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Nexperia USA Inc. MMBZ10VAL,215
- Part No.:
- MMBZ10VAL,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ10VAL,215.pdf
- Description:
- TVS DIODE 6.5VWM 14.2VC TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:172,011
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Product details
Overview
MMBZ10VAL from Nexperia is a low-capacitance unidirectional double ESD protection diode in common-anode SOT23 configuration, designed for transient overvoltage protection of two signal lines. It delivers 30 kV contact ESD immunity (IEC 61000-4-2 Level 4), clamps at ≤14.2 V under 1.7 A pulse, and exhibits ≤170 pF capacitance at 1 MHz - enabling high-speed data line protection in portable electronics.
For engineers reviewing the MMBZ10VAL datasheet, MMBZ10VAL pinout, MMBZ10VAL application, or MMBZ10VAL equivalent, this device is selected for dual-line ESD hardening where ultra-low leakage (≤20 nA), tight reverse standoff (6.5 V), and compact SOT23 footprint are critical in USB, audio, and cellular interface designs.
Technical Context
The MMBZ10VAL integrates two identical unidirectional TVS diodes sharing a common anode, allowing independent protection of two positive-polarity signal lines to ground. Its junction structure enables bidirectional protection of a single line when used with appropriate external biasing.
It operates within IEC 61643-321 (10/1000 µs waveform) and IEC 61000-4-2 standards, with clamping voltage specified at 14.2 V under 1.7 A peak pulse current and thermal resistance of 460 K/W (junction-to-ambient, free air).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 6.5 V - maximum continuous operating voltage before conduction begins on protected lines |
| Breakdown Voltage | 10 V (typ) - triggers clamping action at defined threshold to divert transients |
| Clamping Voltage | 14.2 V @ 1.7 A - limits voltage seen by downstream IC during surge events |
| Diode Capacitance | 130–170 pF @ 1 MHz - preserves signal integrity on high-speed interfaces like USB 2.0 |
| Peak Pulse Power | 24 W @ 10/1000 µs - sustains energy dissipation without failure during ESD strikes |
| ESD Rating | 30 kV contact discharge - exceeds IEC 61000-4-2 Level 4 for robust system-level immunity |
| Leakage Current | 20 nA @ 6.5 V - minimizes DC loading on sensitive analog or low-power signal paths |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body; optimized for automated placement and reflow soldering on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (cathode of diode 1) | Connects to first protected signal line; conducts transient current to common anode (pin 3) |
| 2 | K2 (cathode of diode 2) | Connects to second protected signal line; enables independent ESD path for dual-line protection |
| 3 | A (common anode) | Shared connection to ground or reference node; completes current path for both diodes during clamping |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Enables compact dual-line protection without discrete component duplication or routing complexity |
| Low 130–170 pF capacitance | Maintains signal rise/fall times on data lines up to 480 Mbps (e.g., USB Full-Speed) |
| 30 kV contact ESD rating | Meets stringent end-equipment compliance requirements without additional shielding or layout overhead |
| 20 nA max reverse leakage | Prevents battery drain and offset errors in always-on sensor or audio front-end circuits |
| 24 W peak pulse power | Handles multiple IEC 61000-4-2 discharges without parametric shift or degradation |
Applications
| USB 2.0 Data Lines | Smartphone Audio Jacks |
|---|---|
Use Scenario: Protecting D+ and D− lines against ESD during cable insertion or handling. IC Role / Device Role: Unidirectional clamping diode pair referenced to ground, placed within 5 mm of USB connector. Use Value: Prevents latch-up or damage to USB transceiver ICs while maintaining <150 pF total line capacitance for full-speed signaling. |
Use Scenario: Shielding left/right audio channels and microphone input from user-handling ESD in 3.5 mm TRRS jacks. IC Role / Device Role: Dual-cathode ESD suppressor tied to common ground, guarding analog signal paths before ADC input. Use Value: Eliminates pop/click artifacts and protects low-noise amplifiers without degrading SNR via added capacitance or leakage. |
| Portable HDMI Interfaces | Industrial Sensor Signal Conditioning |
Use Scenario: Safeguarding TMDS clock and data pairs in mini-HDMI connectors on tablets or docking stations. IC Role / Device Role: Common-anode dual TVS array suppressing fast-rising ESD pulses on differential pairs referenced to chassis ground. Use Value: Ensures signal fidelity up to 1.65 Gbps by limiting capacitance to ≤170 pF per line and clamping below 14.2 V. |
