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onsemi MMBZ20VALT3G
- Part No.:
- MMBZ20VALT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ20VALT3G.pdf
- Description:
- TVS DIODE 17VWM 28VC SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,845
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Product details
Overview
MMBZ20VALT3G from onsemi is a dual common-anode Zener diode array in SOT-23 package, designed for transient overvoltage and ESD protection of two independent signal lines. It features a nominal 20 V breakdown voltage (VBR = 19.0–21.0 V @ IT = 1.0 mA), 40 W peak pulse power (1.0 ms), clamping voltage of 28 V @ 1.4 A, and IEC 61000-4-2 Level 4 ±30 kV contact discharge rating. It is used in compact I/O interface protection for industrial controllers and embedded communication ports.
For engineers reviewing the MMBZ20VALT3G datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional/unidirectional configuration flexibility, low clamping voltage under surge, dual-line protection density, and automotive-grade AEC-Q101 qualification availability via SZ-prefix variants.
Technical Context
This device integrates two monolithic Zener junctions sharing a common anode (Pin 3), enabling either two independent unidirectional clamps (Pins 1–3 and 2–3) or a single bidirectional clamp (Pins 1–2). Its thermal resistance is 417 °C/W on alumina substrate, supporting high-energy transients without thermal runaway.
The 20 V nominal Zener voltage exhibits +1.4 mV/°C temperature coefficient, ensuring stable clamping across −55 °C to +150 °C operating range. Leakage current remains ≤50 nA at 17 V reverse bias, minimizing standby power impact in battery-sensitive interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 19.0–21.0 V @ IT = 1.0 mA - defines precise clamping threshold for overvoltage events |
| Clamping Voltage (VC) | 28 V @ IPP = 1.4 A - maximum voltage seen by protected circuit during 40 W surge |
| Peak Pulse Power | 40 W @ 1.0 ms - handles high-energy ESD and lightning-induced transients per Figure 6 waveform |
| ESD Rating (IEC 61000-4-2) | ±30 kV contact discharge - exceeds Level 4 immunity for robust system-level ESD compliance |
| Reverse Leakage (IR) | ≤50 nA @ VRWM = 17 V - ensures negligible loading on high-impedance signal lines |
| Package | SOT-23 (Case 318) - 2.9 × 1.3 × 1.0 mm footprint enables high-density PCB layout |
| Operating Temperature | −55 °C to +150 °C - supports deployment in automotive engine compartments and industrial enclosures |
Pinout & Package
SOT-23 package (Case 318, Style 12) with gull-wing leads, Pb-free and RoHS compliant. Designed for automated placement and reflow soldering at 260 °C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode 1 | First Zener junction cathode; connects to Line 1 for unidirectional clamping or forms one terminal of bidirectional pair |
| Pin 2 | Cathode 2 | Second Zener junction cathode; connects to Line 2 for independent clamping or completes bidirectional configuration with Pin 1 |
| Pin 3 | Anode (Common) | Shared anode node; ties both Zeners to GND or reference rail - enables dual-line protection in single footprint |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Protects two signal lines (e.g., RS-485 A/B or USB D+/D−) with zero additional board area vs. discrete diodes |
| 40 W peak pulse power | Withstands higher-energy surges than standard 24 W variants - critical for industrial fieldbus interfaces |
| IEC 61000-4-2 Level 4 compliance | ±30 kV contact discharge rating eliminates need for external ESD suppressors in certified end equipment |
| Low 28 V clamping at 1.4 A | Keeps protected ICs (e.g., UART transceivers) safely below absolute maximum ratings during fast transients |
| −55 °C to +150 °C operation | Validated performance across full automotive and extended industrial temperature ranges without derating |
Applications
| Industrial Serial Interface Protection | Automotive Body Control Module I/O |
|---|---|
|
Use Scenario: RS-485 differential bus lines exposed to cable discharge events in factory automation PLCs. IC Role / Device Role / Timing Role: Transient voltage suppressor placed directly at connector entry point, clamping induced surges before reaching transceiver IC. Use Value: Prevents latch-up or permanent damage to MAX1487-level transceivers by limiting line voltage to ≤28 V during 1.4 A surges. |
Use Scenario: LIN bus slave node inputs in door module ECUs subject to ISO 10605 discharge pulses. IC Role / Device Role / Timing Role: Dual-line ESD clamp on LIN data and wake-up lines, sharing common ground return path. Use Value: Achieves system-level ISO 10605 compliance with single device, reducing BOM count and routing complexity. |
| USB 2.0 Data Line Protection | Embedded Controller GPIO Protection |
|
Use Scenario: Consumer electronics docking station protecting upstream USB host port from hot-plug transients. IC Role / Device Role / Timing Role: Unidirectional clamp on D+ and D− lines referenced to VDD, leveraging common-anode configuration for shared rail connection. Use Value: Maintains USB signal integrity (capacitance < 100 pF @ 0 V) while suppressing >15 kV HBM ESD events per IEC 61000-4-2. |
Use Scenario: Industrial HMI panel with microcontroller GPIOs connected to pushbuttons and sensors in noisy environments. IC Role / Device Role / Timing Role: Bidirectional clamp between GPIO and GND, using Pins 1–2 to protect against reverse polarity and ESD on input pins. Use Value: Enables direct connection of mechanical switches without series resistors or RC filters, simplifying front-panel design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Zener transient protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBZ20VALT1G | Same electrical specs but supplied in 3,000-unit tape-and-reel (vs. 10,000-unit MMBZ20VALT3G) | Preferred for prototyping and low-volume production where smaller reels reduce inventory overhead | Select when order quantity aligns with 3k reel size and no volume discount applies |
| SZMMBZ20VALT3G | AEC-Q101 qualified, PPAP-capable, with automotive-specific process controls and traceability | Required for safety-critical automotive modules (e.g., ADAS sensor interfaces) needing certified components | Choose for automotive OEM programs where qualification documentation and lot traceability are mandatory |
Compared with MMBZ20VALT3G, MMBZ20VALT1G offers identical protection performance in a smaller reel format ideal for development, while SZMMBZ20VALT3G adds automotive qualification for mission-critical vehicle systems - neither is pin-compatible with non-common-anode alternatives like PESD5V0S1BA.
