STMicroelectronics ST25DV04K-IER6S3

Overview

ST25DV04K-IER6S3 from STMicroelectronics is a dynamic NFC/RFID tag IC with 4-Kbit EEPROM, dual I²C and ISO/IEC 15693 contactless interfaces, 1.8–5.5 V supply, 256-byte fast-transfer buffer, and configurable GPO interrupt output. It operates as a secure, field-powered memory node in smart labels, asset tags, and industrial IoT sensors requiring simultaneous wired configuration and wireless data access.

For engineers reviewing the ST25DV04K-IER6S3 datasheet, ST25DV04K-IER6S3 pinout, ST25DV04K-IER6S3 application, or ST25DV04K-IER6S3 equivalent, key selection criteria include RF/I²C coexistence timing, 4-byte block vs. byte addressing alignment, GPO open-drain drive capability, energy harvesting analog output (V_EH) usability, and password-protected memory area partitioning for multi-tier access control.

Technical Context

The device implements a dual-domain architecture: an I²C slave interface (up to 1 MHz) for host-controlled configuration and byte-level EEPROM writes, and an ISO/IEC 15693-compliant RF front-end supporting 53 Kbit/s fast read, sub-carrier modulation, and full protocol stack handling-including anticollision via UID, AFI, and DSFID registers. Internal tuning capacitance is fixed at 28.5 pF.

Memory is partitioned into user EEPROM (512 bytes), dynamic registers, 256-byte volatile mailbox buffer, and protected system configuration space. Security is enforced via three 64-bit RF passwords (per user area), one 64-bit I²C password, and one 64-bit RF configuration password-enabling granular read/write protection across four configurable memory areas.

Key Specifications

Pinout & Package

ST25DV04K-IER6S3 is packaged in UFDFPN8 (8-pin, 2 × 2 mm, 0.5 mm pitch), RoHS-compliant ECOPACK2. Pinout matches Figure 2 of DS10925 Rev 11: open-drain GPO output, no LPD/VDCG pins (excludes low-power-down and CMOS-GPO variants).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dynamic NFC tag applications.

Compared with ST25DV16K-IER6S3, this part offers optimized cost and footprint for 4-Kbit use cases; versus NXH3670UK/N1Z, it provides essential I²C configurability and secure dual-interface data flow-critical for industrial traceability and authenticated peripherals.

Availability

ST25DV04K-IER6S3 is available at Aetrix Electronics and suitable for smart industrial labels, secure asset tracking tags, wireless sensor node configuration, and consumer electronics authentication requiring stable component supply, guaranteed long-term lifecycle support, and full NFC Forum Type 5 compliance.

Supply support for ST25DV04K-IER6S3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and connectivity solutions for automotive, industrial, and consumer markets.

This device belongs to the ST25 Dynamic NFC tag product line, engineered specifically for applications demanding simultaneous wired configuration and contactless data access-enabling secure, battery-free, and field-upgradable identification and sensing systems.

FAQ

What is the maximum RF data rate supported by ST25DV04K-IER6S3?

The device supports a custom fast read access mode up to 53 Kbit/s, exceeding standard ISO/IEC 15693 high-data-rate mode (26.48 Kbit/s). This is achieved through optimized command sequencing and internal buffer handling-not requiring external hardware changes. Full backward compatibility with legacy 1.66 Kbit/s and 26.48 Kbit/s readers is maintained via standard command sets.

How does the 256-byte fast transfer buffer function between I²C and RF domains?

The buffer operates as a volatile mailbox: I²C writes data to buffer addresses 0x00–0xFF; RF reads the same locations using Fast Read commands, and vice versa. No EEPROM wear occurs during transfers, and buffer contents persist only until next power cycle or RF field loss. It enables burst data exchange-e.g., uploading 256 sensor samples via I²C then reading them all in one RF transaction.

Can the GPO pin be used to wake up an external microcontroller?

Yes-the GPO pin can be configured to assert a low-level pulse on RF field detection, memory write completion, or fast-transfer end. When connected to an MCU's external interrupt pin with appropriate pull-up, it triggers wake-from-sleep without continuous polling. Pulse duration and event sources are programmable via RF Manage GPO command or I²C GPO_CTRL register-no additional components required.

Is energy harvesting output (V_EH) regulated, and what load can it drive?

V_EH is unregulated and directly proportional to RF field strength and coupling efficiency. Datasheet specifies typical output of ~1.2 V at 5 A/m field strength, with maximum recommended load current ≤10 µA to avoid droop or instability. It is intended for ultra-low-power analog functions-e.g., biasing a comparator threshold or enabling a low-leakage MOSFET switch-not for powering digital ICs or LEDs.