onsemi MMBZ15VDLT3G
- Part No.:
- MMBZ15VDLT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ15VDLT3G.pdf
- Description:
- TVS DIODE 12.8VWM 21.2VC SOT23-3
- Quantity:
- Payment:

- Shipping:

Inventory:46,144
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MMBZ15VDLT3G from onsemi is a dual common-cathode 15 V Zener diode array in SOT-23 package, rated for 40 W peak pulse power (1 ms), 12.8 V working reverse voltage, and 21.2 V clamping voltage at 1.9 A peak pulse current. It delivers Class 3B ESD protection (>16 kV HBM) and IEC61000-4-2 Level 4 (±30 kV contact discharge), designed for bidirectional or dual unidirectional line protection in space-constrained interfaces.
For engineers reviewing the MMBZ15VDLT3G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, validated dual-anode/cathode terminal roles, real-world ESD/TVS use cases, and confirmed alternative parts with documented functional differences for signal-line transient suppression design.
Technical Context
This device integrates two monolithic silicon Zener junctions sharing a common cathode (Pin 3), enabling independent protection of two signal lines or formation of a bidirectional TVS pair. Its 15 V nominal breakdown voltage (14.3–15.8 V range at 1 mA) supports precise clamping in low-voltage digital and analog interfaces.
The SOT-23 package supports both unidirectional configurations (Pins 1–3 or 2–3) and bidirectional operation (Pins 1–2), with thermal resistance of 556 °C/W on FR-5 board and 417 °C/W on alumina substrate. Low leakage (<100 nA at 12.8 V) ensures minimal standby current draw in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 14.3–15.8 V @ 1 mA - defines precise clamping threshold for overvoltage events |
| Working Peak Reverse Voltage (VRWM) | 12.8 V - maximum continuous reverse voltage before significant leakage begins |
| Clamping Voltage (VC) | 21.2 V @ 1.9 A IPP - actual voltage seen by protected circuit during 40 W transient |
| Peak Pulse Power (Ppk) | 40 W @ 1.0 ms - sustains high-energy ESD/surge events without failure |
| ESD Rating (HBM) | Class 3B (>16 kV) - exceeds JEDEC JS-001 requirements for robust handling |
| IEC61000-4-2 Level | Level 4 (±30 kV contact) - certified for industrial and automotive interface immunity |
| Leakage Current (IR) | <100 nA @ 12.8 V - negligible loading on high-impedance signal paths |
Pinout & Package
SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm, void-free thermosetting plastic case with corrosion-resistant finish; Pb-free, UL 94 V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | First Zener anode - connects to Line 1 for unidirectional protection or forms bidirectional pair with Pin 2 |
| Pin 2 | Anode 2 | Second Zener anode - enables independent protection of Line 2 or completes bidirectional configuration with Pin 1 |
| Pin 3 | Cathode (Common) | Shared cathode node - ties both Zeners to reference (e.g., GND or VCC rail) for compact dual-line layout |
Key Features
| Feature | Design Value |
|---|---|
| Dual monolithic Zener junctions | Two matched 15 V Zeners in one SOT-23 - eliminates component count and layout mismatch vs discrete pairs |
| Configurable topology | Supports either two separate unidirectional clamps (1–3 and 2–3) or single bidirectional clamp (1–2) - maximizes design flexibility |
| High-energy surge capability | 40 W peak power at 1 ms - handles IEC61000-4-5 surges and system-level ESD events without degradation |
| Automotive-grade qualification | AEC-Q101 qualified (SZ-prefix variant) - validated for under-hood and infotainment interface reliability |
| Pb-free and RoHS compliant | Meets J-STD-609 Category 1 moisture sensitivity - compatible with standard reflow profiles and green manufacturing |
Applications
| USB 2.0 Data Lines | Automotive LIN Bus |
|---|---|
Use Scenario: Protecting D+ and D− pins of USB transceivers against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Dual-line transient voltage suppressor placed directly at connector entry point. Use Value: Clamps transients to ≤21.2 V while maintaining <100 nA leakage-preserving signal integrity and USB eye diagram compliance. |
Use Scenario: Safeguarding LIN transceiver inputs against load-dump-induced spikes and ESD in body control modules. IC Role / Device Role / Timing Role: Common-cathode Zener pair across LIN bus and ground, leveraging bidirectional mode for asymmetric fault tolerance. Use Value: Withstands ±30 kV contact discharge per IEC61000-4-2 Level 4-ensuring EMC compliance without external filtering components. |
| Industrial RS-485 Nodes | Medical Sensor Interfaces |
Use Scenario: Shielding half-duplex RS-485 transceiver A/B lines from induced surges in factory-floor cabling. IC Role / Device Role / Timing Role: Unidirectional clamp on each differential line (Pin 1–3 and Pin 2–3) referenced to local ground. Use Value: 40 W peak power rating absorbs 1 ms transients per IEC61000-4-5 - prevents latch-up or damage to isolated transceivers. |
Use Scenario: Protecting analog front-end inputs of patient-monitoring ECG/SpO₂ sensors from electrostatic discharge during clinical handling. IC Role / Device Role / Timing Role: Low-leakage (<100 nA) dual Zener guarding high-impedance sensor nodes against HBM >16 kV. Use Value: Maintains DC accuracy and noise floor integrity while meeting IEC60601-1-2 ESD immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-Zener TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ15VDLT1G | Same electrical specs and SOT-23 package, but supplied in 3,000-piece tape-and-reel vs 10,000-piece for MMBZ15VDLT3G | No functional difference; suited for prototyping or lower-volume production runs | Select when smaller reel size aligns with assembly line feeder constraints or NPI validation needs |
| SZMMBZ15VDLT3G | Identical Zener characteristics and pinout, but AEC-Q101 qualified and PPAP-capable for automotive use | Required for automotive OEM designs; not necessary for commercial/industrial applications | Choose SZMMBZ15VDLT3G only when automotive qualification documentation and traceability are mandated |
Compared with MMBZ15VDLT3G, MMBZ15VDLT1G offers identical protection performance in a smaller reel format, while SZMMBZ15VDLT3G adds automotive qualification overhead without altering electrical behavior-making the base MMBZ15VDLT3G optimal for cost-sensitive industrial and medical designs requiring high-volume supply stability.
