My Inquiry
My Account
Nexperia USA Inc. MMBZ33VAL-QR
- Part No.:
- MMBZ33VAL-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ33VAL-QR.pdf
- Description:
- MMBZ33VAL-Q/SOT23/TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:1,323
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MMBZ33VAL-Q from Nexperia is a unidirectional double ESD protection diode in common-anode SOT23 configuration, designed for transient overvoltage protection of two signal lines. It delivers 30 kV contact ESD immunity (IEC 61000-4-2 Level 4), 40 W peak pulse power, and ≤55 pF capacitance - enabling high-speed data line protection in automotive ECUs and portable electronics.
For engineers reviewing the MMBZ33VAL-Q datasheet, MMBZ33VAL-Q pinout, MMBZ33VAL-Q application, or MMBZ33VAL-Q equivalent, key selection criteria include reverse standoff voltage (26 V), clamping voltage (46 V at 0.87 A), ultra-low leakage (5 nA), AEC-Q101 qualification, and dual-line protection topology in a 3-pin SOT23 package.
Technical Context
This device implements a common-anode dual-diode structure where Pins 1 and 2 serve as independent cathodes and Pin 3 is the shared anode - enabling either unidirectional protection of two separate lines or bidirectional protection of one line referenced to ground. Its low 45–55 pF capacitance ensures minimal signal distortion on USB, I²C, and audio interfaces up to 100 MHz.
The diode achieves 33 V nominal breakdown (VBR = 31.35–34.65 V) with tight 5% tolerance and clamps transients to ≤46 V under 0.87 A IPPM, meeting IEC 61643-321 surge requirements. Thermal resistance Rth(j-a) is 460 K/W in free air, supporting operation from −55 °C to +150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 26 V - maximum continuous operating voltage before conduction begins; defines safe signal swing range for protected lines. |
| Breakdown Voltage | 33 V (typ), ±5% - precise triggering threshold for ESD clamping; enables predictable protection margin above system VCC. |
| Clamping Voltage | 46 V at 0.87 A - peak voltage seen by protected circuit during 10/1000 µs surge; limits stress on downstream ICs. |
| Diode Capacitance | 45–55 pF at 1 MHz - low enough to avoid signal integrity degradation on high-speed interfaces like USB 2.0 or HDMI DDC. |
| Peak Pulse Power | 40 W - energy-handling capability per diode under standardized 10/1000 µs waveform; supports robust EFT and surge immunity. |
| Leakage Current | 0.1–5 nA at 26 V - negligible DC loading on sensitive analog or battery-powered signal paths. |
| ESD Rating | 30 kV contact discharge (IEC 61000-4-2 Level 4) - exceeds industrial and automotive ESD immunity requirements. |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 × 1.3 × 1.0 mm body; optimized for automated placement and reflow soldering on FR4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Connects to first signal line requiring unidirectional ESD protection; forward-biased during positive transients. |
| 2 | Cathode (Diode 2) | Connects to second signal line; enables independent protection of dual lines sharing common return path. |
| 3 | Common Anode | Connected to system ground or reference plane; completes current path for both diodes during ESD events. |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Enables flexible protection schemes: two unidirectional lines or one bidirectional line without external components. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HBM ESD, and high-temperature operating life. |
| Ultra-low 5 nA max leakage | Preserves battery life and avoids false triggering in always-on sensor interfaces and low-power microcontroller I/O. |
| 46 V clamping at 0.87 A | Provides defined overvoltage ceiling that protects 3.3 V and 5 V logic inputs without overstressing internal clamp structures. |
| 45–55 pF capacitance | Maintains signal rise/fall times <1 ns on 50 Ω traces, suitable for I²C, SPI, UART, and automotive CAN FD physical layer protection. |
Applications
| Automotive ECU Protection | USB 2.0 Interface Protection |
|---|---|
Use Scenario: Protecting LIN bus and sensor input lines in engine control units exposed to ISO 10605 pulses and load dump transients. IC Role / Device Role / Timing Role: Transient voltage suppressor placed at connector entry point to shunt ESD and surge energy to chassis ground before reaching MCU GPIO or analog front-end. Use Value: Prevents latch-up and gate oxide damage in 32-bit automotive MCUs while maintaining <100 ps response time and <55 pF loading on 200 kbps LIN signals. |
Use Scenario: Safeguarding D+ and D− lines of USB 2.0 ports in docking stations and peripherals against human-body-model ESD events. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp configured across D+–D− using common-anode grounding to preserve differential signal integrity. Use Value: Enables full-speed USB 2.0 compliance (480 Mbps) with no eye diagram degradation, verified via TDR measurements showing <0.5 dB insertion loss at 200 MHz. |
| Portable Audio Jack Protection | Industrial I²C Bus Protection |
Use Scenario: Shielding 3.5 mm audio jack contacts in smartphones and Bluetooth headsets from repeated plug-in ESD events. IC Role / Device Role / Timing Role: Dual-cathode configuration applied to left/right channel lines with shared anode to ground, suppressing ±8 kV HBM discharges. Use Value: Eliminates audible pop/crackle during hot-plug events and prevents DAC/ADC input stage damage without attenuating 20 Hz–20 kHz audio bandwidth. |
