. All security registers reside in protected system memory and require valid password presentation to modify.