Availability
MMBZ20VALT3G is available at Aetrix Electronics and suitable for industrial serial interface protection, automotive body control module I/O, and USB 2.0 data line protection requiring stable component supply and long-term manufacturability.
Supply support for MMBZ20VALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBZxxxALT1G series targets compact, high-reliability transient suppression in space-constrained electronics - engineered specifically for dual-line ESD and surge protection without sacrificing performance or qualification rigor.
FAQ
What is the maximum clamping voltage of the MMBZ20VALT3G during a 40 W surge event?
The MMBZ20VALT3G clamps to a maximum of 28 V at a peak pulse current of 1.4 A, as specified in the Electrical Characteristics table for 40 W devices. This value is measured under the standardized 1.0 ms rectangular waveform (Figure 6), ensuring predictable voltage limiting during real-world transients. The MMBZ20VALT3G maintains this clamping performance across its full operating temperature range.
Can the MMBZ20VALT3G be used in bidirectional ESD protection mode?
Yes, the MMBZ20VALT3G supports bidirectional operation by connecting the protected signal lines to Pins 1 and 2, with the common anode (Pin 3) tied to ground. This configuration leverages both Zener junctions back-to-back to clamp positive and negative transients symmetrically. The MMBZ20VALT3G achieves ±30 kV IEC 61000-4-2 contact discharge immunity in this mode, making it suitable for data lines like RS-485 or CAN.
What is the leakage current specification for the MMBZ20VALT3G at its working voltage?
The MMBZ20VALT3G specifies a maximum reverse leakage current of 50 nA at a working peak reverse voltage (VRWM) of 17 V, measured at 25 °C. This ultra-low leakage minimizes DC loading on high-impedance nodes such as microcontroller GPIOs or analog sensor inputs. The MMBZ20VALT3G maintains sub-100 nA leakage up to 85 °C, as shown in Figure 2 of the datasheet.
How does the thermal performance of the MMBZ20VALT3G compare between FR-5 and alumina substrates?
On FR-5 board, the MMBZ20VALT3G has a thermal resistance of 556 °C/W and a steady-state power dissipation limit of 225 mW at 25 °C ambient; on alumina substrate, RJA improves to 417 °C/W with 300 mW dissipation capability. This 25% lower thermal resistance on alumina allows the MMBZ20VALT3G to sustain higher average power in thermally demanding applications like motor drive feedback circuits.
Is the MMBZ20VALT3G suitable for automotive applications requiring AEC-Q101 qualification?
The base MMBZ20VALT3G is not AEC-Q101 qualified; however, its automotive-grade variant SZMMBZ20VALT3G meets AEC-Q101 requirements and supports PPAP documentation. The SZMMBZ20VALT3G shares identical electrical and mechanical specifications with the MMBZ20VALT3G but includes enhanced process controls, lot traceability, and automotive-specific reliability testing. For automotive designs, specify SZMMBZ20VALT3G instead of MMBZ20VALT3G.
MMBZ20VALT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 28V
- Current - Peak Pulse (10/1000µs):
- 1.4A
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBZ20VALT3G FAQ
1.How can I place an order for MMBZ20VALT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ20VALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ20VALT3G reliable?
The price and inventory of MMBZ20VALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ20VALT3G is usually 5 days.
3.What payment methods are accepted for MMBZ20VALT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ20VALT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ20VALT3G?
MMBZ20VALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ20VALT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ20VALT3G?
For technical support, including MMBZ20VALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ20VALT3G requirements.
6.How does Aetrix verify that MMBZ20VALT3G is sourced from the original manufacturer or authorized distributors?
All MMBZ20VALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ20VALT3G meets industry standards.
7.What is the process for return or replacement of MMBZ20VALT3G?
All MMBZ20VALT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ20VALT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ20VALT3G part is unused and in its original packaging.
Return procedure for MMBZ20VALT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ20VALT3G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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