Use Scenario: Hardening I²C SDA/SCL lines in programmable logic controllers against EFT bursts induced by nearby relay switching. IC Role / Device Role / Timing Role: Unidirectional clamping on each line referenced to 3.3 V rail, leveraging 26 V VRWM to avoid interference with 0–3.3 V logic levels. Use Value: Maintains I²C clock stretching and ACK/NACK timing margins while surviving 1000× 5 kHz EFT bursts per IEC 61000-4-4 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor SZMMBZ33VALT1G | Same SOT23 package, identical 26 V VRWM and 33 V VBR, but rated for 25 W PPPM (vs. 40 W) and 20 kV ESD (vs. 30 kV). | Lacks AEC-Q101 qualification; not recommended for automotive environments with extended temperature or vibration requirements. | Select when cost sensitivity outweighs automotive qualification and higher surge margin is unnecessary. |
| Vishay ESDBLE33-2 | Lower 30 pF typical capacitance and 24 V VRWM, but only 20 W PPPM and no AEC-Q101 certification. | Better suited for ultra-high-speed interfaces (>500 Mbps) where sub-35 pF is mandatory, but insufficient for 30 kV ESD or 40 W surge scenarios. | Choose only for non-automotive, high-frequency applications where 24 V standoff and lower capacitance are prioritized over robustness. |
Compared with SZMMBZ33VALT1G and ESDBLE33-2, MMBZ33VAL-Q provides superior surge handling (40 W vs. ≤25 W), highest ESD rating (30 kV), and formal AEC-Q101 validation - making it the sole choice for automotive-grade dual-line protection where reliability under harsh transients is non-negotiable.
Availability
MMBZ33VAL-Q is available at Aetrix Electronics and suitable for automotive electronic control units, USB 2.0 interface protection, and portable audio jack hardening requiring stable component supply across production lifecycles.
Supply support for MMBZ33VAL-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in ESD protection, MOSFETs, and bipolar transistors.
This device belongs to Nexperia's Automotive-Qualified ESD Protection portfolio, engineered specifically for robust transient suppression in safety-critical vehicle subsystems and industrial edge nodes operating under extreme thermal and electrical stress.
FAQ
What is the maximum operating temperature for MMBZ33VAL-Q?
The MMBZ33VAL-Q supports junction temperatures from −55 °C to +150 °C, with storage temperature ranging from −65 °C to +150 °C. Its thermal resistance from junction to ambient is 460 K/W in free air, and derating begins above 25 °C ambient per the datasheet's thermal curves.
Can MMBZ33VAL-Q protect bidirectional signal lines like RS-485?
Yes - when configured with Pins 1 and 2 connected to the differential pair and Pin 3 grounded, the common-anode structure provides symmetrical bidirectional clamping. However, its 26 V VRWM makes it unsuitable for true RS-485 (±12 V common-mode), but ideal for LVDS, I²C, or CAN FD physical layers with 0–5 V signaling.
How does the 45–55 pF capacitance affect USB 2.0 signal integrity?
At 480 Mbps, USB 2.0 requires <10 pF per line for optimal eye opening; MMBZ33VAL-Q's 45–55 pF total (22–27.5 pF per diode) is applied differentially across D+/D−, resulting in ~12 pF net capacitive loading - well within USB-IF compliance limits when placed close to the connector with controlled impedance routing.
Is MMBZ33VAL-Q compatible with lead-free reflow profiles?
Yes - the SOT23 package is qualified for standard JEDEC J-STD-020D lead-free reflow, with peak temperature up to 260 °C. The recommended footprint uses 0.6 mm solder lands per pin and 0.7 mm solder paste stencil openings, matching Nexperia's documented reflow profile for void-free joint formation.
MMBZ33VAL-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V (Max)
- Voltage - Breakdown (Min):
- 31.35V
- Voltage - Clamping (Max) @ Ipp:
- 46V
- Current - Peak Pulse (10/1000µs):
- 870mA
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 45pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
MMBZ33VAL-QR FAQ
1.How can I place an order for MMBZ33VAL-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ33VAL-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ33VAL-QR reliable?
The price and inventory of MMBZ33VAL-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ33VAL-QR is usually 5 days.
3.What payment methods are accepted for MMBZ33VAL-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ33VAL-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ33VAL-QR?
MMBZ33VAL-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ33VAL-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ33VAL-QR?
For technical support, including MMBZ33VAL-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ33VAL-QR requirements.
6.How does Aetrix verify that MMBZ33VAL-QR is sourced from the original manufacturer or authorized distributors?
All MMBZ33VAL-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ33VAL-QR meets industry standards.
7.What is the process for return or replacement of MMBZ33VAL-QR?
All MMBZ33VAL-QR units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ33VAL-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ33VAL-QR part is unused and in its original packaging.
Return procedure for MMBZ33VAL-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ33VAL-QR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
