Microchip Technology MAPLAD36KP51AE3
- Part No.:
- MAPLAD36KP51AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- Nonstandard SMD
- Datasheet:
-
MAPLAD36KP51AE3.pdf
- Description:
- TVS DIODE 51VWM 82.4VC PLAD
- Quantity:
- Payment:

- Shipping:

Inventory:3,690
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Product details
Overview
MAPLAD36KP51AE3 from Microsemi is a unidirectional surface-mount transient voltage suppressor (TVS) designed for high-energy surge protection in aerospace and automotive systems. It delivers 36,000 W peak pulse power at 10/1000 μs, features a 51 V reverse standoff voltage (VWM), clamps to ≤82.4 V at 437 A peak current, and operates across –55°C to +150°C junction temperature - deployed in lightning protection circuits for avionics per RTCA DO-160 Section 22.
For engineers reviewing the MAPLAD36KP51AE3 datasheet, MAPLAD36KP51AE3 pinout, MAPLAD36KP51AE3 application, or MAPLAD36KP51AE3 equivalent, this device is evaluated for secondary lightning protection per IEC 61000-4-5 (42 Ω, 12 Ω, 2 Ω source impedances), pin injection immunity per RTCA/DO-160F Waveforms 4 and 5A, and ESD/EFT compliance per IEC 61000-4-2/4-4 - critical for high-reliability board-level surge hardening.
Technical Context
This TVS diode uses silicon avalanche technology with controlled breakdown characteristics to provide fast response (<5 ns clamping rise time) and low thermal resistance (RθJC = 1.0 °C/W). Its metal-base cathode construction enables efficient heat transfer to PCB copper pads or heatsinks, supporting multi-stroke surge endurance under 0.05% duty factor conditions.
It is rated for bidirectional variants (CA suffix) but MAPLAD36KP51AE3 is unidirectional; polarity is defined by cathode on the metal base underside. Standby leakage (ID ≤10 μA @ 51 V) and temperature coefficient of breakdown (αV(BR) = 58 mV/°C) are tightly controlled via wafer-level screening and 3σ lot norm testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 36,000 W @ 10/1000 μs - sustains aircraft lightning-induced transients without failure |
| Reverse Standoff Voltage (VWM) | 51 V - maximum continuous operating voltage before conduction begins |
| Clamping Voltage (VC) | ≤82.4 V @ IPP = 437 A - limits downstream circuit voltage during surge |
| Breakdown Voltage (V(BR)) | 56.7–62.7 V @ 5 mA - defines precise avalanche onset threshold |
| Junction-to-Case Thermal Resistance | 1.0 °C/W - enables direct thermal coupling to PCB ground plane or heatsink |
| Operating Temperature Range | –55°C to +150°C - qualified for extended-range avionics and engine bay environments |
| ESD & EFT Compliance | IEC 61000-4-2 (±30 kV contact), IEC 61000-4-4 (±4 kV) - meets industrial and aerospace immunity standards |
Pinout & Package
MAPLAD36KP51AE3 uses a surface-mount PLAD package with metal-base cathode configuration. The cathode is the exposed metal pad on the underside of the device body; the anode connects to the top-side metallized terminal. Package dimensions: 12.32 × 10.54 × 5.08 mm (L × W × H), with recommended FR4 pad layout per Microsemi RF01216 Rev B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top metallization) | Surge current entry point for unidirectional operation | Connected to protected line; conducts only when voltage exceeds V(BR) |
| Cathode (metal base) | Surge current return path and primary thermal interface | Must be soldered to large copper area or heatsink for RθJC = 1.0 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SMT PLAD package | Enables high-power surge protection without through-hole mounting or height constraints |
| Wafer fabrication lot traceability | Supports MIL-PRF-19500 upscreening and AEC-Q101 qualification for mission-critical use |
| Moisture Sensitivity Level 1 | Eliminates dry-pack requirement and bake-out prior to reflow (per IPC/JEDEC J-STD-020B) |