Use Scenario: Protecting 4–20 mA current-loop inputs and analog sensor outputs (e.g., temperature, pressure) in handheld test equipment. IC Role / Device Role: Low-leakage (≤20 nA) ESD clamp on each signal wire, referenced to isolated system ground. Use Value: Preserves measurement accuracy by avoiding DC error injection while surviving repeated 8 kV HBM and 30 kV contact discharges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NUP4105MR6T1G | Higher capacitance (220 pF typ), lower clamping voltage (12.5 V), same SOT23-3L package | Better for low-voltage logic (e.g., 3.3 V I/O) but less suitable for high-speed USB due to higher Cd | Select when clamping voltage margin is more critical than bandwidth preservation |
| Vishay ESDE0402MUT5G | Lower capacitance (100 pF typ), lower peak power (12 W), smaller 0402 DFN package | Optimized for space-constrained RF front-ends but lacks dual-line common-anode flexibility | Choose for ultra-dense layouts where board area is prioritized over dual-line integration |
Compared with NUP4105MR6T1G and ESDE0402MUT5G, the MMBZ10VAL uniquely balances dual-line integration, 170 pF capacitance, and 24 W pulse handling - making it optimal for cost-sensitive, high-volume portable designs requiring both compactness and robust transient suppression.
Availability
MMBZ10VAL is available at Aetrix Electronics and suitable for USB interface protection, smartphone audio subsystems, and industrial handheld sensor modules requiring stable component supply across production lifecycles.
Supply support for MMBZ10VAL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products including ESD protection, logic, discretes, and MOSFETs - serving automotive, industrial, and consumer markets.
The MMBZ10VAL belongs to Nexperia's low-capacitance ESD protection diode family, engineered specifically for high-speed data line hardening in portable and battery-powered electronics where size, leakage, and signal integrity are tightly constrained.
FAQ
What is the maximum recommended PCB trace length between MMBZ10VAL and the protected connector?
Per Nexperia application guidance, the trace length from MMBZ10VAL to the protected connector should be ≤5 mm. Longer traces increase inductance, degrading clamping response and allowing voltage overshoot beyond the 14.2 V specification during fast ESD events.
Can MMBZ10VAL protect bidirectional data lines like I²C without external components?
No - MMBZ10VAL is unidirectional and requires external pull-up resistors and proper grounding to function on bidirectional lines. For native bidirectional protection, a dedicated bidirectional array (e.g., PESD5V0S1BA) is required.
Does MMBZ10VAL meet automotive qualification standards?
No - the MMBZ10VAL is explicitly marked non-automotive qualified in its revision history. Automotive applications require the -Q qualified variant (e.g., MMBZ10VAL-Q), which undergoes AEC-Q200 stress testing and has different reliability documentation.
How does thermal resistance affect MMBZ10VAL's surge handling in real-world PCB layouts?
With Rth(j-a) = 460 K/W in free air, sustained surges cause rapid junction heating. Mounting on FR4 with 1 cm² cathode pad reduces Rth(j-sp) to 340 K/W, improving pulse repetition capability - critical for systems exposed to frequent ESD events.
MMBZ10VAL,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V (Max)
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.2V
- Current - Peak Pulse (10/1000µs):
- 1.7A
- Power - Peak Pulse:
- 24W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 130pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
MMBZ10VAL,215 FAQ
1.How can I place an order for MMBZ10VAL,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ10VAL,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ10VAL,215 reliable?
The price and inventory of MMBZ10VAL,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ10VAL,215 is usually 5 days.
3.What payment methods are accepted for MMBZ10VAL,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ10VAL,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ10VAL,215?
MMBZ10VAL,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ10VAL,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ10VAL,215?
For technical support, including MMBZ10VAL,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ10VAL,215 requirements.
6.How does Aetrix verify that MMBZ10VAL,215 is sourced from the original manufacturer or authorized distributors?
All MMBZ10VAL,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ10VAL,215 meets industry standards.
7.What is the process for return or replacement of MMBZ10VAL,215?
All MMBZ10VAL,215 units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ10VAL,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ10VAL,215 part is unused and in its original packaging.
Return procedure for MMBZ10VAL,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ10VAL,215 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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