My Inquiry
My Account
Microchip Technology MDA3KP12AE3
- Part No.:
- MDA3KP12AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- 16-SMD, Gull Wing
- Datasheet:
-
MDA3KP12AE3.pdf
- Description:
- UNI-DIRECTIONAL TVS_16L DIP
- Quantity:
- Payment:
- Shipping:
Inventory:9,615
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MDA3KP12AE3 from Microsemi is a unidirectional 3000 W surface-mount transient voltage suppressor (TVS) array with 12 V standoff voltage (VWM), 13.3–14.7 V breakdown voltage (V(BR)), and 19.9 V maximum clamping voltage (VC) at 150.6 A peak pulse current. It provides secondary lightning protection per IEC61000-4-5 (42 Ω, Class 1–4), ESD/EFT suppression per IEC61000-4-2/4-4, and inductive switching transient protection in power supply inputs and telecom interfaces.
For engineers reviewing the MDA3KP12AE3 datasheet, MDA3KP12AE3 pinout, MDA3KP12AE3 application, or MDA3KP12AE3 equivalent, key selection criteria include its 12 V working standoff, sub-100 ps response time, RoHS-compliant e3 marking, 150.6 A surge capability at 10/1000 µs, and MIL-PRF-19500 upscreening eligibility for high-reliability aerospace and defense systems.
Technical Context
This TVS array uses silicon avalanche diode technology to clamp transient overvoltages before they damage downstream circuitry. Its unidirectional polarity enables DC-biased protection paths, and its 10/1000 µs waveform-rated 3000 W peak pulse power supports robust surge immunity in industrial power rails and telecom line cards.
The device operates across –55 °C to +150 °C junction temperature, features <100 ps response time from 0 V to V(BR) min, and maintains ≤5 µA standby current at rated VWM - critical for low-leakage protection in always-on monitoring circuits and battery-backed systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - maximum continuous DC or peak AC voltage the device blocks without conduction |
| V(BR) min/max | 13.3–14.7 V @ 1 mA - ensures reliable avalanche initiation above normal operating voltage |
| VC @ IPP | 19.9 V @ 150.6 A - clamping voltage limits stress on protected ICs during 10/1000 µs surges |
| PPP | 3000 W @ 10/1000 µs - defines energy-handling capacity for lightning-induced transients |
| ID @ VWM | ≤5 µA - ultra-low leakage preserves signal integrity and battery life in standby circuits |
| TJ/TSTG | –55 to +150 °C - supports operation in harsh environments including automotive under-hood and industrial motor drives |
| Response time | <100 ps - enables effective suppression of ESD events before sensitive logic is damaged |
Pinout & Package
MDA3KP12AE3 is housed in a void-free transfer-molded thermosetting epoxy package (UL94V-0), weighing ~5 g, with tin-lead or matte-tin plating per MIL-STD-750 Method 2026. Pin 1 is marked by a dot on top; odd-numbered pins are cathodes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode of Channel 1 | Connected to protected line; conducts surge current to ground when voltage exceeds V(BR) |
| Pin 2 | Anode of Channel 1 | Connected to system ground; completes low-impedance path for transient energy dissipation |
| Pin 3 | Cathode of Channel 2 | Enables dual-line protection (e.g., differential pair or redundant power rail) |
| Pin 4 | Anode of Channel 2 | Shared or independent ground return depending on layout; supports multi-channel surge routing |
Key Features
| Feature | Design Value |
|---|---|
| 3000 W peak pulse power rating | Supports IEC61000-4-5 Class 4 secondary lightning protection with 42 Ω source impedance |
| RoHS-compliant e3 marking | Meets EU Directive 2011/65/EU; tin-lead or matte-tin termination compatible with lead-free reflow |
| MIL-PRF-19500 upscreening option | Enables high-reliability qualification for aerospace, defense, and space applications via wafer/lot traceability |
| Moisture sensitivity Level 1 | Eliminates dry-pack requirement per IPC/JEDEC J-STD-020B - reduces handling cost and assembly risk |
| Sub-100 ps response time | Clamps ESD transients faster than most interface ICs can respond, preventing latch-up or gate oxide damage |
Applications
| Industrial Power Input Protection | Telecom Line Card Surge Suppression |
|---|---|
Use Scenario: 24 V DC input stage of PLC I/O module exposed to inductive kickback and field wiring surges. IC Role / Device Role / Timing Role: Primary shunt protector placed upstream of DC-DC converter and isolation barrier. Use Value: Clamps 150.6 A transients to ≤19.9 V, preventing overvoltage damage to 24 V-rated regulators and digital isolators. | Use Scenario: T1/E1 interface board in central office equipment subjected to induced RF and lightning coupling. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS array protecting balanced receive/transmit lines against common-mode surges. Use Value: Delivers 3000 W surge handling at 12 V standoff while maintaining ≤5 µA leakage to preserve signal-to-noise ratio. |
| Automotive Body Control Module (BCM) | Medical Diagnostic Equipment Interface |
Use Scenario: 12 V battery-supplied BCM subsystem with CAN/LIN buses and sensor inputs vulnerable to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Front-end transient suppressor on main power rail and peripheral signal lines. Use Value: Withstands –55 °C to +150 °C operation and clamps 10/1000 µs transients to safe levels for automotive-grade microcontrollers. | Use Scenario: ECG/EEG front-end analog acquisition channel requiring low-noise, low-leakage overvoltage protection. IC Role / Device Role / Timing Role: High-impedance shunt protector on differential sensor inputs prior to instrumentation amplifier. Use Value: ≤5 µA ID at 12 V VWM avoids bias current errors; 19.9 V VC prevents saturation of precision op-amps during ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A | 600 W PPP rating, SMC package, 13.3 V V(BR) min, 19.9 V VC @ 30.1 A | Lower surge capacity; suitable for consumer-grade or lower-energy transients | Select SMBJ12A only where 3000 W rating is not required and PCB space is constrained. |
| SMCJ12A | 1500 W PPP rating, SMC package, 13.3 V V(BR) min, 19.9 V VC @ 75.3 A | Mid-tier energy handling; lacks MIL-PRF-19500 screening option | Choose SMCJ12A for industrial applications needing higher reliability than SMBJ but not full aerospace screening. |
Compared with MDA3KP12AE3, SMBJ12A offers smaller footprint but only 20% of the surge energy capacity, while SMCJ12A delivers half the PPP and no upscreening path - making MDA3KP12AE3 the sole choice for Class 4 lightning protection and mission-critical upscreening requirements.