| RoHS-compliant e3 plating | Tin-lead-free matte-tin terminations ensure lead-free assembly compatibility and long-term solderability |
| RTCA DO-160F Waveform 4 & 5A compliance | Validated for pin-injection immunity in airborne equipment up to Level 5 (short-distance 51 V variant) |
Applications
| Avionics Lightning Protection | Automotive Load Dump Suppression |
|---|---|
Use Scenario: Protecting flight control sensor interfaces and communication buses from induced lightning transients in commercial aircraft. IC Role / Device Role / Timing Role: Primary clamping element in secondary lightning protection network per RTCA DO-160 Section 22. Use Value: Withstands multi-stroke 36 kW surges while maintaining <5 ns response and <82.4 V clamping - preserving signal integrity of ARINC 429 and CAN FD links. | Use Scenario: Safeguarding infotainment ECUs and ADAS domain controllers during 12 V battery load dump events. IC Role / Device Role / Timing Role: Unidirectional TVS placed at power input stage to clamp 120 V/400 ms transients. Use Value: 51 V VWM matches nominal 12 V system with margin; 36,000 W PPP handles worst-case ISO 7637-2 Pulse 5a without degradation. |
| Industrial Motor Drive I/O Protection | Railway Signaling Interface Protection |
Use Scenario: Shielding encoder feedback lines and analog inputs in variable-frequency drives exposed to switching noise and ground bounce. IC Role / Device Role / Timing Role: Board-level ESD/EFT suppressor on differential encoder channels per IEC 61000-4-2/4-4. Use Value: 10 μA ID @ 51 V ensures minimal signal loading; 58 mV/°C αV(BR) enables stable clamping across –40°C to +85°C ambient. | Use Scenario: Hardening Ethernet and RS-485 signaling ports in trackside signaling cabinets against induced surges from nearby lightning strikes. IC Role / Device Role / Timing Role: Secondary protector downstream of gas discharge tube (GDT) per IEC 61000-4-5 Class 4 (2 Ω source). Use Value: Clamps to ≤82.4 V within 5 ns, limiting stress on PHY ICs; RoHS e3 finish supports EN 50121-3-2 compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ51A | 600 W PPP rating, SMB package, RθJC ≈ 15 °C/W - lower power density and thermal capability | Limited to single-stroke or low-duty-cycle surges; not validated for RTCA DO-160F Waveform 5A Level 5 | Select when cost sensitivity outweighs multi-stroke reliability and aerospace qualification requirements |
| SMCJ51A | 1500 W PPP, SMC package, RθJC ≈ 3.5 °C/W - higher thermal mass than SMBJ but still 24× lower PPP than MAPLAD36KP51AE3 | Meets IEC 61000-4-5 Class 3 (42 Ω), but lacks DO-160F pin injection validation and AEC-Q101 screening | Choose for industrial-grade automotive modules where full aerospace compliance is not mandated |
Compared with SMBJ51A and SMCJ51A, MAPLAD36KP51AE3 provides 24× and 24× higher peak pulse power respectively, certified thermal path (RθJC = 1.0 °C/W), and explicit qualification for RTCA DO-160F Level 5 pin injection - making it uniquely suitable for certified avionics and high-reliability load dump systems.
Availability
MAPLAD36KP51AE3 is available at Aetrix Electronics and suitable for avionics lightning protection, automotive load dump suppression, and industrial motor drive I/O protection requiring stable component supply and long-term lifecycle support.
Supply support for MAPLAD36KP51AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-power, and precision timing solutions.
The PLAD-series TVS family - including MAPLAD36KP51AE3 - was engineered specifically for multi-stroke lightning protection in certified airborne equipment and harsh-environment automotive systems, meeting RTCA DO-160, IEC 61000-4-5, and AEC-Q101 requirements.
FAQ
What is the clamping voltage of MAPLAD36KP51AE3 at its rated peak pulse current?