Availability
MMBZ15VDLT3G is available at Aetrix Electronics and suitable for USB 2.0 data line protection, automotive LIN bus interfaces, and industrial RS-485 node designs requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for MMBZ15VDLT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBZxxVxL series was engineered specifically for compact, high-reliability transient voltage suppression in space-constrained signal interfaces-emphasizing low leakage, repeatable clamping, and multi-standard ESD compliance.
FAQ
What is the exact pin configuration of the MMBZ15VDLT3G?
The MMBZ15VDLT3G uses Style 9 pinout per onsemi's SOT-23 mechanical drawings: Pin 1 is Anode 1, Pin 2 is Anode 2, and Pin 3 is the common Cathode. This dual-anode/common-cathode arrangement enables either two independent unidirectional clamps or a single bidirectional TVS structure. The configuration is verified in the official datasheet Figure on page 1 and Package Dimensions document 98ASB42226B.
Does the MMBZ15VDLT3G support bidirectional transient suppression?
Yes, the MMBZ15VDLT3G supports bidirectional operation by connecting the protected line between Pins 1 and 2, with Pin 3 tied to reference. In this mode, it clamps positive and negative transients symmetrically around 0 V, achieving ±21.2 V clamping per IEC61000-4-2 testing. This is explicitly confirmed in the "Specification Features" section and Figure 5 waveform analysis of the datasheet.
What is the maximum clamping voltage of the MMBZ15VDLT3G under surge conditions?
The MMBZ15VDLT3G has a maximum clamping voltage (VC) of 21.2 V at 1.9 A peak pulse current (IPP), measured using the 1.0 ms exponential waveform defined in Figure 5 of the datasheet. This value is guaranteed across temperature and represents the worst-case voltage imposed on the protected circuit during a 40 W transient event.
Is the MMBZ15VDLT3G suitable for automotive applications?
The base MMBZ15VDLT3G is not AEC-Q101 qualified; however, its automotive-grade counterpart SZMMBZ15VDLT3G shares identical electrical specs and pinout but includes PPAP documentation and extended temperature validation. For non-OEM automotive subsystems where qualification is not mandated, MMBZ15VDLT3G remains technically viable-but formal automotive programs require the SZ prefix variant.
How does the MMBZ15VDLT3G compare to single-Zener TVS diodes in layout efficiency?
The MMBZ15VDLT3G replaces two discrete 15 V Zeners with one SOT-23 device, reducing PCB area by ~40% and eliminating matching errors between separate components. Its common-cathode architecture ensures identical thermal and electrical behavior across both channels-critical for differential signal protection where skew or imbalance could degrade immunity performance. This integration is confirmed in the "Dual Junction Common Cathode Design" feature description.
MMBZ15VDLT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12.8V
- Voltage - Breakdown (Min):
- 14.3V
- Voltage - Clamping (Max) @ Ipp:
- 21.2V
- Current - Peak Pulse (10/1000µs):
- 1.9A
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBZ15VDLT3G FAQ
1.How can I place an order for MMBZ15VDLT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ15VDLT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ15VDLT3G reliable?
The price and inventory of MMBZ15VDLT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ15VDLT3G is usually 5 days.
3.What payment methods are accepted for MMBZ15VDLT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ15VDLT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ15VDLT3G?
MMBZ15VDLT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ15VDLT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ15VDLT3G?
For technical support, including MMBZ15VDLT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ15VDLT3G requirements.
6.How does Aetrix verify that MMBZ15VDLT3G is sourced from the original manufacturer or authorized distributors?
All MMBZ15VDLT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ15VDLT3G meets industry standards.
7.What is the process for return or replacement of MMBZ15VDLT3G?
All MMBZ15VDLT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ15VDLT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ15VDLT3G part is unused and in its original packaging.
Return procedure for MMBZ15VDLT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ15VDLT3G Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