Availability
MDA3KP12AE3 is available at Aetrix Electronics and suitable for industrial power input protection, telecom line card surge suppression, automotive body control modules, medical diagnostic equipment interfaces, and high-reliability aerospace subsystems requiring stable component supply and long-term lifecycle support.
Supply support for MDA3KP12AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, communications, and industrial markets.
The MDA3KP series was developed specifically for high-energy transient suppression in safety-critical and mission-essential systems where MIL-PRF-19500 compliance and 3000 W surge capability are mandatory design requirements.
FAQ
What is the clamping voltage of MDA3KP12AE3 at its rated peak pulse current?
The MDA3KP12AE3 has a maximum clamping voltage (VC) of 19.9 V at its rated peak pulse current (IPP) of 150.6 A under 10/1000 µs waveform conditions. This value is guaranteed across temperature and ensures protected downstream components experience no more than 19.9 V during worst-case surge events. The MDA3KP12AE3 achieves this performance using silicon avalanche diode architecture with tightly controlled V(BR) tolerance (13.3–14.7 V).
Is MDA3KP12AE3 RoHS compliant and what does the 'e3' suffix indicate?
Yes, MDA3KP12AE3 is RoHS compliant, and the 'e3' suffix explicitly denotes compliance with EU Directive 2011/65/EU. The 'e3' marking confirms that terminations use annealed matte-tin plating - compatible with both leaded and lead-free soldering processes - and that the device meets all restricted substance thresholds. This compliance is verified per Microsemi's internal qualification and documented in RF01243 Rev B.
Can MDA3KP12AE3 be used for bidirectional transient protection?
No, MDA3KP12AE3 is a unidirectional TVS array. Its part number lacks the 'C' suffix (e.g., MDA3KP12CE3), which designates bidirectional construction. Unidirectional operation means it conducts only for reverse-biased overvoltage events - ideal for DC-powered lines with defined polarity. For AC or differential signal lines requiring symmetrical clamping, a bidirectional variant must be selected.
What is the maximum operating temperature range for MDA3KP12AE3?
The MDA3KP12AE3 is rated for junction and storage temperatures from –55 °C to +150 °C. This extended range supports deployment in under-hood automotive electronics, industrial motor drives, and outdoor telecom infrastructure. Derating of peak pulse power begins above 25 °C per Figure 3 in RF01243 Rev B, with 50% power capability retained at +125 °C ambient.
Does MDA3KP12AE3 require moisture-sensitive handling per J-STD-020?
No, MDA3KP12AE3 has a moisture sensitivity level (MSL) of Level 1 per IPC/JEDEC J-STD-020B, meaning it may be stored indefinitely at ≤30 °C/85% RH without dry-pack or floor-life restrictions. This eliminates baking requirements and simplifies SMT assembly logistics - a key advantage for high-volume manufacturing and just-in-time supply chains.
MDA3KP12AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- 16-SMD, Gull Wing
- Series:
- MDA
- Packaging:
- Tube
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 8
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 150.6A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
MDA3KP12AE3 FAQ
1.How can I place an order for MDA3KP12AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MDA3KP12AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MDA3KP12AE3 reliable?
The price and inventory of MDA3KP12AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MDA3KP12AE3 is usually 5 days.
3.What payment methods are accepted for MDA3KP12AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MDA3KP12AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MDA3KP12AE3?
MDA3KP12AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MDA3KP12AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MDA3KP12AE3?
For technical support, including MDA3KP12AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MDA3KP12AE3 requirements.
6.How does Aetrix verify that MDA3KP12AE3 is sourced from the original manufacturer or authorized distributors?
All MDA3KP12AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MDA3KP12AE3 meets industry standards.
7.What is the process for return or replacement of MDA3KP12AE3?
All MDA3KP12AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MDA3KP12AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MDA3KP12AE3 part is unused and in its original packaging.
Return procedure for MDA3KP12AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MDA3KP12AE3 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
