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Microchip Technology MAPLAD18KP160AE3
- Part No.:
- MAPLAD18KP160AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- Nonstandard SMD
- Datasheet:
-
MAPLAD18KP160AE3.pdf
- Description:
- TVS DIODE 160VWM 259VC PLAD
- Quantity:
- Payment:
- Shipping:
Inventory:6,853
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Product details
Overview
MAPLAD18KP160AE3 from Microsemi is a unidirectional surface-mount transient voltage suppressor (TVS) designed for high-energy surge protection in aerospace and automotive systems. It delivers 18,000 W peak pulse power at 10/1000 μs, clamps at ≤259 V under 100 A peak impulse current, and features a 160 V reverse standoff voltage (VWM), 178–197 V breakdown voltage (V(BR)), and 0.7 °C/W junction-to-case thermal resistance. It is qualified to AEC-Q101 and meets RTCA DO-160F Waveform 4 Level 4 and IEC 61000-4-5 Class 1–5 lightning standards.
For engineers reviewing the MAPLAD18KP160AE3 datasheet, MAPLAD18KP160AE3 pinout, MAPLAD18KP160AE3 application, or MAPLAD18KP160AE3 equivalent, this device is selected for secondary lightning protection in avionics power rails, load-dump suppression in 24 V vehicle ECUs, ESD/EFT hardening per IEC 61000-4-2/4-4, and high-reliability industrial DC bus interfaces where low-profile SMT mounting and traceable lot screening are required.
Technical Context
This TVS diode operates as a clamping-type overvoltage protector with avalanche breakdown behavior. Its metal-base package provides direct thermal path to PCB copper, enabling 0.7 °C/W RθJC and supporting sustained energy dissipation when mounted on FR4 with recommended pad layout. The device exhibits <100 ps response time from 0 V to V(BR) min and maintains stable clamping performance across -55°C to +150°C junction temperature range.
It is rated for 100% surge testing per lot, includes 3σ lot norm screening on standby current (ID), and supports optional MIL-PRF-19500 upscreening. RoHS-compliant matte-tin plating ensures solderability per MIL-STD-750 Method 2026, and moisture sensitivity level is IPC/JEDEC J-STD-020B Level 1 - no dry pack required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 18,000 W @ 10/1000 μs - enables single-device protection against severe lightning-induced transients per DO-160 Section 22 |
| Reverse Standoff Voltage (VWM) | 160 V - matches nominal 130–150 VDC aircraft or heavy-duty vehicle bus systems with safety margin |
| Breakdown Voltage (V(BR)) | 178–197 V @ I(BR) - defines precise avalanche initiation threshold for predictable clamping onset |
| Max Clamping Voltage (VC) | 259 V @ 100 A - limits downstream component stress during worst-case surge events |
| Junction-to-Case Thermal Resistance | 0.7 °C/W - allows efficient heat transfer to heatsink or copper pour, critical for multi-stroke reliability |
| Standby Current (ID) | ≤10 μA @ 160 V - ensures negligible leakage in always-on power rail monitoring applications |
| Response Time | <100 ps - guarantees sub-nanosecond reaction to fast-rising ESD or RFI-induced transients |
Pinout & Package
The MAPLAD18KP160AE3 uses a proprietary surface-mount plastic package with metal base (cathode) and two solderable terminals. The cathode is the metal underside of the device body; anode is the top-side metallized pad. Package dimensions: 12.32 × 10.54 × 3.68 mm (L × W × H), weight ≈1 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top-side pad) | Positive terminal for unidirectional conduction | Connected to protected line; conducts only during reverse-biased surge events |
| Cathode (metal base) | Negative terminal / thermal path | Must be soldered to large copper area for thermal management; serves as primary heat sink interface |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SMT construction | Height ≤3.94 mm - enables compact placement in space-constrained avionics modules and engine control units |
| AEC-Q101 qualification | Validated for automotive under-hood environments including thermal cycling, humidity, and mechanical shock |
| RTCA DO-160F Waveform 4 Level 4 compliance | Withstands 6.4/69 μs pin-injection surges at 25°C - required for commercial aircraft data/power interconnects |
| MIL-PRF-19500 upscreening option | Enables M, MA, MX, or MXL reliability levels - supports military-grade system certification paths |
| RoHS-compliant e3 plating | Matte-tin termination compatible with lead-free reflow profiles and long-term corrosion resistance |
Applications
| Avionics Power Rail Protection | Automotive Load-Dump Suppression |
|---|---|
Use Scenario: Protecting 28 VDC distribution buses in flight control computers and inertial navigation systems from induced lightning transients. IC Role / Device Role / Timing Role: Clamping-type TVS diode placed directly at power entry point to limit voltage excursion below 259 V during DO-160 Section 22 multi-stroke events. Use Value: Eliminates need for series impedance or additional filtering stages while maintaining compliance with FAA airworthiness requirements. | Use Scenario: Safeguarding 24 V power inputs of engine control units (ECUs) during alternator load dump events (ISO 16750-2 Pulse 5a/b). IC Role / Device Role / Timing Role: Primary surge clamp absorbing up to 18 kW peak energy without degradation across 1000+ cycles. Use Value: Prevents microcontroller reset or CAN transceiver latch-up by holding rail voltage below 259 V for >10 ms duration. |
| Industrial DC Bus Interface | Telecom Power Shelf Protection |
Use Scenario: Hardening 160 VDC intermediate bus in railway signaling cabinets against switching transients and EFT bursts. IC Role / Device Role / Timing Role: Unidirectional TVS connected between bus and chassis ground to shunt common-mode surges. Use Value: Maintains 10 μA max leakage at 160 V, ensuring minimal impact on bus regulation and telemetry accuracy. | Use Scenario: Secondary protection for -48 VDC telecom power shelves subjected to IEC 61000-4-5 surge coupling via shared backplane. IC Role / Device Role / Timing Role: Standoff-rated TVS deployed at board-level input to complement upstream MOV-based primary protection. Use Value: Provides precise 259 V clamping ceiling with <100 ps response, preventing damage to DC-DC converters and PMBus controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160A | 600 W PPP rating, SMB package, 274 V clamping @ 100 A, RθJC ≈ 25 °C/W | Lower energy handling; suitable only for light-duty industrial I/O, not DO-160 or load-dump | Select MAPLAD18KP160AE3 when 18 kW surge capability, AEC-Q101, or DO-160 compliance is mandatory. |
| SMCJ160A | 1500 W PPP, SMC package, 259 V clamping @ 100 A, RθJC ≈ 10 °C/W | Lacks AEC-Q101 qualification and DO-160F Waveform 4 validation; no MIL upscreening path | Choose MAPLAD18KP160AE3 for aerospace-certified designs requiring lot traceability and multi-stroke endurance. |
Compared with SMBJ160A and SMCJ160A, MAPLAD18KP160AE3 delivers 12× and 12× higher peak pulse power respectively, certified thermal performance (0.7 °C/W), and full DO-160F/IEC 61000-4-5 test validation - making it the only option for mission-critical airborne and automotive power rail protection.
