STMicroelectronics ST25DV64K-IER6T3

Overview

ST25DV64K-IER6T3 from STMicroelectronics is a dynamic NFC/RFID tag IC with dual I²C and ISO/IEC 15693 contactless interfaces, 64 Kbit EEPROM, 256-byte fast-transfer buffer, and energy harvesting output (V_EH). It operates from 1.8–5.5 V, supports 1 MHz I²C, and delivers up to 53 Kbit/s RF read speed - deployed in smart industrial sensors for secure configuration updates via NFC-enabled handheld tools.

For engineers reviewing the ST25DV64K-IER6T3 datasheet, ST25DV64K-IER6T3 pinout, ST25DV64K-IER6T3 application, or ST25DV64K-IER6T3 equivalent, key selection criteria include RF/I²C coexistence timing, GPO interrupt configurability (field change, write completion, mailbox ready), password-protected memory segmentation, and LPD-controlled low-power mode availability in WLCSP10/UFDFPN12 packages.

Technical Context

The device implements a dual-domain architecture: I²C interface accesses EEPROM byte-wise (up to 8192 bytes), while RF interface accesses memory in 4-byte blocks (up to 2048 blocks), both referencing the same physical EEPROM array. The 256-byte volatile mailbox enables deterministic data handoff between wired and contactless domains without host polling.

Its analog front end integrates a 28.5 pF internal tuning capacitance, supports all ISO/IEC 15693 modulation/coding modes (1.66/26.48 kbit/s), and features configurable GPO output (open-drain in SO8/TSSOP8/UFDFPN8; CMOS in WLCSP10/UFDFPN12) with event masking for RF field detection, memory write completion, and Fast Transfer end.

Key Specifications

Pinout & Package

ST25DV64K-IER6T3 is supplied in UFDFPN8 (8-pin, 2 × 2 mm, 0.5 mm pitch) package with exposed pad (EP), RoHS-compliant ECOPACK2. This variant features open-drain GPO output and omits LPD/VDCG pins - optimized for cost-sensitive, space-constrained NFC tag integration where low-power-down mode is not required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dynamic NFC tag applications.

Compared with ST25DV16K-IER6T3, the ST25DV64K-IER6T3 provides 4× more EEPROM for complex firmware staging and extended logging; versus NXH3670UK/N1Z, it uniquely enables deterministic I²C-to-RF data handoff - critical for secure over-the-air updates in industrial controllers.

Availability

ST25DV64K-IER6T3 is available at Aetrix Electronics and suitable for industrial sensor configuration, smart asset tagging, energy-harvesting edge nodes, and secure firmware patching requiring stable component supply across long-lifecycle programs.

Supply support for ST25DV64K-IER6T3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and connectivity solutions for industrial, automotive, and consumer markets.

This device belongs to the ST25DVxxx dynamic NFC tag product line, engineered specifically for secure, dual-interface (I²C + RF) data exchange in industrial IoT endpoints where tamper resistance, long-term data integrity, and contactless commissioning are mandatory.

FAQ

What is the function of the V_EH pin, and what load can it drive?

The V_EH pin delivers unregulated analog voltage harvested from the RF field, usable to power external low-current circuits like comparators or wake-up timers. Its output impedance is high, and it enters high-Z state when RF field strength is insufficient. Datasheet DS10925 specifies typical V_EH ≥1.2 V at 5 cm distance from a 3.5 W/m² reader field - sufficient to bias rail-to-rail op-amps drawing <10 µA quiescent current.

How does the 256-byte mailbox enable fast transfer between I²C and RF domains?

The mailbox is a dedicated volatile RAM buffer accessible by both interfaces: I²C writes data to mailbox addresses 0x00–0xFF, then triggers Fast Transfer command; RF reads the same data in one atomic block operation. No EEPROM wear occurs during transfer, and latency is fixed at ~10 ms - enabling deterministic handoff of firmware chunks or sensor logs without host polling or EEPROM write delays.

Can the GPO pin be configured to signal only memory write completion, not RF field presence?

Yes. The GPO interrupt source is fully configurable via RF_MNGT register bits. Setting GPO_CFG[2:0] = 0b010 disables field-change detection and enables "Memory Write Completion" mode only. In this configuration, GPO asserts low (open-drain) for 100 µs after each successful RF write command - allowing host MCU to precisely synchronize post-write verification without false triggers from ambient RF noise.

What is the minimum antenna coil inductance required for reliable operation at 13.56 MHz?

Per DS10925 Section 9.1, the recommended antenna coil inductance is 1.0–1.5 µH with Q ≥30, tuned using the internal 28.5 pF capacitance. For 1.2 µH coils, series resonance occurs at 13.56 MHz when total parallel capacitance (including PCB stray) is ~13.5 pF - meaning external tuning capacitors are typically unnecessary unless coil tolerance exceeds ±10% or layout parasitics exceed 5 pF.