The MAPLAD36KP51AE3 has a maximum clamping voltage (VC) of 82.4 V at its peak pulse current (IPP) of 437 A under 10/1000 μs waveform conditions. This value is measured per Figure 3 in the RF01216 Rev B datasheet and ensures downstream circuitry remains below safe voltage thresholds during high-energy transients. The MAPLAD36KP51AE3 maintains this clamping performance across its full operating temperature range.
Is MAPLAD36KP51AE3 qualified for aerospace applications per RTCA DO-160?
Yes, MAPLAD36KP51AE3 is explicitly validated for RTCA DO-160F Section 22 lightning-induced transient protection and pin injection immunity (Waveform 4 and 5A). It achieves Level 4 for Waveform 4 (6.4/69 μs) and Level 5 for short-distance Waveform 5A (40/120 μs) at 51 V standoff. The MAPLAD36KP51AE3 data sheet RF01216 Rev B confirms these ratings and references MicroNote 132 for temperature derating guidance.
What is the thermal resistance and recommended mounting method for MAPLAD36KP51AE3?
MAPLAD36KP51AE3 has a junction-to-case thermal resistance (RθJC) of 1.0 °C/W, achieved only when the metal cathode base is soldered directly to a thermally robust PCB copper area or external heatsink. The RF01216 Rev B datasheet specifies a minimum pad layout (11.94 mm × 5.85 mm) on FR4 to maintain this rating. Failure to follow the recommended pad design increases thermal impedance and risks thermal runaway during repeated surges. The MAPLAD36KP51AE3 must not be mounted with insulating thermal pads or non-conductive adhesives.
Does MAPLAD36KP51AE3 meet AEC-Q101 and RoHS requirements?
Yes, MAPLAD36KP51AE3 is tested in accordance with AEC-Q101 for discrete semiconductors and carries the e3 RoHS-compliant marking, indicating annealed matte-tin plating per J-STD-020B. The "E3" suffix in MAPLAD36KP51AE3 denotes RoHS compliance, and the device undergoes 3σ lot norm screening on standby current (ID). Microsemi's documentation confirms AEC-Q101 qualification and full traceability of wafer fabrication and assembly lots for MAPLAD36KP51AE3.
How does the polarity configuration affect PCB layout for MAPLAD36KP51AE3?
MAPLAD36KP51AE3 is unidirectional, with the cathode located on the metal base underside and the anode on the top metallized surface. PCB layout must orient the device so the cathode pad connects to system ground or low-impedance return path, while the anode connects to the line being protected. Reversing polarity renders the device non-functional for surge suppression. The polarity symbol appears only on unidirectional versions like MAPLAD36KP51AE3 - no marking exists on bidirectional CA variants.
MAPLAD36KP51AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- Nonstandard SMD
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 437A
- Power - Peak Pulse:
- 36000W (36kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PLAD
MAPLAD36KP51AE3 FAQ
1.How can I place an order for MAPLAD36KP51AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MAPLAD36KP51AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MAPLAD36KP51AE3 reliable?
The price and inventory of MAPLAD36KP51AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MAPLAD36KP51AE3 is usually 5 days.
3.What payment methods are accepted for MAPLAD36KP51AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MAPLAD36KP51AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MAPLAD36KP51AE3?
MAPLAD36KP51AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MAPLAD36KP51AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MAPLAD36KP51AE3?
For technical support, including MAPLAD36KP51AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MAPLAD36KP51AE3 requirements.
6.How does Aetrix verify that MAPLAD36KP51AE3 is sourced from the original manufacturer or authorized distributors?
All MAPLAD36KP51AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MAPLAD36KP51AE3 meets industry standards.
7.What is the process for return or replacement of MAPLAD36KP51AE3?
All MAPLAD36KP51AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MAPLAD36KP51AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MAPLAD36KP51AE3 part is unused and in its original packaging.
Return procedure for MAPLAD36KP51AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MAPLAD36KP51AE3 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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