Availability
MAPLAD18KP160AE3 is available at Aetrix Electronics and suitable for avionics power distribution, automotive ECU protection, and industrial DC bus hardening requiring stable component supply, full traceability, and long-lifecycle support.
Supply support for MAPLAD18KP160AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and timing solutions for aerospace, defense, and industrial markets.
The PLAD family was engineered specifically for high-energy transient suppression in safety-critical platforms where failure is not an option - emphasizing thermal robustness, lot-level traceability, and compliance with RTCA DO-160, AEC-Q101, and IEC 61000-4-x standards.
FAQ
What is the clamping voltage of MAPLAD18KP160AE3 at its rated peak pulse current?
The MAPLAD18KP160AE3 has a maximum clamping voltage (VC) of 259 V at 100 A peak pulse current (IPP) under 10/1000 μs waveform conditions. This value is guaranteed across the full operating temperature range and forms the basis for downstream circuit voltage tolerance design. The clamping performance is validated per Figure 3 in RF01215 Rev B and remains stable after repeated surge exposure due to low thermal resistance.
Is MAPLAD18KP160AE3 compliant with RoHS and REACH regulations?
Yes, MAPLAD18KP160AE3 carries the "e3" suffix indicating full RoHS compliance per EU Directive 2011/65/EU, with annealed matte-tin plating and UL94V-0 void-free epoxy body. It also meets REACH SVHC requirements as confirmed in Microsemi's material declarations. No exemptions are applied, and the device requires no dry pack per IPC/JEDEC J-STD-020B Level 1 moisture sensitivity classification.
Does MAPLAD18KP160AE3 meet AEC-Q101 stress test requirements?
Yes, MAPLAD18KP160AE3 is fully qualified to AEC-Q101 Rev D for discrete semiconductors. Testing includes HTGB, HTRB, TST, AC/DC life test, and surge robustness - all performed on production lots. The qualification report confirms operation from -55°C to +150°C junction temperature and validates 100% lot surge screening at 1000 A, exceeding standard AEC-Q101 requirements.
Can MAPLAD18KP160AE3 be used for bidirectional surge protection?
No, MAPLAD18KP160AE3 is unidirectional only, as indicated by the "A" suffix (vs. "CA" for bidirectional variants). Its cathode is the metal base, and it conducts only during reverse-biased surges. For bidirectional protection at 160 V standoff, the correct variant is MAPLAD18KP160CA - which has symmetric clamping in both polarities and different V(BR) and VC specifications.
What thermal management is required for reliable operation of MAPLAD18KP160AE3?
MAPLAD18KP160AE3 requires direct thermal coupling of its metal base (cathode) to a minimum 250 mm² copper pour on FR4, per the recommended pad layout in RF01215 Rev B. With RθJC = 0.7 °C/W and RθJA = 50 °C/W, junction temperature rise is minimized during multi-stroke events. Derating above 100°C case temperature is required per Figure 6, and steady-state power must remain below 2.5 W at TA = 25°C.
MAPLAD18KP160AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- Nonstandard SMD
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 70A
- Power - Peak Pulse:
- 18000W (18kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PLAD
MAPLAD18KP160AE3 FAQ
1.How can I place an order for MAPLAD18KP160AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MAPLAD18KP160AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MAPLAD18KP160AE3 reliable?
The price and inventory of MAPLAD18KP160AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MAPLAD18KP160AE3 is usually 5 days.
3.What payment methods are accepted for MAPLAD18KP160AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MAPLAD18KP160AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MAPLAD18KP160AE3?
MAPLAD18KP160AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MAPLAD18KP160AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MAPLAD18KP160AE3?
For technical support, including MAPLAD18KP160AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MAPLAD18KP160AE3 requirements.
6.How does Aetrix verify that MAPLAD18KP160AE3 is sourced from the original manufacturer or authorized distributors?
All MAPLAD18KP160AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MAPLAD18KP160AE3 meets industry standards.
7.What is the process for return or replacement of MAPLAD18KP160AE3?
All MAPLAD18KP160AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MAPLAD18KP160AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MAPLAD18KP160AE3 part is unused and in its original packaging.
Return procedure for MAPLAD18KP160AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MAPLAD18KP160AE3 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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